Vatsalkumar Patel | Searcharxiv

arXiv2026

Spontaneous Nanopatterning and Strain Relaxation in SiGe Layers Grown by Oxidative Solid Phase Epitaxy

The wafer-scale monolithic integration of III-V materials on Si would lead to revolutionary optoelectronic hardware for data, computing and other applications. However, heteroepitaxy of III-Vs on Si requires overcoming the large lattice and thermal mismatches between the materials and reducing threading dislocations densities. In this work, we explore the oxidative solid phase epitaxy (SPE) of Ge+ implanted Si(111) to form ultra-thin strain-relieving SiGe metamorphic buffer layers for heteroepitaxy on Si. The SPE process is shown to result in a nanopatterning of the Ge concentration variation across the sample surface, visible by scanning and transmission electron microscopy (SEM and TEM). The concentration patterning is the result of a hexagonal network of Shockley partial dislocations at the SiGe/Si interface. Analyzing the pattern spacing observed by SEM is demonstrated as an easy, non-destructive method for obtaining the local strain state of SiGe layers. This work is important for engineering ultra-thin SiGe metamorphic buffer layers for III-V optoelectronics heteroepitaxy on the silicon platform.

cond-mat.mtrl-sci↗

arXiv2024

Ultra-thin strain-relieving Si$_{1-x}$Ge$_x$ layers enabling III-V epitaxy on Si

The explosion of artificial intelligence, possible end of Moore's law, dawn of quantum computing and continued exponential growth of data communications traffic have brought new urgency to the need for laser integration on the diversified Si platform. While diode lasers on III-V platforms have long powered internet data communications and other optoelectronic technologies, direct integration with Si remains problematic. A paradigm-shifting solution requires exploring new and unconventional materials and integration approaches. In this work, we show that a sub-10-nm ultra-thin Si$_{1-x}$Ge$_x$ buffer layer fabricated by an oxidative solid-phase epitaxy process can facilitate extraordinarily efficient strain relaxation. The Si$_{1-x}$Ge$_x$ layer is formed by ion implanting Ge into Si(111) and selectively oxidizing Si atoms in the resulting ion-damaged layer, precipitating a fully strain-relaxed Ge-rich layer between the Si substrate and surface oxide. The efficient strain relaxation results from the high oxidation temperature, producing a periodic network of dislocations at the substrate interface, coinciding with modulations of the Ge content in the Si$_{1-x}$Ge$_x$ layer and indicating the presence of defect-mediated diffusion of Si through the layer. The epitaxial growth of high-quality GaAs is demonstrated on this ultra-thin Si$_{1-x}$Ge$_x$ layer, demonstrating a promising new pathway for integrating III-V lasers directly on the Si platform.

cond-mat.mtrl-sci↗