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Venkataraman Swaminathan

Publications and source records attributed to Venkataraman Swaminathan.

2 recordsLinked to original sources

Nanoscopy of Excitons in Atomically Thin In-Plane Heterostructures with Nanointerfaces

Atomically sharp 2D in-plane heterostructures with nanoscale interfaces provide a powerful platform for tailoring optical and electrical properties at the nanoscale, enabling novel device engineering and the exploration of new physical phenomena. However, direct experimental correlation between local dielectric response and excitonic properties across such interfaces has remained elusive. Here, we probed the nanoscale complex dielectric function and the corresponding localized photoluminescence (PL) modulations in heterostructure domains of lateral monolayer MoxW1-xS2 - WxMo1-xS2, synthesized using a liquid-phase precursor-assisted approach. Near-field nano imaging across the visible-near-infrared range enables real space mapping of sharp amplitude and phase changes at the heterointerface, resolving the local complex dielectric function with nano-meter scale spatial resolution. Excitation energy-dependent nano spectroscopy reveals a reversal of dielectric contrast between Mo-rich and W-rich domains at their respective excitonic resonances, consistent with Lorentz-oscillator fits. Complementary hyperspectral nano-PL mapping resolves the evolution of excitonic emission across the lateral heterointerface, with neutral-exciton intensities varying continuously from W-rich to Mo-rich regions. Effective-medium theory modeling of the imaginary part of the effective dielectric function of the heterostructure as a function of photon energy and Mo filling fraction reproduces the observed excitonic trends, linking the PL evolution to a composition-dependent dielectric response. Together, these results provide direct nanoscale correlation between dielectric and excitonic boundaries in laterally stitched monolayer heterostructures and establish a multimodal near-field spectroscopy framework for probing excitonic phenomena at the nanoscale.

cond-mat.mtrl-sci↗

Sulfur Vacancy Related Optical Transitions in Graded Alloys of MoxW1-xS2 Monolayers

Engineering the electronic bandgap is of utmost importance in diverse domains ranging from information processing and communication technology to sensing and renewable energy applications. Transition metal dichalcogenides (TMDCs) provide an ideal platform for achieving this goal through techniques including alloying, doping, and creating in-plane or out-of-plane heterostructures. Here, we report on the synthesis and characterization of atomically controlled two-dimensional graded alloy of MoxW1-xS2, wherein the center region is Mo rich and gradually transitions towards a higher concentration of W atoms at the edges. This unique alloy structure leads to a continuously tunable bandgap, ranging from 1.85 eV in the center to 1.95 eV at the edges consistent with the larger band gap of WS2 relative to MoS2. Aberration-corrected high-angle annular dark-field scanning transmission electron microscopy showed the presence of sulfur monovacancy, VS, whose concentration varied across the graded MoxW1-xS2 layer as a function of Mo content with the highest value in the Mo rich center region. Optical spectroscopy measurements supported by ab initio calculations reveal a doublet electronic state of VS, which was split due to the spin-orbit interaction, with energy levels close to the conduction band or deep in the band gap depending on whether the vacancy is surrounded by W atoms or Mo atoms. This unique electronic configuration of VS in the alloy gave rise to four spin-allowed optical transitions between the VS levels and the valence bands. Our work highlights the potential of simultaneous defect and optical engineering of novel devices based on these 2D monolayers.

cond-mat.mtrl-sci↗