arXiv subjects

Vera Marinova

Publications and source records attributed to Vera Marinova.

7 recordsLinked to original sources

arXiv2026

Strain-Mediated Lattice Reconstruction Enhances Ferromagnetism in Cr2Ge2Te6/WTe2 van der Waals Heterobilayers

Van der Waals (vdW) heterostructures enable tailored electronic and magnetic phases by stacking atomically thin layers with pristine interfaces. Here, we investigate fully 2D Cr2Ge2Te6/WTe2 heterostructures and identify a strong enhancement of ferromagnetism in Cr2Ge2Te6 (CGT). Magnetotransport measurements across multiple devices with WTe2 thicknesses ranging from monolayer to bulk reveal a robust anomalous Hall effect together with a more than twofold increase of the Curie temperature and substantially enhanced coercive fields. Interface microscopy confirms chemically abrupt vdW interfaces with no detectable interdiffusion, while control experiments rule out processing- or stray-field-induced artifacts. Our experiments and theoretical calculations demonstrate that interfacial charge transfer renders CGT conductive and that proximity-induced lattice distortions in CGT enhance exchange and magnetocrystalline anisotropy. These results establish strain-mediated lattice reconstruction as a strategy for engineering high-temperature magnetic order in 2D heterostructures and clarify that modifications within the magnetic layer itself can govern proximity effects in vdW stacks.

cond-mat.mtrl-sci↗

arXiv2026

Hanle lineshapes and spin-rotation signatures from in-plane anisotropic spin relaxation in heterogeneous spin devices

Spin precession experiments in lateral spin devices are a powerful tool for probing the spin transport properties of materials. These experiments can be quantitatively described using the Bloch diffusion equation, which offers a practical framework for modeling spin-related phenomena. In this work, we present calculations of the spin density across heterogeneous, diffusive spintronic devices. The modeled devices feature spin transport channels that include both isotropic and in-plane anisotropic spin relaxation regions. We analyze how different geometric configurations and spin transport parameters influence the lineshape of spin precession signals under magnetic fields applied in different orientations and compare with experimental observations. Our results introduce a theoretical framework for interpreting spin transport measurements in lateral graphene spin devices. The framework is especially relevant when the graphene is partially proximitized by other two-dimensional materials, where proximity-induced spin-orbit coupling leads to anisotropic spin relaxation.

cond-mat.mes-hall↗

arXiv2025

Room-temperature anisotropic in-plane spin dynamics in graphene induced by PdSe$_2$ proximity

Van der Waals heterostructures offer a versatile platform for tailoring electrical, magnetic, optical, and spin transport properties of materials through proximity effects. Notably, hexagonal transition metal dichalcogenides have been shown to induce valley-Zeeman spin-orbit coupling (SOC) in graphene, resulting in significant spin lifetime anisotropy between in-plane and out-of-plane spin orientations. However, in-plane lifetimes remain isotropic due to the inherent threefold symmetry of the heterostructure. Here, we demonstrate that pentagonal PdSe$_2$, characterised by unique in-plane anisotropy, induces an unprecedented gate-tunable SOC in graphene. Our measurements reveal a remarkable 10-fold modulation of the spin lifetime for spins oriented within the graphene plane at room temperature. Moreover, the directional dependence of the spin lifetimes, along the three spatial directions, suggests the existence of a persistent in-plane spin texture component that dominates the spin dynamics. These findings deepen our understanding of spin dynamics in van der Waals heterostructures and open avenues for designing and engineering novel topological phases in graphene-based heterostructures within the strong SOC regime.

cond-mat.mes-hall↗

arXiv2023

Experimental demonstration of a magnetically induced warping transition in a topological insulator mediated by rare-earth surface dopants

Magnetic topological insulators (MTI) constitute a novel class of materials where the topologically protected band structure coexists with long-range ferromagnetic order, which can lead to the breaking of time-reversal symmetry (TRS), introducing a bandgap in the Dirac cone-shaped topological surface state (TSS). The gap opening in MITs has been predicted to be accompanied by a distortion in the TSS, evolving its warped shape from hexagonal to trigonal. In this work, we demonstrate such a transition by means of angle-resolved photoemission spectroscopy after the deposition of low concentrations of magnetic rare earths, namely Er and Dy, on the ternary three-dimensional prototypical topological insulator Bi$_2$Se$_2$Te. Signatures of the gap opening occurring as a consequence of the TRS breaking have also been observed, whose existence is supported by the observation of the aforementioned transition. Moreover, increasing the Er coverage results in a tunable p-type doping of the TSS. As a consequence, the Fermi level (E$_{\textrm{F}}$) of our Bi$_2$Se$_2$Te crystals can be gradually tuned towards the TSS Dirac point, and therefore to the magnetically induced bandgap; thus fulfilling two of the necessary prerequisites for the realization of the quantum anomalous Hall effect (QAHE) in this system. The experimental results are rationalized by a theoretical model where a magnetic Zeeman out-of-plane term is introduced in the hamiltonian governing the TSS band dispersion. Our results offer new strategies to control magnetic interactions with TSSs based on a simple approach and open up viable routes for the realization of the QAHE.

cond-mat.mes-hall↗

arXiv2022

Resolving spin currents and spin densities generated by charge-spin interconversion in systems with reduced crystal symmetry

The ability to control the generation of spins in arbitrary directions is a long-sought goal in spintronics. Charge-to-spin interconversion (CSI) phenomena depend strongly on symmetry. Systems with reduced crystal symmetry allow anisotropic CSI with unconventional components, where charge and spin currents and the spin polarization are not mutually perpendicular to each other. Here, we demonstrate experimentally that the CSI in graphene-WTe2 induces spins with components in all three spatial directions. By performing multi-terminal nonlocal spin precession experiments, with specific magnetic field orientations, we discuss how to disentangle the CSI from the spin Hall and inverse spin galvanic effects.

cond-mat.mes-hall↗

arXiv2017

Simultaneous detection of quantum oscillations from bulk and topological surface states in metallic Bi2Se2.1Te0.9

Shubnikov-de Haas (SdH) oscillations in metallic Bi2Se2.1Te0.9 are studied in magnetic fields up to 35 Tesla. It is demonstrated that two characteristic frequencies determine the quantum oscillations of the conductivity. Angle dependent measurements and calculations of the Berry phase show that the two frequencies F1 and F2 describe oscillations from surface and bulk carriers, respectively. At low magnetic fields, only SdH oscillation from topological surface states can be detected whereas at high magnetic field the bulk oscillations dominate. The origin of the separation of bulk and surface SdH oscillations into different magnetic field ranges is revealed in the difference of the cyclotron masses mc. The bulk mc is nearly three times larger than the surface cyclotron mass resulting in a stronger attenuation of the bulk oscillation amplitude upon decreasing magnetic field. This makes it possible to detect and characterize the surface SdH oscillations in the low-field range and the bulk oscillations at high magnetic fields.

cond-mat.str-el↗

arXiv2014

Shubnikov-de Haas oscillations from topological surface states of metallic Bi$_2$Se$_{2.1}$Te$_{0.9}$

We have studied the quantum oscillations in the conductivity of metallic, p-type Bi$_2$Se$_{2.1}$Te$_{0.9}$. The dependence of the oscillations on the angle of the magnetic field with the surface as well as the Berry phase determined from the Landau level fan plot indicate that the observed oscillations arise from surface carriers with the characteristic Dirac dispersion. Several quantities characterizing the surface conduction are calculated employing the Lifshitz-Kosevich theory. The low value of the Fermi energy with respect to the Dirac point is consistent with the metallic character of the bulk hole carriers. We conclude that, due to the peculiar shape of the valence band, the Shubnikov-de Haas oscillations of the bulk carriers are shifted to higher magnetic fields which allows for the detection of the quantum oscillations from the topological surface states at lower field.

cond-mat.mes-hall↗