Searcharxiv⌕ Search

arXiv subjects

Vicente Chomalí-Castro

Publications and source records attributed to Vicente Chomalí-Castro.

2 recordsLinked to original sources

Solving BDNK diffusion using physics-informed neural networks

In this work, we reformulate the relativistic BDNK (Bemfica-Disconzi-Noronha-Kovtun) diffusion equation in flux-conservative form, and solve the resulting equations in $(1+1)$D using both a second-order Kurganov-Tadmor finite volume scheme and physics-informed neural networks (PINNs). In particular, we introduce the SA-PINN-ACTO framework, which combines the self-adaptive PINN technique with an exact enforcement of initial and periodic boundary conditions through an algebraic transform of the network's raw output, allowing the network to focus solely on minimizing the PDE residual. We test both approaches on smooth and discontinuous initial data, for both trivial and dynamically evolving velocity and temperature BDNK backgrounds, and for two characteristic speeds. The SA-PINN-ACTO method matches the converged Kurganov-Tadmor solutions for smooth profiles, while for discontinuous profiles the errors increase, reflecting an expected limitation of PINNs near sharp gradients.

nucl-th↗

Magnetic and phonon-induced effects on the non-Markovian dynamics of a single solid-state defect

The electron-phonon interaction is one of the most fundamental mechanisms in condensed matter physics. Phonons can induce memory effects in solid-state platforms when localized electronic states interact with lattice vibrations in non-unitary dynamical maps. In this work, we demonstrate how single-mode and structured phonon environments can give rise to non-Markovian dynamics of an individual negatively charged silicon-vacancy center in diamond. Using trace distance as a quantifier via numerical simulations and theoretical calculations, we identify the physical conditions for emerging and understanding non-Markovian behavior in diverse scenarios. Most importantly, we investigate the influence of magnetic fields (longitudinal and transverse), phonon couplings, Fock states, and temperature to understand how these factors influence memory effects in this solid-state device.

quant-ph↗