arXiv subjects

Vicky Hasse

Publications and source records attributed to Vicky Hasse.

7 recordsLinked to original sources

arXiv2026

Bonding Signatures of Incipient Electron Localization in Topological Chiral Semimetals Near the Metal-Insulator Transition

How do electronic localization and delocalization compete in solids beyond the traditional limiting cases of metals and iono-covalent insulators? Topological chiral semimetals (TCSMs), characterized by their unique crystal symmetry, offer an intriguing platform to explore this question. Here, we systematically compare TCSMs with covalent compounds, ordinary metals, and metavalent solids (incipient metals), and show that TCSMs occupy a distinct region in a multidimensional property fingerprint. Atom probe tomography reveals an unusual bond-rupture signature, consistent with a bonding regime intermediate between electron localization and delocalization. This interpretation is supported by measurements of optical properties showing a transfer of spectral weight from interband to intraband transitions. For highly conductive TCSMs, this transition is accompanied by the disappearance of the Born effective charge, a measure of chemical bond polarizability, while less conductive TCSMs retain a nonzero value. Together, these results identify a property based bonding perspective on TCSMs that distinguishes them from metals, covalent solids, and metavalent compounds. Although metavalent solids and TCSMs both lie near the metal-insulator transition and exhibit distorted crystal structures, ultrafast coherent phonon spectroscopy reveals fundamentally different lattice-dynamical responses: a phonon-driven Peierls-like instability in metavalent solids versus a robust chiral B20 bonding motif in TCSMs.

cond-mat.mtrl-sci↗

arXiv2026

Detecting the full photoemission cone from laser-based ARPES experiments by leveraging deflector technology

Angle-resolved photoemission spectroscopy (ARPES) provides a direct access to the electronic band structure of solid and molecular systems. The momentum range accessible by this technique depends directly on the photon energy used, and low-photon-energy sources are insufficient to photoemit electrons over the full Brillouin zone of most quantum materials. In addition, while electrons are emitted over a 2$\pi$ solid angle, conventional hemispherical analyzers only collect a small subset of those electrons. A previous work [RSI 92, 123907 (2021)] demonstrated that electrons emitted over a larger field-of-view can be acquired in one fixed configuration by accelerating them towards the analyzer with a bias voltage. Here, we extend this work by leveraging the deflector technology of novel ARPES hemispherical analyzers. We demonstrate the ability to detect all $2\pi$ photoemitted electrons in a fixed configuration for various materials such as gold, cuprates and transition-metal dichalcogenides. This approach is especially advantageous for time-resolved ARPES, as electron dynamics over a large momentum range can be accessed with identical measurement conditions.

cond-mat.mtrl-sci↗

arXiv2025

Orientation Dependent Resistivity Scaling in Mesoscopic NbP Crystals

The scaling of Si transistor technology has resulted in a remarkable improvement in the performance of integrated circuits over the last decades. However, scaled transistors also require reduced electrical interconnect dimensions, which lead to greater losses and power dissipation at circuit level. This is mainly caused by enhanced surface scattering of charge carriers in copper interconnect wires at dimensions below 30 nm. A promising approach to mitigate this issue is to use directional conductors, i.e. materials with anisotropic Fermi surface, where proper alignment of crystalline orientation and transport direction can minimize surface scattering. In this work, we perform a resistivity scaling study of the anisotropic semimetal NbP as a function of crystalline orientation. We use here focused ion beam to pattern and scale down NbP crystallites to dimensions comparable to the electron scattering length at cryogenic temperatures. The experimental transport properties are correlated with the Fermi surface characteristics through a theoretical model, thus identifying the physical mechanisms that influence the resistivity scaling of anisotropic conductors. Our methodology provides an effective approach for early evaluation of anisotropic materials as future ultra-scalable interconnects, even when they are unavailable as epitaxial films.

cond-mat.mes-hall↗

arXiv2025

Spin-forbidden excitations in the magneto-optical spectra of CrI$_3$ tuned by covalency

Spin-forbidden ($\Delta S \neq 0$) multiplet excitations and their coupling to magnetic properties are of increasing importance for magneto-optical studies of correlated materials. Nonetheless, the mechanisms for optically brightening these transitions and their generality remain poorly understood. Here, we report magnetic circular dichroism (MCD) spectroscopy on the van der Waals (vdW) ferromagnet (FM) CrI$_3$. Previously unreported spin-forbidden ($\Delta S = 1$) ${}^4A_{2\mathrm{g}} \to{}^2E_\mathrm{g}/{}^2T_{1\mathrm{g}}$ Cr${}^{3+}$ $dd$ excitations are observed near the ligand-to-metal charge transfer (LMCT) excitation threshold. The assignment of these excitations and their Cr$^{3+}$ multiplet character is established through complementary Cr $L_3$-edge resonant inelastic X-ray scattering (RIXS) measurements along with charge transfer multiplet (CTM) calculations and chemical trends in the chromium trihalide series (CrX$_3$, X = Cl, Br, I). We utilize the high sensitivity of MCD spectroscopy to study the thickness dependent optical response. The spin-forbidden excitations remain robust down to the monolayer limit and exhibit a significant magnetic field tunability across the antiferromagnetic to FM transition in few-layer samples. This behavior is associated to changes in the metal-ligand covalency with magnetic state, as supported by our CTM analysis. Our results clarify the magneto-optical response of CrI$_3$ and identify covalency as a central mechanism for the brightening and field-tunability of spin-forbidden multiplet excitations.

cond-mat.str-el↗

arXiv2025

Engineering Magnetotransport Through Hierarchical Symmetry in Weyl Semimetal Superlattices

Superlattice engineering is a powerful way to tune the transport properties of a material. In this work we show that magnetotransport can be modified by superlattices in 3D materials based on the relative symmetry between the Fermi-surface and superlattice. We demonstrate commensuration oscillations in the ballistic transport regime of a nanostructured 3D material with the Weyl semimetal NbP, a signature typically limited to superlattices in 2D materials. The behavior of the oscillations encodes information about the shared properties between the quasiparticles at the Fermi-surface--including their momentum, charge, mass, and rotational symmetry--and the structure of the superlattice. The magnetic field and temperature dependence of the commensuration oscillations enables us to extract the Fermi-momenta and quasiparticle mass at an order of magnitude lower magnetic field and higher temperature than Shubnikov-de Haas quantum oscillations. Furthermore, we use a chiral superlattice to engineer asymmetric longitudinal magnetoresistance based on the charge of the quasiparticles and superlattice enantiomer. These results demonstrate nanopatterned superlattices as an effective method for fermiology, and also point towards new ways of engineering quantum transport in these systems based on the mutual properties of the superlattice and Fermi-surface.

cond-mat.mes-hall↗

arXiv2024

Momentum-Resolved Fingerprint of Mottness in Layer-Dimerized Nb$_3$Br$_8$

In a well-ordered crystalline solid, insulating behaviour can arise from two mechanisms: electrons can either scatter off a periodic potential, thus forming band gaps that can lead to a band insulator, or they localize due to strong interactions, resulting in a Mott insulator. For an even number of electrons per unit cell, either band- or Mott-insulators can theoretically occur. However, unambiguously identifying an unconventional Mott-insulator with an even number of electrons experimentally has remained a longstanding challenge due to the lack of a momentum-resolved fingerprint. This challenge has recently become pressing for the layer dimerized van der Waals compound Nb$_3$Br$_8$, which exhibits a puzzling magnetic field-free diode effect when used as a weak link in Josephson junctions, but has previously been considered to be a band-insulator. In this work, we present a unique momentum-resolved signature of a Mott-insulating phase in the spectral function of Nb$_3$Br$_8$: the top of the highest occupied band along the out-of-plane dimerization direction $k_z$ has a momentum space separation of $\Delta k_z=2\pi/d$, whereas the valence band maximum of a band insulator would be separated by less than $\Delta k_z=\pi/d$, where $d$ is the average spacing between the layers. As the strong electron correlations inherent in Mott insulators can lead to unconventional superconductivity, identifying Nb$_3$Br$_8$ as an unconventional Mott-insulator is crucial for understanding its apparent time-reversal symmetry breaking Josephson diode effect. Moreover, the momentum-resolved signature employed here could be used to detect quantum phase transition between band- and Mott-insulating phases in van der Waals heterostructures, where interlayer interactions and correlations can be easily tuned to drive such transition.

cond-mat.str-el↗

arXiv2022

Topological Metal MoP Nanowire for Interconnect

The increasing resistance of Cu interconnects for decreasing dimensions is a major challenge in continued downscaling of integrated circuits beyond the 7-nm technology node as it leads to unacceptable signal delays and power consumption in computing. The resistivity of Cu increases due to electron scattering at surfaces and grain boundaries of the interconnects at the nanoscale. Topological semimetals, owing to their topologically protected surface states and suppressed electron backscattering, are promising material candidates to potentially replace current Cu interconnects as low-resistance interconnects. Here, we report the attractive resistivity scaling of topological metal MoP nanowires and show that the resistivity values are comparable to those of Cu interconnects below 500 nm$^2$ cross-section areas. More importantly, we demonstrate that the dimensional scaling of MoP nanowires, in terms of line resistance versus total cross-sectional area, is superior to those of effective Cu and barrier-less Ru interconnects, suggesting MoP is an attractive solution to the current scaling challenge of Cu interconnects.

cond-mat.mtrl-sci↗