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Victor Pardo

Publications and source records attributed to Victor Pardo.

33 records · Page 2Linked to original sources

Efficient thermoelectric materials using nonmagnetic double perovskites with $d^0$/$d^6$ band filling

Efficient thermoelectric materials should present large Seebeck coefficient, high electrical conductivity and low thermal conductivity. An enhanced Seebeck coefficient can be obtained from materials where the Fermi level can be aligned with a large and narrow peak of the density of states, particularly when a substantial band valley degeneracy occurs. A high electrical conductivity comes as a consequence of large conductive hopping paths between the atoms of the material. Both physical quantities can be decoupled and optimized independently if their origins can be ascribed to different sets of bands. Based on these assumptions, double perovskites A$_2$BB'O$_6$ with $d^0/d^6$ filling for the B and B' metal cations, respectively, have been considered. They provide a desirable band structure with degenerate B-$t_{2g}$ / B'-$e_g$ bands above the Fermi level together with a low thermal conductivity. We have carried out first-principles simulations for various of these nonmagnetic double perovskites and showed that all of them present a large Seebeck coefficient (consequence of the localized and empty $t_{2g}$ states of the B-cation), and large electrical conductivity due to the more spread unoccupied $e_{g}$ band of the B' cation. We have seen that if they can be optimally doped, they could show a figure of merit comparable or even higher than the best $n$-type thermoelectric oxides, such as SrTiO$_{3}$. Different mechanisms to tune the band structure and enhance the thermoelectric figure of merit are explored, including epitaxial strain, hydrostatic pressure, chemical pressure, and external doping. A fully relaxed structure has also been studied, showing that a realistic calculation is necessary to make accurate predictions, but also proving that the main trends shown throughout the paper remain unchanged.

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Nitride Multilayers as a Platform for Parallel Two-Dimensional Electron-Hole Gases: MgO/ScN(111)

At interfaces between insulating oxides LaAlO$_3$ and SrTiO$_3$, a two dimensional electron gas (2DEG) has been observed and well studied, while the predicted hole gas (2DHG) has not been realized due to the strong tendency of holes in oxygen $2p$ orbitals to localize. Here we propose, via ab initio calculations, an unexplored class of materials for the realization of parallel two dimensional (2D), two carrier (electron+hole) gases: nitride-oxide heterostructures, with (111)-oriented ScN and MgO as the specific example. Beyond a critical thickness of five ScN layers, this interface hosts spatially separated conducting Sc-$3d$ electrons and N-$2p$ holes, each confined to $\sim$two atomic layers -- the transition metal nitride provides both gases. A guiding concept is that the N$^{3-}$ anion should promote robust two carrier 2D hole conduction compared to that of O$^{2-}$; metal mononitrides are mostly metallic and even superconducting while most metal monoxides are insulating. A second positive factor is that the density of transition metal ions, hence of a resulting 2DG, is about three times larger for a rocksalt (111) interface than for a perovskite(001) interface. Our results, including calculation of Hall coefficient and thermopower for each conducting layer separately, provide guidance for new exploration, both experimental and theoretical, on nitride-based conducting gases that should promote study of long sought exotic states viz. new excitonic phases and distinct, nanoscale parallel superconducting nanolayers.

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Ab initio study of nontrivial topological phases in corundum structured $($M$_2$O$_3)/($Al$_2$O$_3)_5$ multilayers

\textit{Ab initio} calculations have been performed on hexagonal layers of M$_2$O$_3$ (M being several transition metals of the $5d$ series) sandwiched by a band insulator such as Al$_2$O$_3$ that provides the honeycomb lattice where the $5d$ electrons reside. This corundum-structure-based superlattice is the most obvious way to design a honeycomb lattice with transition metal cations avoiding the use of largely polar surfaces. We obtain that this system supports the presence of Dirac cones at the Fermi level that open up with the introduction of spin-orbit coupling at various fillings of the $5d$ band. The DFT calculations performed in this work show that the $5d^5$ situation is always a trivial insulator, whereas the $5d^8$ filling presents topological insulating configurations which evolve into a trivial state with increasing tensile strain or on-site Coulomb potential U. However, LDA+U calculations show a stable antiferromagnetic solution for the $5d^8$ case at every U value, which would break time reversal symmetry and could affect the topological properties of the system. We also discuss the similarities with the buckled honeycomb lattice obtained using perovskite (111) bilayers previously studied in literature, in particular for the $5d^5$ and $5d^8$ configurations. This work provides some clues on the stability of topological phases using metal oxides in general.

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Charge ordering at the interface in (LaMnO$_3$)$_{2n}$/(SrMnO$_3$)$_n$ superlattices as the origin of their insulating state

We have performed ab initio calculations within the LDA+U method in the multilayered system (LaMnO$_3$)$_{2n}$ / (SrMnO$_3$)$_n$. Our results suggest a charge-ordered state that alternates Mn$^{3+}$ and Mn$^{4+}$ cations in a checkerboard in-plane pattern is developed at the interfacial layer, leading to a gap opening. Such an interfacial charge-ordered situation would be the energetically favored reconstruction between LaMnO$_3$ and SrMnO$_3$. This helps understanding the insulating behavior observed experimentally in these multilayers at intermediate values of $n$, whose origin is known to be due to some interfacial mechanism.

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Strain effects to optimize the thermoelectric properties of hole-doped La$_2$NiO$_{4+δ}$ via ab initio calculations

Thermoelectric properties of the system La$_2$NiO$_{4+δ}$ have been recently discussed [Phys. Rev. B 86, 165114 (2012)] via ab initio calculations. An optimum hole-doping value was obtained with reasonable thermopower and thermoelectric figure of merit being calculated. Here, a large increase in the thermoelectric performance through lattice strain and the corresponding atomic relaxations is predicted. This increase would be experimentally attainable via growth in thin films of the material on top of different substrates. A small tensile strain would produce large thermoelectric figures of merit at high temperatures, $zT$ $\sim$ 1 in the range of oxygen excess $δ$ $\sim$ 0.05 - 0.10 and in-plane lattice parameter in the range 3.95 - 4.05 Å. In that relatively wide range of parameters, thermopower values close to 200 $μ$V/K are obtained. The best performance of this compound is expected to occur in the high temperature limit.

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Formal Valence, $d$ Occupation, and Charge-Order Transitions

While the formal valence and charge state concepts have been tremendously important in materials physics and chemistry, their very loose connection to actual charge leads to uncertainties in modeling behavior and interpreting data. We point out, taking several transition metal oxides (La$_2$VCuO$_6$, YNiO$_3$, CaFeO$_3$, AgNiO$_2$, V$_4$O$_7$) as examples, that while dividing the crystal charge into atomic contributions is an ill-posed activity, the 3d occupation of a cation (and more particularly, differences) is readily available in first principles calculations. We discuss these examples, which include distinct charge states and charge-order (or disproportionation) systems, where different "charge states" of cations have identical 3d orbital occupation. Implications for theoretical modeling of such charge states and charge-ordering mechanisms are discussed.

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Enhanced thermoelectric response of hole-doped La$_2$NiO$_{4+δ}$ by ab initio calculations

Thermoelectric properties of the system La$_2$NiO$_{4+δ}$ have been studied ab initio. Large Seebeck coefficient values are predicted for the parent compound, and to some extent remain in the hole-doped metallic phase, accompanied of an increase in the conductivity. This system, due to its layered structure would be a suitable candidate for an improvement of its thermoelectric figure of merit by nanostructurization in thin films, that has already been shown to increase the electrical conductivity ($σ$). Our calculations show that in the region around La$_2$NiO$_{4.05}$ the system has a large thermopower at high temperatures and also a substantially increased $σ$. Films grown with this low-doping concentration will show an optimal relationship between thermopower and $σ$. This result is obtained for various exchange-correlation schemes (correlated, uncorrelated and parameter-free) that we use to analyze the electronic structure of the hole-doped compound.

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Pressure-induced metal-insulator and spin-state transition in low-valence layered nickelates

Ab initio calculations predict a metal-insulator transition at zero temperature to occur in La$_4$Ni$_3$O$_8$ at moderate pressures as a result of a pressure-induced spin-state transition. The spin-state transition that is seen at 105 K at ambient pressure from a low-temperature high-spin state to a high-temperature low-spin state has been observed to be shifted to lower temperatures as pressure is applied. From our calculations we find that a smaller unit cell volume favors the metallic low-spin state, which becomes more stable at 5 GPa. Similar physics should take place in the related compound La$_3$Ni$_2$O$_6$, but on a different energy scale, which may account for why the transition has not been observed in this material.

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Metal-insulator transition in layered nickelates La$_3$Ni$_2$O$_{7-δ}$ ($δ$=0.0, 0.5, 1)

Three low-valence layered nickelates with general formula La$_3$Ni$_2$O$_{7-δ}$ ($δ$=0.0, 0.5, 1) are studied by ab initio techniques. Both the insulating and metallic limits are analyzed, together with the compound at the Mott transition ($δ$= 0.5; Ni$^{2+}$), that shows insulating behavior, with all Ni atoms in a S=1 high-spin state. The compound in the $δ$= 1 limit (La$_3$Ni$_2$O$_6$), with mean formal valence Ni$^{1.5+}$ and hence nominally metallic, nevertheless shows a correlated {\it molecular} insulating state, produced by the quantum confinement of the NiO$_2$ bilayers and the presence of mainly d$_{z^2}$ bands (bonding-antibonding split) around the gap. The metallic compound shows a larger bandwidth of the e$_g$ states that can sustain the experimentally observed paramagnetic metallic properties. The evolution of the in-plane antiferromagnetic coupling with the oxygen content is discussed, and also the similarities of this series of compounds with the layered superconducting cuprates.

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Evaluation of Compensated Magnetism in La$_2$VCuO$_6$: Exploration of Charge States

We present an ab initio study of double perovskite La$_2$VCuO$_6$, which was one of the earliest compounds suggested as a potential compensated half-metal. Two charge and spin configurations close in energy have been identified. (i) The originally envisioned spin-compensated V$^{4+}$:d$^1$/Cu$^{2+}$:d$^1$ configuration is comprised of antialigned S=1/2 cations. This state is a spin-compensated half-metal for moderate values of U (the on-site Coulomb repulsion strength on the metal ions) and is insulating for larger values of U. (ii) An unanticipated non-magnetic solution V$^{5+}$:d$^0$/Cu$^{+}$:d$^{10}$ consists of an empty- and a full-shell ion, both spherically symmetric, that leads to a band insulator. This ionic band insulator is calculated to be the ground state at small and moderate values of U. The different distortions of the perovskite structure that occur for each state are central in determining the energy differences. Treating the Cu$^{2+}$ Jahn-Teller distortion self-consistently is particularly important for the magnetic solution.

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Quantum Confinement Induced Molecular Mott Insulating State in La$_4$Ni$_3$O$_8$

The recently synthesized layered nickelate La$_4$Ni$_3$O$_8$, with its cuprate-like NiO$_2$ layers, seemingly requires a Ni1 ($d^8$)+2Ni2 ($d^9$) charge order, together with strong correlation effects, to account for its insulating behavior. Using density functional methods including strong intra-atomic repulsion (Hubbard U), we obtain an insulating state via a new mechanism: {\it without charge order}, Mott insulating behavior arises based on quantum coupled, spin-aligned Ni2-Ni1-Ni2 $d_{z^2}$ states across the trilayer (rather than based on atomic states), with antiferromagnetic ordering within layers. The weak and frustrated magnetic coupling between cells may account for the small spin entropy that is removed at the Néel transition at 105 K and the lack of any diffraction peak at the Néel point.

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Electron Confinement, Orbital Ordering, and Orbital Moments in $d^0$-$d^1$ Oxide Heterostructures

The (SrTiO$_3$)$_m$/(SrVO$_3$)$_n$ $d^0-d^1$ multilayer system is studied with first principles methods through the observed insulator-to-metal transition with increasing thickness of the SrVO$_3$ layer. When correlation effects with reasonable magnitude are included, crystal field splittings from the structural relaxations together with spin-orbit coupling (SOC) determines the behavior of the electronic and magnetic structures. These confined slabs of SrVO$_3$ prefer $Q_{orb}$=($π,π$) orbital ordering of $\ell_z = 0$ and $\ell_z = -1$ ($j_z=-1/2$) orbitals within the plane, accompanied by $Q_{spin}$=(0,0) spin order (ferromagnetic alignment). The result is a SOC-driven ferromagnetic Mott insulator. The orbital moment of 0.75 $μ_B$ strongly compensates the spin moment on the $\ell_z = -1$ sublattice. The insulator-metal transition for $n = 1 \to 5$ (occurring between $n$=4 and $n$=5) is reproduced. Unlike in the isoelectronic $d^0-d^1$ TiO$_2$/VO$_2$ (rutile structure) system and in spite of some similarities in orbital ordering, no semi-Dirac point [{\it Phys. Rev. Lett.} {\bf 102}, 166803 (2009)] is encountered, but the insulator-to-metal transition occurs through a different type of unusual phase. For n=5 this system is very near (or at) a unique semimetallic state in which the Fermi energy is topologically determined and the Fermi surface consists of identical electron and hole Fermi circles centered at $k$=0. The dispersion consists of what can be regarded as a continuum of radially-directed Dirac points, forming a "Dirac circle".

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Metal-insulator transition through a semi-Dirac point in oxide nanostructures: VO$_2$ (001) layers confined within TiO$_2$

Multilayer (TiO$_2$)$_m$/(VO$_2$)$_n$ nanostructures ($d^1$ - $d^0$ interfaces with no polar discontinuity) show a metal-insulator transition with respect to the VO$_2$ layer thickness in first principles calculations. For $n$ $\geq$ 5 layers, the system becomes metallic, while being insulating for $n$ = 1 and 2. The metal-insulator transition occurs through a semi-Dirac point phase for $n$ = 3 and 4, in which the Fermi surface is point-like and the electrons behave as massless along the zone diagonal in k-space and as massive fermions along the perpendicular direction. We provide an analysis of the evolution of the electronic structure through this unprecedented insulator-to-metal transition, and identify it as resulting from quantum confinement producing a non-intuitive orbital ordering on the V $d^1$ ions, rather than being a specific oxide interface effect. Spin-orbit coupling does not destroy the semi-Dirac point for the calculated ground state, where the spins are aligned along the rutile c-axis, but it does open a substantial gap if the spins lie in the basal plane.

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Compensated magnetism by design in double perovskite oxides

Taking into account Goodenough's superexchange rules, including both full structural relaxation and spin-orbit coupling, and checking strong correlation effects, we look for compensated half metals within the class of oxide double perovskites materials. Identifying likely half metallic (or half semimetallic) antiferromagnets, the full complications including orbital magnetism are included in order to arrive at realistic predictions of designed magnetic compounds with (near) vanishing net moment. After sorting through several candidates that have not been considered previously, two materials, K$_2$MnRhO$_6$ and La$_2$CrWO$_6$, remain as viable candidates. An important factor is obtaining compounds either with very small induced orbital moment (helped by closed subshells) or with an orbital moment that compensates the spin-orbit driven degradation of half metallic character. While thermodynamic stability of these materials cannot be ensured, the development of layer-by-layer oxide deposition techniques does not require that materials be thermodynamically stable to be synthesized.

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Half-metallic semiDirac point generated by quantum confinement in TiO$_2$/VO$_2$ nanostructures

Multilayer VO$_2$/TiO$_2$ nanostructures ($d^1$ - $d^0$ interfaces with no polar discontinuity) are studied with first principles density functional methods including structural relaxation. Quantum confinement of the {\it half metallic} VO$_2$ slab within insulating TiO$_2$ produces an unexpected and unprecendented two-dimensional new state, with a {\it semiDirac} point Fermi surface: spinless charge carriers are effective-mass like along one principal axis, but are massless along the other. Effects of interface imperfection are addressed.

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