arXiv subjects

Victor W. Brar

Publications and source records attributed to Victor W. Brar.

26 records · Page 2Linked to original sources

arXiv2015

Observing Atomic Collapse Resonances in Artificial Nuclei on Graphene

Relativistic quantum mechanics predicts that when the charge of a superheavy atomic nucleus surpasses a certain threshold, the resulting strong Coulomb field causes an unusual atomic collapse state; this state exhibits an electron wave function component that falls toward the nucleus, as well as a positron component that escapes to infinity. In graphene, where charge carriers behave as massless relativistic particles, it has been predicted that highly charged impurities should exhibit resonances corresponding to these atomic collapse states. We have observed the formation of such resonances around artificial nuclei (clusters of charged calcium dimers) fabricated on gated graphene devices via atomic manipulation with a scanning tunneling microscope. The energy and spatial dependence of the atomic collapse state measured with scanning tunneling microscopy revealed unexpected behavior when occupied by electrons.

cond-mat.mes-hall↗

arXiv2014

Electronic modulation of infrared emissivity in graphene plasmonic resonators

Electronic control of blackbody emission from graphene plasmonic resonators on a silicon nitride substrate is demonstrated at temperatures up to 250 C. It is shown that the graphene resonators produce antenna-coupled blackbody radiation, manifest as narrow spectral emission peaks in the mid-IR. By continuously varying the nanoresonators carrier density, the frequency and intensity of these spectral features can be modulated via an electrostatic gate. We describe these phenomena as plasmonically enhanced radiative emission originating both from loss channels associated with plasmon decay in the graphene sheet and from vibrational modes in the SiNx.

cond-mat.mes-hall↗

arXiv2013

Tunable Large Resonant Absorption in a Mid-IR Graphene Salisbury Screen

Enhancing the interaction strength between graphene and light is an important objective for those seeking to make graphene a relevant material for future optoelectronic applications. Plasmonic modes in graphene offer an additional pathway of directing optical energy into the graphene sheet, while at the same time displaying dramatically small optical confinement factors that make them an interesting means of coupling light to atomic or molecular emitters. Here we show that graphene plasmonic nanoresonators can be placed a quarter wavelength from a reflecting surface and electronically tuned to mimic a surface with an impedance closely matched to freespace (Z0 = 377Ω). This geometry - known in early radar applications as a Salisbury screen - allows for an order of magnitude (from 2.3 to 24.5%) increase of the optical absorption in the graphene and provides an efficient means of coupling to the highly confined graphene plasmonic modes.

cond-mat.mes-hall↗

arXiv2012

Mapping Dirac Quasiparticles near a Single Coulomb Impurity on Graphene

The response of Dirac fermions to a Coulomb potential is predicted to differ significantly from the behavior of non-relativistic electrons seen in traditional atomic and impurity systems. Surprisingly, many key theoretical predictions for this ultra-relativistic regime have yet to be tested in a laboratory. Graphene, a 2D material in which electrons behave like massless Dirac fermions, provides a unique opportunity to experimentally test such predictions. The response of Dirac fermions to a Coulomb potential in graphene is central to a wide range of electronic phenomena and can serve as a sensitive probe of graphene's intrinsic dielectric constant, the primary factor determining the strength of electron-electron interactions in this material. Here we present a direct measurement of the nanoscale response of Dirac fermions to a single Coulomb potential placed on a gated graphene device. Scanning tunneling microscopy and spectroscopy were used to fabricate tunable charge impurities on graphene and to measure how they are screened by Dirac fermions for a Q = +1|e| impurity charge state. Electron-like and hole-like Dirac fermions were observed to respond very differently to tunable Coulomb potentials. Comparison of this electron-hole asymmetry to theoretical simulations has allowed us to test basic predictions for the behavior of Dirac fermions near a Coulomb potential and to extract the intrinsic dielectric constant of graphene: ε_g= 3.0 \pm 1.0. This small value of ε_g indicates that microscopic electron-electron interactions can contribute significantly to graphene properties.

cond-mat.mes-hall↗

arXiv2010

Gate-Controlled Ionization and Screening of Cobalt Adatoms on a Graphene Surface

We describe scanning tunneling spectroscopy (STS) measurements performed on individual cobalt (Co) atoms deposited onto backgated graphene devices. We find that Co adatoms on graphene can be ionized by either the application of a global backgate voltage or by the application of a local electric field from a scanning tunneling microscope (STM) tip. Large screening clouds are observed to form around Co adatoms ionized in this way, and we observe that some intrinsic graphene defects display a similar behavior. Our results provide new insight into charged impurity scattering in graphene, as well as the possibility of using graphene devices as chemical sensors.

cond-mat.mtrl-sci↗

arXiv2009

Origin of Spatial Charge Inhomogeneity in Graphene

In an ideal graphene sheet charge carriers behave as two-dimensional (2D) Dirac fermions governed by the quantum mechanics of massless relativistic particles. This has been confirmed by the discovery of a half-integer quantum Hall effect in graphene flakes placed on a SiO2 substrate. The Dirac fermions in graphene, however, are subject to microscopic perturbations that include topographic corrugations and electron density inhomogeneities (i.e. charge puddles). Such perturbations profoundly alter Dirac fermion behavior, with implications for their fundamental physics as well as for future graphene device applications. Here we report a new technique of Dirac point mapping that we have used to determine the origin of charge inhomogeneities in graphene. We find that fluctuations in graphene charge density are not caused by topographical corrugations, but rather by charge-donating impurities below the graphene. These impurities induce unexpected standing wave patterns due to supposedly forbidden back-scattering of Dirac fermions. Such wave patterns can be continuously modulated by electric gating. Our observations provide new insight into impurity scattering of Dirac fermions and the microscopic mechanisms limiting electronic mobility in graphene.

cond-mat.mtrl-sci↗

arXiv2008

Giant Phonon-induced Conductance in Scanning Tunneling Spectroscopy of Gate-tunable Graphene

The honeycomb lattice of graphene is a unique two-dimensional (2D) system where the quantum mechanics of electrons is equivalent to that of relativistic Dirac fermions. Novel nanometer-scale behavior in this material, including electronic scattering, spin-based phenomena, and collective excitations, is predicted to be sensitive to charge carrier density. In order to probe local, carrier-density dependent properties in graphene we have performed atomically-resolved scanning tunneling spectroscopy measurements on mechanically cleaved graphene flake devices equipped with tunable back-gate electrodes. We observe an unexpected gap-like feature in the graphene tunneling spectrum which remains pinned to the Fermi level (E_F) regardless of graphene electron density. This gap is found to arise from a suppression of electronic tunneling to graphene states near E_F and a simultaneous giant enhancement of electronic tunneling at higher energies due to a phonon-mediated inelastic channel. Phonons thus act as a "floodgate" that controls the flow of tunneling electrons in graphene. This work reveals important new tunneling processes in gate-tunable graphitic layers.

cond-mat.mes-hall↗

arXiv2007

Scanning tunneling spectroscopy of inhomogeneous electronic structure in monolayer and bilayer graphene on SiC

We present a scanning tunneling spectroscopy (STS) study of the local electronic structure of single and bilayer graphene grown epitaxially on a SiC(0001) surface. Low voltage topographic images reveal fine, atomic-scale carbon networks, whereas higher bias images are dominated by emergent spatially inhomogeneous large-scale structure similar to a carbon-rich reconstruction of SiC(0001). STS spectroscopy shows a ~100meV gap-like feature around zero bias for both monolayer and bilayer graphene/SiC, as well as significant spatial inhomogeneity in electronic structure above the gap edge. Nanoscale structure at the SiC/graphene interface is seen to correlate with observed electronic spatial inhomogeneity. These results are important for potential devices involving electronic transport or tunneling in graphene/SiC.

cond-mat.str-el↗