arXiv subjects

Victoria Chen

Publications and source records attributed to Victoria Chen.

11 recordsLinked to original sources

arXiv2024

Direct Exfoliation of Nanoribbons from Bulk van der Waals Crystals

Confinement of monolayers into quasi-one-dimensional atomically-thin nanoribbons could lead to novel quantum phenomena beyond those achieved in their bulk and monolayer counterparts. However, current experimental availability of nanoribbon species beyond graphene has been limited to bottom-up synthesis or top-down patterning. In this study, we introduce a versatile and direct lithography-free approach to exfoliate a variety of bulk van der Waals (vdW) crystals into nanoribbons. Akin to the Scotch tape exfoliation in producing monolayers, this technique provides convenient access to a wide range of nanoribbons derived from their corresponding bulk crystals, including MoS2, WS2, MoSe2, WSe2, MoTe2, WTe2, ReS2, and hBN. The nanoribbons are single-crystalline, parallel-aligned, flat, and have high aspect ratio. We demonstrated the electrical, magnetic, and optical properties from the confinement, strain, and edge configurations of these nanoribbons. This versatile preparation technique will pave the way for future experimental investigation and broad applications in optoelectronic, sensing, electronic and quantum devices.

cond-mat.mtrl-sci↗

arXiv2023

MEMO: Dataset and Methods for Robust Multimodal Retinal Image Registration with Large or Small Vessel Density Differences

The measurement of retinal blood flow (RBF) in capillaries can provide a powerful biomarker for the early diagnosis and treatment of ocular diseases. However, no single modality can determine capillary flowrates with high precision. Combining erythrocyte-mediated angiography (EMA) with optical coherence tomography angiography (OCTA) has the potential to achieve this goal, as EMA can measure the absolute 2D RBF of retinal microvasculature and OCTA can provide the 3D structural images of capillaries. However, multimodal retinal image registration between these two modalities remains largely unexplored. To fill this gap, we establish MEMO, the first public multimodal EMA and OCTA retinal image dataset. A unique challenge in multimodal retinal image registration between these modalities is the relatively large difference in vessel density (VD). To address this challenge, we propose a segmentation-based deep-learning framework (VDD-Reg) and a new evaluation metric (MSD), which provide robust results despite differences in vessel density. VDD-Reg consists of a vessel segmentation module and a registration module. To train the vessel segmentation module, we further designed a two-stage semi-supervised learning framework (LVD-Seg) combining supervised and unsupervised losses. We demonstrate that VDD-Reg outperforms baseline methods quantitatively and qualitatively for cases of both small VD differences (using the CF-FA dataset) and large VD differences (using our MEMO dataset). Moreover, VDD-Reg requires as few as three annotated vessel segmentation masks to maintain its accuracy, demonstrating its feasibility.

eess.IV↗

arXiv2022

Imaging the electron charge density in monolayer MoS2 at the {\AA}ngstrom scale

Four-dimensional scanning transmission electron microscopy (4D-STEM) has recently gained widespread attention for its ability to image atomic electric fields with sub-{\AA}ngstrom spatial resolution. These electric field maps represent the integrated effect of the nucleus, core electrons and valence electrons, and separating their contributions is non-trivial. In this paper, we utilized simultaneously acquired 4D-STEM center of mass (CoM) images and annular dark field (ADF) images to determine the electron charge density in monolayer MoS2. We find that both the core electrons and the valence electrons contribute to the derived electron charge density. However, due to blurring by the probe shape, the valence electron contribution forms a nearly featureless background while most of the spatial modulation comes from the core electrons. Our findings highlight the importance of probe shape in interpreting charge densities derived from 4D STEM.

cond-mat.mtrl-sci↗

arXiv2021

Engineering thermal transport across layered graphene-MoS2 superlattices

Layering two-dimensional van der Waals materials provides unprecedented control over atomic placement, which could enable tailoring of vibrational spectra and heat flow at the sub-nanometer scale. Here, using spatially-resolved ultrafast thermoreflectance and spectroscopy, we uncover the design rules governing cross-plane heat transport in superlattices assembled from monolayers of graphene (G) and MoS2 (M). Using a combinatorial experimental approach, we probe nine different stacking sequences: G, GG, MG, GGG, GMG, GGMG, GMGG, GMMG, GMGMG and identify the effects of vibrational mismatch, interlayer adhesion, and junction asymmetry on thermal transport. Pure G sequences display signatures of quasi-ballistic transport, whereas adding even a single M layer strongly disrupts heat conduction. The experimental data are described well by molecular dynamics simulations which include thermal expansion, accounting for the effect of finite temperature on the interlayer spacing. The simulations show that a change of only 1.5% in the layer separation can lead to a nearly 100% increase of the thermal resistance. Using these design rules, we experimentally demonstrate a 5-layer GMGMG superlattice with an ultralow effective cross-plane thermal conductivity comparable to air, paving the way for a new class of thermal metamaterials with extreme properties.

cond-mat.mes-hall↗

arXiv2021

Lateral Transport and Field-Effect Characteristics of Sputtered P-Type Chalcogenide Thin Films

Investigating lateral electrical transport in p-type thin film chalcogenides is important to evaluate their potential for field-effect transistors (FETs) and phase-change memory applications. For instance, p-type FETs with sputtered materials at low temperature (<= 250 C) could play a role in flexible electronics or back-end-of-line (BEOL) silicon-compatible processes. Here, we explore lateral transport in chalcogenide films (Sb2Te3, Ge2Sb2Te5, Ge4Sb6Te7) and multilayers, with Hall measurements (in <= 50 nm thin films) and with p-type transistors (in <= 5 nm ultrathin films). The highest Hall mobilities are measured for Sb2Te3/GeTe superlattices (~18 cm2/V/s at room temperature), over 2-3x higher than the other films. In ultrathin p-type FETs with Ge2Sb2Te5, we achieve field-effect mobility up to ~5.5 cm2/V/s with current on/off ratio ~10000, the highest for Ge2Sb2Te5 transistors to date. We also explore process optimizations (e.g., AlOx capping layer, type of developer for lithography) and uncover their trade-offs towards the realization of p-type transistors with acceptable mobility and on/off current ratio. Our study provides essential insights into the optimization of electronic devices based on p-type chalcogenides.

cond-mat.mtrl-sci↗

arXiv2020

Application-Driven Synthesis and Characterization of Hexagonal Boron Nitride on Metal and Carbon Nanotube Substrates

Hexagonal boron nitride (h-BN) is unique among two-dimensional materials, with a large band gap (~6 eV) and high thermal conductivity (>400 W/m/K), second only to diamond among electrical insulators. Most electronic studies to date have relied on h-BN exfoliated from bulk crystals; however, for scalable applications the material must be synthesized by methods such as chemical vapor deposition (CVD). Here, we demonstrate single- and few-layer h-BN synthesized by CVD on single crystal platinum and on carbon nanotube (CNT) substrates, also comparing these films with h-BN deposited on the more commonly used polycrystalline Pt and Cu growth substrates. The h-BN film grown on single crystal Pt has a lower surface roughness and is more spatially homogeneous than the film from a polycrystalline Pt foil, and our electrochemical transfer process allows for these expensive foils to be reused with no measurable degradation. In addition, we demonstrate monolayer h-BN as an ultrathin, 3.33 $\unicode{x212B}$ barrier protecting MoS2 from damage at high temperatures and discuss other applications that take advantage of the conformal h-BN deposition on various substrates demonstrated in this work.

cond-mat.mtrl-sci↗

arXiv2020

HAVEN: A Unity-based Virtual Robot Environment to Showcase HRI-based Augmented Reality

Due to the COVID-19 pandemic, conducting Human-Robot Interaction (HRI) studies in person is not permissible due to social distancing practices to limit the spread of the virus. Therefore, a virtual reality (VR) simulation with a virtual robot may offer an alternative to real-life HRI studies. Like a real intelligent robot, a virtual robot can utilize the same advanced algorithms to behave autonomously. This paper introduces HAVEN (HRI-based Augmentation in a Virtual robot Environment using uNity), a VR simulation that enables users to interact with a virtual robot. The goal of this system design is to enable researchers to conduct HRI Augmented Reality studies using a virtual robot without being in a real environment. This framework also introduces two common HRI experiment designs: a hallway passing scenario and human-robot team object retrieval scenario. Both reflect HAVEN's potential as a tool for future AR-based HRI studies.

cs.RO↗

arXiv2020

High-Performance Flexible Nanoscale Field-Effect Transistors Based on Transition Metal Dichalcogenides

Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are good candidates for high-performance flexible electronics. However, most demonstrations of such flexible field-effect transistors (FETs) to date have been on the micron scale, not benefitting from the short-channel advantages of 2D-TMDs. Here, we demonstrate flexible monolayer MoS2 FETs with the shortest channels reported to date (down to 50 nm) and remarkably high on-current (up to 470 uA/um at 1 V drain-to-source voltage) which is comparable to flexible graphene or crystalline silicon FETs. This is achieved using a new transfer method wherein contacts are initially patterned on the rigid TMD growth substrate with nanoscale lithography, then coated with a polyimide (PI) film which becomes the flexible substrate after release, with the contacts and TMD. We also apply this transfer process to other TMDs, reporting the first flexible FETs with MoSe2 and record on-current for flexible WSe2 FETs. These achievements push 2D semiconductors closer to a technology for low-power and high-performance flexible electronics.

cond-mat.mtrl-sci↗

arXiv2020

Ultrahigh Doping of Graphene Using Flame-Deposited MoO3

The expected high performance of graphene-based electronics is often hindered by lack of adequate doping, which causes low carrier density and large sheet resistance. Many reported graphene doping schemes also suffer from instability or incompatibility with existing semiconductor processing. Here we report ultrahigh and stable p-type doping up to ~7x10^13 1/cm^2 (~2x10^21 1/cm^3}) of monolayer graphene grown by chemical vapor deposition. This is achieved by direct polycrystalline MoO3 growth on graphene using a rapid flame synthesis technique. With this approach, the metal-graphene contact resistance for holes is reduced to ~200 Ohm-um. We also demonstrate that flame-deposited MoO3 provides over 5x higher doping of graphene, as well as superior thermal and long-term stability, compared to electron-beam deposited MoO3.

cond-mat.mes-hall↗

arXiv2019

High-dimensional Black-box Optimization Under Uncertainty

Optimizing expensive black-box systems with limited data is an extremely challenging problem. As a resolution, we present a new surrogate optimization approach by addressing two gaps in prior research -- unimportant input variables and inefficient treatment of uncertainty associated with the black-box output. We first design a new flexible non-interpolating parsimonious surrogate model using a partitioning-based multivariate adaptive regression splines approach, Tree Knot MARS (TK-MARS). The proposed model is specifically designed for optimization by capturing the structure of the function, bending at near-optimal locations, and is capable of screening unimportant input variables. Furthermore, we develop a novel replication approach called \emph{Smart-Replication}, to overcome the uncertainty associated with the black-box output. The Smart-Replication approach identifies promising input points to replicate and avoids unnecessary evaluations of other data points. Smart-Replication is agnostic to the choice of a surrogate and can adapt itself to an unknown noise level. Finally to demonstrate the effectiveness of our proposed approaches we consider different complex global optimization test functions from the surrogate optimization literature. The results indicate that TK-MARS outperforms original MARS within a surrogate optimization algorithm and successfully detects important variables. The results also show that although non-interpolating surrogates can mitigate uncertainty, replication is still beneficial for optimizing highly complex black-box functions. The robustness and the quality of the final optimum solution found through Smart-Replication are competitive with that using no replications in environments with low levels of noise and using a fixed number of replications in highly noisy environments.

math.OC↗

arXiv2019

Contact Engineering High Performance n-Type MoTe2 Transistors

Semiconducting MoTe2 is one of the few two-dimensional (2D) materials with a moderate band gap, similar to silicon. However, this material remains under-explored for 2D electronics due to ambient instability and predominantly p-type Fermi level pinning at contacts. Here, we demonstrate unipolar n-type MoTe2 transistors with the highest performance to date, including high saturation current (>400 ${\mu}A/{\mu}m$ at 80 K and >200 ${\mu}A/{\mu}m$ at 300 K) and relatively low contact resistance (1.2 to 2 $k{\Omega}\cdot{\mu}m$ from 80 to 300 K), achieved with Ag contacts and AlOx encapsulation. We also investigate other contact metals, extracting their Schottky barrier heights using an analytic subthreshold model. High-resolution X-ray photoelectron spectroscopy reveals that interfacial metal-Te compounds dominate the contact resistance. Among the metals studied, Sc has the lowest work function but is the most reactive, which we counter by inserting monolayer h-BN between MoTe2 and Sc. These metal-insulator-semiconductor (MIS) contacts partly de-pin the metal Fermi level and lead to the smallest Schottky barrier for electron injection. Overall, this work improves our understanding of n-type contacts to 2D materials, an important advance for low-power electronics.

physics.app-ph↗