arXiv subjects

Vidya Madhavan

Publications and source records attributed to Vidya Madhavan.

53 records · Page 3Linked to original sources

arXiv2019

Doping induced Mott collapse and the density wave instabilities in (Sr$_{1-x}$La$_x$)$_3$Ir$_2$O$_7$

The path from a Mott insulating phase to high temperature superconductivity encounters a rich set of unconventional phenomena involving the insulator-to-metal transition (IMT) such as emergent electronic orders and pseudogaps that ultimately affect the condensation of Cooper pairs. A huge hindrance to understanding the origin of these phenomena in the curates is the difficulty in accessing doping levels near the parent state. Recently, the J$_{eff}$=1/2 Mott state of the perovskite strontium iridates has revealed intriguing parallels to the cuprates, with the advantage that it provides unique access to the Mott transition. Here, we exploit this accessibility to study the IMT and the possible nearby electronic orders in the electron-doped bilayer iridate (Sr$_{1-x}$La$_x$)$_3$Ir$_2$O$_7$. Using spectroscopic imaging scanning tunneling microscopy, we image the La dopants in the top as well as the interlayer SrO planes. Surprisingly, we find a disproportionate distribution of La in these layers with the interlayer La being primarily responsible for the IMT, thereby revealing the distinct site-dependent effects of dopants on the electronic properties of bilayer systems. Furthermore, we discover the coexistence of two electronic orders generated by electron doping: a unidirectional electronic order with a concomitant structural distortion; and local resonant states forming a checkerboard-like pattern trapped by La. This provides evidence that multiple charge orders may exist simultaneously in Mott systems, even with only one band crossing the Fermi energy.

cond-mat.str-el↗

arXiv2019

Topological nature of step edge states on the surface of topological crystalline insulator Pb$_{0.7}$Sn$_{0.3}$Se

In addition to novel surface states, topological insulators can also exhibit robust gapless states at crystalline defects. Step edges constitute a class of common defects on the surface of crystals. In this work we establish the topological nature of one-dimensional (1D) bound states localized at step edges of the [001] surface of a topological crystalline insulator (TCI) Pb$_{0.7}$Sn$_{0.3}$Se, both theoretically and experimentally. We show that the topological stability of the step edge states arises from an emergent particle-hole symmetry of the surface low-energy physics, and demonstrate the experimental signatures of the particle-hole symmetry breaking. We also reveal the effects of an external magnetic field on the 1D bound states. Our work suggests the possibility of similar topological step edge modes in other topological materials with a rocks-salt structure.

cond-mat.str-el↗

arXiv2018

Disorder induced power-law gaps in an insulator-metal Mott transition

A correlated material in the vicinity of an insulator-metal transition (IMT) exhibits rich phenomenology and variety of interesting phases. A common avenue to induce IMTs in Mott insulators is doping, which inevitably leads to disorder. While disorder is well known to create electronic inhomogeneity, recent theoretical studies have indicated that it may play an unexpected and much more profound role in controlling the properties of Mott systems. Theory predicts that disorder might play a role in driving a Mott insulator across an IMT, with the emergent metallic state hosting a power law suppression of the density of states (with exponent close to 1; V-shaped gap) centered at the Fermi energy. Such V-shaped gaps have been observed in Mott systems but their origins are as yet unknown. To investigate this, we use scanning tunneling microscopy and spectroscopy to study isovalent Ru substitutions in Sr$_3$(Ir$_{1-x}$Ru$_x$)$_2$O$_7$ which drives the system into an antiferromagnetic, metallic state. Our experiments reveal that many core features of the IMT such as power law density of states, pinning of the Fermi energy with increasing disorder, and persistence of antiferromagnetism can be understood as universal features of a disordered Mott system near an IMT and suggest that V-shaped gaps may be an inevitable consequence of disorder in doped Mott insulators.

cond-mat.str-el↗

arXiv2018

Searching for topological Fermi arcs via quasiparticle interference on a type-II Weyl semimetal MoTe$_2$

Weyl semimetals display a novel topological phase of matter where the Weyl nodes emerge in pairs of opposite chirality and can be seen as either a source or a sink of Berry curvature. The exotic effects in Weyl semimetals, such as surface Fermi arcs and the chiral anomaly, make them a new playground for exploring novel functionalities. Further exploiting their potential applications requires clear understanding of their topological electronic properties, such as Weyl points and Fermi arcs. Here we report a Fourier transform scanning tunneling spectroscopy (FT-STS) study on a type-II Weyl semimetal candidate MoTe$_2$ whose Weyl points are predicated to be located above Fermi level. Although its electronic structure below the Fermi level have been identified by angle resolved photo emission spectroscopy (ARPES), by comparing our experimental data with first-principles calculations, we are able to identify the origins of the multiple scattering channels at energies both below and above Fermi level. Our calculations also show the existence of both trivial and topological arc like states above the Fermi energy. In the FT-STS experiments, we have observed strong signals from intra-arc scatterings as well as from the scattering between the arc-like surface states and the projected bulk states. A detailed comparison between our experimental observations and calculated results reveals the trivial and non-trivial scattering channels are difficult to distinguish in this compound. Interestingly, we find that the broken inversion symmetry changes the terminating states on the two inequivalent surfaces, which in turn changes the relative strength of the scattering channels observed in the FT-STS images on the two surfaces.

cond-mat.mtrl-sci↗

arXiv2017

Defect Role in the Carrier Tunable Topological Insulator (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ Thin Films

Alloys of Bi$_2$Te$_3$ and Sb$_2$Te$_3$ ((Bi$_{1-x}$Sb$_x$)$_2$Te$_3$) have played an essential role in the exploration of topological surface states, allowing us to study phenomena that would otherwise be obscured by bulk contributions to conductivity. Thin films of these alloys have been particularly important for tuning the energy of the Fermi level, a key step in observing spin-polarized surface currents and the quantum anomalous Hall effect. Previous studies reported the chemical tuning of the Fermi level to the Dirac point by controlling the Sb:Bi composition ratio, but the optimum ratio varies widely across various studies with no consensus. In this work, we use scanning tunneling microscopy and Landau level spectroscopy, in combination with X-ray photoemission spectroscopy to isolate the effects of growth factors such as temperature and composition, and to provide a microscopic picture of the role that disorder and composition play in determining the carrier density of epitaxially grown (Bi,Sb)$_2$Te$_3$ thin films. Using Landau level spectroscopy, we determine that the ideal Sb concentration to place the Fermi energy to within a few meV of the Dirac point is $x\sim 0.7$. However, we find that the post- growth annealing temperature can have a drastic impact on microscopic structure as well as carrier density. In particular, we find that when films are post-growth annealed at high temperature, better crystallinity and surface roughness are achieved; but this also produces a larger Te defect density, adding n-type carriers. This work provides key information necessary for optimizing thin film quality in this fundamentally and technologically important class of materials.

cond-mat.mtrl-sci↗

arXiv2017

Influence of domain walls in the incommensurate charge density wave state of Cu intercalated 1$T$-TiSe$_2$

We report a low-temperature scanning tunneling microscopy study of the charge density wave (CDW) order in 1$T$-TiSe$_2$ and Cu$_{0.08}$TiSe$_2$. In pristine 1$T$-TiSe$_2$ we observe a long-range coherent commensurate CDW (C-CDW) order. In contrast, Cu$_{0.08}$TiSe$_{2}$ displays an incommensurate CDW (I-CDW) phase with localized C-CDW domains separated by domain walls. Density of states measurements indicate that the domain walls host an extra population of fermions near the Fermi level which may play a role in the emergence of superconductivity in this system. Fourier transform scanning tunneling spectroscopy studies suggest that the dominant mechanism for CDW formation in the I-CDW phase may be electron-phonon coupling.

cond-mat.supr-con↗

arXiv2017

Quasiparticle Interference and Strong Electron-Mode Coupling in the Quasi-One-Dimensional Bands of Sr$_2$RuO$_4$

The single-layered ruthenate Sr$_2$RuO$_4$ has attracted a great deal of interest as a spin-triplet superconductor with an order parameter that may potentially break time reversal invariance and host half-quantized vortices with Majorana zero modes. While the actual nature of the superconducting state is still a matter of controversy, it has long been believed that it condenses from a metallic state that is well described by a conventional Fermi liquid. In this work we use a combination of Fourier transform scanning tunneling spectroscopy (FT-STS) and momentum resolved electron energy loss spectroscopy (M-EELS) to probe interaction effects in the normal state of Sr$_2$RuO$_4$. Our high-resolution FT-STS data show signatures of the β-band with a distinctly quasi-one-dimensional (1D) character. The band dispersion reveals surprisingly strong interaction effects that dramatically renormalize the Fermi velocity, suggesting that the normal state of Sr$_2$RuO$_4$ is that of a 'correlated metal' where correlations are strengthened by the quasi 1D nature of the bands. In addition, kinks at energies of approximately 10meV, 38meV and 70meV are observed. By comparing STM and M-EELS data we show that the two higher energy features arise from coupling with collective modes. The strong correlation effects and the kinks in the quasi 1D bands may provide important information for understanding the superconducting state. This work opens up a unique approach to revealing the superconducting order parameter in this compound.

cond-mat.str-el↗

arXiv2016

Interplay of orbital effects and nanoscale strain in topological crystalline insulators

Orbital degrees of freedom can have pronounced effects on the fundamental properties of electrons in solids. In addition to influencing bandwidths, gaps, correlation strength and dispersion, orbital effects have also been implicated in generating novel electronic and structural phases, such as Jahn-Teller effect and colossal magnetoresistance. In this work, we show for the first time how the orbital nature of bands can result in non-trivial effects of strain on the band structure. We use scanning tunneling microscopy and quasiparticle interference imaging to study the effects of strain on the electronic structure of a heteroepitaxial thin film of a topological crystalline insulator, SnTe. We find a surprising effect where strain applied in one direction affects the band structure in the perpendicular direction. Our theoretical calculations indicate that this effect directly arises from the orbital nature of the conduction and valance bands. Our results imply that a microscopic model capturing strain effects on the band structure must include a consideration of the orbital nature of the bands.

cond-mat.mes-hall↗

arXiv2015

The influence of electron-doping on the ground state of (Sr{1-x}La{x})2IrO4

The evolution of the electronic properties of electron-doped (Sr{1-x}La{x})2IrO4 is experimentally explored as the doping limit of La is approached. As electrons are introduced, the electronic ground state transitions from a spin-orbit Mott phase into an electronically phase separated state, where long-range magnetic order vanishes beyond x = 0.02 and charge transport remains percolative up to the limit of La substitution (x~0.06). In particular, the electronic ground state remains inhomogeneous even beyond the collapse of the parent state's long-range antiferromagnetic order, while persistent short-range magnetism survives up to the highest La-substitution levels. Furthermore, as electrons are doped into Sr2IrO4, we observe the appearance of a low temperature magnetic glass-like state intermediate to the complete suppression of antiferromagnetic order. Universalities and differences in the electron-doped phase diagrams of single layer and bilayer Ruddlesden-Popper strontium iridates are discussed.

cond-mat.str-el↗

arXiv2015

First-order melting of a weak spin-orbit Mott insulator into a correlated metal

The electronic phase diagram of the weak spin-orbit Mott insulator (Sr(1-x)Lax)3Ir2O7 is determined via an exhaustive experimental study. Upon doping electrons via La substitution, an immediate collapse in resistivity occurs along with a narrow regime of nanoscale phase separation comprised of antiferromagnetic, insulating regions and paramagnetic, metallic puddles persisting until x~0.04. Continued electron doping results in an abrupt, first-order phase boundary where the Neel state is suppressed and a homogenous, correlated, metallic state appears with an enhanced spin susceptibility and local moments. As the metallic state is stabilized, a weak structural distortion develops and suggests a competing instability with the parent spin-orbit Mott state.

cond-mat.str-el↗

arXiv2015

Nanoscale Determination of the Mass Enhancement Factor in the Lightly-Doped Bulk Insulator Lead Selenide

Bismuth chalcogenides and lead telluride/selenide alloys exhibit exceptional thermoelectric properties which could be harnessed for power generation and device applications. Since phonons play a significant role in achieving these desired properties, quantifying the interaction between phonons and electrons, which is encoded in the Eliashberg function of a material, is of immense importance. However, its precise extraction has in part been limited due to the lack of local experimental probes. Here we construct a method to directly extract the Eliashberg function using Landau level spectroscopy, and demonstrate its applicability to lightly-doped thermoelectric bulk insulator PbSe. In addition to its high energy resolution only limited by thermal broadening, this novel experimental method could be used to detect variations in mass enhancement factor at the nanoscale. As such, it opens up a new pathway for investigating the effects of chemical defects, surface doping and strain on the mass enhancement factor.

cond-mat.mtrl-sci↗

arXiv2015

Strain engineering Dirac surface states in heteroepitaxial topological crystalline insulator thin films

In newly discovered topological crystalline insulators (TCIs), the unique crystalline protection of the surface state (SS) band structure has led to a series of intriguing predictions of strain generated phenomena, from the appearance of pseudo-magnetic fields and helical flat bands, to the tunability of the Dirac SS by strain that may be used to construct "straintronic" nanoswitches. However, practical realization of this exotic phenomenology via strain engineering is experimentally challenging and is yet to be achieved. In this work, we have designed an experiment to not only generate and measure strain locally, but to also directly measure the resulting effects on the Dirac SS. We grow heteroepitaxial thin films of TCI SnTe in-situ and measure them by using high-resolution scanning tunneling microscopy (STM). Large STM images were analyzed to determine picoscale changes in the atomic positions which reveal regions of both tensile and compressive strain. Simultaneous Fourier-transform STM was then used to determine the effects of strain on the Dirac electrons. We find that strain continuously tunes the momentum space position of the Dirac points, consistent with theoretical predictions. Our work demonstrates the fundamental mechanism necessary for using TCIs in strain-based applications, and establishes these systems as highly tunable platforms for nanodevices.

cond-mat.mes-hall↗

arXiv2014

Dirac mass generation from crystal symmetry breaking on the surfaces of topological crystalline insulators

The tunability of topological surface states (SS) and controllable opening of the Dirac gap are of fundamental and practical interest in the field of topological materials. In topological crystalline insulators (TCIs), a spontaneously generated Dirac gap was recently observed, which was ascribed to broken cubic crystal symmetry. However, this structural distortion has not been directly observed so far, and the microscopic mechanism of Dirac gap opening via crystal symmetry breaking remains elusive. In this work, we present scanning tunneling microscopy (STM) measurements of a TCI Pb$_{1-x}$Sn$_x$Se for a wide range of alloy compositions spanning the topological and non-topological regimes. STM topographies directly reveal a symmetry-breaking distortion on the surface, which imparts mass to the otherwise massless Dirac electrons - a mechanism analogous to the long sought-after Higgs mechanism in particle physics. Remarkably, our measurements show that the Dirac gap scales with alloy composition, while the magnitude of the distortion remains nearly constant. Based on theoretical calculations, we find the Dirac mass is controlled by the composition-dependent SS penetration depth, which determines the weight of SS in the distorted region that is confined to the surface. Finally, we discover the existence of SS in the non-topological regime, which have the characteristics of gapped, double-branched Dirac fermions.

cond-mat.mes-hall↗

arXiv2014

Carrier localization and electronic phase separation in a doped spin-orbit driven Mott phase in Sr3(Ir1-xRux)2O7

Interest in many strongly spin-orbit coupled 5d-transition metal oxide insulators stems from mapping their electronic structures to a J=1/2 Mott phase. One of the hopes is to establish their Mott parent states and explore these systems' potential of realizing novel electronic states upon carrier doping. However, once doped, little is understood regarding the role of their reduced Coulomb interaction U relative to their strongly correlated 3d-electron cousins. Here we show that, upon hole-doping a candidate J=1/2 Mott insulator, carriers remain localized within a nanoscale phase separated ground state. A percolative metal-insulator transition occurs with interplay between localized and itinerant regions, stabilizing an antiferromagnetic metallic phase beyond the critical region. Our results demonstrate a surprising parallel between doped 5d- and 3d-electron Mott systems and suggest either through the near degeneracy of nearby electronic phases or direct carrier localization that U is essential to the carrier response of this doped spin-orbit Mott insulator.

cond-mat.str-el↗

arXiv2013

Mapping the unconventional orbital texture in topological crystalline insulators

The newly discovered topological crystalline insulators (TCIs) harbor a complex band structure involving multiple Dirac cones. These materials are potentially highly tunable by external electric field, temperature or strain and could find future applications in field-effect transistors, photodetectors, and nano-mechanical systems. Theoretically, it has been predicted that different Dirac cones, offset in energy and momentum-space, might harbor vastly different orbital character, a unique property which if experimentally realized, would present an ideal platform for accomplishing new spintronic devices. However, the orbital texture of the Dirac cones, which is of immense importance in determining a variety of materials properties, still remains elusive in TCIs. Here, we unveil the orbital texture in a prototypical TCI Pb$_{1-x}$Sn$_x$Se. By using Fourier-transform (FT) scanning tunneling spectroscopy (STS) we measure the interference patterns produced by the scattering of surface state electrons. We discover that the intensity and energy dependences of FTs show distinct characteristics, which can directly be attributed to orbital effects. Our experiments reveal the complex band topology involving two Lifshitz transitions and establish the orbital nature of the Dirac bands in this new class of topological materials, which could provide a different pathway towards future quantum applications.

cond-mat.str-el↗

arXiv2013

Observation of Dirac node formation and mass acquisition in a topological crystalline insulator

In the recently discovered topological crystalline insulators (TCIs), topology and crystal symmetry intertwine to create surface states with a unique set of characteristics. Among the theoretical predictions for TCIs is the possibility of imparting mass to the massless Dirac fermions by breaking crystal symmetry, as well as a Lifshitz transition with a change of Fermi surface topology. Here we report high resolution scanning tunneling microscopy studies of a TCI, Pb1-xSnxSe. We demonstrate the formation of zero mass Dirac fermions protected by crystal symmetry and the mechanism of mass generation via symmetry breaking, which constitute the defining characteristics of TCIs. In addition, we show two distinct regimes of fermiology separated by a Van-Hove singularity at the Lifshitz transition point. Our work paves the way for engineering the Dirac band gap and realizing interaction-driven topological quantum phenomena in TCIs.

cond-mat.mes-hall↗

arXiv2013

Imaging the evolution of metallic states in a spin-orbit interaction driven correlated iridate

The Ruddlesden-Popper (RP) series of iridates (Srn+1IrnO3n+1) have been the subject of much recent attention due to the anticipation of emergent physics arising from the cooperative action of spin-orbit (SO) driven band splitting and Coulomb interactions[1-3]. However an ongoing debate over the role of correlations in the formation of the charge gap and a lack of understanding of the effects of doping on the low energy electronic structure have hindered experimental progress in realizing many of the predicted states[4-8] including possible high-Tc superconductivity[7,9]. Using scanning tunneling spectroscopy we map out the spatially resolved density of states in the n=2 RP member, Sr3Ir2O7 (Ir327). We show that the Ir327 parent compound, argued to exist only as a weakly correlated band insulator in fact possesses a substantial ~130meV charge excitation gap driven by an interplay between structure, SO coupling and correlations. A critical component in distinguishing the intrinsic electronic character within the inhomogeneous textured electronic structure is our identification of the signature of missing apical oxygen defects, which play a critical role in many of the layered oxides. Our measurements combined with insights from calculations reveal how apical oxygen vacancies transfer spectral weight from higher energies to the gap energies thereby revealing a path toward obtaining metallic electronic states from the parent-insulating states in the iridates.

cond-mat.mtrl-sci↗