arXiv subjects

Viet Hung Nguyen

Publications and source records attributed to Viet Hung Nguyen.

At least 19 recordsLinked to original sources

arXiv2019

Selfish Mining in Proof-of-Work Blockchain with Multiple Miners: An Empirical Evaluation

Proof-of-Work blockchain, despite its numerous benefits, is still not an entirely secure technology due to the existence of Selfish Mining (SM) strategies that can disrupt the system and its mining economy. While the effect of SM has been studied mostly in a two-miners scenario, it has not been investigated in a more practical context where there are multiple malicious miners individually performing SM. To fill this gap, we carry out an empirical study that separately accounts for different numbers of SM miners (who always perform SM) and strategic miners (who choose either SM or Nakamoto's mining protocol depending on which maximises their individual mining reward). Our result shows that SM is generally more effective as the number of SM miners increases, however its effectiveness does not vary in the presence of a large number of strategic miners. Under specific mining power distributions, we also demonstrate that multiple miners can perform SM and simultaneously gain higher mining rewards than they should. Surprisingly, we also show that the more strategic miners there are, the more robust the systems become. Since blockchain miners should naturally be seen as self-interested strategic miners, our findings encourage blockchain system developers and engineers to attract as many miners as possible to prevent SM and similar behaviour.

cs.CR↗

arXiv2019

Aharonov-Bohm interferences in polycrystalline graphene

Aharonov-Bohm (AB) interferences in the quantum Hall regime can be achieved, provided that electrons are able to transmit between two edge channels in nanostructures. Pioneering approaches include quantum point contacts in 2DEG systems, bipolar graphene p-n junctions, and magnetic field heterostructures. In this work, defect scattering is proposed as an alternative mechanism to achieve AB interferences in polycrystalline graphene. Indeed, due to such scattering, the extended defects across the sample can act as tunneling paths connecting quantum Hall edge channels. Consequently, strong AB oscillations in the conductance are predicted in polycrystalline graphene systems with two parallel grain boundaries. In addition, this general approach is demonstrated to be applicable to nano-systems containing two graphene barriers with functional impurities and perspectively, can also be extended to similar systems of 2D materials beyond graphene.

cond-mat.mes-hall↗

arXiv2019

Stepped Graphene-based Aharonov-Bohm Interferometers

Aharonov-Bohm interferences in the quantum Hall regime are observed when electrons are transmitted between two edge channels. Such a phenomenon has been realized in 2D systems such as quantum point contacts, anti-dots and p-n junctions. Based on a theoretical investigation of the magnetotransport in stepped graphene, a new kind of Aharonov-Bohm interferometers is proposed herewith. Indeed, when a strong magnetic field is applied in a proper direction, oppositely propagating edge states can be achieved in both terrace and facet zones of the step, leading to the interedge scatterings and hence strong Aharonov-Bohm oscillations in the conductance in the quantum Hall regime. Taking place in the unipolar regime, this interference is also predicted in stepped systems of other 2D layered materials.

cond-mat.mes-hall↗

arXiv2018

Klein tunneling and electron optics in Dirac-Weyl fermion systems with tilted energy dispersion

The outstanding electronic properties of relativistic-like fermions have been extensively studied in solid state systems with isotropic linear dispersions such as graphene. Here, we show that 2D and 3D Dirac-Weyl (DW) materials exhibiting tilted energy dispersions could induce drastically different transport phenomena, compared to the non-tilted case. Indeed, the Klein tunneling of DW fermions of opposite chiralities is predicted to appear along two separated oblique directions. In addition, valley filtering and beam splitting effects are easily tailored by dopant engineering techniques while the refraction of electron waves is dramatically modified by the tilt, thus paving the way for emerging applications in electron optics and valleytronics.

cond-mat.mes-hall↗

arXiv2018

An Efficient Primal-Dual Algorithm for Fair Combinatorial Optimization Problems

We consider a general class of combinatorial optimization problems including among others allocation, multiple knapsack, matching or travelling salesman problems. The standard version of those problems is the maximum weight optimization problem where a sum of values is optimized. However, the sum is not a good aggregation function when the fairness of the distribution of those values (corresponding for example to different agents' utilities or criteria) is important. In this paper, using the generalized Gini index (GGI), a well-known inequality measure, instead of the sum to model fairness, we formulate a new general problem, that we call fair combinatorial optimization. Although GGI is a non-linear aggregating function, a $0,1$-linear program (IP) can be formulated for finding a GGI-optimal solution by exploiting a linearization of GGI proposed by Ogryczak and Sliwinski. However, the time spent by commercial solvers (e.g., CPLEX, Gurobi...) for solving (IP) increases very quickly with instances' size and can reach hours even for relatively small-sized ones. As a faster alternative, we propose a heuristic for solving (IP) based on a primal-dual approach using Lagrangian decomposition. %We experimentally evaluate our methods against the exact solution of (IP) by CPLEX on several fair optimization problems related to matching to demonstrate the efficiency of our proposition. We demonstrate the efficiency of our method by evaluating it against the exact solution of (IP) by CPLEX on several fair optimization problems related to matching. The numerical results show that our method outputs in a very short time efficient solutions giving lower bounds that CPLEX may take several orders of magnitude longer to obtain. Moreover, for instances for which we know the optimal value, these solutions are quasi-optimal with optimality gap less than 0.3%.

cs.DS↗

arXiv2016

Optical Hall effect in strained graphene

When passing an optical medium in the presence of a magnetic field, the polarization of light can be rotated either when reflected at the surface (Kerr effect) or when transmitted through the material (Faraday rotation). This phenomenon is a direct consequence of the optical Hall effect arising from the light-charge carrier interaction in solid state systems subjected to an external magnetic field, in analogy with the conventional Hall effect. The optical Hall effect has been explored in many thin films and also more recently in 2D layered materials. Here, an alternative approach based on strain engineering is proposed to achieve an optical Hall conductivity in graphene without magnetic field. Indeed, strain induces lattice symmetry breaking and hence can result in a finite optical Hall conductivity. First-principles calculations also predict this strain-induced optical Hall effect in other 2D materials. Combining with the possibility of tuning the light energy and polarization, the strain amplitude and direction, and the nature of the optical medium, large ranges of positive and negative optical Hall conductivities are predicted, thus opening the way to use these atomistic thin materials in novel specific opto-electro-mechanical devices.

cond-mat.mes-hall↗

arXiv2016

Valley filtering and electronic optics using polycrystalline graphene

In this Letter, both the manipulation of valley-polarized currents and the optical-like behaviors of Dirac fermions are theoretically explored in polycrystalline graphene. When strain is applied, the misorientation between two graphene domains separated by a grain boundary can result in a mismatch of their electronic structures. Such a discrepancy manifests itself in a strong breaking of the inversion symmetry, leading to perfect valley polarization in a wide range of transmission directions. In addition, these graphene domains act as different media for electron waves, offering the possibility to modulate and obtain negative refraction indexes.

cond-mat.mes-hall↗

arXiv2016

Comment on arXiv:0709.3700 "Orientation dependence of the optical spectra in graphene at high frequencies"

Zhang et al. reported in [Phys. Rev. B 77, 241402(R) (2008)] a theoretical study of the optical spectra of monolayer graphene employing the Kubo formula within a tight-binding model. Their calculations predicted that at high frequencies the optical conductivity of graphene becomes strongly anisotropic. In particular, at frequencies comparable to the energy separation of the upper and lower bands at the $Γ$-point, the optical conductivity is strongly suppressed if the field polarization is along the zigzag direction while it is significantly high for the armchair one. We find that, unfortunately, this result is just a consequence of the incorrect determination of the current operator in k-space. Here, we present the standard scheme to obtain this operator correctly. As a result, we show that the optical conductivity of monolayer graphene is indeed isotropic, which is consistent with the results of other (both theoretical and experimental) studies in the literature.

cond-mat.mes-hall↗

arXiv2016

Transport properties through graphene grain boundaries: strain effects versus lattice symmetry

As most materials available in macroscopic quantities, graphene appears in a polycrystalline form and thus contains grain boundaries. In the present work, the effect of uniaxial strain on the electronic transport properties through graphene grain boundaries is investigated using atomistic simulations. A systematic picture of the transport properties with respect to the strain and the lattice symmetry of graphene domains on both sides of the boundary is provided. In particular, it is shown that the strain engineering can be used to open a finite transport gap in all graphene systems where two domains exhibit different orientations. This gap value is found to depend on the strain magnitude, on the strain direction and on the lattice symmetry of graphene domains. By choosing appropriately the strain direction, a large transport gap of a few hundred meV can be achieved when applying a small strain of only a few percents. For a specific class of graphene grain boundary systems, the strain engineering can also be used to reduce the scattering on defects and hence to significantly enhance the conductance. With a large strain-induced gap, these graphene heterostructures are proposed to be possible candidates for highly sensitive strain sensors, flexible transistors and p-n junctions with a strong non-linear I-V characteristics.

cond-mat.mes-hall↗

arXiv2015

Enhanced Seebeck effect in graphene devices by strain and doping engineering

In this work, we investigate the possibility of enhancing the thermoelectric power (Seebeck coefficient) in graphene devices by strain and doping engineering. While a local strain can result in the misalignment of Dirac cones of different graphene sections in the k-space, doping engineering leads to their displacement in energy. By combining these two effects, we demonstrate that a conduction gap as large as a few hundreds meV can be achieved and hence the enhanced Seebeck coefficient can reach a value higher than 1.4 mV/K in graphene doped heterojunctions with a locally strained area. Such hetero-channels appear to be very promising for enlarging the applications of graphene devices as in strain and thermal sensors.

cond-mat.mtrl-sci↗

arXiv2015

Transport gap in vertical devices made of incommensurately misoriented graphene layers

By means of atomistic tight-binding calculations, we investigate the transport properties of vertical devices made of two incommensurately misoriented graphene layers. With a chosen transport direction (Ox-axis), we define two classes of rotated graphene lattice distinguished by the different properties of their lattice symmetry and, hence, Brillouin zone, i.e., the two Dirac cones are located either at the same $k_y$-point ($K_y' = K_y = 0$) or at different $k_y$-points ($K_y' = -K_y = 2π/3L_y$, where $L_y$ is the periodic length along the Oy axis). As a consequence, a misalignment of Dirac cones of two layers occurs and a significant energy-gap ($\sim$ a few hundreds of meV) of transmission is achieved in devices made of two layers of different lattice classes. We also shown that strain engineering can be used to strongly enlarge the gap in this type of device.

cond-mat.mes-hall↗

arXiv2014

Strain-induced modulation of Dirac cones and van Hove singularities in twisted graphene bilayer

By means of atomistic tight-binding calculations, we investigate the effects of uniaxial strain on the electronic bandstructure of twisted graphene bilayer. We find that the bandstructure is dramatically deformed and the degeneracy of the bands is broken by strain. As a conseqence, the number of Dirac cones can double and the van Hove singularity points are separated in energy. The dependence of these effects on the strength of strain, its applied direction and the twist angle is carefully clarified. As an important result, we demonstrate that the position of van Hove singularities can be modulated by strain, suggesting the possibility of observing this phenomenon at low energy in a large range of twist angle (i.e., larger than $10^\circ$). Unfortunately, these interesting/important phenomena have not been clarified in the previous works based on the continuum approximation. While they are in good agreement with available experiments, our results provide a detailed understanding of the strain effects on the electronic properties and may motivate other investigations of electronic transport in this type of graphene lattice.

cond-mat.mes-hall↗

arXiv2014

Strain-induced conduction gap in vertical devices made of twisted graphene layers

We investigate the effects of uniaxial strain on the transport properties of vertical devices made of two twisted graphene layers, which partially overlap each other. We find that because of the different orientations of the two graphene lattices, their Dirac points can be displaced and separated in the $k-$space by the effects of strain. Hence, a finite conduction gap as large as a few hundred meV can be obtained in the device with a small strain of only a few percent. The dependence of this conduction gap on the strain strength, strain direction, transport direction and twist angle are clarified and presented. On this basis, the strong modulation of conductance and significant improvement of Seebeck coefficient are shown. The suggested devices therefore may be very promising for improving applications of graphene, e.g., as transistors or strain and thermal sensors.

cond-mat.mes-hall↗

arXiv2014

Conduction gap in graphene strain junctions: direction dependence

It has been shown in a recent study [Nguyen et al., Nanotechnol. \textbf{25}, 165201 (2014)] that unstrained/strained graphene junctions are promising candidates to improve the performance of graphene transistors that is usually hindered by the gapless nature of graphene. Although the energy bandgap of strained graphene still remains zero, the shift of Dirac points in the \textbf{\emph{k}}-space due to strain-induced deformation of graphene lattice can lead to the appearance of a finite conduction gap of several hundreds meV in strained junctions with a strain of only a few percent. However, since it depends essentially on the magnitude of Dirac point shift, this conduction gap strongly depends on the direction of applied strain and the transport direction. In this work, a systematic study of conduction gap properties with respect to these quantities is presented and the results are carefully analyzed. Our study provides useful information for further investigations to exploit graphene strained junctions in electronic applications.

cond-mat.mes-hall↗

arXiv2013

Improved performance of graphene transistors by strain engineering

By means of numerical simulation, we study in this work the effects of uniaxial strain on transport properties of strained graphene heterojunctions and explore the possibility to achieve good performance of graphene transistors using these hetero-channels. It is shown that a finite conduction-gap can open in the strain junctions due to the strain-induced deformation of graphene bandstructure. These hetero-channels are then demonstrated to improve significantly the operation of graphene field-effect-transistors (FETs). In particular, ON/OFF current ratio can reach a value of over 10$^5$. In graphene normal FETs, transconductance, though reduced compared to the case of unstrained devices, is still high while good saturation of current can be obtained. This results in high voltage gain and high transition frequency of a few hundreds of GHz for a gate length of 80 nm. In graphene tunneling FETs, subthreshold swing lower than 30 mV/dec, strong non-linear effects such as gate controllable negative differential conductance, and current rectification are observed.

cond-mat.mes-hall↗

arXiv2013

A Systematically Empirical Evaluation of Vulnerability Discovery Models: a Study on Browsers' Vulnerabilities

A precise vulnerability discovery model (VDM) will provide a useful insight to assess software security, and could be a good prediction instrument for both software vendors and users to understand security trends and plan ahead patching schedule accordingly. Thus far, several models have been proposed and validated. Yet, no systematically independent validation by somebody other than the author exists. Furthermore, there are a number of issues that might bias previous studies in the field. In this work, we fill in the gap by introducing an empirical methodology that systematically evaluates the performance of a VDM in two aspects: quality and predictability. We further apply this methodology to assess existing VDMs. The results show that some models should be rejected outright, while some others might be adequate to capture the discovery process of vulnerabilities. We also consider different usage scenarios of VDMs and find that the simplest linear model is the most appropriate choice in terms of both quality and predictability when browsers are young. Otherwise, logistics-based models are better choices.

cs.CR↗

arXiv2013

The (Un)Reliability of NVD Vulnerable Versions Data: an Empirical Experiment on Google Chrome Vulnerabilities

NVD is one of the most popular databases used by researchers to conduct empirical research on data sets of vulnerabilities. Our recent analysis on Chrome vulnerability data reported by NVD has revealed an abnormally phenomenon in the data where almost vulnerabilities were originated from the first versions. This inspires our experiment to validate the reliability of the NVD vulnerable version data. In this experiment, we verify for each version of Chrome that NVD claims vulnerable is actually vulnerable. The experiment revealed several errors in the vulnerability data of Chrome. Furthermore, we have also analyzed how these errors might impact the conclusions of an empirical study on foundational vulnerability. Our results show that different conclusions could be obtained due to the data errors.

cs.CR↗

arXiv2012

Disorder effects on energy bandgap and electronic transport in graphene-nanomesh-based structures

Using atomistic quantum simulation based on a tight binding model, we investigate the formation of energy gap Eg of graphene nanomesh (GNM) lattices and the transport characteristics of GNM-based electronic devices (single potential barrier structure and p-n junction) taking into account the atomic edge disorder of holes. We find that the sensitivity of Eg to the lattice symmetry (i.e., the lattice orientation and the hole shape) is significantly suppressed in the presence of the disorder. In the case of strong disorder, the dependence of Eg on the neck width is fitted well with the scaling rule observed in experiments [Liang et al., Nano Lett. 10, 2454 (2010)]. Considering the transport characteristics of GNM-based structures, we demonstrate that the use of finite GNM sections in the devices can efficiently improve their electrical performance (i.e., high ON/OFF current ratio, good current saturation and negative differential conductance behaviors). Additionally, if the length of GNM sections is appropriately limited, the detrimental effects of disorder on transport can be avoided to a large extent. Our study provides a good explanation of the available experimental data on GNM energy gap and should be helpful for further investigations of GNM-based devices.

cond-mat.mes-hall↗