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Vijaykrishnan Narayanan

Publications and source records attributed to Vijaykrishnan Narayanan.

At least 37 records · Page 2Linked to original sources

PIFS-Rec: Process-In-Fabric-Switch for Large-Scale Recommendation System Inferences

Deep Learning Recommendation Models (DLRMs) have become increasingly popular and prevalent in today's datacenters, consuming most of the AI inference cycles. The performance of DLRMs is heavily influenced by available bandwidth due to their large vector sizes in embedding tables and concurrent accesses. To achieve substantial improvements over existing solutions, novel approaches towards DLRM optimization are needed, especially, in the context of emerging interconnect technologies like CXL. This study delves into exploring CXL-enabled systems, implementing a process-in-fabric-switch (PIFS) solution to accelerate DLRMs while optimizing their memory and bandwidth scalability. We present an in-depth characterization of industry-scale DLRM workloads running on CXL-ready systems, identifying the predominant bottlenecks in existing CXL systems. We, therefore, propose PIFS-Rec, a PIFS-based scheme that implements near-data processing through downstream ports of the fabric switch. PIFS-Rec achieves a latency that is 3.89x lower than Pond, an industry-standard CXL-based system, and also outperforms BEACON, a state-of-the-art scheme, by 2.03x.

cs.AR↗

Synergistic and Efficient Edge-Host Communication for Energy Harvesting Wireless Sensor Networks

There is an increasing demand for intelligent processing on ultra-low-power internet of things (IoT) device. Recent works have shown substantial efficiency boosts by executing inferences directly on the IoT device (node) rather than transmitting data. However, the computation and power demands of Deep Neural Network (DNN)-based inference pose significant challenges in an energy-harvesting wireless sensor network (EH-WSN). Moreover, these tasks often require responses from multiple physically distributed EH sensor nodes, which impose crucial system optimization challenges in addition to per-node constraints. To address these challenges, we propose Seeker, a hardware-software co-design approach for increasing on-sensor computation, reducing communication volume, and maximizing inference completion, without violating the quality of service, in EH-WSNs coordinated by a mobile device. Seeker uses a store-and-execute approach to complete a subset of inferences on the EH sensor node, reducing communication with the mobile host. Further, for those inferences unfinished because of the harvested energy constraints, it leverages task-aware coreset construction to efficiently communicate compact features to the host device. We evaluate Seeker for human activity recognition, as well as predictive maintenance and show ~8.9x reduction in communication data volume with 86.8% accuracy, surpassing the 81.2% accuracy of the state-of-the-art.

cs.AR↗

Can Prompt Modifiers Control Bias? A Comparative Analysis of Text-to-Image Generative Models

It has been shown that many generative models inherit and amplify societal biases. To date, there is no uniform/systematic agreed standard to control/adjust for these biases. This study examines the presence and manipulation of societal biases in leading text-to-image models: Stable Diffusion, DALL-E 3, and Adobe Firefly. Through a comprehensive analysis combining base prompts with modifiers and their sequencing, we uncover the nuanced ways these AI technologies encode biases across gender, race, geography, and region/culture. Our findings reveal the challenges and potential of prompt engineering in controlling biases, highlighting the critical need for ethical AI development promoting diversity and inclusivity. This work advances AI ethics by not only revealing the nuanced dynamics of bias in text-to-image generation models but also by offering a novel framework for future research in controlling bias. Our contributions-panning comparative analyses, the strategic use of prompt modifiers, the exploration of prompt sequencing effects, and the introduction of a bias sensitivity taxonomy-lay the groundwork for the development of common metrics and standard analyses for evaluating whether and how future AI models exhibit and respond to requests to adjust for inherent biases.

cs.CV↗

Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate

In this work, we propose a dual-port cell design to address the pass disturb in vertical NAND storage, which can pass signals through a dedicated and string-compatible pass gate. We demonstrate that: i) the pass disturb-free feature originates from weakening of the depolarization field by the pass bias at the high-${V}_{TH}$ (HVT) state and the screening of the applied field by channel at the low-${V}_{TH}$ (LVT) state; ii) combined simulations and experimental demonstrations of dual-port design verify the disturb-free operation in a NAND string, overcoming a key challenge in single-port designs; iii) the proposed design can be incorporated in a highly scaled vertical NAND FeFET string and the pass gate can be incorporated into the existing 3D NAND with the negligible overhead of the pass gate interconnection through a global bottom pass gate contact in the substrate.

cs.ET↗

DRackSim: Simulator for Rack-scale Memory Disaggregation

Memory disaggregation has emerged as an alternative to traditional server architecture in data centers. This paper introduces DRackSim, a simulation infrastructure to model rack-scale hardware disaggregated memory. DRackSim models multiple compute nodes, memory pools, and a rack-scale interconnect similar to GenZ. An application-level simulation approach simulates an x86 out-of-order multi-core processor with a multi-level cache hierarchy at compute nodes. A queue-based simulation is used to model a remote memory controller and rack-level interconnect, which allows both cache-based and page-based access to remote memory. DRackSim models a central memory manager to manage address space at the memory pools. We integrate community-accepted DRAMSim2 to perform memory simulation at local and remote memory using multiple DRAMSim2 instances. An incremental approach is followed to validate the core and cache subsystem of DRackSim with that of Gem5. We measure the performance of various HPC workloads and show the performance impact for different nodes/pools configuration.

cs.DC↗

Reimagining Sense Amplifiers: Harnessing Phase Transition Materials for Current and Voltage Sensing

Energy-efficient sense amplifier (SA) circuits are essential for reliable detection of stored memory states in emerging memory systems. In this work, we present four novel sense amplifier (SA) topologies based on phase transition material (PTM) tailored for non-volatile memory applications. We utilize the abrupt switching and volatile hysteretic characteristics of PTMs which enables efficient and fast sensing operation in our proposed SA topologies. We provide comprehensive details of their functionality and assess how process variations impact their performance metrics. Our proposed sense amplifier topologies manifest notable performance enhancement. We achieve a ~67% reduction in sensing delay and a ~80% decrease in sensing power for current sensing. For voltage sensing, we achieve a ~75% reduction in sensing delay and a ~33% decrease in sensing power. Moreover, the proposed SA topologies exhibit improved variation robustness compared to conventional SAs. We also scrutinize the dependence of transistor mirroring window and PTM transition voltages on several device parameters to determine the optimum operating conditions and stance of tunability for each of the proposed SA topologies.

cs.ET↗

Embedding Security into Ferroelectric FET Array via In-Situ Memory Operation

Non-volatile memories (NVMs) have the potential to reshape next-generation memory systems because of their promising properties of near-zero leakage power consumption, high density and non-volatility. However, NVMs also face critical security threats that exploit the non-volatile property. Compared to volatile memory, the capability of retaining data even after power down makes NVM more vulnerable. Existing solutions to address the security issues of NVMs are mainly based on Advanced Encryption Standard (AES), which incurs significant performance and power overhead. In this paper, we propose a lightweight memory encryption/decryption scheme by exploiting in-situ memory operations with negligible overhead. To validate the feasibility of the encryption/decryption scheme, device-level and array-level experiments are performed using ferroelectric field effect transistor (FeFET) as an example NVM without loss of generality. Besides, a comprehensive evaluation is performed on a 128x128 FeFET AND-type memory array in terms of area, latency, power and throughput. Compared with the AES-based scheme, our scheme shows around 22.6x/14.1x increase in encryption/decryption throughput with negligible power penalty. Furthermore, we evaluate the performance of our scheme over the AES-based scheme when deploying different neural network workloads. Our scheme yields significant latency reduction by 90% on average for encryption and decryption processes.

cs.ET↗

Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET

Single-port ferroelectric FET (FeFET) that performs write and read operations on the same electrical gate prevents its wide application in tunable analog electronics and suffers from read disturb, especially to the high-threshold voltage (VTH) state as the retention energy barrier is reduced by the applied read bias. To address both issues, we propose to adopt a read disturb-free dual-port FeFET where write is performed on the gate featuring a ferroelectric layer and the read is done on a separate gate featuring a non-ferroelectric dielectric. Combining the unique structure and the separate read gate, read disturb is eliminated as the applied field is aligned with polarization in the high-VTH state and thus improving its stability, while it is screened by the channel inversion charge and exerts no negative impact on the low-VTH state stability. Comprehensive theoretical and experimental validation have been performed on fully-depleted silicon-on-insulator (FDSOI) FeFETs integrated on 22 nm platform, which intrinsically has dual ports with its buried oxide layer acting as the non-ferroelectric dielectric. Novel applications that can exploit the proposed dual-port FeFET are proposed and experimentally demonstrated for the first time, including FPGA that harnesses its read disturb-free feature and tunable analog electronics (e.g., frequency tunable ring oscillator in this work) leveraging the separated write and read paths.

cs.ET↗

ASMCap: An Approximate String Matching Accelerator for Genome Sequence Analysis Based on Capacitive Content Addressable Memory

Genome sequence analysis is a powerful tool in medical and scientific research. Considering the inevitable sequencing errors and genetic variations, approximate string matching (ASM) has been adopted in practice for genome sequencing. However, with exponentially increasing bio-data, ASM hardware acceleration is facing severe challenges in improving the throughput and energy efficiency with the accuracy constraint. This paper presents ASMCap, an ASM acceleration approach for genome sequence analysis with hardware-algorithm co-optimization. At the circuit level, ASMCap adopts charge-domain computing based on the capacitive multi-level content addressable memories (ML-CAMs), and outperforms the state-of-the-art ML-CAM-based ASM accelerators EDAM with higher accuracy and energy efficiency. ASMCap also has misjudgment correction capability with two proposed hardware-friendly strategies, namely the Hamming-Distance Aid Correction (HDAC) for the substitution-dominant edits and the Threshold-Aware Sequence Rotation (TASR) for the consecutive indels. Evaluation results show that ASMCap can achieve an average of 1.2x (from 74.7% to 87.6%) and up to 1.8x (from 46.3% to 81.2%) higher F1 score (the key metric of accuracy), 1.4x speedup, and 10.8x energy efficiency improvement compared with EDAM. Compared with the other ASM accelerators, including ResMA based on the comparison matrix, and SaVI based on the seeding strategy, ASMCap achieves an average improvement of 174x and 61x speedup, and 8.7e3x and 943x higher energy efficiency, respectively.

cs.AR↗

Eliminating Leakage in Volatile Memory with Anti-Ferroelectric Transistors

Cache serves as a temporary data memory module in many general-purpose processors and domain-specific accelerators. Its density, power, speed, and reliability play a critical role in enhancing the overall system performance and quality of service. Conventional volatile memories, including static random-access memory (SRAM) and embedded dynamic random-access memory (eDRAM) in the complementary metal-oxide-semiconductor technology, have high performance and good reliability. However, the inherent leakage in both SRAM and eDRAM hinders further improvement towards smaller feature sizes and higher energy efficiency. Although the emerging nonvolatile memories can eliminate the leakage efficiently, the penalties of lower speed and degraded reliability are significant. This article reveals a new opportunity towards leakage-free volatile static memory beyond the known paradigms of existing volatile and nonvolatile memories. By engineering a double-well energy landscape with the assistance of a clamping voltage bias, leakage-free and refresh-free state retention of volatile memory is achieved for the first time. This new memory is highlighted by both the ultra-low leakage of nonvolatile memories and the speed, energy, and reliability advantages of volatile memories. A proof-of-concept memory is demonstrated using in-house anti-ferroelectric field-effect transistors (AFeFETs), delivering an extrapolated endurance of about 1012 cycles, a retention time of over 10 years, and no subthreshold channel leakage current. Such a new concept of AFeFET-based memory enables an improved balance between density, power, and reliability beyond all existing memory solutions.

cs.ET↗

Voltage-controlled Cryogenic Boolean Logic Family Based on Ferroelectric SQUID

The recent progress in quantum computing and space exploration led to a surge in interest in cryogenic electronics. Superconducting devices such as Josephson junction, Josephson field effect transistor, cryotron, and superconducting quantum interference device (SQUID) are traditionally used to build cryogenic logic gates. However, due to the superconducting nature, gate-voltage-based control of these devices is extremely difficult. Even more challenging is to cascade the logic gates because most of these devices require current bias for their operation. Therefore, these devices are not as convenient as the semiconducting transistors to design logic gates. Here, to overcome these challenges, we propose a ferroelectric SQUID (FeSQUID) based voltage-controlled logic gates. FeSQUID exhibits two different critical current levels for two different voltage-switchable polarization states of the ferroelectric. We utilize the polarization-dependent (hence, voltage-controllable) superconducting to resistive switching of FeSQUID to design Boolean logic gates such as Copy, NOT, AND, and OR gates. The operations of these gates are verified using a Verilog-A-based compact model of FeSQUID. Finally, to demonstrate the fanning out capability of FeSQUID-based logic family, we simulate a 2-input XOR gate using FeSQUID-based NOT, AND, and OR gates. Together with the ongoing progress on FeSQUID-based non-volatile memory, our designed FeSQUID-based logic family will enable all-FeSQUID based cryogenic computer, ensure minimum mismatch between logic and memory blocks in terms of speed, power consumption, and fabrication process.

physics.app-ph↗

Ferroelectric FET based Context-Switching FPGA Enabling Dynamic Reconfiguration for Adaptive Deep Learning Machines

Field Programmable Gate Array (FPGA) is widely used in acceleration of deep learning applications because of its reconfigurability, flexibility, and fast time-to-market. However, conventional FPGA suffers from the tradeoff between chip area and reconfiguration latency, making efficient FPGA accelerations that require switching between multiple configurations still elusive. In this paper, we perform technology-circuit-architecture co-design to break this tradeoff with no additional area cost and lower power consumption compared with conventional designs while providing dynamic reconfiguration, which can hide the reconfiguration time behind the execution time. Leveraging the intrinsic transistor structure and non-volatility of ferroelectric FET (FeFET), compact FPGA primitives are proposed and experimentally verified, including 1FeFET look-up table (LUT) cell, 1FeFET routing cell for connection blocks (CBs) and switch boxes (SBs). To support dynamic reconfiguration, two local copies of primitives are placed in parallel, which enables loading of arbitrary configuration without interrupting the active configuration execution. A comprehensive evaluation shows that compared with the SRAM-based FPGA, our dynamic reconfiguration design shows 63.0%/71.1% reduction in LUT/CB area and 82.7%/53.6% reduction in CB/SB power consumption with minimal penalty in the critical path delay (9.6%). We further implement a Super-Sub network model to show the benefit from the context-switching capability of our design. We also evaluate the timing performance of our design over conventional FPGA in various application scenarios. In one scenario that users switch between two preloaded configurations, our design yields significant time saving by 78.7% on average. In the other scenario of implementing multiple configurations with dynamic reconfiguration, our design offers time saving of 20.3% on average.

cs.AR↗

FAST: A Fully-Concurrent Access Technique to All SRAM Rows for Enhanced Speed and Energy Efficiency in Data-Intensive Applications

Compute-in-memory (CiM) is a promising approach to improving the computing speed and energy efficiency in dataintensive applications. Beyond existing CiM techniques of bitwise logic-in-memory operations and dot product operations, this paper extends the CiM paradigm with FAST, a new shift-based inmemory computation technique to handle high-concurrency operations on multiple rows in an SRAM. Such high-concurrency operations are widely seen in both conventional applications (e.g. the table update in a database), and emerging applications (e.g. the parallel weight update in neural network accelerators), in which low latency and low energy consumption are critical. The proposed shift-based CiM architecture is enabled by integrating the shifter function into each SRAM cell, and by creating a datapath that exploits the high-parallelism of shifting operations in multiple rows in the array. A 128-row 16-column shiftable SRAM in 65nm CMOS is designed to evaluate the proposed architecture. Postlayout SPICE simulations show average improvements of 4.4x energy efficiency and 96.0x speed over a conventional fully-digital memory-computing-separated scheme, when performing the 8-bit weight update task in a VGG-7 framework.

cs.AR↗

Ferroelectric FET-based strong physical unclonable function: a low-power, high-reliable and reconfigurable solution for Internet-of-Things security

Hardware security has been a key concern in modern information technologies. Especially, as the number of Internet-of-Things (IoT) devices grows rapidly, to protect the device security with low-cost security primitives becomes essential, among which Physical Unclonable Function (PUF) is a widely-used solution. In this paper, we propose the first FeFET-based strong PUF exploiting the cycle-to-cycle (C2C) variation of FeFETs as the entropy source. Based on the experimental measurements, the proposed PUF shows satisfying performance including high uniformity, uniqueness, reconfigurability and reliability. To resist machine-learning attack, XOR structure was introduced, and simulations show that our proposed PUF has similar resistance to existing attack models with traditional arbiter PUFs. Furthermore, our design is shown to be power-efficient, and highly robust to write voltage, temperature and device size, which makes it a competitive security solution for Internet-of-Things edge devices.

cs.ET↗

GRAPHIC: GatheR-And-Process in Highly parallel with In-SSD Compression Architecture in Very Large-Scale Graph

Graph convolutional network (GCN), an emerging algorithm for graph computing, has achieved promising performance in graphstructure tasks. To achieve acceleration for data-intensive and sparse graph computing, ASICs such as GCNAX have been proposed for efficient execution of aggregation and combination in GCN. GCNAX reducing 8x DRAM accesses compared with previous efforts. However, as graphs have reached terabytes in size, off-chip data movement from SSD to DRAM becomes a serious latency bottleneck. This paper proposes Compressive Graph Transmission (CGTrans), which performs the aggregation in SSD to dramatically relieves the transfer latency bottleneck due to SSD loading compared to CMOS-based graph accelerator ASICs. InSSD computing technique is required for CGTrans. Recently, Insider was proposed as a near-SSD processing system computing by integrating FPGA in SSD. However, the Insider still suffers low area efficiency, which will limit the performance of CGTrans. The recently proposed Fully Concurrent Access Technique (FAST) is utilized. FAST-GAS, as an in-SSD graph computing accelerator, is proposed to provide high-concurrent gather-andscatter operations to overcome the area efficiency problem. We proposed the GRAPHIC system containing CGTrans dataflow deployed on FAST-GAS. Experiments show CGTrans reduces SSD loading by a factor of 50x, while GRAPHIC achieves 3.6x, and 2.4x speedup on average over GCNAX and CGTrans on Insider, respectively.

cs.AR↗

ALL-MASK: A Reconfigurable Logic Locking Method for Multicore Architecture with Sequential-Instruction-Oriented Key

Intellectual property (IP) piracy has become a non-negligible problem as the integrated circuit (IC) production supply chain is becoming increasingly globalized and separated that enables attacks by potentially untrusted attackers. Logic locking is a widely adopted method to lock the circuit module with a key and prevent hackers from cracking it. The key is the critical aspect of logic locking, but the existing works have overlooked three possible challenges of the key: safety of key storage, easy key-attempt from interface and key-related overheads, bringing the further challenges of low error rate and small state space. In this work, the key is dynamically generated by utilizing the huge space of a CPU core, and the unlocking is performed implicitly through the interconnection inside the chip. A novel low-cost logic reconfigurable gate is together proposed with ferroelectric FET (FeFET) to mitigate the reverse engineering and removal attack. Compared to the common logic locking methods, our proposed approach is 19,945 times more time consuming to traverse all the possible combinations in only 9-bit-key condition. Furthermore, our technique let key length increases this complexity exponentially and ensure the logic obfuscation effect.

cs.AR↗

CMOS-Compatible Ising Machines built using Bistable Latches Coupled through Ferroelectric Transistor Arrays

Realizing compact and scalable Ising machines that are compatible with CMOS-process technology is crucial to the effectiveness and practicality of using such hardware platforms for accelerating computationally intractable problems. Besides the need for realizing compact Ising spins, the implementation of the coupling network, which describes the spin interaction, is also a potential bottleneck in the scalability of such platforms. Therefore, in this work, we propose an Ising machine platform that exploits the novel behavior of compact bi-stable CMOS-latches (cross-coupled inverters) as classical Ising spins interacting through highly scalable and CMOS-process compatible ferroelectric-HfO2-based Ferroelectric FETs (FeFETs) which act as coupling elements. We experimentally demonstrate the prototype building blocks of this system, and evaluate the behavior of the scaled system using simulations. We project that the proposed architecture can compute Ising solutions with an efficiency of ~1.04 x 10^8 solutions/W/second. Our work not only provides a pathway to realizing CMOS-compatible designs but also to overcoming their scaling challenges.

physics.app-ph↗

Hardware Functional Obfuscation With Ferroelectric Active Interconnects

Camouflaging gate techniques are typically used in hardware security to prevent reverse engineering. Layout level camouflaging by adding dummy contacts ensures some level of protection against extracting the correct netlist. Threshold voltage manipulation for multi-functional logic with identical layouts has also been introduced for functional obfuscation. All these techniques are implemented at the expense of circuit-complexity and with significant area, energy, and delay penalty. In this paper, we propose an efficient hardware encryption technique with minimal complexity and overheads based on ferroelectric field-effect transistor (FeFET) active interconnects. The active interconnect provides run-time reconfigurable inverter-buffer logic by utilizing the threshold voltage programmability of the FeFETs. Our method utilizes only two FeFETs and an inverter to realize the masking function compared to recent reconfigurable logic gate implementations using several FeFETs and complex differential logic. We fabricate the proposed circuit and demonstrate the functionality. Judicious placement of the proposed logic in the IC makes it acts as a hardware encryption key and enables encoding and decoding of the functional output without affecting the critical path timing delay. Also, we achieve comparable encryption probability with a limited number of encryption units. In addition, we show a peripheral programming scheme for reconfigurable logic by reusing the existing scan chain logic, hence obviating the need for specialized programming logic and circuitry for keybit distribution. Our analysis shows an average encryption probability of 97.43% with an increase of 2.24%/ 3.67% delay for the most critical path/ sum of 100 critical paths delay for ISCAS85 benchmarks.

cs.ET↗