arXiv subjects
Publications and source records attributed to Viktor A. Sverdlov.
This write-up describes an efficient numerical method for the Monte Carlo calculation of the spectral density of current in the multi-junction single-electron devices and hopping structures. In future we plan to expand this write-up into a full-size paper.
We have used Monte Carlo simulation to calculate the shot noise intensity $S_I(ω)$ at 2D hopping using two models: a slanted lattice of localized sites with equal energies and a set of localized sites with random positions and energies. For wide samples we have found a similar dependence of the Fano factor $F \equiv S_I(0)/2eI$ on the sample length $L$: $F \propto L^{-α}$ where $α=0.85 \pm 0.02$ and $α= 0.85\pm 0.07$ in uniform and random models, respectively. Moreover, at least for the uniform model, all the data for $F$ as the function of sample length $L$ and width $W$ may be presented via a single function of the ratio $W/L^β$, with $β= 2α-1 \approx 0.7$. This relation has been interpreted using a simple scaling theory.
Numerical modeling of correlated single-electron tunneling in uniform 2D arrays of small conducting islands separated by tunnel junctions shows the possiblility of soliton-antisoliton avalanches. Though the time duration of any avalanche, and the total charge $ΔQ = ne$ transferred across the array during the avalanche, are always finite, in arrays with length $N$ larger than certain critical value $N_c$ and large width $M \gg f(N)$, the avalanche magnitude $n$ may be exponentially large, resulting in particular in a giant increase of shot noise. Thermal fluctuations and disorder gradually suppress the avalanche effect.