arXiv subjects

Vincent H. Crespi

Publications and source records attributed to Vincent H. Crespi.

At least 19 recordsLinked to original sources

arXiv2026

Vanadium doping induced valley asymmetries in WS$_2$ monolayers

Transition metal dichalcogenide (TMD) monolayers offer an innovative platform for encoding and manipulating information through the valley degree of freedom. While unique valley-related physical phenomena have been reported so far, practical applications still require advanced control over the valley polarization efficiency and the valley Zeeman effect. Recently, the introduction of spin-polarized metal atoms as substitutional defects was reported to break the time-reversal symmetry in TMD monolayers, consequently inducing a room-temperature ferromagnetic ordering and enhancing the valley-dependent optical responses. Here, we report valley asymmetries for vanadium-doped WS$_2$ monolayers. With a given magnetic polarization, one valley exhibits larger Zeeman slope and degree of circular polarization than the other valley. Additionally, the overall degree of circular polarization in the doped samples is approximately twice that of the pristine WS$_2$ monolayer. Density functional theory calculations in the doped structure show that different energy shifts in conduction band edges due to spin-dependent hybridization lead to different exciton energies between valleys, which is consistent with the experimental observations. Our results pave the way for valleytronic technologies based on defect-engineered two-dimensional materials.

cond-mat.mes-hall↗

arXiv2026

Lifetime Sample Tracking (LiST): A Data Platform for Materials Science

The 2D Crystal Consortium Materials Innovation Platform (2DCC-MIP) is an NSF supported national user facility focused on advancing the synthesis of 2D materials, monolayers, surfaces, and interfaces. The need for the facility to organize and share data with users led to the development of an internal data management and analysis engine, the Lifetime Sample Tracking platform (LiST). This infrastructure allows the automated capture, curation, analysis and dissemination of data ranging from experimental materials synthesis parameters and characterization, to theoretical first-principles and ReaxFF molecular dynamics modeling1. The system currently hosts synthesis and property data (accessible via a REST API) on approximately twenty thousand samples produced by the 2DCC grown using a variety of techniques from bulk crystal growth to metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE), among others. Data used in publications can easily be grouped by the system into data packages that are given digital object identifiers (DOIs) for inclusion with each publication. The LiST platform is now being used by groups outside of the 2DCC as a solution for data curation in materials science. Data management tools such as LiST support the materials development process by allowing a closed loop iteration between synthesis, characterization, theory, and targeted materials design. This also enables machine learning (ML) research, artificial intelligence (AI) analysis, and the potential for autonomous synthesis in the future.

cond-mat.mtrl-sci↗

arXiv2026

Impact of Cu-Mn ratio on Structure and Defects in Layered Multiferroic Cu1-xMn1+ySiTe3

Multiferroic materials exhibit the coexistence of magnetic and ferroelectric order, enabling control of magnetism through electric fields and vice versa. These properties make them attractive for spintronic and memory device applications. Recent studies on Cu1-xMn1+ySiTe3 (0.04 \leq x \leq 0.26; 0.03 \leq y \leq 0.15) have revealed strong magnetoelectric coupling, with variations in Mn-to-Cu concentration leading to variations in optical, electronic, and magnetic responses. Despite these findings, the influence of nanoscale structure and defects on the observed properties remains poorly understood. In this study, we investigate the structure and nanoscale defects in Cu-deficient Cu1-xMn1+ySiTe3 (Cu:Mn ratio <1, i.e., with 0.04 \leq x \leq 0.26 and 0.03 \leq y \leq 0.15) and Cu-rich Cu1+xMn1-ySiTe3 (Cu:Mn ratio >1, i.e., with 0.04 \leq x \leq 0.3 and 0.13 \leq y \leq 0.31) crystals using scanning/transmission electron microscopy and single-crystal X-ray diffraction. Cu-deficient crystals exhibit extensive stacking faults correlated with chemical inhomogeneity between Mn and Cu, along with variations in Te stacking. In contrast, Cu-rich crystals show fewer stacking faults but contain other local structural variations, such as needle-shaped precipitates and loop-like features. These distinct local structural features between Cu-rich and Cu-deficient crystals can be correlated to variations in their observed properties. Complementary density functional theory calculations confirm that the Cu-rich structure is more polar than the Cu-deficient structure. Overall, this study provides a comprehensive understanding of how subtle changes in chemistry influence the nanoscale structure, defect distribution, and functional properties in Cu1-xMn1+ySiTe3, offering guidance for designing multiferroic materials with tailored performance.

cond-mat.mtrl-sci↗

arXiv2026

Phase-dependent electronic structure of two-dimensional Ag layers at the graphene/SiC interface

Intercalation at the graphene/SiC interface provides a controlled route to stabilize atomically thin layers with properties distinct from their bulk counterparts. In this platform, the structure and stability of the intercalated phase depend sensitively on the defect landscape of the starting substrate. For intercalated two-dimensional silver at the graphene/SiC interface, two phases have been observed: a phase epitaxial to the SiC lattice, Ag$_{(1)}$, readily obtained following the conventional intercalation method under ultra-high-vacuum conditions and extensively characterized, and a more densely packed phase, called Ag$_{(2)}$, which has remained largely unexplored. Here we report an in situ ultra-high-vacuum preparation method of the second phase intercalated at the graphene/SiC interface; this phase previously was prepared via high-pressure confinement heteroepitaxy. Low-energy electron diffraction shows that Ag$_{(2)}$ is rotated by 30 degree relative to the SiC lattice and forms supercells, in contrast to the $(1\times 1)$ epitaxial relation of Ag$_{(1)}$ with SiC. High-resolution angle-resolved photoemission spectroscopy reveals a more rich Ag$_{(2)}$ band dispersion compared to the Ag$_{(1)}$. In density functional theory calculations, by defining the unfolding entropy which, in a quantified way, finds that the band structure of Ag$_{(2)}$ is more suitable to be unfolded to the SiC primitive cell, and the resulting unfolded band dispersion is in great agreement with the experimental data. We further show that the different intercalated Ag phases tune the electronic properties of the overlying quasi-free-standing graphene layer differently: compared with Ag$_{(1)}$, Ag$_{(2)}$ yields an $\sim$1.75 times higher charge carrier density and modifies the charge-plasmon interaction of the graphene layer, indicating a change in effective screening at the interface.

cond-mat.mtrl-sci↗

arXiv2026

Defect Control via Cu Enrichment Enhances Multifunctional Properties in the Polar Semiconductor Cu1+xMn1-ySiTe3

Polar materials have recently attracted significant interest due to their rich multifunctional properties. The chalcogenide polar semiconductor Cu1-xMn1+ySiTe3 (Cu-deficient) is an emerging multiferroic system in which electric polarization is coupled to magnetization. However, its macroscopic ferroelectric polarization is strongly suppressed due to the presence of a high density of stacking faults. In this work, we demonstrate that these crystal defects, likely originating from non-stoichiometry, can be substantially reduced by increasing the Cu content. Cu-enriched samples, Cu1+xMn1-ySiTe3, crystallize in a noncentrosymmetric monoclinic structure (space group Pm) as the Cu-deficient counterpart but show a nearly stacking-fault-free phase, which is attributed to the emergence of an interstitial site. Consequently, the Cu-enriched samples show a pronounced enhancement of the second-harmonic generation (SHG) response compared to Cu-deficient compositions. Magnetically, the Cu-enriched crystals retain long-range antiferromagnetic order with a Neel temperature of TN ~ 33 K without a glassy state but manifest a distinct spin-flop transition along the polar b-axis that is absent in the Cu-deficient compositions. Furthermore, the electronic ground state evolves from insulating to doped semiconducting behavior upon Cu enrichment. Together, these results establish this material system as a unique and versatile platform for elucidating the interplay among composition, crystal defects, and multifunctional properties, offering a route to design magnetic polar systems with tunable quantum functionalities.

cond-mat.mtrl-sci↗

arXiv2025

Two-dimensional Indium Oxide at the Epitaxial Graphene/SiC Interface: Synthesis, Structure, Properties, and Devices

High-quality two-dimensional (2D) dielectrics are crucial for fabricating 2D/3D hybrid vertical electronic devices such as metal-oxide-semiconductor (MOS) based Schottky diodes and hot electron transistors, the production of which is constrained by the scarcity of bulk layered wide bandgap semiconductors. In this research, we present the synthesis of a new 2D dielectric, monolayer InO2, which differs in stoichiometry from its bulk form, over a large area (>300 um2) by intercalating at the epitaxial graphene (EG)/SiC interface. By adjusting the lateral size of graphene through optical lithography prior to the intercalation, we tune the thickness of InO2 where predominantly (~85%) monolayer InO2 is formed. The preference for monolayer formation of InO2 is explained using ReaxFF reactive molecular dynamics and density functional theory (DFT) calculations. Additionally, the band gap of InO2 is calculated to be 4.1 eV, differing from its bulk form (2.7 eV). Furthermore, MOS-based Schottky diode measurements on InO2 intercalated EG/n-SiC demonstrate that the EG/n-SiC junction transforms from ohmic to a Schottky junction upon intercalation, with a barrier height of 0.87 eV and a rectification ratio of ~10^5. These findings introduce a new addition to the 2D dielectric family, showing significant potential for monolayer InO2 to be used as a barrier in vertical electronic devices.

cond-mat.mtrl-sci↗

arXiv2025

Defect-Mediated Phase Engineering of 2D Ag at the Graphene/SiC Interface

Atomically thin silver (Ag) films offer unique opportunities in plasmonic, quantum optics, and energy harvesting, yet conventional growth methods struggle to achieve structural control at the monolayer limit. Here, we demonstrate phase-selective synthesis of large-area, crystalline 2D Ag films via defect-engineered confinement heteroepitaxy (CHet) at the epitaxial graphene/silicon carbide (EG/SiC) interface. By tuning graphene growth and post-growth defect introduction, two distinct Ag phases are achieved with disparate properties: a nearly commensurate Ag(1) lattice stabilized by vacancy and line defects in epitaxial graphene, and a denser Ag(2) phase preferentially grown with sp3-rich zero-layer graphene. Structural and spectroscopic characterization confirm lattice registry with the SiC substrate, while theoretical calculations reveal a thermodynamic preference for Ag(2) but an easier nucleation for Ag(1). Both phases are found to be semiconducting, with the Ag(2) phase exhibiting slightly enhanced n-doping of graphene. Notably, nonlinear optical measurements reveal a three-order magnitude difference in second-order susceptibility between the two phases, demonstrating promise for phase-tunable 2D metals in reconfigurable optoelectronic and metamaterial platforms.

cond-mat.mtrl-sci↗

arXiv2025

Orbital Hybridization-Induced Ising-Type Superconductivity in a Confined Gallium Layer

In low-dimensional superconductors, the interplay between quantum confinement and interfacial hybridization effects can reshape Cooper pair wavefunctions and induce novel forms of unconventional superconductivity. In this work, we employ a plasma-free, carbon buffer layer-assisted confinement epitaxy method to synthesize trilayer gallium (Ga) sandwiched between a graphene layer and a 6H-SiC(0001) substrate, forming an air-stable graphene/trilayer Ga/SiC heterostructure. In this confined light-element Ga layer, we demonstrate interfacial Ising-type superconductivity driven by atomic orbital hybridization between the Ga layer and the SiC substrate. Electrical transport measurements reveal that the in-plane upper critical magnetic field u0Hc2,|| reaches ~21.98T at T=400 mK, approximately 3.38 times the Pauli paramagnetic limit (~6.51T). Angle-resolved photoemission spectroscopy (ARPES) measurements combined with theoretical calculations confirm the presence of split Fermi surfaces with Ising-type spin textures at the K and K' valleys of the confined Ga layer strongly hybridized with SiC. Moreover, by incorporating finite relaxation time induced by impurity scattering into an Ising-type superconductivity model, we reproduce the entire temperature-dependent u0Hc2,|| phase diagram. This work establishes a new strategy to realize unconventional pairing wavefunctions by combining quantum confinement and interfacial hybridization effects in superconducting thin films. It also opens new avenues for designing scalable superconducting quantum electronic and spintronic devices through interfacial engineering.

cond-mat.mes-hall↗

arXiv2025

Classical triangular lattice antiferromagnetic Ising model as a free-fermion/superconductor system

We present a treatment of the triangular lattice antiferromagnetic Ising model (TAFIM) based on a small number of elementary ideas common to statistical and solid-state physics. The TAFIM is represented as a reduced BCS model in one space, one (imaginary) time dimension. The representation is approximate for nonzero temperature, but allows quick derivation of asymptotically exact thermodynamic functions, and the divergence of the spin-spin correlation length. The fermionic representation is exact at zero temperature. We demonstrate the existence of a two-dimensional continuum of zero-temperature equilibrium macrostates characterized by satisfied bond fractions of the three different orientations, and calculate their entropy densities.

cond-mat.stat-mech↗

arXiv2024

Giant and Tunable Bosonic Quantum Interference Induced by Two-Dimensional Metals

Harnessing quantum interference among bosons provides significant opportunities as bosons often carry longer coherence time than fermions. As an example of quantum interference, Fano resonance involving phonons or photons describes the coupling between discrete and continuous states, signified by an asymmetric spectral lineshape. Utilizing photon-based Fano resonance, molecule sensing with ultra-high sensitivity and ultrafast optical switching has been realized. However, phonon-based Fano resonance, which would expand the application space to a vaster regime, has been less exploited because of the weak coupling between discrete phonons with continuous states such as electronic continuum. In this work, we report the discovery of giant phonon-based Fano resonance in a graphene/2D Ag/SiC heterostructure. The Fano asymmetry, being proportional to the coupling strength, exceeds prior reports by two orders of magnitude. This Fano asymmetry arises from simultaneous frequency and lifetime matching between discrete and continuous phonons of SiC. The introduction of 2D Ag layers restructures SiC at the interface and facilitates resonant scattering to further enhance the Fano asymmetry, which is not achievable with conventional Ag thin films. With these unique properties, we demonstrated that the phonon-based Fano resonance can be used for ultrasensitive molecule detection at the single-molecule level. Our work highlights strong Fano resonance in the phononic system, opening avenues for engineering quantum interference based on bosons. Further, our findings provide opportunities for advancing phonon-related applications, including biochemical sensing, quantum transduction, and superconductor-based quantum computing.

cond-mat.mtrl-sci↗

arXiv2024

Large-Area Intercalated 2D-Pb/Graphene Heterostructure as a Platform for Generating Spin-Orbit Torque

A scalable platform to synthesize ultrathin heavy metals may enable high efficiency charge-to-spin conversion for next-generation spintronics. Here we report the synthesis of air-stable, epitaxially registered monolayer Pb underneath bilayer graphene on SiC (0001) by confinement heteroepitaxy (CHet). Diffraction, spectroscopy, and microscopy reveal CHet-based Pb intercalation predominantly exhibits a mottled hexagonal superstructure due to an ordered network of Frenkel-Kontorova-like domain walls. The system's air stability enables ex-situ spin torque ferromagnetic resonance (ST-FMR) measurements that demonstrate charge-to-spin conversion in graphene/Pb/ferromagnet heterostructures with a 1.5x increase in the effective field ratio compared to control samples.

cond-mat.mtrl-sci↗

arXiv2024

Untangling individual cation roles in rock salt high-entropy oxides

We unravel the distinct roles each cation plays in phase evolution, stability, and properties within Mg1/5Co1/5Ni1/5Cu1/5Zn1/5O high-entropy oxide (HEO) by integrating experimental findings, thermodynamic analyses, and first-principles predictions. Our approach is through sequentially removing one cation at a time from the five-component high-entropy oxide to create five four-component derivatives. Bulk synthesis experiments indicate that Mg, Ni, and Co act as rock salt phase stabilizers whereas only Mg and Ni enthalpically enhance single-phase rock salt stability in thin film growth; synthesis conditions dictate whether Co is a rock salt phase stabilizer or destabilizer. By examining the competing phases and oxidation state preferences using pseudo-binary phase diagrams and first-principles calculations, we resolve the stability differences between bulk and thin film for all compositions. We systematically explore HEO macroscopic property sensitivity to cation selection employing both predicted and measured optical spectra. This study establishes a framework for understanding high-entropy oxide synthesizability and properties on a per-cation basis that is broadly applicable to tailoring functional property design in other high-entropy materials.

cond-mat.mtrl-sci↗

arXiv2024

Order evolution from a high-entropy matrix: understanding and predicting paths to low temperature equilibrium

Interest in high-entropy inorganic compounds originates from their ability to stabilize cations and anions in local environments that rarely occur at standard temperature and pressure. This leads to new crystalline phases in many-cation formulations with structures and properties that depart from conventional trends. The highest-entropy homogeneous and random solid-solution is a parent structure from which a continuum of lower-entropy offspring can originate by adopting chemical and/or structural order. This report demonstrates how synthesis conditions, thermal history, and elastic and chemical boundary conditions conspire to regulate this process in Mg0.2Co0.2Ni0.2Cu0.2Zn0.2O, during which coherent CuO nano-tweeds and spinel nano-cuboids evolve. We do so by combining structured synthesis routes, atomic-resolution microscopy and spectroscopy, density functional theory, and a phase field modeling framework that accurately predicts the emergent structure and local chemistry. This establishes a framework to appreciate, understand, and predict the macrostate spectrum available to a high-entropy system that is critical to rationalize property engineering opportunities.

cond-mat.mtrl-sci↗

arXiv2024

Effects of Vanadium Doping on the Optical Response and Electronic Structure of WS$_{2}$ Monolayers

Two-dimensional dilute magnetic semiconductors has been recently reported in semiconducting transition metal dichalcogenides by the introduction of spin-polarized transition metal atoms as dopants. This is the case of vanadium-doped WS$_2$ and WSe$_2$ monolayers, which exhibits a ferromagnetic ordering even above room temperature. However, a broadband characterization of their electronic band structure and its dependence on vanadium concentration is still lacking. Therefore, here we perform power-dependent photoluminescence, resonant four-wave mixing, and differential reflectance spectroscopy to study the optical transitions close to the A exciton energy of vanadium-doped WS$_2$ monolayers with distinct concentrations. Instead of a single A exciton peak, vanadium-doped samples exhibit two photoluminescence peaks associated with transitions to occupied and unoccupied bands. Moreover, resonant Raman spectroscopy and resonant second-harmonic generation measurements revealed a blueshift in the B exciton but no energy change in the C exciton as vanadium is introduced in the monolayers. Density functional theory calculations showed that the band structure is sensitive to the Hubbard $U$ correction for vanadium and several scenarios are proposed to explain the two photoluminescence peaks around the A exciton energy region. Our work provides the first broadband optical characterization of these two-dimensional dilute magnetic semiconductors, shedding light on the novel electronic features of WS$_{2}$ monolayers which are tunable by the vanadium concentration.

cond-mat.mes-hall↗

arXiv2023

Vibrational Entropic Stabilization of Layered Chalcogenides: From Ordered Vacancy Compounds to 2D Layers

Despite the rapid pace of computationally and experimentally discovering new two-dimensional layered materials, a general criteria for a given compound to prefer a layered structure over a non-layered one remains unclear. Articulating such criteria would allow one to identify materials at the verge of an inter-dimensional structural phase transition between a 2D layered phase and 3D bulk one, with potential applications in phase change memory devices. Here we identify a general stabilization effect driven by vibrational entropy that can favor 2D layered structures over 3D bulk structures at higher temperatures, which can manifest in ordered vacancy compounds where phase competition is tight. We demonstrate this vibrational-entropy stabilization effect for three prototypical ordered vacancy chalcogenides, ZnIn2S4 and In2S3, and Cu3VSe4, either by vacancy rearrangement or by cleaving through existing vacancies. The relative vibrational entropy advantage of the 2D layered phase originates mainly from softened out-of-plane dilation phonon modes.

cond-mat.mtrl-sci↗

arXiv2023

Controlling nanothread backbone structure through precursor design

Nanothreads are 1D carbon-based nanomaterials produced by pressure-induced polymerization of multiply unsaturated (and typically aromatic) precursors with multiple bonds between adjacent precursors. We computationally design non-covalent interactions between functional groups on thread-forming monomers to control the relative stabilities of different nanothread backbones. In particular, functionalized furan or thiophene precursors are identified that favor nanothreads with oxygen or sulfur atoms arrayed along the same side of the thread backbone, rather than on alternating sides as currently seen experimentally for threads formed from unfunctionalized furan or thiophene. This heteroatom chain provides opportunities for unusual properties arising from a sterically compressed one-dimensional chain of p orbitals.

cond-mat.mes-hall↗

arXiv2022

Cluster expansion methods from physical concepts

The cluster expansion formalism used in materials science is reconstructed on an axiomatic basis with the aims of clarifying underlying concepts and improving computational procedures, and without using conventional cluster functions. Instead, cluster components of configuration functions are defined in an intrinsic manner, which can be viewed as Moebius inversion of conditional expectation. The associated method for fitting a model to a configurational sample is grounded entirely in Hilbert space geometry. By constructing models directly from the given data, we avoid an underdetermination problem to which the conventional approach is subject. Tensor observables are treated on an equal footing with scalar observables.

cond-mat.mtrl-sci↗

arXiv2021

ZrTe2/CrTe2: an epitaxial van der Waals platform for spintronics

The rapid discovery of two-dimensional (2D) van der Waals (vdW) quantum materials has led to heterostructures that integrate diverse quantum functionalities such as topological phases, magnetism, and superconductivity. In this context, the epitaxial synthesis of vdW heterostructures with well-controlled interfaces is an attractive route towards wafer-scale platforms for systematically exploring fundamental properties and fashioning proof-of-concept devices. Here, we use molecular beam epitaxy to synthesize a vdW heterostructure that interfaces two material systems of contemporary interest: a 2D ferromagnet (1T-CrTe2) and a topological semimetal (ZrTe2). We find that one unit-cell (u.c.) thick 1T-CrTe2 grown epitaxially on ZrTe2 is a 2D ferromagnet with a clear anomalous Hall effect. In thicker samples (12 u.c. thick CrTe2), the anomalous Hall effect has characteristics that may arise from real-space Berry curvature. Finally, in ultrathin CrTe2 (3 u.c. thickness), we demonstrate current-driven magnetization switching in a full vdW topological semimetal/2D ferromagnet heterostructure device.

cond-mat.mtrl-sci↗