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Vipul Bansal

Publications and source records attributed to Vipul Bansal.

6 recordsLinked to original sources

Classical Simulation of Variational Quantum Classifiers using Tensor Rings

In recent times, Variational Quantum Circuits (VQC) have been widely adopted to different tasks in machine learning such as Combinatorial Optimization and Supervised Learning. With the growing interest, it is pertinent to study the boundaries of the classical simulation of VQCs to effectively benchmark the algorithms. Classically simulating VQCs can also provide the quantum algorithms with a better initialization reducing the amount of quantum resources needed to train the algorithm. This manuscript proposes an algorithm that compresses the quantum state within a circuit using a tensor ring representation which allows for the implementation of VQC based algorithms on a classical simulator at a fraction of the usual storage and computational complexity. Using the tensor ring approximation of the input quantum state, we propose a method that applies the parametrized unitary operations while retaining the low-rank structure of the tensor ring corresponding to the transformed quantum state, providing an exponential improvement of storage and computational time in the number of qubits and layers. This approximation is used to implement the tensor ring VQC for the task of supervised learning on Iris and MNIST datasets to demonstrate the comparable performance as that of the implementations from classical simulator using Matrix Product States.

quant-ph

Activation Functions: Dive into an optimal activation function

Activation functions have come up as one of the essential components of neural networks. The choice of adequate activation function can impact the accuracy of these methods. In this study, we experiment for finding an optimal activation function by defining it as a weighted sum of existing activation functions and then further optimizing these weights while training the network. The study uses three activation functions, ReLU, tanh, and sin, over three popular image datasets, MNIST, FashionMNIST, and KMNIST. We observe that the ReLU activation function can easily overlook other activation functions. Also, we see that initial layers prefer to have ReLU or LeakyReLU type of activation functions, but deeper layers tend to prefer more convergent activation functions.

cs.LG

Computational Models for Academic Performance Estimation

Evaluation of students' performance for the completion of courses has been a major problem for both students and faculties during the work-from-home period in this COVID pandemic situation. To this end, this paper presents an in-depth analysis of deep learning and machine learning approaches for the formulation of an automated students' performance estimation system that works on partially available students' academic records. Our main contributions are (a) a large dataset with fifteen courses (shared publicly for academic research) (b) statistical analysis and ablations on the estimation problem for this dataset (c) predictive analysis through deep learning approaches and comparison with other arts and machine learning algorithms. Unlike previous approaches that rely on feature engineering or logical function deduction, our approach is fully data-driven and thus highly generic with better performance across different prediction tasks.

cs.LG

Nanoscale compositional evolution in complex oxide based resistive memories

Functional oxides based resistive memories are recognized as potential candidate for the next-generation high density data storage and neuromorphic applications. Fundamental understanding of the compositional changes in the functional oxides is required to tune the resistive switching characteristics for enhanced memory performance. Herein, we present the micro/nano-structural and compositional changes induced in a resistive oxide memory during resistive switching. Oxygen deficient amorphous chromium doped strontium titanate (Cr:$a$-SrTiO$_{3-x}$) based resistance change memories are fabricated in a Ti/Cr:$a$-SrTiO$_{3-x}$ heterostructure and subjected to different biasing conditions to set memory states. Transmission electron microscope based cross-sectional analyses of the memory devices in different memory states shows that the micro/nano-structural changes in amorphous complex oxide and associated redox processes define the resistive switching behavior. These experimental results provide insights and supporting material for Ref. [1].

cond-mat.mtrl-sci

High order synaptic learning in neuro-mimicking resistive memories

Memristors have demonstrated immense potential as building blocks in future adaptive neuromorphic architectures. Recently, there has been focus on emulating specific synaptic functions of the mammalian nervous system by either tailoring the functional oxides or engineering the external programming hardware. However, high device-to-device variability in memristors induced by the electroforming process and complicated programming hardware are among the key challenges that hinder achieving biomimetic neuromorphic networks. Here, an electroforming-free and complementary metal oxide semiconductor (CMOS)-compatible memristor based on oxygen-deficient SrTiO$_{3-x}$ (STO$_x$) is reported to imitate synaptic learning rules. Through spectroscopic and cross-sectional transmission electron microscopic analyses, electroforming-free characteristics are attributed to the bandgap reduction of STO$_x$ by the formation of oxygen vacancies. The potential of such memristors to behave as artificial synapses is demonstrated by successfully implementing high order time- and rate-dependent synaptic learning rules. Also, a simple hybrid CMOS-memristor approach is presented to implement a variety of synaptic learning rules. Results are benchmarked against biological measurements form hippocampal and visual cortices with good agreement. This demonstration is a step towards the realization of large scale adaptive neuromorphic computation and networks.

cond-mat.dis-nn

Absence of Morphotropic Phase Boundary Effects in BiFeO3-PbTiO3 Thin Films Grown via a Chemical Multilayer Deposition Method

Here, we report the unusual behaviour shown by the (BiFeO3)1-x-(PbTiO3)x (BF-xPT) films prepared using a multilayer deposition approach by chemical solution deposition method. Thin film samples of various compositions were prepared by depositing several bilayers of BF and PT precursors by varying the BF or PT layer thicknesses. X-ray diffraction showed that final samples of all compositions show mixing of the two compounds resulting in a single phase mixture, also confirmed by transmission electron microscopy. In contrast to bulk equilibrium compositions, our samples show a monoclinic (MA type) structure suggesting disappearance of morphotropic phase boundary (MPB) about x = 0.30 as observed in the bulk. This is accompanied by the lack of any enhancement of remnant polarization at MPB as shown by the ferroelectric measurements. Magnetic measurements show that the magnetization of the samples increases with increasing BF content. Significant magnetization of the samples indicates melting of spin spirals in the BF-xPT arising from random distribution of iron atoms across the film. Absence of Fe2+ ions in the films was corroborated by X-ray photoelectron spectroscopy measurements. The results illustrate that used thin film processing methodology significantly changes the structural evolution in contrast to predictions from the equilibrium phase diagram as well as modify the functional characteristics of BP-xPT system dramatically.

cond-mat.mtrl-sci