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Viren Tyagi

Publications and source records attributed to Viren Tyagi.

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Operando Raman probing of mode selective electron phonon coupling in two dimensional halide perovskites

Electron phonon coupling governs charge transport, carrier relaxation, and polaron formation in halide perovskites, yet its microscopic origin in low dimensional systems remains poorly understood. Here, we combine operando, bias dependent Raman spectroscopy with density functional theory (DFT) calculations to directly probe carrier lattice interactions in two-dimensional Ruddlesden Popper perovskites,(PEA)$_2$PbI$_4$ and its fluorinated analogue, (PEA-F)$_2$PbI$_4$. Under applied electric fields, both systems exhibit mode-selective Raman linewidth broadening predominantly near 100 cm$^{-1}$, whereas other phonon modes remain largely unaffected, revealing highly selective coupling between injected carriers and specific lattice vibrations. DFT calculations identify these modes as hybrid organic inorganic vibrations involving coupled motion of the organic spacer and symmetric Pb I equatorial stretching, rather than purely inorganic phonons. Fluorination fundamentally reconstructs the vibrational landscape by modifying molecular packing, crystal symmetry, and organic inorganic coupling, resulting in changes to the phonon density of states, longer phonon lifetimes, and an enhanced carrier mediated lattice response. Notably, electrical bias produces opposite phonon lifetime evolution in thin films and single crystals: the phonon lifetime decreases by approximately 17 to 22% in thin films but increases 20 to 26% in single crystals. These contrasting responses demonstrate that structural order plays a fundamental role in determining carrier phonon interactions and phonon relaxation pathways in two-dimensional halide perovskites.

cond-mat.mtrl-sci

A Unified microscopic picture of cation and anion migration in MAPbI$_3$

Passivating defects and restricting defect mobilities in halide perovskites to increase device lifetimes has become a main field of research. Modeling structure and mobility of point defects is an essential contribution to this endeavor. We employ molecular dynamics, based on neural network potentials trained on density functional theory data, to model ion migration in MAPbI$_3$ triggered by I and MA vacancies or interstitials. Most of these species diffuse rapidly at room temperature, with migration barriers between 0.15 and 0.20 eV. MA interstitials are highly mobile despite their molecular nature, owing to a concerted migration mechanism involving multiple MA ions. No evidence of MA vacancy migration is obtained. Whereas diffusion of I-related defects appreciably depends on their charge state, diffusion of MA defects does not. These results revise the conventional picture of ion transport in hybrid perovskites and highlight the role of collective molecular motion in enabling fast ionic migration.

cond-mat.mtrl-sci

Halide diffusion in mixed-halide perovskites and heterojunctions

Migration of halide defects guides ion transport in metal halide perovskites and controls the kinetics of halide mixing and phase separation. We study the diffusion of halide vacancies and interstitials in \ce{CsPb(I_{x}Br_{1-x})_{3}} and \ce{CsPbI_{3}}/\ce{CsPbBr_{3}} heterojunctions by molecular dynamics simulations using neural network potentials trained on density functional theory calculations. We observe enhanced diffusion of both vacancies and interstitials in the mixed halide compounds compared to the single halide ones, as well as a difference in mobility between Br and I ions in the mixed compound. Diffusion across heterojunctions is governed by the interface structure, where a Br-rich interface blocks migration of vacancies in particular, but an I-rich interface is permeable.

cond-mat.mtrl-sci

Tracing Ion Migration in Halide Perovskites with Machine Learned Force Fields

Halide perovskite optoelectronic devices suffer from chemical degradation and current-voltage hysteresis induced by migration of highly mobile charged defects. Atomic scale molecular dynamics simulations can capture the motion of these ionic defects, but classical force fields are too inflexible to describe their dynamical charge states. Using CsPbI3 as a case study, we train machine learned force fields from density functional theory calculations and study the diffusion of charged halide interstitial and vacancy defects in bulk CsPbI3. We find that negative iodide interstitials and positive iodide vacancies, the most stable charge states for their respective defect type, migrate at similar rates at room temperature. Neutral interstitials are faster, but neutral vacancies are one order of magnitude slower. Oppositely charged interstitials and vacancies, as they can occur in device operation or reverse bias conditions, are significantly slower and can be considered relatively immobile.

cond-mat.mtrl-sci