Total Ionizing Dose Effects on CMOS Image Sensor for the ULTRASAT Space Mission
ULTRASAT (ULtraviolet TRansient Astronomy SATellite) is a wide-angle space telescope that will perform deep time-resolved surveys in the near-ultraviolet spectrum. ULTRASAT is a space mission led by the Weizmann Institute of Science and the Israel Space Agency and is planned for launch in 2025. The camera implements backside-illuminated, stitched pixel sensors. The pixel has a dual-conversion-gain 4T architecture, with a pitch of $9.5$ $μm$ and is produced in a $180$ $nm$ process by Tower Semiconductor. Before the final sensor was available for testing, test sensors provided by Tower were used to gain first insights into the pixel's radiation tolerance. One of the main contributions to sensor degradation due to radiation for the ULTRASAT mission is Total Ionizing Dose (TID). TID measurements on the test sensors have been performed with a Co-60 gamma source at Helmholz Zentrum Berlin and CC-60 facility at CERN and preliminary results are presented.