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Vladan Stevanović

Publications and source records attributed to Vladan Stevanović.

25 records · Page 2Linked to original sources

Large Piezoelectric Response of van der Waals Layered Solids

The bulk piezoelectric response, as measured by the piezoelectric modulus tensor (\textbf{d}), is determined by a combination of charge redistribution due to strain and the amount of strain produced by the application of stress (stiffness). Motivated by the notion that less stiff materials could exhibit large piezoelectric responses, herein we investigate the piezoelectric modulus of van der Waals-bonded quasi-2D ionic compounds using first-principles calculations. From a pool of 869 known binary and ternary quasi-2D materials, we have identified 135 non-centrosymmetric crystals of which 48 systems are found to have \textbf{d} components larger than the longitudinal piezoelectric modulus of AlN (a common piezoelectric for resonators), and three systems with the response greater than that of PbTiO$_3$, which is among the materials with largest known piezoelectric modulus. None of the identified materials have previously been considered for piezoelectric applications. Furthermore, we find that large \textbf{d} components always couple to the deformations (shearing or axial) of van der Waals "gaps" between the layers and are indeed enabled by the weak intra-layer interactions.

cond-mat.mtrl-sci↗

Metastable rocksalt ZnO is $p$-type dopable

Despite decades of efforts, achieving $p$-type conductivity in the wide band gap ZnO in its ground-state wurtzite structure continues to be a challenge. Here we detail how $p$-type ZnO can be realized in the metastable, high-pressure rocksalt phase (also wide-gap) with Li as an external dopant. Using modern first-principles defect theory, we predict Li to dope the rocksalt phase $p$-type by preferentially substituting for Zn and introducing shallow acceptor levels. Formation of compensating donors like interstitial Li and/or hydrogen, ubiqutous in the wurtzite phase, is inhibited by the close-packed nature of the rocksalt structure, which also exhibits relatively high absolute valence band edge that promotes low hole effective mass and hole delocalization. Resulting concentrations of free holes are predicted to exceed $\sim10^{19}$ cm$^{-3}$ under O-rich synthesis conditions while under O-poor conditions the system remains $n$-type dopable. In addition to revealing compelling opportunities offered by the metastable rocksalt structure in realizing a long-sought $p$-type ZnO our results present polymorphism as a promising route to overcoming strong doping asymmetry of wide-band gap oxides.

cond-mat.mtrl-sci↗

Enhanced piezoelectric response of AlN via CrN alloying

Since AlN has emerged as an important piezoelectric material for a wide variety of applications, efforts have been made to increase its piezoelectric response via alloying with transition metals that can substitute for Al in the wurtzite lattice. Herein, we report density functional theory calculations of structure and properties of the Cr-AlN system for Cr concentrations ranging past the wurtzite-rocksalt transition point. By studying the different contributions to the longitudinal piezoelectric coefficient, we propose that the physical origin of the enhanced piezoelectricity in Cr$_x$Al$_{1-x}$N alloys is the increase of the internal parameter $u$ of the wurtzite structure upon substitution of Al with the larger Cr ions. Among a set of wurtzite-structured materials, we have found that Cr-AlN has the most sensitive piezoelectric coefficient with respect to alloying concentration. Based on these results, we propose that Cr-AlN is a viable piezoelectric material whose properties can be tuned via Cr composition; we support this proposal by combinatorial synthesis experiments, which show that Cr can be incorporated in the AlN lattice up to 30\% before a detectable transition to rocksalt occurs. At this Cr content, the piezoelectric modulus $d_{33}$ is approximately four times larger than that of pure AlN. This finding, combined with the relative ease of synthesis, may propel Cr-AlN as the prime piezoelectric material for applications such as resonators and acoustic wave generators.

cond-mat.mtrl-sci↗

Critical role of electronic correlations in determining crystal structure of transition metal compounds

The choice that a solid system "makes" when adopting a crystal structure (stable or metastable) is ultimately governed by the interactions between electrons forming chemical bonds. By analyzing 6 prototypical binary transition-metal compounds we demonstrate here that the orbitally-selective strong $d$-electron correlations influence dramatically the behavior of the energy as a function of the spatial arrangements of the atoms. Remarkably, we find that the main qualitative features of this complex behavior can be traced back to simple electrostatics, i.e., to the fact that the strong $d$-electron correlations influence substantially the charge transfer mechanism, which, in turn, controls the electrostatic interactions. This result advances our understanding of the influence of strong correlations on the crystal structure, opens a new avenue for extending structure prediction methodologies to strongly correlated materials, and paves the way for predicting and studying metastability and polymorphism in these systems.

cond-mat.str-el↗

Tuning the piezoelectric and mechanical properties of the AlN system via alloying with YN and BN

Recent advances in microelectromechanical systems often require multifunctional materials, which are designed so as to optimize more than one property. Using density functional theory calculations for alloyed nitride systems, we illustrate how co-alloying a piezoelectric material (AlN) with different nitrides helps tune both its piezoelectric and mechanical properties simultaneously. Wurtzite AlN-YN alloys display increased piezoelectric response with YN concentration, accompanied by mechanical softening along the crystallographic c direction. Both effects increase the electromechanical coupling coefficients relevant for transducers and actuators. Resonator applications, however, require superior stiffness, thus leading to the need to decouple the increased piezoelectric response from a softened lattice. We show that co-alloying of AlN with YN and BN results in improved elastic properties while retaining most of the piezoelectric enhancements from YN alloying. This finding may lead to new avenues for tuning the design properties of piezoelectrics through composition-property maps. Keywords: piezoelectricity, electromechanical coupling, density functional theory, co-alloying

cond-mat.mtrl-sci↗

Solar energy conversion properties and defect physics of ZnSiP$_2$

Implementation of an optically active material on silicon has been a persistent technological challenge. For tandem photovoltaics using a Si bottom cell, as well as for other optoelectronic applications, there has been a longstanding need for optically active, wide band gap materials that can be integrated with Si. ZnSiP$_2$ is a stable, wide band gap (2.1 eV) material that is lattice matched with silicon and comprised of inexpensive elements. As we show in this paper, it is also a defect-tolerant material. Here, we report the first ZnSiP$_2$ photovoltaic device. We show that ZnSiP$_2$ has excellent photoresponse and high open circuit voltage of 1.3 V, as measured in a photoelectrochemical configuration. The high voltage and low band gap-voltage offset are on par with much more mature wide band gap III-V materials. Photoluminescence data combined with theoretical defect calculations illuminate the defect physics underlying this high voltage, showing that the intrinsic defects in ZnSiP$_2$ are shallow and the minority carrier lifetime is 7 ns. These favorable results encourage the development of ZnSiP$_2$ and related materials as photovoltaic absorber materials.

cond-mat.mtrl-sci↗

Identifying defect-tolerant semiconductors with high minority carrier lifetimes: Beyond hybrid lead halide perovskites

The emergence of methyl-ammonium lead halide (MAPbX3) perovskites motivates the identification of unique properties giving rise to exceptional bulk transport properties, and identifying future materials with similar properties. Here, we propose that this "defect tolerance" emerges from fundamental electronic structure properties, including the orbital character of the conduction and valence band extrema, the effective masses, and the static dielectric constant. We use MaterialsProject.org searches and detailed electronic-structure calculations to demonstrate these properties in other materials than MAPbX3. This framework of materials discovery may be applied more broadly, to accelerate discovery of new semiconductors based on emerging understanding of recent successes.

cond-mat.mtrl-sci↗