arXiv subjects

Vladimir A. Sablikov

Publications and source records attributed to Vladimir A. Sablikov.

At least 19 recordsLinked to original sources

arXiv2026

Interband plasmons due to Mexican hat dispersion in two-dimensional materials with inverted bands

Two-dimensional topological materials with Mexican-hat dispersion exhibit numerous nontrivial features, such as double-valued isoenergetic contours in k-space, strong mixing of electron and hole states, a van Hove singularity in the density of states, and specific quantum geometric properties. We find that, due to these features, Mexican-hat dispersion significantly strengthens interband plasmons, reduces their damping, and gives rise to an additional branch of the plasmon spectrum when electron-hole symmetry is broken. The plasmon spectra are limited to a finite range of the wave vector, the boundaries of which depend on the strength of the electron-electron interaction. We also reveal a relationship between the features of the plasmon spectrum and singularities of the joint density of states with a finite plasmon wave vector q, as well as features of the interband quantum metric, which also depend on q.

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arXiv2026

Spin Hall effect in two-dimensional materials with inverted bands and Mexican-hat dispersion

We study the spin Hall effect in two-dimensional topological insulators with "Mexican hat" dispersion and a ring-shaped Fermi surface which are formed due to the band inversion. Electron transitions between different isoenergetic contours and the quantum metric of band states play an important role in the transport properties of such materials, since they largely determine the spatial distribution of the electron charges screening the impurity potential and the scattering probability [Phys.B, 719, 417942 (2025)]. Here we study a spin-dependent skew scattering, which is enabled by the second-order scattering processes, and show that the extrinsic spin-Hall current (SHC) can significantly exceed the intrinsic SHC arising from the Berry curvature. Furthermore, due to Mexican-hat dispersion, the SHC exhibits a very unusual dependence on the Fermi energy ($E_F$). The extrinsic SHC reaches a maximum at some $E_F$, then decreases with increasing $E_F$ and can even change a sign. This complicated behavior reflects an interplay of energy dependencies of such important factors as probabilities of inter- and intra-contour transitions, as well as different electron velocities in two contours.

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arXiv2025

Charged impurity scattering in two-dimensional topological insulators with Mexican-hat dispersion

Scattering by charged impurities is known to mainly determine transport properties of electrons in modern quantum materials, but it remains poorly studied for materials with Mexican hat dispersion. Due to such nontrivial features as a singular density of states and a ring-shaped Fermi surface, electron-electron interaction and electron transitions between different isoenergetic contours are of key importance in this materials. We show that these factors significantly affect both the spatial profile of the screened potential of Coulomb centers and the dependence of mobility on temperature and electron density. The screened potential is calculated within the random phase approximation. The transport properties are determined without using the usual relaxation time approximation, since the distribution function in energy space is a vector defined by a system of two equations.

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arXiv2025

Negative dynamic conductance of a quantum wire with unscreened Coulomb interaction

Dynamic conductance and time-of-flight current instability in a quantum wire connected to electron reservoirs under DC bias voltage are studied in the absence of a gate screening the Coulomb interaction of electrons. Due to a strong electron-electron interaction, dramatic rearrangements of the charge density distribution and the potential landscape in the wire occur at a sufficiently high DC bias voltage. The applied voltage is screened mainly near the cathode contact, and an almost flat potential profile is established in the most of the wire. Thus, the size of the region of a population inversion of electronic states greatly increases, and the band of wave vectors that form unstable modes of electronic waves significantly reduces. As a result, the conditions for the occurrence of the time-of-flight instability are greatly facilitated and the negative dynamic conductivity increases.

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arXiv2025

Friedel oscillations in two-dimensional materials with inverted bands and Mexican-hat dispersion

We study Friedel oscillations (FOs) in two-dimensional topological materials with Mexican hat band dispersion, which attract great interest due to the bunch of its inherent non-trivial features, including the Van Hove singularity, doubly connected Fermi surface, non-trivial quantum-geometric properties, and the presence of states with negative effective mass. These factors are found to lead to a three-mode structure of the FOs. One of the modes, arising from electron transitions between the Fermi contours, has an unexpectedly large amplitude. The evolution of the amplitudes of all modes with Fermi energy is largely determined by the interplay of three main factors: intra-contour and inter-contour electron transitions, the quantum metric of the basis states, and the electron-electron interaction. We traced the role of each factor in the formation of the FO pattern and identified the corresponding features of the FO evolution.

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arXiv2023

Quasi-bound Electron Pairs in Two-Dimensional Materials with a Mexican-Hat Dispersion

We study quasi-bound states of two electrons that arise in two-dimensional materials with a Mexican-hat dispersion (MHD) at an energy above its central maximum. The width of the resonance of the local density of states created by pairs is determined by the hybridization of atomic orbitals, due to which the MHD is formed. The mechanism of the quasi-bound state formation is due to the fact that effective reduced mass of electrons near the MHD top is negative. An unusual feature of quasi-bound states is that the resonance width can vanish and then they transform into bound states in continuum. We study in detail the quasi-bound states for topological insulators, when the MHD is due to the hybridization of inverted electron and hole bands. In this case, the resonance width is extremely small at weak hybridization. The highest binding energy is achieved for singlet quasi-bound pairs with zero angular number.

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arXiv2023

Two-body problem for two-dimensional electrons in Bernervig-Hughes-Zhang model

We study the two-body problem for two-dimensional electron systems in a symmetrized Bernevig-Hughes-Zhang model which is widely used to describe topological and conventional insulators. The main result is that two interacting electrons can form bound states with the energy in the gap of the band spectrum. The pairing mechanism can be interpreted as the formation of a negative reduced effective mass of two electrons. The problem is complicated because the relative motion of the electrons is coupled to the center-of-mass motion. We consider the case of zero total momentum. Detail calculations are carried out for the repulsive interaction potential of steplike form. The states are classified according to their spin structure and two-particle basis functions that form a given bound state. We analyze the spectra and electronic structure of the bound states in the case of both topological and trivial phases and especially focus on effects originating from the band inversion and the coupling of the electron and hole bands. In the trivial phase and the topological phase with the large coupling parameter $a$, the bound state spectra are qualitatively similar. However, when $a$ is less a certain value, the situation changes dramatically. In the topological phase, new states arise with a higher binding energy at lower interaction potential, which evidences that the band inversion can favor pairing the electrons.

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arXiv2023

Electron correlations due to pair spin-orbit interaction in 2D electron systems

We show that the pair spin-orbit interaction (PSOI) created by the Coulomb fields of interacting electrons leads to the appearance of an unconventional correlated electronic state in two-dimensional materials with the large Rashba effect. The effect manifests itself at sufficiently strong PSOI as a sharp peak in the structure factor, indicating a tendency to form a striped structure with a spatial scale determined by the competition between the Coulomb repulsion and the PSOI-induced attraction of electrons. Above the critical value of PSOI, the system becomes unstable with respect to the charge density fluctuations on this scale.

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arXiv2023

Spin-dependent electron-electron interaction in Rashba materials

We review the effects of the pair spin-orbit interaction (PSOI) in Rashba materials. The PSOI is the electron-electron interaction component that depends on the spin and momentum of the electrons. Being produced by the Coulomb fields of interacting electrons, it exists already in vacuum, but becomes orders of magnitude larger in materials with the giant Rashba effect. The main nontrivial feature of the PSOI is that it is attractive for electrons in certain spin configurations tied to their momentum and competes with the Coulomb repulsion of the electrons. Under certain conditions attainable in modern low-dimensional structures the PSOI prevails. The resulting attraction between electrons leads to the formation of bound electron pairs, the binding energy of which can be controlled by electrical means. In many-electron systems the PSOI results in the instabilities of the uniform ground state with respect to the density fluctuations, which develop on different spatial scales, depending on the geometry of the electric fields that produce the PSOI. If the PSOI is not too strong the electronic system is stable, but its collective excitations reveal the highly unusual spin-charge structure and spectrum, which manifest themselves in the frequency dependence of the dynamic conductivity.

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arXiv2022

Electron pairs bound by the spin-orbit interaction in 2D gated Rashba materials with two-band spectrum

We show that the bound electron pairs (BEPs) emerge in two-dimensional gated Rashba materials owing to the interplay of the pair spin-orbit interaction, produced by the Coulomb fields of interacting electrons, and the peculiarities of the band structure giving rise to a negative reduced mass of the interacting electrons. Our consideration is based on the four-band Bernevig-Hughes-Zhang model with the Rashba spin-orbit interaction created by the charges on the gate. The binding energy of the BEP varies with the gate voltage in a wide range across the entire width of the two-particle energy gap. Although the spin-orbit interaction destroys the spin quantization, the BEPs have a magnetic moment, which is created mainly by the orbital motion of the electrons and tuned by the gate voltage.

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arXiv2022

Quasi-bound States and Resonant Skew Scattering in Two-Dimensional Materials with a Mexican-Hat Dispersion

Mexican-hat dispersion of band electrons in two-dimensional materials attracts a lot of interest, mainly due to the Van Hove singularity of the density of states near the band edge. In this paper, we show that there is one more feature of such a dispersion, which also leads to nontrivial effects. It consists in the fact that the sign of the effective mass in the momentum space near the central extremum is opposite to the sign of the mass outside this region. For this reason, any localized potential that repels quasiparticles in the outer region attracts quasiparticles in the central region and thereby creates quasi-bound states. We study these states in the case when the Mexican-hat dispersion is formed due to the hybridization of the inverted electron and hole bands, and the potential is created by a point defect. The energy and width of the resonance of the local density of states corresponding to a quasi-bound state are found, and it is shown that, under certain conditions, a quasi-bound state can transform into a bound state in a continuum of band states. The presence of quasi-bound states leads to nontrivial effects in the spin-dependent scattering of electrons. Due to the quasi-bound state, the skew scattering is strongly enhanced for electrons with energy near the resonance, and the skewness angle varies over a wide range depending on the energy. In addition, in a certain energy range, a nontrivial effect of scattering suppression appears in the direction opposite to the skewness angle.

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arXiv2022

Effective Mass of Bound Electron Pairs in Two-Dimensional Materials with a Gapped Band Spectrum

Bound electron pairs formed due to the peculiarities of the band dispersion of electrons in crystals attract much interest because they can carry charge and spin even in the absence of band conductivity. However, such an important parameter of bound pairs as the effective mass is still poorly understood. We carry out this study for materials described by the Bernevig-Hughes-Zhang model in the electron-hole symmetric case and find a clear relationship between the effective mass and the energy of a bound pair at rest. The dependence of mass on energy has a specific form for each of different types of pairs, but a common feature is the change of the mass sign when energy passes through the middle of the band gap. The sign is negative when the energy is in the lower half of the gap, and positive in the upper half.

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arXiv2021

Long-range perturbation of helical edge states by nonmagnetic defects in two-dimensional topological insulators

We study the electronic states that are formed due to the tunnel coupling between helical edge states (HESs) and bound states of nonmagnetic point defects in two-dimensional topological insulators in the general case of broken axial spin symmetry. It is found that the coupling of HESs and a single defect leads to the formation of composite HESs composed of the bound states and a set of the conventional HESs. Their spectral density near the defect has a resonance shifted relative to the energy level of the bound state. But of most importance is a long-range perturbation of the HESs around the defect, which is a cloud consisting of both Kramers partners of conventional edge states. Therefore each of the composite HESs contains both the right- and left-moving conventional HESs. The amplitude of this perturbation decreases inversely with the distance from the defect. In a system of many defects, this perturbation leads to a long-range coupling between bound states of different defects mediated by the HESs and causes amazing effects. We study these effects for a two-defect system where the proposed mechanism of indirect coupling leads to a splitting of the resonances of isolated defects even if the distance between them is very large. As a result an asymmetric structure of two-peak resonance arises that very unusually changes with the distance between the defects.

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arXiv2021

Conductance suppression by nonmagnetic point defects in helical edge channels of two-dimensional topological insulators

We study backscattering of electrons and conductance suppression in a helical edge channel in two-dimensional topological insulators with broken axial spin symmetry in the presence of nonmagnetic point defects that create bound states. In this system the tunneling coupling of the edge and bound states results in the formation of composite helical edge states in which all four partners of both Kramers pairs of the conventional helical edge states and bound states are mixed. The backscattering is considered as a result of inelastic two-particle scattering of electrons, which are in these composite states. Within this approach we find that sufficiently strong backscattering occurs even if the defect creates only one energy level. The effect is caused by electron transitions between the composite states with energy near the bound state level. We study the deviation from the quantized conductance due to scattering by a single defect as a function of temperature and Fermi level. The results are generalized to the case of scattering by many different defects with energy levels distributed over the band gap. In this case, the conductance deviation turns out to be quite strong and comparable with experiment even at a sufficiently low density of defects. Interestingly, under certain conditions, the temperature dependence of the conductance deviation becomes very weak over a wide temperature range.

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arXiv2020

The Coulomb impurity in 2D materials with strong spin-orbit interaction

We show that the spin-orbit interaction (SOI) produced by the Coulomb fields of charged impurities provides an efficient mechanism for the bound states formation. The mechanism can be realized in 2D materials with sufficiently strong Rashba SOI provided that the impurity locally breaks the structure inversion symmetry in the direction normal to the layer.

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arXiv2020

Radiative decay of bound electron pairs into unbound interacting electrons in 2D materials with two-band spectrum

Bound electron pairs (BEPs) arising due to peculiarities of the band structure of topologically nontrivial materials are of interest as charge and spin carriers with energies in the band gap. Moreover, being composite bosons, BEPs can also possess completely unusual collective properties. In this regard, of highest importance is the problem of their decay time. The processes of radiative decay of BEPs are studied, considering the electron-electron interaction in the final state, into which the BEPs decay. It is found that the decay time of singlet BEPs lies in the nanosecond range. The radiative decay of triplet BEPs is impossible.

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arXiv2020

The spin-orbit mechanism of electron pairing in quantum wires

We solve a two-body problem for electrons in a one-dimensional system to show that two-electron bound states can arise as a result of the image-potential-induced spin-orbit interaction (iSOI). The iSOI contributes an attractive component to the electron-electron interaction Hamiltonian that competes with the Coulomb repulsion and overcomes it under certain conditions. We find that there exist two distinct types of two-electron bound states, depending on the type of the motion that forms the iSOI: the relative motion or the motion of the electron pair as a whole. The binding energy lies in the meV range for realistic material parameters and is tunable by the gate potential.

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arXiv2020

Bound electron pairs formed by the spin-orbit interaction in 2D gated structures

We explore the bound electron pairs (BEPs) arising due to the pair spin-orbit interaction (PSOI) in two-dimensional structures with a gate that can allow the BEPs to be manipulated. The gate breaks the in-plane reflection symmetry of the pair Coulomb field and creates a one-particle Rashba spin-orbit interaction. We find that the normal component of the electric field substantially affects the BEPs but the key role in forming the BEPs belongs to the in-plane component. The ground state of a BEP with zero total momentum, which is doubly degenerate in the absence of the gate, splits into two states. One of them is tunable by varying the gate voltage whereas the other is on the contrary robust. The tunable BEP has a higher binding energy which grows as the gate voltage increases, with its orbital and spin structure changing continuously. At the large negative voltage the tunable BEP decays. The orbital and spin structure of the robust BEP does not depend on the gate voltage. Its energy level crosses the conduction band bottom at high gate voltage of any polarity, but the robust BEP remains bound and localized even when in continuum.

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