arXiv subjects

Vladimir A. Yuryev

Publications and source records attributed to Vladimir A. Yuryev.

At least 19 recordsLinked to original sources

arXiv2026

High-temperature instability of artificial cuprorivaite: a study using thermal analysis, X-ray powder diffractometry and polarized light microscopy

CaCuSi$_4$O$_{10}$ powder was studied by differential scanning calorimetry and thermogravimetry methods in the range from room temperature to 1450$\,^{\circ}$C at heating and cooling rates of 20$\,^{\circ}$C/min. The process of decomposition of cuprorivaite, the composition and transformations of its decomposition products during successive heat treatments were also studied by powder X-ray diffraction and polarization optical microscopy techniques. It was found that CaCuSi$_4$O$_{10}$ starts to decompose by incongruent melting at a temperature of about 1020$\,^{\circ}$C, with the minimum of the endothermic DSC peak associated with this process being at 1064.4$\,^{\circ}$C. CaCuSi$_4$O$_{10}$ decomposes irreversibly and subsequent cyclic annealings up to a temperature of 1450$\,^{\circ}$C at heating and cooling rates of 20$\,^{\circ}$C/min do not cause its re-synthesis. CaCuSi$_4$O$_{10}$ transforms into a two-phase system consisting of acicular crystals of monoclinic tridymite fused with green glass with the composition CuO$\,-\,$Cu$_2$O$\,-\,$CaO$\,-\,$SiO$_2$, with the weight ratio of tridymite to glass being about $12:13$, as a result of two successive annealings up to the temperature of 1450$\,^{\circ}$C.

cond-mat.mtrl-sci↗

arXiv2024

Extended defects as a source of phonon confinement in polycrystalline Si and Ge films

We present Raman spectroscopy of the polycrystalline Si and Ge films deposited by molecular beam deposition on a dielectric substrate. The Raman study has been made using lasers with different wavelengths. Structural properties of the poly-films have been studied by XRD and TEM. The Raman spectra are characterized by appearance of the additional wide peaks around 500 cm$^{-1}$ and 290 cm$^{-1}$ in the main vibrational bands of TO(c-Si) and TO(c-Ge) phonons, respectively. It is shown that these peaks correspond to scattering in grain boundary area. For the poly-Si films, both a downward shift and an asymmetrical broadening of the vibrational band of TO(c-Si) near 520 cm$^{-1}$ are observed, whereas there is only a symmetric broadening in the spectra of poly-Ge. The Raman line shape has been modeled within the framework of the phonon confinement theory taking into account the sizes of coherent scattering domains obtained using XRD. The model includes a symmetrical band broadening observed in polycrystalline films. It is shown that confinement of phonon propagation might be in the poly-Si films. The phonon dispersion and the density of phonon states have been simulated using density functional theory. It has been found that phonon confinement relates to grain boundaries rather than other extended defects such as twins (multiple twins, twin boundaries), the appearance of which does not lead to significant changes in phonon dispersion and density of phonon states.

cond-mat.mtrl-sci↗

arXiv2023

Thermal-fluctuation mechanism of long-term corrosion of glass caused by internal stress: processes of depolymerization, impurity migration and fracturing on an atomic scale

Long-term corrosion of glass is studied using polarising light microscopy, FTIR and SEM including EDX and elemental mapping. Early 19th century beads made of lead-potassium glass are the object of the study. Non-uniformly distributed internal stresses were introduced into the studied glass during bead manufacturing. Corrosion of 19th century bead glass has been shown to comprise several mutually connected processes developing in parallel and intensifying one another. These processes are the depolymerization of glass, the directed migration of alkali-metal impurities and local glass leaching, and the nucleation of micro discontinuities followed by the formation of micro cracks and their gradual growth. In course of time, their cumulative and apparently synergistic effect results in glass fracturing terminated with bead crumbling into tiny discoloured particles. All these phenomena are controlled by the internal stress originated from the bead production process. Thus, the phenomenon of stressed bead glass corrosion is the process of the internal stress relaxation in glass through the nucleation and growth of cracks, which lasts for many decades at room temperature. It is dramatically accelerated when beads are heat treated. Annealing at 300°C for 15 min. is sufficient for artificial ageing of initially intact beads. The corrosion has been observed to occur in glass even if beads are kept in well-controlled museum environment. The local thermal-fluctuation mechanism is proposed to account for the corrosion phenomenon on an atomic scale. The approach based on the thermal-fluctuation mechanism is applicable to describe degradation and destruction processes in various solid substances and composite materials under stress; this approach enables understanding the phenomena of formation and degradation of nanostructures, e. g., heterostructures with quantum wells or quantum dots.

cond-mat.mtrl-sci↗

arXiv2022

Evolution of Ge wetting layers growing on smooth and rough Si (001) surfaces: isolated {105} facets as a kinetic factor of stress relaxation

The results of STM and RHEED studies of a thin Ge film grown on the Si/Si(001) epitaxial layers with different surface relief are presented. Process of the partial stress relaxation was accompanied by changes in the surface structure of the Ge wetting layer. Besides the well-known sequence of surface reconstructions ($2 \times 1 \rightarrow 2 \times N \rightarrow M \times N$ patches) and hut clusters faceted with {105} planes, the formation of isolated {105} planes, which faceted the edges of $M \times N$ patches, has been observed owing to the deposition of Ge on a rough Si/Si (001) surface. A model of the isolated {105} facet formation has been proposed based on the assumption that the mutual arrangement of the monoatomic steps on the initial Si surface promotes the wetting layer formation with the inhomogeneously distributed thickness that results in the appearance of $M \times N$ patches partially surrounded by deeper trenches than those observed in the usual Ge wetting layer grown on the smooth Si(001) surface. Isolated {105} facets are an inherent part of the Ge wetting layer structure and their formation decreases the surface energy of the Ge wetting layer.

cond-mat.mtrl-sci↗

arXiv2021

Influence of the thickness of Si and Ge films deposited on Si$_3$N$_4$/SiO$_2$/Si substrates on their structure and diffusion of hydrogen atoms from Si$_3$N$_4$ layers

The results of RHEED, FTIR and Raman spectroscopy study of silicon and germanium films with the thickness up to 200 nm grown from molecular beams on dielectric Si$_3$N$_4$/SiO$_2$/Si(001) substrates are presented. Noticeable changes of the intensity of the N$-$H and Si$-$N absorption bands have been observed in the IR absorbance spectra as a result of the deposition of the silicon and germanium films. The thicker was the deposited film, the more considerable were the decrease of N$-$H absorption band intensity and the increase in that of the Si$-$N band. This tendency has been observed during the growth of both amorphous and polycrystalline Si or Ge films. The reduction of IR absorption at the band assigned to the N$-$H bond vibration is explained by breaking of these bonds followed by the diffusion of the hydrogen atoms from the Si$_3$N$_4$ layer into the growing film of silicon or germanium. The effect of the deposited film thickness on the diffusion of hydrogen is discussed within a model of the diffusion of hydrogen atoms controlled by the difference in chemical potentials of hydrogen atoms in the dielectric Si$_3$N$_4$ layer and the growing silicon or germanium film. Hydrogen atoms escape from the Si$_3$N$_4$ layer only during the deposition of a Si or Ge film when its thickness gradually grows. The interruption of the film growth stops the migration of hydrogen atoms into the film because of the decline in the chemical potential difference.

cond-mat.mtrl-sci↗

arXiv2021

Peculiarities and evolution of Raman spectra of multilayer Ge/Si(001) heterostructures containing arrays of low-temperature MBE-grown Ge quantum dots of different size and number density: Experimental studies and numerical simulations

Ge/Si(001) multilayer heterostructures containing arrays of low-temperature self-assembled Ge quantum dots and very thin Si$_x$Ge$_{1-x}$ layers of varying composition and complex geometry have been studied using Raman spectroscopy and scanning tunneling microscopy. The dependence of Raman spectra on the effective thickness of deposited Ge layers has been investigated in detail in the range from 4 to 18 Å. The position and shape of both Ge and SiGe vibrational modes are of great interest since they are closely related to the strain and composition of the material that plays a role of active component in perspective optoelectronic devices based on such structures. In this work, we present an explanation for some peculiar features of Raman spectra, which makes it possible to control the quality of the grown heterostructures more effectively. A dramatic increase of intensity of both the Ge$-$Ge and Si$-$Ge bands for the structure containing Ge layers of 10 Å and anomalous shift and broadening of the Si$-$Ge band for structures comprising Ge layers of 8 and 9 Å thick were observed. In our model, the anomalous behavior of the Raman spectra with the change of thickness of deposited Ge is connected with the flatness of Ge layers as well as transitional SiGe domains formed via the stress-induced diffusion from {105} facets of quantum dots. The conclusions are supported by the STM studies and the numerical calculations.

cond-mat.mtrl-sci↗

arXiv2021

Diffusion processes in germanium and silicon films grown on Si$_3$N$_4$ substrates

In this article, the results of investigation of processes occurring during the molecular-beam deposition of germanium layers on Si$_3$N$_4$ dielectric substrates within a wide range of the Ge film growth temperatures (30 to 600°C) are presented. The intensity of the IR absorption bands related to the vibrations of the N$-$H and Si$-$N bonds are established to decrease with the increase of the Ge deposition temperature. It appears that this phenomenon cannot be explained only as a thermally activated process. Simultaneously, the peak corresponding to the Ge$-$N vibration bonds emerges in the X-ray photoelectron spectra. We suppose that the deposition of germanium layers on Si3N4 dielectric substrates containing hydrogen atoms causes the diffusion of hydrogen atoms from the dielectric layer into the growing film. The experimental results may be interpreted in terms of a model, according to which the migration of hydrogen atoms from the Si$_3$N$_4$ layer into the growing germanium film is due to the difference in chemical potentials of hydrogen atoms in the dielectric layer and the germanium film. This process initiates the diffusion of germanium atoms in the opposite direction, into the Si$_3$N$_4$ layer, where they connect to free bonds of nitrogen atoms arising due to the escape of hydrogen atoms. The analogous processes occur during the deposition of silicon layers on Si$_3$N$_4$ substrates.

cond-mat.mtrl-sci↗

arXiv2021

Identification of CaCuSi$_4$O$_{10}$ (Egyptian blue) in the "Birch. Spring" painting by Robert Falk (1907) using photoluminescence

We have detected Egyptian blue pigment in the paint layer of the "Birch. Spring" painting by Robert Falk (1907); we have also found this pigment in the paints of the sketch drawn on the canvas back side. This is probably the first discovery of Egyptian blue in a 20th century work of art. We have analyzed a modern commercial Egyptian blue pigment (Kremer) and found it to be suitable as a standard for photoluminescence spectral analysis. The characteristic photoluminescence band of CaCuSi$_4$O$_{10}$ reaches maximum at the wavelength of about 910 nm. The luminescence is efficiently excited by incoherent green or blue light. The study demonstrates that the photoluminescence spectral micro analysis using excitation by incoherent light can be efficiently used for the identification of luminescent pigments in paint layers of artworks.

physics.app-ph↗

arXiv2021

Crystals in the 19th century glass beads

Glass seed beads probably are the most numerous group of art historical glass. From the ancient times to the modern era, glass beads played an essential role in culture, as they were used, e.g., to decorate clothing, religious objects and functional tools, and served as an important good for global trade. The conservation state of items made of glass beads is an actual issue for curators and conservators. Glass, as well known, is often unstable material, so a number of internal and external factors are responsible for chemical and physical processes in glass and on the glass surface. It was noticed that some types of historical 19th century glass beads are subjected to more intense destruction than others. The samples of glass beads of different colours and conservation states were examined by means of SEM-EDX, EBSD, Raman and FTIR microspectroscopy. Research showed that some types of beads are characterized by the presence of nano- and microcrystals in glass, which could be one of the causes of glass destruction. The elemental composition of crystals is different in each case and depends on raw materials and technical components used for glass manufacturing. The structure of crystals was identified by means of EBSD analysis.

physics.app-ph↗

arXiv2020

Low-temperature formation of platinum silicides on polycrystalline silicon

Phase formation and transitions in platinum silicide films on polycrystalline Si in the process of Pt magnetron sputtering and heat treatments at different temperatures are studied using X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and X-ray diffractometry. Phases of amorphous and polycrystalline Pt$_3$Si and Pt$_2$Si are shown to form during the room-temperature Pt deposition on poly-Si beneath the Pt layer. The relaxation of the interfacial film and partial transformation of Pt$_3$Si into Pt$_2$Si occurs as a result of the thermal treatment for 30 minutes in the temperature range from 125 to 300$^{\circ}$C. The Pt$_3$Si and Pt$_2$Si phases crystallize to PtSi due to annealing at the temperatures from 320 to 480$^{\circ}$C for the same time period.

cond-mat.mtrl-sci↗

arXiv2020

The formation of intermediate layers in covered Ge/Si heterostructures with low-temperature quantum dots: a study using high-resolution transmission electron microscopy and Raman spectroscopy

The method of software analysis of high-resolution TEM images using the peak pairs algorithm in combination with Raman spectroscopy was employed to study lattice deformations in Ge/Si(001) structures with low-temperature Ge quantum dots. It was found that the stresses do not spread in a thick Si layer above quantum dots, but completely relax via the formation of a thin boundary layer of mixed composition. However, intermixing of Ge and Si is absent beneath the Ge layer in samples with a Ge coverage of 10 Å. Besides intermixing was not observed at all, both beneath and above the Ge layer, in samples with a Ge coverage of 6 Å or less. This may be due to the predominance of Ge diffusion into the Si matrix from the {105} facets of Ge huts, not from the Ge wetting layer, at low temperatures of the Ge/Si structure deposition. The critical thickness of Si coverage at which the intense stress-induced diffusion takes place is determined to lie in the range from 5 to 8 nm.

cond-mat.mtrl-sci↗

arXiv2019

Cathodoluminescence of CdZnSSe crystals synthesized in 19th century bead glass

The article presents an experimental investigation of band-edge cathodoluminescence of CdZnSSe crystals that nucleated and grew in silicate glass melt during its production. We have studied Zn-rich red glass made for manufacture of seed beads in the 19th century and found it to contain CdZnSSe crystals. Due to colloidal staining using the CdZnSSe crystallites embedded in glass, glass makers were enabled to produce lustrous red glass that, as we presently know, manifests bright luminescence. The CdZnSSe crystallites exhibit intense band-edge cathodoluminescence both at room temperature and at liquid nitrogen temperature. We have found the band-edge cathodoluminescence of these crystals to peak in the range from 2.00 to 2.03 eV at 300 K and from 2.02 to 2.06 eV at 80 K. We have also estimated the value of the band gap derivative d$E_g$/d$T$ in the interval from 80 to 300 K and found it to lie in the range from $-2.5 \times 10^{-4}$ to 0 eV/K. CdZnSSe crystals in glass demonstrate high temperature and temporal stability. The glass-crystal composite on their basis is resistant to the electron-beam irradiation and long-term weathering. Possible applications of this composite in modern technologies, and processes and components that might be used for making glass stained with CdZnSSe in the past are also discussed.

cond-mat.mtrl-sci↗

arXiv2019

Study of deteriorating semiopaque turquoise lead-potassium glass beads at different stages of corrosion using micro-FTIR spectroscopy

Nowadays, a problem of historical beadworks conservation in museum collections is actual more than ever because of fatal corrosion of the 19th century glass beads. Vibrational spectroscopy is a powerful method for investigation of glass, namely, of correlation of the structure-chemical composition. Therefore, Fourier-transform infrared spectroscopy was used for examination of degradation processes in cloudy turquoise glass beads, which in contrast to other color ones deteriorate especially strongly. Micro-X-ray fluorescence spectrometry of samples has shown that lead-potassium glass PbO-K$_2$O-SiO$_2$ with small amount of Cu and Sb was used for manufacture of cloudy turquoise beads. Fourier-transform infrared spectroscopy study of the beads at different stages of glass corrosion was carried out in the range from 200 to 4000 cm$^{-1}$ in the attenuated total reflection mode. In all the spectra, we have observed shifts of two major absorption bands to low-frequency range (~1000 and ~775 cm$^{-1}$) compared to ones typical for amorphous SiO2 (~1100 and 800 cm$^{-1}$, respectively). Such an effect is connected with Pb$^{2+}$ and K$^+$ appending to the glass network. The presence of a weak band at ~1630 cm$^{-1}$ in all the spectra is attributed to the adsorption of H$_2$O. After annealing of the beads, the band disappeared completely in less deteriorated samples and became significantly weaker in more destroyed ones. Based on that we conclude that there is adsorbed molecular water on the beads. However, products of corrosion (e.g., alkali in the form of white crystals or droplets of liquid alkali) were not observed on the glass surface. We have also observed glass depolymerisation in the strongly degraded beads, which is exhibited in domination of the band peaked at ~1000 cm$^{-1}$.

physics.app-ph↗

arXiv2019

Diffusion of hydrogen atoms in silicon layers deposited from molecular beams on dielectric substrates

In the paper, the processes occurring during low-temperature growth of non-hydrogenated amorphous Si and polycrystalline Si films on multilayer Si$_3$N$_4$/SiO$_2$/c-Si substrates from molecular beams under conditions of ultrahigh vacuum are studied in detail. Diffusion of hydrogen atoms from a dielectric layer into the growing film is shown to accompany the growth of a silicon film on a Si$_3$N$_4$ layer deposited by CVD or on a SiO$_2$ layer obtained by thermal oxidation of a silicon wafer. The process of hydrogen migration from the dielectric substrates into the silicon film is studied using FTIR spectroscopy. The reduction of IR absorption at the bands related to the N$-$H bonds vibrations and the increase of IR absorption at the bands relating to the Si$-$N bonds vibrations in IR spectra demonstrate that hydrogen atoms leave Si$_3$N$_4$ layer during Si deposition from a molecular beam. The absorption band assigned to the valence vibrations of the Si$-$H bond at $\sim 2100$ cm$^{-1}$ emerging in IR spectra obtained at samples deposited both on Si$_3$N$_4$ and SiO$_2$ layers indicates the accumulation of hydrogen atoms in silicon films. The difference in chemical potentials of hydrogen atoms in the dielectric layer and the silicon film explains the transfer of hydrogen atoms from the Si$_3$N$_4$ or SiO$_2$ layer into the growing silicon film.

cond-mat.mtrl-sci↗

arXiv2015

Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C

The article presents an experimental study of an issue of whether the formation of arrays of Ge quantum dots on the Si(001) surface is an equilibrium process or it is kinetically controlled. We deposited Ge on Si(001) at the room temperature and explored crystallization of the disordered Ge film as a result of annealing at 600 °C. The experiment has demonstrated that the Ge/Si(001) film formed in the conditions of an isolated system consists of the standard patched wetting layer and large droplike clusters of Ge rather than of huts or domes which appear when a film is grown in a flux of Ge atoms arriving on its surface. We conclude that the growth of the pyramids appearing at temperatures greater than 600 °C is controlled by kinetics rather than thermodynamic equilibrium whereas the wetting layer is an equilibrium structure.

cond-mat.mes-hall↗

arXiv2014

Degradation and destruction of historical blue-green glass beads: A study by microspectroscopy of light transmission

Blue-green historical beads are sometimes referred to as instable ones because of their degradability. At present, the cause of the phenomenon of deterioration of the blue-green beads is unknown. We explore internal microstucture of degrading blue-green historical beads and its evolution in the process of bead deterioration. Investigating transmittance and scattering spectra of visible and near infrared light we observe formation of microscopic internal inhomogeneities with the sizes less than 150 nm in the glass bulk and growth of their density with increase in degree of bead degradation. By means of laser scanning microscopy we also observe numerous microinclusions and microcracks on the cleavage surface of a partially degraded bead. We discuss possible physical factors resulting in destruction of the blue-green beads.

cond-mat.mtrl-sci↗

arXiv2013

On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer

Structural models of growing Ge hut clusters---pyramids and wedges---are proposed on the basis of data of recent STM investigations of nucleation and growth of Ge huts on the Si(001) surface in the process of molecular beam epitaxy. It is shown that extension of a hut base along <110> directions goes non-uniformly during the cluster growth regardless of its shape. Growing pyramids, starting from the second monolayer, pass through cyclic formation of slightly asymmetrical and symmetrical clusters, with symmetrical ones appearing after addition of every fourth terrace. We suppose that only symmetrical configurations of pyramids composed by 2, 6, 10, 14, etc. monolayers over the wetting layer are stable. This might explain less stability of pyramids in comparison with wedges in dense arrays obtained at low Ge deposition temperatures. Possible nucleation processes of pyramids and wedges on wetting layer patches from identical embryos composed by 8 dimers through formation of 1 monolayer high 16-dimer nuclei different only in their symmetry is discussed. Schematics of these processes are presented for both species of huts. It is concluded from precise STM measurements that top layers of WL patches are relaxed when huts nucleate on them.

cond-mat.mtrl-sci↗

arXiv2011

An initial phase of Ge hut array formation at low temperature on Si(001)

We report a direct STM observation of Ge hut array nucleation on the Si(001) surface during ultrahigh vacuum molecular-beam epitaxy at 360C. Nuclei of pyramids and wedges have been observed on the wetting layer MxN patches starting from the coverage of about 5.1 Å (~3.6 ML). Further development of hut arrays consists in simultaneous growth of the formerly appeared clusters and nucleation of new ones resulting in gradual rise of hut number density with increasing surface coverage. Huts nucleate reconstructing the patch surface from the usual c(4x2) or p(2x2) structure to one of two recently described formations composed by epitaxially oriented Ge dimer pairs and chains of four dimers.

cond-mat.mtrl-sci↗