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Vladimir Dyakonov

Publications and source records attributed to Vladimir Dyakonov.

At least 37 records · Page 2Linked to original sources

Coupling spin defects in hexagonal boron nitride to monolithic bullseye cavities

Color centers in hexagonal boron nitride (hBN) are becoming an increasingly important building block for quantum photonic applications. Herein, we demonstrate the efficient coupling of recently discovered spin defects in hBN to purposely designed bullseye cavities. We show that the all monolithic hBN cavity system exhibits an order of magnitude enhancement in the emission of the coupled boron vacancy spin defects. In addition, by comparative finite difference time domain modelling, we shed light on the emission dipole orientation, which has not been experimentally demonstrated at this point. Beyond that, the coupled spin system exhibits an enhanced contrast in optically detected magnetic resonance readout and improved signal to noise ratio. Thus, our experimental results supported by simulations, constitute a first step towards integration of hBN spin defects with photonic resonators for a scalable spin photon interface.

physics.optics↗

Sub-nanoscale Temperature, Magnetic Field and Pressure sensing with Spin Centers in 2D hexagonal Boron Nitride

Spin defects in solid-state materials are strong candidate systems for quantum information technology and sensing applications. Here we explore in details the recently discovered negatively charged boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) and demonstrate their use as atomic scale sensors for temperature, magnetic fields and externally applied pressure. These applications are possible due to the high-spin triplet ground state and bright spin-dependent photoluminescence (PL) of the $V_B^-$. Specifically, we find that the frequency shift in optically detected magnetic resonance (ODMR) measurements is not only sensitive to static magnetic fields, but also to temperature and pressure changes which we relate to crystal lattice parameters. Our work is important for the future use of spin-rich hBN layers as intrinsic sensors in heterostructures of functionalized 2D materials.

cond-mat.mtrl-sci↗

Spin- and Voltage-dependent emission from Intra- and Intermolecular TADF OLEDs

Organic light emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) utilize molecular systems with a small energy splitting between singlet and triplet states. This can either be realized in intramolecular charge transfer states of molecules with near-orthogonal donor and acceptor moieties or in intermolecular exciplex states formed between a suitable combination of individual donor and acceptor materials. Here, we investigate 4,4'-(9H,9'H-[3,3'-bicarbazole]-9,9'-diyl)bis(3-(trifluoromethyl) benzonitrile) (pCNBCzoCF3), which shows intramolecular TADF but can also form exciplex states in combination with 4,4',4''-tris[phenyl(m-tolyl)amino]triphenylamine (m-MTDATA). Orange emitting exciplex-based OLEDs additionally generate a sky-blue emission from the intramolecular emitter with an intensity that can be voltage-controlled. We apply electroluminescence detected magnetic resonance (ELDMR) to study the thermally activated spin-dependent triplet to singlet up-conversion in operating devices. Thereby, we can investigate intermediate excited states involved in OLED operation and derive the corresponding activation energy for both, intra- and intermolecular based TADF. Furthermore, we give a lower estimate for the extent of the triplet wavefunction to be >1.2 nm. Photoluminescence detected magnetic resonance (PLDMR) reveals the population of molecular triplets in optically excited thin films. Overall, our findings allow us to draw a comprehensive picture of the spin-dependent emission from intra- and intermolecular TADF OLEDs.

physics.app-ph↗

Kinetic Modeling of Transient Electroluminescence reveals TTA as Efficiency-Limiting Process in Exciplex-Based TADF OLEDs

Organic light emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) show increased efficiencies due to efficient upconversion of non-emissive triplet states to emissive singlets states via reverse intersystem crossing (RISC). To assess the influence of the characteristic efficiency-enhancing RISC process as well as possible efficiency-limiting effects in operational OLEDs, we performed temperature-dependent measurements of transient electroluminescence (trEL). With kinetic modeling, we quantify and separate the impact of different temperature-dependent depopulation processes and contributions to EL in the established donor:acceptor model system m-MTDATA:3TPYMB. The underlying rate equations adapted for EL measurements on TADF systems include radiative and non-radiative first- and second-order effects. In this way, we are able to evaluate the non-radiative recombination and annihilation processes with respect to their efficiency-limiting effects on these OLEDs. On the one hand, we evaluate the depopulation of intermolecular exciplex triplet states via non-radiative direct triplet decay, RISC and triplet-triplet annihilation (TTA). On the other hand, we determine the contribution to EL from the formation of singlet exciplex states via polarons, RISC and TTA. Our results show that TTA accounts for a significant part to triplet depopulation and contributes to EL while limiting the overall device quantum efficiency.

physics.app-ph↗

Room Temperature Coherent Control of Spin Defects in hexagonal Boron Nitride

Optically active defects in solids with accessible spin states are promising candidates for solid state quantum information and sensing applications. To employ these defects as quantum building blocks, coherent manipulation of their spin state is required. Here we realize coherent control of ensembles of boron vacancy (V$_B^-$) centers in hexagonal boron nitride (hBN). Specifically, by applying pulsed spin resonance protocols, we measure spin-lattice relaxation time ($T_1$) of 18 $μ$s and spin coherence time ($T_2$) of 2 $μ$s at room temperature. The spin-lattice relaxation time increases by three orders of magnitude at cryogenic temperature. Furthermore, employing a two- and three-pulse electron spin-echo envelope modulation (ESEEM) we separate the quadrupole and hyperfine interactions with the surrounding nuclei. Finally, by applying a method to decouple the spin state from its inhomogeneous nuclear environment - a "hole-burning" - the spectral optically detected magnetic resonance linewidth is significantly reduced to several tens of kHz, thus extending the spin coherence time by a factor of three. Our results are important for employment of van der Waals materials for quantum technologies, specifically in the context of using hBN as a high-resolution quantum sensor for hybrid quantum systems including 2D heterostructures, nanoscale devices and emerging atomically thin magnets.

cond-mat.mes-hall↗

Thermal Activation Bottleneck in TADF OLEDs based on m-MTDATA:BPhen

Organic light emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) can be highly efficient because of the conversion of non-radiative triplet to radiative singlet states by reverse intersystem crossing (RISC). Even highly efficient TADF OLEDs are limited by long excited state lifetimes though, which limit current densities and cause device degradation. When singlet-triplet energy gaps are comparable to thermal energies (~tens of millielectronvolts), RISC is fast and limited only by bottlenecks due to spin-selection rules. We have studied this phenomenon under device operating conditions using pulsed electrically detected magnetic resonance spectroscopy (pEDMR) in OLEDs based on the donor:acceptor combination m MTDATA:BPhen (4,4',4''-tris[phenyl(m-tolyl)amino]triphenylamine : 4,7 diphenyl-1,10-phenanthroline). These experiments showed magnetic resonance signatures of emissive exciplex states at the donor:acceptor interface, yet these signals did not reveal coherent spin propagation effects. Instead, the intensity of these signals scales linearly with the energy dose of the applied microwave pulses. This observation excludes the direct involvement of the resonantly prepared coherent spin states and indicates that the observed current response is due to magnetic resonant heating. This implies that the studied TADF blend is not limited by spin-forbidden RISC, but rather by the thermal activation step.

physics.app-ph↗

Identifying Carbon as the Source of Visible Single Photon Emission from Hexagonal Boron Nitride

Single photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered significant attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations, the defect structure responsible for the observed emission has remained elusive. Here, by controlling the incorporation of impurities into hBN and by comparing various synthesis methods, we provide direct evidence that the visible SPEs are carbon related. Room temperature optically detected magnetic resonance (ODMR) is demonstrated on ensembles of these defects. We also perform ion implantation experiments and confirm that only carbon implantation creates SPEs in the visible spectral range. Computational analysis of hundreds of potential carbon-based defect transitions suggest that the emission results from the negatively charged VBCN- defect, which experiences long-range out-of-plane deformations and is environmentally sensitive. Our results resolve a long-standing debate about the origin of single emitters at the visible range in hBN and will be key to deterministic engineering of these defects for quantum photonic devices.

physics.app-ph↗

On the Absence of Triplet Exciton Loss Pathways in Non-Fullerene Acceptor based Organic Solar Cells

We investigate the viability of highly efficient organic solar cells (OSCs) based on non-fullerene acceptors (NFA) by taking into consideration efficiency loss channels and stability issues caused by triplet excitons (TE) formation. OSCs based on a blend of the conjugated donor polymer PBDB-T and ITIC as acceptor were fabricated and investigated with electrical, optical and spin-sensitive methods. The spin-Hamiltonian parameters of molecular TEs and charge transfer TEs in ITIC e.g., zero-field splitting and charge distribution, were calculated by Density Functional Theory (DFT) modelling. In addition, the energetic model describing the photophysical processes in the donor-acceptor blend was derived. Spin-sensitive photoluminescence measurements prove the formation of charge transfer (CT) states in the blend and the formation of TEs in the pure materials and the blend. However, no molecular TE signal is observed in the completed devices under working conditions by spin-sensitive electrical measurements. The absence of a molecular triplet state population allows to eliminate a charge carrier loss channel and irreversible photooxidation facilitated by long-lived triplet states. These results correlate well with the high power conversion efficiency of the PBDB-T:ITIC-based OSCs and their high stability.

physics.chem-ph↗

Optically and electrically excited intermediate electronic states in donor:acceptor based OLEDs

Thermally activated delayed fluorescence (TADF) emitters consisting of donor and acceptor molecules are potentially highly interesting for electroluminescence (EL) applications. Their strong fluorescence emission is considered to be due to reverse intersystem crossing (RISC), in which energetically close triplet and singlet charge transfer (CT) states, also called exciplex states, are involved. In order to distinguish between different mechanisms and excited states involved, temperature-dependent spin-sensitive measurements on organic light-emitting diodes (OLEDs) and thin films are essential. In our work we apply continuous wave (cw) and time-resolved (tr) photoluminescence (PL) spectroscopy as well as spin-sensitive EL and PL detected magnetic resonance to films and OLED devices made of three different donor:acceptor combinations. Our results clearly show that triplet exciplex states are formed and contribute to delayed fluorescence (DF) via RISC in both electrically driven OLEDs and optically excited films. In the same sample set we also found molecular triplet excitons, which occurred only in PL experiments under optical excitation and for some material systems only at low temperatures. We conclude that in all investigated molecular systems exciplex states formed at the donor:acceptor interface are responsible for TADF in OLEDs with distinct activation energies. Molecular (local) triplet exciton states are also detectable, but only under optical excitation, while they are not found in OLEDs when excited states are generated electrically. We believe that the weakly bound emissive exciplex states and the strongly bound non-emissive molecular triplet excited states coexist in the TADF emitters, and it is imperative to distinguish between optical and electrical generation paths as they may involve different intermediate excited states.

physics.app-ph↗

Getting the Right Twist: Influence of Donor-Acceptor Dihedral Angle on Exciton Kinetics and Singlet-Triplet Gap in Deep Blue Thermally Activated Delayed Fluorescence Emitter

Here, a novel deep blue emitter SBABz4 for use in organic light-emitting diodes (OLED) is investigated. The molecular design of the emitter enables thermally activated delayed fluorescence (TADF), which we examine by temperature-dependent time-resolved electroluminescence (trEL) and photoluminescence (trPL). We show that the dihedral angle between donor and acceptor strongly affects the oscillator strength of the charge transfer state alongside the singlet-triplet gap. The angular dependence of the singlet-triplet gap is calculated by time-dependent density functional theory (TD-DFT). A gap of 15 meV is calculated for the relaxed ground state configuration of SBABz4 with a dihedral angle between the donor and acceptor moieties of 86°. Surprisingly, an experimentally obtained energy gap of 72+/-5 meV can only be explained by torsion angles in the range of 70°-75°. Molecular dynamics (MD) simulations showed that SBABz4 evaporated at high temperature acquires a distribution of torsion angles, which immediately leads to the experimentally obtained energy gap. Moreover, the emitter orientation anisotropy in a host matrix shows an 80% ratio of horizontally oriented dipoles, which is highly desirable for efficient light outcoupling. Understanding intramolecular donor-acceptor geometry in evaporated films is crucial for OLED applications, because it affects oscillator strength and TADF efficiency.

physics.chem-ph↗

Room Temperature Initialisation and Readout of Intrinsic Spin Defects in a Van der Waals Crystal

Optically addressable spins in widebandgap semiconductors have become one of the most prominent platforms for exploring fundamental quantum phenomena. While several candidates in 3D crystals including diamond and silicon carbide have been extensively studied, the identification of spindependent processes in atomically thin 2D materials has remained elusive. Although optically accessible spin states in hBN are theoretically predicted, they have not yet been observed experimentally. Here, employing rigorous electron paramagnetic resonance techniques and photoluminescence spectroscopy, we identify fluorescence lines in hexagonal boron nitride associated with a particular defect, the negatively charged boron vacancy and determine the parameters of its spin Hamiltonian. We show that the defect has a triplet ground state with a zero field splitting of 3.5 GHz and establish that the centre exhibits optically detected magnetic resonance at room temperature. We also demonstrate the spin polarization of this centre under optical pumping, which leads to optically induced population inversion of the spin ground state a prerequisite for coherent spin manipulation schemes. Our results constitute a leap forward in establishing two dimensional hBN as a prime platform for scalable quantum technologies, with extended potential for spin based quantum information and sensing applications, as our ODMR studies on hBN NV diamonds hybrid structures show.

physics.optics↗

Encounter-Limited Charge Carrier Recombination in Phase Separated Organic Semiconductor Blends

The theoretical effects of phase separation on encounter-limited charge carrier recombination in organic semiconductor blends are investigated using kinetic Monte Carlo (KMC) simulations of pump-probe experiments. Using model bulk heterojunction morphologies, the dependence of the recombination rate on domain size and charge carrier mobility are quantified. Unifying competing models and simulation results, we show that the mobility dependence of the recombination rate can be described using the power mean of the electron and hole mobilities with a domain size dependent exponent. Additionally, for domain sizes typical of organic photovoltaic devices, we find that phase separation reduces the recombination rate by less than one order of magnitude compared to the Langevin model and that the mobility dependence can be approximated by the geometric mean.

cond-mat.mtrl-sci↗

Distribution of charge carrier transport properties in organic semiconductors with Gaussian disorder

The charge carrier drift mobility in disordered semiconductors is commonly graphically extracted from time-of-flight (ToF) photocurrent transients yielding a single transit time. However, the term transit time is ambiguously defined and fails to deliver a mobility in terms of a statistical average. Here, we introduce an advanced computational procedure to evaluate ToF transients, which allows to extract the whole distribution of transit times and mobilities from the photocurrent transient, instead of a single value. This method, extending the work of Scott et al. (Phys. Rev. B 46, 8603), is applicable to disordered systems with a Gaussian density of states (DOS) and its accuracy is validated using one-dimensional Monte Carlo simulations. We demonstrate the superiority of this new approach by comparing it to the common geometrical analysis of hole ToF transients measured on poly(3-hexyl thiophene-2,5-diyl) (P3HT). The extracted distributions provide access to a very detailed and accurate analysis of the charge carrier transport. For instance, not only the mobility given by the mean transit time, but also the mean mobility can be calculated. Whereas the latter determines the macroscopic photocurrent, the former is relevant for an accurate determination of the energetic disorder parameter $σ$ within the Gaussian disorder model (GDM). $σ$ derived by using the common geometrical method is, as we show, underestimated instead.

cond-mat.dis-nn↗

Nongeminate recombination in neat P3HT and P3HT:PCBM blend films

The slow decay of charge carriers in polymer-fullerene blends measured in transient studies has raised a number of questions about the mechanisms of nongeminate recombination in these systems. In an attempt to understand this behavior, we have applied a combination of steady-state and transient photoinduced absorption measurements to compare nongeminate recombination behavior in films of neat poly(3-hexyl thiophene) (P3HT) and P3HT blended with [6,6]-phenyl-C61 butyric acid methyl ester (PCBM). Transient measurements show that carrier recombination in the neat P3HT film exhibits second-order decay with a recombination rate coefficient that is similar to that predicted by Langevin theory. In addition, temperature dependent measurements indicate that neat films exhibit recombination behavior consistent with the Gaussian disorder model. In contrast, the P3HT:PCBM blend films are characterized by a strongly reduced recombination rate and an apparent recombination order greater than two. We then assess a number of previously proposed explanations for this behavior, including phase separation, carrier concentration dependent mobility, non-encounter limited recombination, and interfacial states. In the end, we propose a model in which pure domains with a Gaussian density of states are separated by a mixed phase with an exponential density of states. We find that such a model can explain both the reduced magnitude of the recombination rate and the high order recombination kinetics and, based on the current state of knowledge, is the most consistent with experimental observations.

cond-mat.mtrl-sci↗

Effects of Characteristic Length Scales on the Exciton Dynamics in Rubrene Single Crystals

As for its inorganic counterparts the future developments in organic electronics are driven by an advanced device miniaturization. Therefore, the opto-electronic behavior of up-to-date devices is progressively governed by the local structural environment. However, there is a lack of organic semiconductor materials providing access to the fundamental structure-functionality relation, either due to limitations by their inherent growth or their optical characteristics. In this work we present a systematic investigation of the optical states, so-called excitons, and their temporal evolution in the prototypical organic semiconductor rubrene by means of time and temperature dependent photoluminescence studies. This material offers the unique possibility of preparing well-defined morphologies with adjustable degree of confinement. By this approach we are able to confirm the direct influence on the temperature dependent optical processes with picosecond resolution already for a spatial localization of excitation on the μm length scale. While in bulk single crystals the exciton decay dynamics are governed by thermally activated singlet fission, excitons created in microcrystals are trapped by dark states localized on the surface and leading to a pronounced enhancement of their average lifetime. Our results highlight the impact of the local environment on the excitonic states and their dynamics in organic semiconductors. With respect to the spatial dimensions of organic thin film devices, this correlation and the reported effects emerging by the confinement have to be considered upon further miniaturization and in the development of innovative device concepts, such as photovoltaic cells based on triplet-harvesting.

cond-mat.mtrl-sci↗

Highly-Efficient Charge Separation and Polaron Delocalization in Polymer-Fullerene Bulk-Heterojunctions: A Comparative Multi-Frequency EPR & DFT Study

The ongoing depletion of fossil fuels has led to an intensive search for additional renewable energy sources. Solar-based technologies could provide sufficient energy to satisfy the global economic demands in the near future. Photovoltaic (PV) cells are the most promising man-made devices for direct solar energy utilization. Understanding the charge separation and charge transport in PV materials at a molecular level is crucial for improving the efficiency of the solar cells. Here, we use light-induced EPR spectroscopy combined with DFT calculations to study the electronic structure of charge separated states in blends of polymers (P3HT, PCDTBT, and PTB7) and fullerene derivatives (C60-PCBM and C70-PCBM). Solar cells made with the same composites as active layers show power conversion efficiencies of 3.3% (P3HT), 6.1% (PCDTBT), and 7.3% (PTB7), respectively. Under illumination of these composites, two paramagnetic species are formed due to photo-induced electron transfer between the conjugated polymer and the fullerene. They are the positive, P+, and negative, P-, polarons on the polymer backbone and fullerene cage, respectively, and correspond to radical cations and radical anions. Using the high spectral resolution of high-frequency EPR (130 GHz), the EPR spectra of these species were resolved and principal components of the g-tensors were assigned. Light-induced pulsed ENDOR spectroscopy allowed the determination of 1H hyperfine coupling constants of photogenerated positive and negative polarons. The experimental results obtained for the different polymer-fullerene composites have been compared with DFT calculations, revealing that in all three systems the positive polaron is distributed over distances of 40-60 A on the polymer chain. This corresponds to about 15 thiophene units for P3HT, approximately three units PCDTBT, and about three to four units for PTB7. No spin density...

cond-mat.mtrl-sci↗

Impact of nongeminate recombination on the performance of pristine and annealed P3HT:PCBM solar cells

Transient photovoltage (TPV) and voltage dependent charge extraction (CE) measurements were applied to poly(3-hexylthiophene)(P3HT):[6,6]-phenyl-C61 butyric acid methyl ester (PCBM) bulk heterojunction solar cells to analyze the limitations of solar cell performance in pristine and annealed devices. From the determined charge carrier decay rate under open circuit conditions and the voltage dependent charge carrier densities n(V) the nongeminate loss current jloss of the device is accessible. We found that jloss alone is sufficient to describe the j-V characteristics across the whole operational range, for annealed and, not yet shown before, also for the lower performing pristine solar cells. Even in a temperature range from 300 K to 200 K nongeminate recombination is found to be the dominant and, therefore, performance limiting loss process. Consequently, charge photogeneration is voltage independent in the voltage range studied.

cond-mat.mtrl-sci↗

Excitation Dynamics in Low Band Gap Donor-Acceptor Copolymers and Blends

Donor-acceptor (D-A) type copolymers show great potential for the application in the active layer of organic solar cells. Nevertheless the nature of the excited states, the coupling mechanism and the relaxation pathways following photoexcitation are yet to be clarified. We carried out comparative measurements of the steady state absorption and photoluminescence (PL) on the copolymer poly[N-(1-octylnonyl)-2,7-carbazole] -alt-5,5-[4',7' -di(thien-2-yl)-2',1',3' -benzothiadiazole] (PCDTBT), its building blocks as well as on the newly synthesized N-(1-octylnonyl)-2,7-bis-[(5-phenyl)thien-2-yl)carbazole (BPT-carbazole) (see Figure 1). The high-energy absorption band (HEB) of PCDTBT was identified with absorption of carbazoles with adjacent thiophene rings while the low-energy band (LEB) originates instead from the charge transfer (CT) state delocalized over the aforementioned unit with adjacent benzothiadiazole group. Photoexcitation of the HEB is followed by internal relaxation prior the radiative decay to the ground state. Adding PC70BM results in the efficient PL quenching within the first 50 ps after excitation. From the PL excitation experiments no evidence for a direct electron transfer from the HEB of PCDTBT towards the fullerene acceptor was found, therefore the internal relaxation mechanisms within PCDTBT can be assumed to precede. Our findings indicate that effective coupling between copolymer building blocks governs the photovoltaic performance of the blends.

cond-mat.mtrl-sci↗