arXiv subjects

Vladimir Gromov

Publications and source records attributed to Vladimir Gromov.

3 recordsLinked to original sources

arXiv2025

Characterisation of the first wafer-scale prototype for the ALICE ITS3 upgrade: the monolithic stitched sensor (MOSS)

This paper presents the characterisation and testing of the first wafer-scale monolithic stitched sensor (MOSS) prototype developed for the ALICE ITS3 upgrade that is to be installed during the LHC Long Shutdown 3 (2026-2030). The MOSS chip design is driven by the truly cylindrical detector geometry that imposes that each layer is built out of two wafer-sized, bent silicon chips. The stitching technique is employed to fabricate sensors with dimensions of 1.4 $\times$ 25.9 cm, thinned to 50 $μ$m. The chip architecture, in-pixel front-end, laboratory and in-beam characterisation, susceptibility to single-event effects, and series testing are discussed. The testing campaign validates the design of a wafer-scale stitched sensor and the performance of the pixel matrix to be within the ITS3 requirements. The MOSS chip demonstrates the feasibility of the ITS3 detector concept and provides insights for further optimisation and development.

physics.ins-det↗

arXiv2025

The Timepix4 Beam Telescope

The spatial and temporal performance of a telescope system comprising planar silicon sensors bump-bonded to Timepix4-v2 ASICs are assessed at the CERN SPS using a $180$~GeV/$c$ mixed hadron beam. The pointing resolution at the centre of the telescope is $2.3 \pm 0.1\;\mathrm{μm}$ and $2.4 \pm 0.1\mathrm{μm}$ in x and y directions, respectively. The temporal resolution for the combined timestamps on a track using only the information from the Timepix4 planes is found to be $92 \pm 5$~ps. The telescope is extensively described including its data acquisition system and dedicated software as well as the corrections applied to the raw measurements.

hep-ex↗

arXiv2024

Timing resolution performance of Timepix4 bump-bonded assemblies

The timing performance of the Timepix4 application-specific integrated circuit (ASIC) bump-bonded to a $100\;μ\textrm{m}$ thick n-on-p silicon sensor is presented. A picosecond pulsed infrared laser was used to generate electron-hole pairs in the silicon bulk in a repeatable fashion, controlling the amount, position and time of the stimulated charge signal. The timing resolution for a single pixel has been measured to $107\;\textrm{ps}$ r.m.s. for laser-stimulated signals in the silicon sensor bulk. Considering multi-pixel clusters, the measured timing resolution reached $33\;\textrm{ps}$ r.m.s. exploiting oversampling of the timing information over several pixels.

physics.ins-det↗