arXiv subjects

Vladimir I. Falko

Publications and source records attributed to Vladimir I. Falko.

10 recordsLinked to original sources

arXiv2026

Displacement-Field-Induced Ionization of Defect States in High-Quality hBN

Encapsulation of two-dimensional (2D) materials with hexagonal boron nitride (hBN) is widely used to fabricate ultraclean van der Waals (vdW) heterostructures for optoelectronic and quantum transport studies. These devices are often operated under strong out-of-plane displacement fields that tune the electronic properties of the active 2D material, while the surrounding hBN is typically assumed to remain electronically inert. This assumption, however, neglects defect states that are present even in high-quality hBN crystals. Here, we probe their response to the applied displacement field using monolayer graphene encapsulated between hBN crystals as a sensitive charge sensor. Increasing the displacement field induces notable charge transfer between graphene and hBN, producing additional electron doping of 10-20x10^9 cm^(-2) even at the moderate displacement field (~0.5 V nm^(-1)), while simultaneously increasing carrier-density inhomogeneity of the graphene layer. Both effects are consistent with ionization of defect states within the hBN bandgap, with the bulk density ~1-7x10^(-5) nm^(-3) varying across different hBN crystals. Our results show that displacement-field-induced defect ionization in hBN can modify the electronic response of vdW heterostructures, with direct implications for device design and interpretation of experiments.

cond-mat.mes-hall↗

arXiv2026

Ultra-small-angle graphene twistronics with monolayer spacers: From interlayer hybridisation and moiré effects to high-temperature magnetotransport oscillations

Based on the analysis of moiré superlattice characteristics and interlayer hybridisation in small-angle twisted graphene multilayers with a monolayer hexagonal boron nitride (hBN) spacer, we predict spectral features and quantum transport effects in these systems. Here, we consider both a twisted bilayer and double bilayers with a spacer, discuss double bilayers in two stacking orders - with and without inversion symmetry - and also compare the results obtained with self-consistent Hartree calculations with and without in-plane periodic charge distribution, offering computationally efficient models for these graphene/hBN/graphene moiré systems. We note parametric intervals where the appearance of minibands can be enhanced by tuning with an out-of-plane displacement field, and identify the miniband edges and van Hove singularities across a broad range of densities and displacement fields. These system host Lifshitz transitions at which the Fermi lines form a network across moiré Brillouin zones, and to which Brown-Zak oscillations converge at low magnetic field and elevated temperatures. We analyse interlayer hybridisation across the same parameter space, discuss how hybridisation affects in-plane magneto-transport in ultra-high-mobility structures, and predict that semiclassical magneto-oscillations of interlayer hybridisation can lead to 1/B-periodic quantum oscillations of resistivity persistent to high temperature.

cond-mat.mes-hall↗

arXiv2025

Stacking-induced ferroelectricity in tetralayer graphene

Recent studies have reported emergent ferroelectric behavior in twisted or moiré-engineered graphene-based van der Waals heterostructures, yet the microscopic origin of this effect remains under debate. Pristine mono- or few-layer graphene lacks a permanent dipole due to its centrosymmetric lattice, making the emergence of ferroelectricity unlikely. However, mixed-stacked graphene, such as the ABCB tetralayer configuration, breaks both inversion and mirror symmetry and has been theoretically predicted to support electrically switchable dipoles. ABCB graphene represents the simplest natural graphene polytype exhibiting intrinsic out-of-plane polarization, arising from asymmetric charge carrier distribution across its layers. Here, we report robust ferroelectric behavior in dual-gated, non-aligned ABCB tetralayer graphene encapsulated in hexagonal boron nitride. The device exhibits pronounced hysteresis in resistance under both top and bottom gate modulation, with the effect persisting up to room temperature. This hysteresis originates from reversible layer-polarized charge reordering, driven by gate-induced transitions between ABCB and BCBA stacking configurations -- without requiring moiré superlattices. Our findings establish stacking-order-induced symmetry breaking as a fundamental route to electronic ferroelectricity in graphene and open pathways for non-volatile memory applications based on naturally occurring mixed-stacked multilayer graphene.

cond-mat.mes-hall↗

arXiv2025

Ferroelectric Properties of van der Waals Chalcogenides: DFT perspective

Layered materials with non-centrosymmetric stacking order are attracting increasing interest due to the presence of ferroelectric polarization, which is dictated by weak interlayer hybridization of atomic orbitals. Here, we use density functional theory modelling to systematically build a library of van der Waals chalcogenides that exhibit substantial ferroelectric polarization. For the most promising materials, we also analyse the pressure dependence of the ferroelectric effect and charge accumulation of photo-induced electrons and holes at surfaces and internal twin boundaries in thin films of such materials.

cond-mat.mes-hall↗

arXiv2024

Tunnel junctions based on interfacial 2D ferroelectrics

Van der Waals (vdW) heterostructures have opened new opportunities to develop atomically thin (opto)electronic devices with a wide range of functionalities. The recent focus on manipulating the interlayer twist angle has led to the observation of out-of-plane room temperature ferroelectricity in twisted rhombohedral (R) bilayers of transition metal dichalcogenides (TMDs). Here we explore the switching behaviour of sliding ferroelectricity using scanning probe microscopy domain mapping and tunnelling transport measurements. We observe well-pronounced ambipolar switching behaviour in ferroelectric tunnelling junctions (FTJ) with composite ferroelectric/non-polar insulator barriers and support our experimental results with complementary theoretical modelling. Furthermore, we show that the switching behaviour is strongly influenced by the underlying domain structure, allowing fabrication of diverse FTJ devices with various functionalities. We show that to observe the polarisation reversal, at least one partial dislocation must be present in the device area. This behaviour is drastically different from that of conventional ferroelectric materials and its understanding is an important milestone for future development of optoelectronic devices based on sliding ferroelectricity.

cond-mat.mes-hall↗

arXiv2020

High-order minibands and interband Landau level reconstruction in graphene moire superlattice

The propagation of Dirac fermions in graphene through a long-period periodic potential would result in a band folding together with the emergence of a series of cloned Dirac points (DPs). In highly aligned graphene/hexagonal boron nitride (G/hBN) heterostructures, the lattice mismatch between the two atomic crystals generates a unique kind of periodic structure known as a moiré superlattice. Of particular interests is the emergent phenomena related to the reconstructed band-structure of graphene, such as the Hofstadter butterfly, topological currents, gate dependent pseudospin mixing, and ballistic miniband conduction. However, most studies so far have been limited to the lower-order minibands, e.g. the 1st and 2nd minibands counted from charge neutrality, and consequently the fundamental nature of the reconstructed higher-order miniband spectra still remains largely unknown. Here we report on probing the higher-order minibands of precisely aligned graphene moiré superlattices by transport spectroscopy. Using dual electrostatic gating, the edges of these high-order minibands, i.e. the 3rd and 4th minibands, can be reached. Interestingly, we have observed interband Landau level (LL) crossinginducing gap closures in a multiband magneto-transport regime, which originates from band overlap between the 2nd and 3rd minibands. As observed high-order minibands and LL reconstruction qualitatively match our simulated results. Our findings highlight the synergistic effect of minibands in transport, thus presenting a new opportunity for graphene electronic devices.

cond-mat.mes-hall↗

arXiv2018

Dissociation of two-dimensional excitons in monolayer WSe2

Two-dimensional (2D) semiconducting materials are promising building blocks for optoelectronic applications, many of which require efficient dissociation of excitons into free electrons and holes. However, the strongly bound excitons arising from the enhanced Coulomb interaction in these monolayers suppresses the creation of free carriers. Here, we probe and identify the main exciton dissociation mechanism through time- and spectrally-resolved photocurrent measurements in a monolayer WSe2 p-n junction. We find that under static in-plane electric field, excitons dissociate at a rate corresponding to the one predicted for the tunnel ionization of 2D Wannier-Mott excitons. This study is essential for the understanding of the optoelectronic photoresponse in of 2D semiconductors, and offers design rules for the realization of efficient photodetectors, valley-dependent optoelectronics and novel quantum coherent phases.

cond-mat.mes-hall↗

arXiv2017

Optical identification using imperfections in 2D materials

The ability to uniquely identify an object or device is important for authentication. Imperfections, locked into structures during fabrication, can be used to provide a fingerprint that is challenging to reproduce. In this paper, we propose a simple optical technique to read unique information from nanometer-scale defects in 2D materials. Flaws created during crystal growth or fabrication lead to spatial variations in the bandgap of 2D materials that can be characterized through photoluminescence measurements. We show a simple setup involving an angle-adjustable transmission filter, simple optics and a CCD camera can capture spatially-dependent photoluminescence to produce complex maps of unique information from 2D monolayers. Atomic force microscopy is used to verify the origin of the optical signature measured, demonstrating that it results from nanometer-scale imperfections. This solution to optical identification with 2D materials could be employed as a robust security measure to prevent counterfeiting.

cond-mat.mes-hall↗

arXiv2003

Weak localization and conductance fluctuations in a quantum dot with parallel magnetic field and spin-orbit scattering

In the presence of both spin-orbit scattering and a magnetic field the conductance of a chaotic GaAs quantum dot displays quite a rich behavior. Using a Hamiltonian derived by Aleiner and Falko [Phys. Rev. Lett. 87, 256801 (2001)] we calculate the weak localization correction and the covariance of the conductance, as a function of parallel and perpendicular magnetic field and spin-orbit coupling strength. We also show how the combination of an in-plane magnetic field and spin-orbit scattering gives rise to a component to the magnetoconductance that is anti-symmetric with respect to reversal of the perpendicular component of the magnetic field and how spin-orbit scattering leads to a "magnetic-field echo" in the conductance autocorrelation function. Our results can be used for a measurement of the Dresselhaus and Bychkov-Rashba spin-orbit scattering lengths in a GaAs/GaAlAs heterostructure.

cond-mat.mes-hall↗

arXiv1999

Distribution of time-constants for tunneling through a 1D Disordered Chain

The dynamics of electronic tunneling through a disordered 1D chain of finite length is considered. We calculate distributions of the transmission coefficient T, Wigner delay time and, $τ_ϕ$ and the transport time, $τ_t=Tτ_ϕ$. The central bodies of these distributions have a power-law form, what can be understood in terms of the resonant tunneling through localised states.

cond-mat.dis-nn↗