arXiv subjects

Vladimir V. Arsoski

Publications and source records attributed to Vladimir V. Arsoski.

6 recordsLinked to original sources

arXiv2025

Multi-controlled single-qubit unitary gates based on the quantum Fourier transform and deep decomposition

We will present a few new generalizations of the multi-controlled X (MCX) gate that uses the quantum Fourier transform (QFT). Firstly, we will optimize QFT-MCX and prove that it is equivalent to a stair MCX gates array. This stair-wise structure will allow us to devise a method for adding an arbitrary phase factor to each qubit. The first MCX generalization into multi-controlled unitary gates (MCU) relies on replacing phase gates acting on the target qubit with controlled unitary gates. We will employ alternative single-qubit gate notation to minimize the complexities of these gates and show how to expand the circuit straightforwardly to the multi-controlled multi-target (MCMT) gate. The second generalization relies on the ZYZ-like decomposition. We will show that by extending one QFT-MCX circuit we implement the two multi-controlled X gates needed for the decomposition. Finally, we will split control wirelines into groups and use iterative ZYZ-like decomposition on QFT-MCU to obtain "deep decomposed" (DD) MCU which employs a lower number of C-NOTs than the previous two, thus making DD-MCU less prone to decoherence and noise. The supremacy of our implementations over the best-known optimized algorithm will be demonstrated by emulating noisy quantum calculations.

quant-ph↗

arXiv2024

Implementing multi-controlled X gates using the quantum Fourier transform

Quantum computing has the potential to solve many complex algorithms in the domains of optimization, arithmetics, structural search, financial risk analysis, machine learning, image processing, and others. Quantum circuits built to implement these algorithms usually require multi-controlled gates as fundamental building blocks, where the multi-controlled Toffoli stands out as the primary example. For implementation in quantum hardware, these gates should be decomposed into many elementary gates, which results in a large depth of the final quantum circuit. However, even moderately deep quantum circuits have low fidelity due to decoherence effects and, thus, may return an almost perfectly uniform distribution of the output results. This paper proposes a different approach for efficient cost multi-controlled gates implementation using the quantum Fourier transform. We show how the depth of the circuit can be significantly reduced using only a few ancilla qubits, making our approach viable for application to noisy intermediate-scale quantum computers. This quantum arithmetic-based approach can be efficiently used to implement many complex quantum gates.

quant-ph↗

arXiv2020

Asymmetric versus symmetric $\rm{HgTe/Cd_{x}Hg_{1-x}Te}$ double quantum wells: Band gap tuning without electric field

We investigate the electron states in double asymmetric $\rm{HgTe/Cd_{x}Hg_{1-x}Te}$ quantum wells grown along the $[001]$ direction. The subbands are computed by means of the envelope function approximation applied to the 8-band Kane $\bf{k}\cdot\bf{p}$ model. The asymmetry of the confining potential of the double quantum wells results in a gap opening which is absent in the symmetric system where it can only be induced by an applied electric field. The band gap and the subbands are affected by spin-orbit coupling which is a consequence of the asymmetry of the confining potential. The electron-like and hole-like states are mainly confined in different quantum wells, and the enhanced hybridization between them opens a spin-dependent hybridization gap at a finite in-plane wavevector. We show that both the ratio of the widths of the two quantum wells and the mole fraction of the $\rm{Cd_{x}Hg_{1-x}Te}$ barrier control both the energy gap between the hole-like states and the hybridization gap. The energy subbands are shown to exhibit inverted ordering, and therefore a nontrivial topological phase could emerge in the system.

cond-mat.mes-hall↗

arXiv2019

Confined electron states in two-dimensional HgTe in magnetic field: Quantum-dot versus quantum-ring behavior

We investigate the electron states and optical absorption in square- and hexagonal-shaped two-dimensional (2D) HgTe quantum dots and quantum rings in the presence of a perpendicular magnetic field. The electronic structure is modeled by means of the $sp^3d^5s^*$ tight-binding method within the nearest-neighbor approximation. Both bulklike and edge states appear in the energy spectrum. The bulklike states in quantum rings exhibit Aharonov-Bohm oscillations in magnetic field, whereas no such oscillations are found in quantum dots, which is ascribed to the different topology of the two systems. When magnetic field varies, all the edge states in square quantum dots appear as quasibands composed of almost fully flat levels, whereas some edge states in quantum rings are found to oscillate with magnetic field. However, the edge states in hexagonal quantum dots are localized like in rings. The absorption spectra of all the structures consist of numerous absorption lines, which substantially overlap even for small line broadening. The absorption lines in the infrared are found to originate from transitions between edge states. It is shown that the magnetic field can be used to efficiently tune the optical absorption of HgTe 2D quantum dot and quantum ring systems.

cond-mat.mes-hall↗

arXiv2017

Magnetoelectronic properties of normal and skewed phosphorene nanoribbons

The energy spectrum and eigenstates of single-layer black phosphorous nanoribbons in the presence of perpendicular magnetic field and in-plane transverse electric field are investigated by means of a tight-binding method and the effect of different types of edges is analytically examined. A description based on a new continuous model is proposed by expansion of the tight-binding model in the long-wavelength approximation. The wavefunctions corresponding to the flatband part of the spectrum are obtained analytically and are shown to approach agree well with the numerical results from the tight-binding method. Analytical expressions for the critical magnetic field at which Landau levels are formed and the ranges of wavenumbers in the dispersionless flat-band segments in the energy spectra are derived. We examine the evolution of the Landau levels when an in-plane lateral electric field is applied and determine analytically how the edge states shift with magnetic field.

cond-mat.mes-hall↗

arXiv2013

Strain and band-mixing effects on the excitonic Aharonov-Bohm effect in In(Ga)As/GaAs ringlike quantum dots

Neutral excitons in strained axially symmetric In(Ga)As/GaAs quantum dots with ringlike shape are investigated. Similar to experimental self-assembled quantum rings, the analyzed quantum dots have volcano-like shapes. The continuum mechanical model is employed to determine the strain distribution, and the single-band envelope function approach is adopted to compute the electron states. The hole states are determined by the axially symmetric multiband Luttinger-Kohn Hamiltonian, and the exciton states are obtained from an exact diagonalization. We found that the presence of the inner layer covering the ring opening enhances the excitonic Aharonov-Bohm (AB) oscillations. The reason is that the hole becomes mainly localized in the inner part of the quantum dot due to strain, whereas the electron resides mainly inside the ring-shaped rim. Interestingly, larger AB oscillations are found in the analyzed quantum dot than in a fully opened quantum ring of the same width. Comparison with the unstrained ring-like quantum dot shows that the amplitude of the excitonic Aharonov-Bohm oscillations are almost doubled in the presence of strain. The computed oscillations of the exciton energy levels are comparable in magnitude to the oscillations measured in recent experiments.

cond-mat.mes-hall↗