SearcharxivSearch

arXiv subjects

Vladimir Vyurkov

Publications and source records attributed to Vladimir Vyurkov.

5 recordsLinked to original sources

Quantum register based on double quantum dots in semiconductor nanowires

An implementation of a universal solid-state quantum register based on electron space states in field-defined double quantum dots (a DQD possesses one electron in two adjacent tunnel bound dots) in an ultrathin semiconductor wire is discussed. To some extent, the structure resembles that of a field-effect transistor with multiple controlling electrodes (gates). Scalability is audible and it opens up a possibility of large-scale universal quantum computer fabricated by advanced silicon technology. Moreover, the structure could be developed into an ensemble quantum register where an array of nanowires with common controlling electrodes and contacts is fabricated. That register is much more resistant against environment noise. It is crucial that an individual qubit consists of two DQDs. The quantum information is encoded and processed inside the Hilbert subspace without charge transfer between dots. The filling factor of each quantum dot is permanently equal to 0.5. This guarantees a linear dynamics of qubits necessary for now existing quantum algorithms. Worth noting, the dynamics of qubits with altering charge state is more or less nonlinear due to interaction with surrounding dielectrics and metals (polaron effect). The basic two-qubit operations in the system are SWAP and sqrtSWAP. The latter operation is universal as well as CNOT. The two-qubit operations are performed by Coulomb interaction. Although that kind of interaction is incessant, the strength of its action depends on mutual states of interacting DQDs (in-resonance or off-resonance). In the proposed register any quantum algorithm could be effectuated via manipulation solely with digital voltage pulses on controlling electrodes that reminds a functioning of an integrated circuit. The final read-out of the register is performed after decoding into charge states of DQDs and a transmission of current through the wire.

cond-mat.mes-hall

Electron-hole collision-limited resistance of gapped graphene

Collisions between electrons and holes can dominate the carrier scattering in clean graphene samples in the vicinity of charge neutrality point. While electron-hole limited resistance in pristine gapless graphene is well-studied, its evolution with induction of band gap $E_g$ is less explored. Here, we derive the functional dependence of electron-hole limited resistance of gapped graphene $ρ_{eh}$ on the ratio of gap and thermal energy $E_g/kT$. At low temperatures and large band gaps, the resistance grows linearly with $E_g/kT$, and possesses a minimum at $E_g \approx 2.5 kT$. This contrast to the Arrhenius activation-type behaviour for intrinsic semiconductors. Introduction of impurities restores the Arrhenius law for resistivity at low temperatures and/or high doping densities. The hallmark of electron-hole collision effects in graphene resistivity at charge neutrality is the crossover between exponential and power-law resistivity scalings with temperature.

cond-mat.mes-hall

Auger recombination in Dirac materials: A tangle of many-body effects

The peculiar electron dispersion in Dirac materials makes lowest-order Auger processes prohibited or marginally prohibited by energy and momentum conservation laws. Thus, Auger recombination (AR) in these materials is very sensitive to many-body effects. We incorporate them at the level of the $GW$ approximation into the nonequilibrium Green's functions approach to AR and study the role of dynamic screening, spectrum broadening and renormalization in the case of weakly pumped undoped graphene. We find that incorrect treatment of many-body effects can lead to an order-of-magnitude error in the recombination rate. We show that the AR time weakly (sublinearly) depends on the background dielectric constant, which limits the possibility to control recombination by the choice of substrate. However, the AR time can be considerably prolonged by placing graphene under a metal gate or by introducing a bandgap. With carrier cooling taken into account, our results comply with experiments on photoexcited graphene.

cond-mat.mes-hall

Carrier-carrier scattering and negative dynamic conductivity in pumped graphene

We theoretically examine the effect of carrier-carrier scattering processes (electron-hole and electron-electron) on the intraband radiation absorption and their contribution to the net dynamic conductivity in optically or electrically pumped graphene. We demonstrate that the radiation absorption assisted by the carrier-carrier scattering can be stronger than the Drude absorption due to the carrier scattering on disorder. Since the intraband absorption of radiation effectively competes with its interband amplification, this can substantially affect the conditions of the negative dynamic conductivity in the pumped graphene and, hence, the interband terahertz and infrared lasing. We find the threshold values of the frequency and quasi-Fermi energy of nonequilibrium carriers corresponding to the onset of negative dynamic conductivity. The obtained results show that the effect of carrier-carrier scattering shifts the threshold frequency of the radiation amplification in pumped graphene to higher values. In particular, the negative dynamic conductivity is attainable at the frequencies above 6 THz in graphene on SiO2 substrates at room temperature. The threshold frequency can be decreased to markedly lower values in graphene structures with high-k substrates due to screening of the carrier-carrier scattering, particularly at lower temperatures.

cond-mat.mes-hall

Quantum single electron solitons near metal surface

A possibility of a quantum single electron soliton (QSES) formation in structures with different dimensionality (0, 1, 2, and 3D) and spectrum (parabolic and linear) placed near metal surface is discussed. These solitons originate as solutions of the nonlinear Schrodinger equation allowing for interaction with image charges in metal. The binding energy of those quasi-particles could exceed the thermal energy at room temperature.

cond-mat.mes-hall