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Vrindaa Somjit

Publications and source records attributed to Vrindaa Somjit.

5 recordsLinked to original sources

Optical decoherence in Er$^{3+}$-doped CeO$_2$ spin qubit platforms

Erbium ions (Er$^{3+}$) in cerium dioxide (CeO$_2$) represent a promising spin-photon interface for quantum communication, but the mechanisms limiting their optical coherence remain poorly understood. Using periodic hybrid density functional theory calculations with finite-size corrections, we identify Ce$^{3+}$ polarons and their complexes with oxygen vacancies and Er$^{3+}$ dopants as likely sources of optical decoherence. These defects exhibit finite photoionization cross-sections at 0.8 eV, coinciding with both the laser excitation energy used experimentally and the emission energy of Er$^{3+}$. This resonance enables photoionization of the polarons and photoluminescence quenching of Er$^{3+}$, leading to the broadening of optical linewidths, shortening of excited-state lifetimes, and introduction of charge noise. Our concentration-dependent photocurrent measurements in Er$^{3+}$-doped CeO$_2$ films under 0.8 eV illumination validate the predicted decoherence pathway. Our combined computational and experimental results identify a concrete defect-engineering target for improving the Er$^{3+}$-doped CeO$_2$ platform, and point to a decoherence mechanism likely relevant to other Er$^{3+}$-doped multivalent-oxide quantum platforms.

cond-mat.mtrl-sci

The WEST code for large-scale excited-state materials simulations

We present WEST, an open-source plane-wave pseudopotential code for large-scale excited-state materials simulations, and describe its theoretical foundations, software architecture, and capabilities. WEST implements full-frequency GW, quantum defect embedding theory, the Bethe-Salpeter equation, and time-dependent density functional theory within a common algorithmic framework that avoids the explicit computation of virtual electronic states. By combining density functional and density matrix perturbation theory, low-rank representations of the dielectric screening and exact exchange, and localization techniques, WEST achieves favorable computational scaling with system size. The code supports the calculation of quasi-particle and neutral excitation energies, optical and photoluminescence spectra, excited-state forces, and non-adiabatic couplings, with interoperable workflows connecting to quantum chemistry, vibronic coupling, and quantum computing packages. A hierarchical parallelization strategy and GPU acceleration deliver near-ideal strong scaling to thousands of GPUs, enabling accurate excited-state simulations of systems with more than a thousand atoms. Representative applications, spanning the full optical cycle of solid-state spin defects, self-trapped excitons in metal-halide perovskites, and the optical response of liquid water and ice, demonstrate the accuracy and versatility of the code across diverse material classes. The capabilities implemented in WEST establish the code as a scalable platform for predictive excited-state simulations, high-throughput materials discovery, and the generation of high-fidelity datasets for machine learning in computational materials science.

cond-mat.mtrl-sci

Spin decoherence dynamics of Er$^{3+}$ in CeO$_2$ film

Developing telecom-compatible spin-photon interfaces is essential towards scalable quantum networks. Erbium ions (Er$^{3+}$) exhibit a unique combination of a telecom (1.5 $μ$m) optical transition and an effective spin-$1/2$ ground state, but identifying a host that enables heterogeneous device integration while preserving long optical and spin coherence remains an open challenge. We explore a new platform of Er$^{3+}$:CeO$_2$ films on silicon, offering low nuclear spin density and the potential for on-chip integration. We demonstrate a 38.8 $μ$s spin coherence, which can be extended to 176.4\nobreakspace $μ$s with dynamical decoupling. Pairing experiments with cluster correlation expansion calculations, we identify spectral diffusion-induced Er$^{3+}$ spin flips as the dominant decoherence mechanism and provide pathways to millisecond-scale coherence.

quant-ph

An NV- center in magnesium oxide as a spin qubit for hybrid quantum technologies

Recent predictions suggest that oxides, such as MgO and CaO, could serve as hosts of spin defects with long coherence times and thus be promising materials for quantum applications. However, in most cases specific defects have not yet been identified. Here, by using a high-throughput first-principles framework and advanced electronic structure methods, we identify a negatively-charged complex between a nitrogen interstitial and a magnesium vacancy in MgO with favorable electronic and optical properties for hybrid quantum technologies. We show that this NV- center has stable triplet ground and excited states, with singlet shelving states enabling optical initialization and spin-dependent readout. We predict several properties, including absorption, emission, and zero-phonon line energies, as well as zero-field splitting tensor, and hyperfine interaction parameters, which can aid in the experimental identification of this defect. Our calculations show that due to a strong pseudo-Jahn Teller effect and low frequency phonon modes, the NV- center in MgO is subject to a substantial vibronic coupling. We discuss design strategies to reduce such coupling and increase the Debye-Waller factor, including the effect of strain and the localization of the defect states. We propose that the favorable properties of the NV- defect, along with the technological maturity of MgO, could enable hybrid classical-quantum applications, such as spintronic quantum sensors and single qubit gates.

cond-mat.mtrl-sci

Electronegative metal dopants improve switching consistency in Al2O3 resistive switching devices

Resistive random access memories are promising for non-volatile memory and brain-inspired computing applications. High variability and low yield of these devices are key drawbacks hindering reliable training of physical neural networks. In this study, we show that doping an oxide electrolyte, Al2O3, with electronegative metals makes resistive switching significantly more reproducible, surpassing the reproducibility requirements for obtaining reliable hardware neuromorphic circuits. The underlying mechanism is the ease of creating oxygen vacancies in the vicinity of electronegative dopants, due to the capture of the associated electrons by dopant mid-gap states, and the weakening of Al-O bonds. These oxygen vacancies and vacancy clusters also bind significantly to the dopant, thereby serving as preferential sites and building blocks in the formation of conducting paths. We validate this theory experimentally by implanting multiple dopants over a range of electronegativities, and find superior repeatability and yield with highly electronegative metals, Au, Pt and Pd. These devices also exhibit a gradual SET transition, enabling multibit switching that is desirable for analog computing.

cond-mat.mtrl-sci