arXiv subjects

Vsevolod Belosevich

Publications and source records attributed to Vsevolod Belosevich.

7 recordsLinked to original sources

arXiv2026

Nontrivial Boundary-Mediated Superconducting Transport in a TRSB Topological Iron-Based Superconductor

The interplay of superconductivity, band topology, and spontaneous time-reversal-symmetry breaking (TRSB) is expected to enable topological superconducting boundary states. FeTe0.55Se0.45 provides a promising single-material platform because it combines superconductivity, nontrivial band topology, and spontaneous magnetization in the superconducting state. Here we report evidence for a boundary-mediated superconducting transport response in exfoliated Fe(Te,Se) devices. Polar Kerr measurements show that TRSB emerges below TKerr < Tc and coexists with superconductivity across multiple compositions, providing an independent symmetry-breaking scale for transport. Using crystallographically sharp, continuous edges and side-surface-dominant contacts, we find that topological FeTe0.55Se0.45 exhibits an anomalous conductance plateau absent in topologically trivial FeTe0.40Se0.60 and Fe1.02Te0.55Se0.45 under comparable measurements. This plateau requires uninterrupted sharp edges connecting source and drain, persists over micrometer-scale separations far exceeding the bulk coherence length, shows strongly suppressed thermal broadening, and collapses when the drain is moved to the top surface. Its temperature evolution follows the TRSB scale: the plateau remains weakly broadened below T*Kerr and disappears near TKerr rather than Tc. These doping-selective, edge-geometry-dependent, TRSB-correlated, and long-range nonlocal signatures establish experimental criteria for identifying boundary-mediated superconducting transport in FeTe0.55Se0.45 and motivate phase-sensitive and theoretical studies of its microscopic origin.

cond-mat.supr-con↗

arXiv2026

Programmable, Spontaneous Superlattice Memory in a Monolayer Topological Insulator

Memory is a foundational concept across disciplines, from neurobiology and electronics to artificial intelligence and quantum gravity. In materials, memory effects typically arise from ferroic orders, such as ferroelectricity and ferromagnetism, where information is stored in charge or spin degrees of freedom. Here, we report a surprising discovery of a nonvolatile superlattice memory effect in monolayer TaIrTe4, a dual quantum spin Hall insulator, where information is encoded through sharply contrasting lattice periodicities. In particular, in a pristine monolayer, we observe the spontaneous emergence of a long-period superlattice that can be programmed ON and OFF in a nonvolatile manner by electrostatic tuning of low-energy electronic states. This switching toggles the system between two structural configurations with unit cell areas differing by nearly two orders of magnitude. Mechanistically, our results reveal two independent and distinct instabilities, one in the lattice and the other in the QSH electrons, which are coupled, leading to electrostatic control of lattice configurations with nonvolatile memory. This finding is enabled by combining linear and nonlinear transport measurements, Raman spectroscopy, and scanning tunneling microscopy, which probe complementary aspects of the underlying orders. Remarkably, this nonvolatile memory effect stabilizes a spontaneous superlattice with a periodicity on the few-nanometer scale that remains robust across a wide doping range, persists over days, and survives above 70 K. Combined with the QSH topology, this stability offers a promising route to nonvolatile memory control of topological flat bands and their filling enabled quantum states. Our preliminary data indeed show the emergence of new insulating states at fractional superlattice fillings, which can be clearly switched ON and OFF together with the superlattice.

cond-mat.mes-hall↗

arXiv2025

Weyl-Superconductivity revealed by Edge Mode mediated Nonlocal Transport

Topological superconductivity (TSC) hosts exotic modes enabling error-free quantum computation and low-temperature spintronics. Despite preliminary evidence of edge modes, unambiguous signatures remain undetected. Here, we report the first observation of protected, non-local transport from the edge modes of the potential Weyl-superconductor \ch{FeTe_{0.55}Se_{0.45}}. Namely resonant charge injection, ballistic transport, and extraction via edge modes. An anomalous conductance plateau emerges only when topological, superconducting, and magnetic phases coexist, with source-drain contacts coupled via the edge. Moving the drain to the bulk switches the non-local transport process to a local Andreev process, generating a zero-bias conductance peak (ZBCP). The edge mode's topological protection is confirmed by its insensitivity to external magnetic fields and increasing temperatures until the spontaneous magnetization is substantially suppressed. Our findings provide a new methodology to demonstrate TSC edge states in \ch{FeTe_{0.55}Se_{0.45}} via topologically protected non-local transport.

cond-mat.supr-con↗

arXiv2025

Quantum spin Hall effects in van der Waals materials

The quantum spin Hall (QSH) effect, first predicted in graphene by Kane and Mele in 2004, has emerged as a prototypical platform for exploring spin-orbit coupling, topology, and electronic interactions. Initially realized experimentally in quantum wells exhibiting characteristic QSH signatures, the field has since expanded with the discovery of van der Waals (vdW) materials. This review focuses on vdW systems, which offer unique advantages: their exposed surfaces enable a combination of surface-sensitive spectroscopic and microscopic tools for comprehensive detection of the QSH state; mechanical stacking with other vdW layers facilitates symmetry engineering and proximity effects; and moiré engineering introduces layer skyrmion topological phases and strong correlation effects. We highlight two monolayer families, 1T$^\prime$-MX$_2$ and MM$^\prime$X$_4$, represented by WTe$_2$ and TaIrTe$_4$, respectively. These materials exhibit QSH phases intertwined with or in close proximity to other quantum phases, such as excitonic insulators, charge density waves, and superconductivity. Their low crystal symmetry and topology enable rich quantum geometrical responses, ranging from nonlinear Hall effects to circular photogalvanic effects. We also discuss moiré systems, which combine topology with flatband physics and enhanced correlations, driving spontaneous symmetry breaking and transitions from QSH to quantum anomalous Hall (QAH) states. Remarkably, fractionalized QAH and QSH states have recently been observed in moiré systems, significantly advancing the field of condensed matter physics. Finally, we explore emerging applications of QSH and derived materials, such as using nonlinear Hall effects for quantum rectification in microwave energy harvesting and harnessing fractional anomalous states for topological quantum computing.

cond-mat.mes-hall↗

arXiv2024

Observation of the dual quantum spin Hall insulator by density-tuned correlations in a van der Waals monolayer

The convergence of topology and correlations represents a highly coveted realm in the pursuit of novel quantum states of matter. Introducing electron correlations to a quantum spin Hall (QSH) insulator can lead to the emergence of a fractional topological insulator and other exotic time-reversal-symmetric topological order, not possible in quantum Hall and Chern insulator systems. However, the QSH insulator with quantized edge conductance remains rare, let alone that with significant correlations. In this work, we report a novel dual QSH insulator within the intrinsic monolayer crystal of TaIrTe4, arising from the interplay of its single-particle topology and density-tuned electron correlations. At charge neutrality, monolayer TaIrTe4 demonstrates the QSH insulator that aligns with single-particle band structure calculations, manifesting enhanced nonlocal transport and quantized helical edge conductance. Interestingly, upon introducing electrons from charge neutrality, TaIrTe4 only shows metallic behavior in a small range of charge densities but quickly goes into a new insulating state, entirely unexpected based on TaIrTe4's single-particle band structure. This insulating state could arise from a strong electronic instability near the van Hove singularities (VHS), likely leading to a charge density wave (CDW). Remarkably, within this correlated insulating gap, we observe a resurgence of the QSH state, marked by the revival of nonlocal transport and quantized helical edge conduction. Our observation of helical edge conduction in a CDW gap could bridge spin physics and charge orders. The discovery of a dual QSH insulator introduces a new method for creating topological flat minibands via CDW superlattices, which offer a promising platform for exploring time-reversal-symmetric fractional phases and electromagnetism.

cond-mat.mes-hall↗

arXiv2023

Sustainability-Driven Exploration of Topological Material

Topological materials are at the forefront of quantum materials research, offering tremendous potential for next-generation energy and information devices. However, current investigation of these materials remains largely focused on performance and often neglects the crucial aspect of sustainability. Recognizing the pivotal role of sustainability in addressing global pollution, carbon emissions, resource conservation, and ethical labor practices, we present a comprehensive evaluation of topological materials based on their sustainability and environmental impact. Our approach involves a hierarchical analysis encompassing cost, toxicity, energy demands, environmental impact, social implications, and resilience to imports. By applying this framework to over 16,000 topological materials, we establish a sustainable topological materials database. Our endeavor unveils environmental-friendly topological materials candidates which have been previously overlooked, providing insights into their environmental ramifications and feasibility for industrial scalability. The work represents a critical step toward industrial adoption of topological materials, offering the potential for significant technological advancements and broader societal benefits.

cond-mat.mtrl-sci↗

arXiv2021

Optimal asymmetry of transistor-based terahertz detectors

Detectors of terahertz radiation based on field-effect transistors (FETs) are among most promising candidates for low-noise passive signal rectification both in imaging systems and wireless communications. However, it was not realised so far that geometric asymmetry of common FET with respect to source-drain interchange is a strong objective to photovoltage harvesting. Here, we break the traditional scheme and reveal the optimally-asymmetric FET structure providing the maximization of THz responsivity. We fabricate a series of graphene transistors with variable top gate position with respect to mid-channel, and compare their sub-THz responsivities in a wide range of carrier densities. We show that responsivity is maximized for input gate electrode shifted toward the source contact. Theoretical simulations show that for large channel resistance, exceeding the gate impedance, such recipe for responsivity maximisation is universal, and holds for both resistive self-mixing and photo-thermoelectric detection pathways. In the limiting case of small channel resistance, the thermoelectric and self-mixing voltages react differently upon changing the asymmetry, which may serve to disentangle the origin of nonlinearities in novel materials.

cond-mat.mes-hall↗