arXiv subjects

Vu Thi Ngoc Huyen

Publications and source records attributed to Vu Thi Ngoc Huyen.

9 recordsLinked to original sources

arXiv2026

Nodal-line-enhanced quantum geometric effects: anomalous and nonlinear Hall effects in the parity-mixed antiferromagnet NbMnP

The anomalous Hall effect has been understood in terms of the geometric nature of Bloch bands and impurity scattering, and has been observed in a wide variety of magnetic materials such as ferromagnets and antiferromagnets. Recently, a large anomalous Hall effect was reported in the noncollinear antiferromagnetic metal NbMnP whose magnetic order is a mixture of the even-parity and the odd-parity magnetic components. Such a magnetic structure is expected to exhibit the anomalous Hall effect and the nonlinear Hall effect from the symmetry breaking of the antiferromagnet ordering. Here, we theoretically investigate the intrinsic anomalous and nonlinear Hall effect of NbMnP induced by the quantum geometry of Bloch band using the first-principles calculation and the Wannier interpolation method. We found that the intrinsic Hall response of NbMnP is predominantly governed by the strongly enhanced Berry curvature and Berry-connection-polarization dipole on a specific mirror plane. These enhanced geometric quantities originate from the spin-orbit-coupling-induced gap openings along the nodal lines. Our results indicate that NbMnP serves as a model system for investigating transport phenomena originating from nodal-lines in parity-mixed antiferromagnets.

cond-mat.mes-hall↗

arXiv2025

Anisotropic Piezomagnetism in Noncollinear Antiferromagnets

In 3d-electron magnetic systems, the magnetic structures that transform each other by spin rotation have very close degenerate energies due to small spin-orbit coupling and can be easily controlled by chemical substitution and external magnetic fields. We investigate anisotropic piezomagnetic effects, exhibiting the different magnetic responses depending on the type of strain and the magnetic structures, for non-collinear magnetic states in Mn$_3A$N ($A=$ Ni, Cu, Zn, Ga) and Mn$_3X$ ($X$= Sn and Ge) based on detailed symmetry analysis using spin group and magnetic group and first-principles calculations of piezomagnetic responses. In Mn$_3A$N, magnetization develops along two distinct directions under the same applied stress, corresponding to two AFM states connected by spin rotation. Analysis of the piezomagnetic tensor based on magnetic and spin point groups for the states with and without spin-orbit coupling, respectively, shows that the difference in the magnitude of magnetization along different directions is attributed to the spin-orbit coupling. Mn$_3X$ are known to stabilize different AFM structures in the directions of the applied in-plane magnetic fields. Under uniaxial stress along the orthorhombic $x$ and $y$ axes, magnetization is induced without breaking the magnetic symmetry, but it develops in the opposite direction due to exchange interaction. Our study demonstrates that the direction and sign of strain-induced magnetization in Mn$_3A$N and Mn$_3X$ can be effectively controlled by strain in combination with magnetic fields. These findings highlight the potential for strain-tunable magnetic devices in noncollinear AFMs.

cond-mat.mtrl-sci↗

arXiv2024

Exploring Intrinsic and Extrinsic $p$-type Dopability of Atomically Thin $β$-TeO$_2$ from First Principles

Two-dimensional (2D) $β$-TeO$_2$ has gained attention as a promising material for optoelectronic and power device applications, thanks to its transparency and high hole mobility. However, the underlying mechanism behind its $p$-type conductivity and dopability remains unclear. In this study, we investigate the intrinsic and extrinsic point defects in monolayer and bilayer $β$-TeO$_2$, the latter of which has been experimentally synthesized, using the HSE+D3 hybrid functional. Our results reveal that most intrinsic defects are unlikely to contribute to $p$-type doping in 2D $β$-TeO$_2$. Moreover, Si contamination could further impair $p$-type conductivity. Since the point defects do not contribute to $p$-type conductivity, we propose two possible mechanisms for hole conduction: hopping conduction via localized impurity states, and substrate effects. We also explored substitutional $p$-type doping in 2D $β$-TeO$_2$ with 10 trivalent elements. Among these, the Bi dopant is found to exhibit a relatively shallow acceptor transition level. However, most dopants tend to introduce deep localized states, where hole polarons become trapped at Te's lone pairs. Interestingly, monolayer $β$-TeO$_2$ shows potential advantages over bilayers due to reduced self-compensation effects for $p$-type dopants. These findings provide valuable insights into defect engineering strategies for future electronic applications involving 2D $β$-TeO$_2$.

cond-mat.mes-hall↗

arXiv2024

Large spontaneous Hall effect with flexible domain control in an antiferromagnetic material TaMnP

Antiferromagnets without parity-time ($\mathcal{PT}$) symmetry offer novel perspectives in the field of functional magnetic materials. Among them, those with ferromagnetic-like responses are promising candidates for future applications such as antiferromagnetic (AF) memory; however, examples showing large effects are extremely limited. In this study, we show that the orthorhombic system TaMnP exhibits a large anomalous Hall conductivity (AHC) $\sim360-370$ $Ω^{-1}$cm$^{-1}$ in spite of the small net magnetization $\sim10^{-2}$ $μ_B$/Mn. Our neutron scattering experiment and the observation of the AH effect indicated that a magnetic structure of TaMnP was dominated by an AF component represented by $B_{3g}$ with the propagation vector $q=0$. Furthermore, we confirmed that the obtained AHC is among the largest observed in AF materials at zero fields. Additionally, our first-principles calculations revealed that the spin-orbit interaction originating in the nonmagnetic Ta-$5d$ electrons significantly contributes to enhancing Berry curvatures in the momentum space. We found that the magnetic fields along all the crystal axes triggered the AF domain switching, indicating the possibility of controlling the AF domain using the small net magnetization, which is symmetrically different.

cond-mat.str-el↗

arXiv2024

Native defects and $p$-type dopability in transparent $β$-TeO$_2$: A first-principles study

Although $β$-TeO$_2$ is a promising $p$-type transparent conducting oxide (TCO) due to the large optical gap ($\sim$ 3.7 eV) and a light effective hole mass, its hole dopability still remains unexplored. In this work, electronic structure of $β$-TeO$_2$ and its point defects are investigated using the HSEsol functional with the band-gap-tuned mixing parameter. Our calculations reveal that $β$-TeO$_2$ exhibits a significant difference between the fundamental and optical band gaps because lower energy optical transitions are dipole forbidden. Additionally, it has a low hole effective mass, especially in-plane. The point defect calculations show that $β$-TeO$_2$ is intrinsically an insulator. From systematic calculations of the trivalent dopants as well as hydrogen, Bi doping is suggested as the best candidate as an acceptor dopant. This work paves the way for the material design of the $p$-type $β$-TeO$_2$.

cond-mat.mtrl-sci↗

arXiv2023

Large anomalous Hall effect and unusual domain switching in an orthorhombic antiferromagnetic material NbMnP

Specific antiferromagnetic (AF) spin configurations generate large anomalous Hall effects (AHEs) even at zero magnetic field through nonvanishing Berry curvature in momentum space. In addition to restrictions on AF structures, suitable control of AF domains is essential to observe this effect without cancellations among its domains; therefore, compatible materials remain limited. Here we show that an orthorhombic noncollinear AF material, NbMnP, acquired AF structure-based AHE and controllability of the AF domains. Theoretical calculations indicated that a large Hall conductivity of $\sim230$ $Ω^{-1}$cm$^{-1}$ originated from the AF structure of NbMnP. Symmetry considerations explained the production of a small net magnetization, whose anisotropy enabled the generation and cancellation of the Hall responses using magnetic fields in different directions. Finally, asymmetric hysteresis in NbMnP shows potential for development of controllability of responses in AF materials.

cond-mat.str-el↗

arXiv2023

tqix.pis: A toolbox for quantum dynamics simulation of spin ensembles in Dicke basis

We introduce tqix.pis, a library of tqix, for quantum dynamics simulation of spin ensembles. The library emulates a dynamic process by a quantum circuit, including initializing a quantum state, executing quantum operators, and measuring the final state. It utilizes collective processes in spin ensembles to reduce the dimension from exponentially to quadratically with the number of particles, i.e., the quantum state spans in Dicke basis. It also facilitates the simulation time with multi-core processors and Graphics Processing Units. The library is thus applicable for the simulation of ensembles of large number of particles that have collective properties. Various phenomena, such as spin squeezing, variational quantum squeezing, quantum phase transition, and many-body quantum dynamics, can be simulated using the library.

quant-ph↗

arXiv2021

Spin and anomalous Hall effects emerging from topological degeneracy in Dirac fermion system CuMnAs

Orthorhombic CuMnAs has been proposed as an antiferromagnetic semimetal hosting nodal line and Dirac points around the Fermi level. We investigate relations between the topological bands and transport phenomena, i.e. spin Hall effect and anomalous Hall effect, in orthorhombic CuMnAs with first-principles calculations combined with symmetry analysis of magnetic structures and of (spin) Berry curvature. We show the nodal line gapped with spin-orbit coupling in CuMnAs dominantly generates large spin Hall conductivity in the ground state. Although the magnetic symmetry in the ground state of CuMnAs forbids the finite anomalous Hall effect, applied magnetic fields produce a significant anomalous component of the Hall conductivity with the magnetic symmetry breaking. We identify that the dominant contribution to anomalous Hall components comes from further lifting of band degeneracy under external magnetic fields for the Bloch states generated with splitting of nodal lines by spin-orbit coupling near Fermi energy.

cond-mat.str-el↗

arXiv2019

Topology analysis for anomalous Hall effect in the non-collinear antiferromagnetic states of Mn$_3\mathit{A}$N ($A$ = Ni, Cu, Zn, Ga, Ge, Pd, In, Sn, Ir, Pt)

We investigate topological features of electronic structures which produce large anomalous Hall effect in the non-collinear antiferromagnetic metallic states of anti-perovskite manganese nitrides by first-principles calculations. We first predict the stable magnetic structures of these compounds to be non-collinear antiferromagnetic structures characterized by either $T_{1g}$ or $T_{2g}$ irreducible representation by evaluating the total energy for all of the magnetic structures classified according to the symmetry and multipole moments. The topology analysis is next performed for the Wannier tight-binding models obtained from the first-principles band structures. Our results reveal the small Berry curvature induced through the coupling between occupied and unoccupied states with the spin-orbit coupling, which is widely spread around the Fermi surface in the Brillouin zone, dominantly contributes after the $k$-space integration to the anomalous Hall conductivity, while the local divergent Berry curvature around Weyl points has a rather small contribution to the anomalous Hall conductivity.

cond-mat.mtrl-sci↗