arXiv subjects

Vyacheslav V. Marchenkov

Publications and source records attributed to Vyacheslav V. Marchenkov.

2 recordsLinked to original sources

arXiv2026

Is it possible to determine unambiguously the Berry phase solely from quantum oscillations?

The Berry phase, a fundamental geometric phase in quantum systems, has become a crucial tool for probing the topological properties of materials. Quantum oscillations, such as Shubnikov-de Haas (SdH) oscillations, are widely used to extract this phase, but its unambiguous determination remains challenging. This work highlights the inherent ambiguities in interpreting the oscillation phase solely from SdH data, primarily due to the influence of the spin factor $R_S$, which depends on the Landé $g$-factor and effective mass. While the Lifshitz-Kosevich (LK) theory provides a framework for analyzing oscillations, the unknown g-factor introduces significant uncertainty. For instance, a zero oscillation phase could arise either from a nontrivial Berry phase or a negative $R_S$. We demonstrate that neglecting $R_S$ in modern studies, especially for topological materials with strong spin-orbit coupling, can lead to doubtful conclusions. Through theoretical analysis and numerical examples, we show how the interplay between the Berry phase and Zeeman effect complicates phase determination. Additionally, we also discuss another underappreciated mechanism - the magnetic field dependence of the Fermi level. Our discussion underscores the need for complementary experimental techniques to resolve these ambiguities and calls for further research to refine the interpretation of quantum oscillations in topological systems.

cond-mat.mtrl-sci↗

arXiv2025

Co$_2$MnZ (Z = Al, Si, Ga, Ge, Sn) Heusler alloys as candidate materials for spintronic and microelectronic applications: Electronic structure, transport, and magnetism

Magnetic and electronic transport properties of Co$_2$MnZ (Z = Al, Ga, Ge, Si, Sn) Heusler alloys were experimentally investigated. Electrical resistivity, in the temperature range from 4.2 to 300 K, as well as field dependences of the Hall effect and magnetization at T = 4.2 K in magnetic fields up to 100 kOe and 70 kOe, respectively, were measured. Experimental data are in good agreement with the results of the theoretical DFT calculations of the electronic structure and magnetic moments. In the band structure of Co$_2$MnSi, half-metallicity is formed with the full spin polarization and the half-metallic gap of about 0.6 eV. In Co$_2$MnZ (Z = Al, Ge, Sn), it is shifted from the Fermi energy by the hole pockets at the point $Γ$, preventing thereby the formation of the half-metallic state. In a peculiar case of Co$_2$MnGa, the antisite defects are expected to determine structural and electronic properties. For the Co$_2$MnAl and Co$_2$MnGa topological semimetals, Weyl topological points are found at the Fermi energy; however, for Z = Si, Ge, Si, these features are located deeper within to the valence band. The results show that Co$_2$MnGe and Co$_2$MnSn are usual ferromagnets, Co$_2$MnAl and Co$_2$MnGa alloys are topological semimetals that can find application in microelectronics, while Co$_2$MnSi is a half-metallic ferromagnet that is in high demand in spintronics.

cond-mat.mtrl-sci↗