arXiv subjects

W. G. van der Wiel

Publications and source records attributed to W. G. van der Wiel.

26 records · Page 2Linked to original sources

arXiv2001

Two-stage Kondo effect in a quantum dot at high magnetic field

We report a strong Kondo effect (Kondo temperature ~ 4K) at high magnetic field in a selective area growth semiconductor quantum dot. The Kondo effect is ascribed to a singlet-triplet transition in the ground state of the dot. At the transition, the low-temperature conductance approaches the unitary limit. Away from the transition, for low bias voltages and temperatures, the conductance is sharply reduced. The observed behavior is compared to predictions for a two-stage Kondo effect in quantum dots coupled to single-channel leads.

cond-mat.mes-hall↗

arXiv2001

Electro-magnetic Aharonov-Bohm effect in a 2-D electron gas ring

We define a mesoscopic ring in a 2-dimensional electron gas (2DEG) interrupted by two tunnel barriers, enabling us to apply a well-defined potential difference between the two halves of the ring. The electron interference in the ring is modified using a perpendicular magnetic field and a bias voltage. We observe clear Aharonov-Bohm oscillations up to the quantum Hall regime as a function of both parameters. The electron travel time between the barriers is found to increase with the applied magnetic field. Introducing a scattering model, we develop a new method to measure the non-equilibrium electron dephasing time, which becomes very short at high voltages and magnetic fields. The relevance of electron-electron interactions is discussed.

cond-mat.mes-hall↗

arXiv2000

Electron Cotunneling in a Semiconductor Quantum Dot

We report transport measurements on a semiconductor quantum dot with a small number of confined electrons. In the Coulomb blockade regime, conduction is dominated by cotunneling processes. These can be either elastic or inelastic, depending on whether they leave the dot in its ground state or drive it into an excited state, respectively. We are able to discriminate between these two contributions and show that inelastic events can occur only if the applied bias exceeds the lowest excitation energy. Implications to energy-level spectroscopy are discussed.

cond-mat.mes-hall↗

arXiv2000

The Kondo Effect in the Unitary Limit

We observe a strong Kondo effect in a semiconductor quantum dot when a small magnetic field is applied. The Coulomb blockade for electron tunneling is overcome completely by the Kondo effect and the conductance reaches the unitary-limit value. We compare the experimental Kondo temperature with the theoretical predictions for the spin-1/2 Anderson impurity model. Excellent agreement is found throughout the Kondo regime. Phase coherence is preserved when a Kondo quantum dot is included in one of the arms of an Aharonov-Bohm ring structure and the phase behavior differs from previous results on a non-Kondo dot.

cond-mat.mes-hall↗

arXiv2000

Kondo effect in an integer-spin quantum dot

The Kondo effect is a key many-body phenomenon in condensed matter physics. It concerns the interaction between a localised spin and free electrons. Discovered in metals containing small amounts of magnetic impurities, it is now a fundamental mechanism in a wide class of correlated electron systems. Control over single, localised spins has become relevant also in fabricated structures due to the rapid developments in nano-electronics. Experiments have already demonstrated artificial realisations of isolated magnetic impurities at metallic surfaces, nanometer-scale magnets, controlled transitions between two-electron singlet and triplet states, and a tunable Kondo effect in semiconductor quantum dots. Here, we report an unexpected Kondo effect realised in a few-electron quantum dot containing singlet and triplet spin states whose energy difference can be tuned with a magnetic field. This effect occurs for an even number of electrons at the degeneracy between singlet and triplet states. The characteristic energy scale is found to be much larger than for the ordinary spin-1/2 case.

cond-mat.mes-hall↗

arXiv2000

Direct Coulomb and Exchange Interaction in Artificial Atoms

We determine the contributions from the direct Coulomb and exchange interactions to the total interaction in semiconductor artificial atoms. We tune the relative strengths of the two interactions and measure them as a function of the number of confined electrons. We find that electrons tend to have parallel spins when they occupy nearly degenerate single-particle states. We use a magnetic field to adjust the single-particle state degeneracy, and find that the spin-configurations in an arbitrary magnetic field are well explained in terms of two-electron singlet and triplet states.

cond-mat.mes-hall↗

arXiv1998

Microwave spectroscopy on a quantum-dot molecule

Quantum dots are small conductive regions in a semiconductor, containing a variable number of electrons (N=1 to 1000) that occupy well defined discrete quantum states. They are often referred to as artificial atoms with the unique property that they can be connected to current and voltage contacts. This allows one to use transport measurements to probe the discrete energy spectra. To continue the analogy with atoms, two quantum dots can be connected to form an 'artificial molecule'. Depending on the strength of the inter-dot coupling, the two dots can have an ionic binding (i.e. electrons are localized on the individual dots) or a covalent binding (i.e. electrons are delocalized over both dots). The covalent binding leads to a bonding and an anti-bonding state with an energy splitting proportional to the tunnel coupling. In the dc current response to microwave excitation we observe a transition from an ionic bonding to a covalent bonding, when we vary the inter-dot coupling strength. This demonstrates controllable quantum coherence in single electron devices.

cond-mat.mes-hall↗

arXiv1998

Spontaneous Emission Spectrum in Double Quantum Dot Devices

A double quantum dot device is a tunable two-level system for electronic energy states. A dc electron current directly measures the rates for elastic and inelastic transitions between the two levels. For inelastic transitions energy is exchanged with bosonic degrees of freedom in the environment. The inelastic transition rates are well described by the Einstein coefficients, relating absorption with stimulated and spontaneous emission. The most effectively coupled bosons in the specific environment of our semiconductor device are acoustic phonons. The experiments demonstrate the importance of vacuum fluctuations in the environment for little circuits of coherent quantum devices.

cond-mat.mes-hall↗