arXiv subjects

W. Geng

Publications and source records attributed to W. Geng.

4 recordsLinked to original sources

arXiv2018

Hybrid integrated optical waveguides in glass for enhanced visible photoluminescence of nanoemitters

Integrated optical devices able to control light matter interactions on the nanoscale have attracted the attention of the scientific community in recent years. However, most of these devices are based on silicon waveguides, limiting their use for telecommunication wavelengths. In this contribution, we propose an integrated device that operates with light in the visible spectrum. The proposed device is a hybrid structure consisting of a high-refractive-index layer placed on top of an ion-exchanged glass waveguide. We demonstrate that this hybrid structure serves as an efficient light coupler for the excitation of nanoemitters. The numerical and experimental results show that the device can enhance the electromagnetic field confinement up to 11 times, allowing a higher photoluminescence signal from nanocrystals placed on its surface. The designed device opens new perspectives in the generation of new optical devices suitable for quantum information or for optical sensing.

physics.app-ph↗

arXiv2016

A concentric plasmonic platform for the efficient excitation of surface plasmon-polaritons

We propose a plasmonic device consisting of a concentric ring grating acting as an efficient tool for directional launching and detection of surface plasmon-polaritons (SPPs). Numerical simulations and optical characterizations are used to study the fabricated structured gold surface. We demonstrate that this circularly symmetrical plasmonic device provides an efficient interface between free space radiation and SPPs. This structure offers an excellent platform for the study of hybrid plasmonics in general and of plasmon-emitter couplings in particular, such as those occurring when exciting dye molecules placed inside the ring. As illustrated in this work, an interesting property of the device is that the position of excitation determines the direction of propagation of the SPPs, providing a flexible mean of studying their interactions with molecules or dipole-like emitters placed on the surface.

cond-mat.mes-hall↗

arXiv2015

Localised excitation of a single photon source by a nanowaveguide

Nowadays, integrated photonics is a key technology in quantum information processing (QIP) but achieving all-optical buses for quantum networks with efficient integration of single photon emitters remains a challenge. Photonic crystals and cavities are good candidates but do not tackle how to effectively address a nanoscale emitter. Using a nanowire nanowaveguide, we realise an hybrid nanodevice which locally excites a single photon source (SPS). The nanowire acts as a passive or active sub-wavelength waveguide to excite the quantum emitter. Our results show that localised excitation of a SPS is possible and is compared with free-space excitation. Our proof of principle experiment presents an absolute addressing efficiency ηa = 10-4 only 50% lower than the one using free-space optics. This important step demonstrates that sufficient guided light in a nanowaveguide made of a semiconductor nanowire is achievable to excite a single photon source. We accomplish a hybrid system offering great potentials for electrically driven SPSs and efficient single photon collection and detection, opening the way for optimum absorption/emission of nanoscale emitters. We also discuss how to improve the addressing efficiency of a dipolar nanoscale emitter with our system.

quant-ph↗

arXiv2015

Characterisations of ohmic and Schottky contacts of a single ZnO nanowire

Current voltage and Kelvin Probe Force Microscopy (KPFM) measurements were performed on single ZnO nanowires. Measurements are shown to be strongly correlated with the contact behavior, either ohmic or Schottky. The ZnO nanowires were obtained by metallo-organic chemical vapor deposition (MOCVD) and contacted using electronic-beam lithography. Depending on the contact geometry, good quality ohmic contacts (linear I V behavior) or non-linear (diode like) Schottky contacts were obtained. Current voltage and KPFM measurements on both types of contacted ZnO nanowires were performed in order to investigate their behavior. A clear correlation could be established between the I V curve, the electrical potential profile along the device and the nanowire geometry. Some arguments supporting this behavior are given based on a depleted region extension. This work will help to better understand the electrical behavior of ohmic contacts on single ZnO nanowires, for future applications in nanoscale field effect-transistors and nano-photodetectors.

cond-mat.mtrl-sci↗