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W. H. Song

Publications and source records attributed to W. H. Song.

At least 19 recordsLinked to original sources

In-plane and out-of-plane electric dipoles and phase transitions in 2D-layered TlGaS2

Out-of-plane and in-plane electric polarization, which rarely coexist in a two-dimensional (2D) ferroelectric material, offer different advantages in ferroelectricity-based devices. Here, we report the coexistence of in-plane and out-of-plane electric dipoles, along with various phase transitions, in 2D van der Waals layered TlGaS2 single crystal. Quantum paraelectricity was observed along both in-plane and out-of-plane directions of the TlGaS2 crystal. Detailed investigation of the quantum paraelectric soft-mode behavior reveals a close correlation between the electric dipoles and the off-center displacement of Tl1+ ions with 6s2 lone pairs in TlGaS2. Anomalies near temperatures of about 120 K and 60-75 K in dielectric and/or infrared spectra indicate the existence of local or weak long-range structural transitions in TlGaS2. Our results provide important experimental evidence for elucidating the phase transitions and coexistence of in-plane and out-of-plane electric dipoles in 2D layered TlGaS2.

cond-mat.mtrl-sci

Field-induced Topological Hall effect in antiferromagnetic axion insulator candidate EuIn$_2$As$_2$

The magnetic topological materials have attracted significant attention due to their potential realization of variety of novel quantum phenomena. EuIn$_2$As$_2$ has recently been theoretically recognized as a long awaited intrinsic antiferromagnetic bulk axion insulator. However, the experimental study on transport properties arising from the topological states in this material is scarce. In this paper, we perform the detailed magnetoresistance (MR) and Hall measurements to study the magnetotransport properties of this material. We find that the transport is strongly influenced by the spin configuration of the Eu moments from the concomitant change in the field dependence of the MR and that of the magnetization below the Néel temperature. Most importantly, an anomalous Hall effect (AHE) and a large topological Hall effect (THE) are observed. We suggest that the AHE is originated from a nonvanishing net Berry curvature due to the helical spin structure and that the THE is attributed to the formation of a noncoplanar spin texture with a finite scalar spin chirality induced by the external magnetic field in EuIn$_2$As$_2$. Our studies provide a platform to understand the influence of the interplay between the topology of electronic bands and the field-induced magnetic structure on magnetoelectric transport properties. In addition, our observations give a hint to realize axion insulator states and high-order topological insulator states through manipulating the magnetic state of EuIn$_2$As$_2$.

cond-mat.mtrl-sci

Chiral charge density waves induced by Ti-doping in 1T-TaS2

We investigate the Ti-doping effect on the charge density wave (CDW) of 1T-TaS2 by combining scanning tunneling microscopy (STM) measurements and first-principle calculations. Although the Ti-doping induced phase evolution seems regular with increasing of the doping concentration (x), an unexpected chiral CDW phase is observed in the sample with x = 0.08, in which Ti atoms almost fully occupy the central Ta atoms in the CDW clusters. The emergence of the chiral CDW is proposed to be from the doping-enhanced orbital order. Only when x = 0.08, the possible long-range orbital order can trigger the chiral CDW phase. Compared with other 3d-elements doped 1T-TaS2, the Ti-doping retains the electronic flat band and the corresponding CDW phase, which is a prerequisite for the emergence of chirality. We expect that introducing elements with a strong orbital character may induce a chiral charge order in a broad class of CDW systems. The present results open up another avenue for further exploring the chiral CDW materials.

cond-mat.mtrl-sci

Temperature-Induced Lifshitz Transition and Possible Excitonic Instability in ZrSiSe

The nodal-line semimetals have attracted immense interest due to the unique electronic structures such as the linear dispersion and the vanishing density of states as the Fermi energy approaching the nodes. Here, we report temperature-dependent transport and scanning tunneling microscope (spectroscopy) (STM[S]) measurements on nodal-line semimetal ZrSiSe.Our experimental results and theoretical analyses consistently demonstrate that the temperature induces Lifshitz transitions at 80 and 106 K in ZrSiSe, which results in the transport anomalies at the same temperatures. More strikingly, we observe a V-shaped dip structure around Fermi energy from the STS spectrum at low temperature,which can be attributed to co-effect of the spin-orbit coupling and excitonic instability. Our observations indicate the correlation interaction may play an important role in ZrSiSe, which owns the quasi-two-dimensional electronic structures.

cond-mat.mtrl-sci

Superconducting and Topological Properties in Centrosymmetric PbTaS2 Single Crystals

We report the superconductivity of PbTaS2 single crystals with the centrosymmetric structure. The systematic measurements of magnetization, electric transport and specific heat indicate that PbTaS2 is a weakly coupled type-II superconductor with transition temperature Tc = 2.6 K. Furthermore, the band structure calculations predicted four nodal lines near the Fermi energy with drumhead-like surface states, suggesting centrosymmetric PbTaS2 is a candidate of topological nodal line semimetals. These results demonstrate that PbTaS2 may open up another avenue for further exploring the properties of superconductivity and topological nodal-line states.

cond-mat.supr-con

Observation of a pressure-induced transition from interlayer ferromagnetism to intralayer antiferromagnetism in Sr4Ru3O10

Sr4Ru3O10 is a Ruddlesden-Popper compound with triple Ru-O perovskite layers separated by Sr-O alkali layers. This compound presents a rare coexistence of interlayer (c-axis) ferromagnetism and intralayer (basal-plane) metamagnetism at ambient pressure. Here we report the observation of pressure-induced, intralayer itinerant antiferromagnetism arising from the interlayer ferromagnetism. The application of modest hydrostatic pressure generates an anisotropy that causes a flattening and a tilting of RuO6 octahedra. All magnetic and transport results from this study indicate these lattice distortions diminish the c-axis ferromagnetism and basal-plane metamagnetism, and induce a basal-plane antiferromagnetic state. The unusually large magnetoelastic coupling and pressure tunability of Sr4Ru3O10 makes it a unique model system for studies of itinerant magnetism.

cond-mat.str-el

Mermin-Wagner physics, (H,T) phase diagram, and candidate quantum spin-liquid phase in the spin-1/2 triangular-lattice antiferromagnet Ba8CoNb6O24

Ba$_8$CoNb$_6$O$_{24}$ presents a system whose Co$^{2+}$ ions have an effective spin 1/2 and construct a regular triangular-lattice antiferromagnet (TLAFM) with a very large interlayer spacing, ensuring purely two-dimensional character. We exploit this ideal realization to perform a detailed experimental analysis of the $S = 1/2$ TLAFM, which is one of the keystone models in frustrated quantum magnetism. We find strong low-energy spin fluctuations and no magnetic ordering, but a diverging correlation length down to 0.1 K, indicating a Mermin-Wagner trend towards zero-temperature order. Below 0.1 K, however, our low-field measurements show an nexpected magnetically disordered state, which is a candidate quantum spin liquid. We establish the $(H,T)$ phase diagram, mapping in detail the quantum fluctuation corrections to the available theoretical analysis. These include a strong upshift in field of the maximum ordering temperature, qualitative changes to both low- and high-field phase boundaries, and an ordered regime apparently dominated by the collinear "up-up-down" state. Ba$_8$CoNb$_6$O$_{24}$ therefore offers fresh input for the development of theoretical approaches to the field-induced quantum phase transitions of the $S = 1/2$ Heisenberg TLAFM.

cond-mat.str-el

Critical behavior of two-dimensional intrinsically ferromagnetic semiconductor CrI3

CrI3, which belongs to a rare category of two-dimensional (2D) ferromagnetic semiconductors, is of great interest for spintronic device applications. Unlike CrCl3 whose magnetism presents a 2D-Heisenberg behavior, CrI3 exhibits a larger van der Waals gap, smaller cleavage energy, and stronger magnetic anisotropy which could lead to a 3D magnetic characteristic. Hence, we investigate the critical behavior of CrI3 in the vicinity of magnetic transition. We use the modified Arrott plot and Kouvel-Fisher method, and conduct critical isotherm analysis to estimate the critical exponents near the ferromagnetic phase transition. This shows that the magnetism of CrI3 follows the crossover behavior of a 3D-Ising model with mean field type interactions where the critical exponents \b{eta}, γ, and δ are 0.323, 0.835, and 3.585, respectively, at the Curie temperature of 64 K. We propose the crossover behavior can be attributed to the strong uniaxial anisotropy and inevitable interlayer coupling. Our experiment demonstrates the applicability of crossover behavior to a 2D ferromagnetic semiconductor.

cond-mat.mtrl-sci

Magnetoelectric and Raman spectroscopic studies of single-crystalline MnCr2O4

MnCr2O4 that exhibits spin frustration and complex spiral spin order is of great interest from both fundamental as well as application-oriented perspectives. Unlike CoCr2O4 whose ground state presents the coexistence of commensurate spiral spin order (CSSO) and ferroelectric order, MnCr2O4 shows no multiferroicity. One reason is that the spiral spin order is highly sensitive to the oxygen concentration in MnCr2O4. Here, we have successfully grown high-quality single-crystalline MnCr2O4 by the chemical vapor transport method. We observe a new first-order magnetic transition from the incommensurate spiral spin order (ICSSO) at 19.4 K to the CSSO at 17.4 K. This magnetic transition is verified by magnetization, specific heat, and magnetoelectric measurements, which also confirm that the ground state exhibits the coexistence of the CSSO and magnetoelectricity below 17.4 K. Interestingly, the temperature evolution of Raman spectra between 5.4 and 300 K suggests that the structure remains the same. We also find that the phase-transition temperature of the CSSO decreases as applied magnetic field increases up to 45 kOe.

cond-mat.mtrl-sci

Experimental Approach to the Thermodynamics of the Pure Two-Dimensional Spin-1/2 Triangular Lattice Antiferromagnet in Ba8CoNb6O24

Frustrated quantum magnets pose well-defined questions concerning quantum fluctuation effects and the nature of the many-body wavefunction, which challenge theory, numerics, experiment and materials synthesis. The S = 1/2 triangular-lattice antiferromagnet (TLAF) presents a case where classical order is strongly suppressed by quantum fluctuations, leading to extensive renormalization of physical properties at all energy scales. However, purely two-dimensional (2D) models are difficult to realise in the 3D world and their physics is controlled by the Mermin-Wagner theorem, which describes the dominant effects of additional thermal fluctuations. Here we report the magnetic properties Ba8CoNb6O24, whose Co2+ions have an effective spin 1/2 and construct a regular TLAF with very large interlayer spacing. We find no magnetic ordering down to 0.028 K, strong low-energy spin fluctuations in qualitative agreement with theoretical analysis and a diverging correlation length, all indicating a Mermin-Wagner trend towards zero-temperature ordering in this ideal 2D system.

cond-mat.str-el

The origin of the turn-on phenomenon in Td-MoTe2

We did the resistivity and scanning tunneling microscope/spectroscopy (STM/STS) experiments at different temperatures and magnetic fields to investigate the origin of the turn-on (t-o) phenomenon of Td-MoTe2. There are two interesting observations. Firstly, magnetoresistance (MR) follows the Kohler rule scaling: MR - (H/p0)m with m - 1.92 and the t-o temperature T under different magnetic fields can also be scaled by T - (H-Hc)u with u = 1/2. Secondly, a combination of compensated electron-hole pockets and a possible electronic structure phase transition induced by the temperature have been validated in Td-MoTe2 by the STM/STS experiments. Compared with the STS of Td-MoTe2 single crystal under H = 0, the STS hardly changes even when the applied field is up to 7 T. The origins of the t-o phenomenon in Td-MoTe2 are discussed. Meanwhile, we analyzed the universality and applicability of the t-o phenomenon in the extreme MR materials with almost balanced hole and electron densities as well as with other systems where the density of hole or electron is in dominant position.

cond-mat.mtrl-sci

Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se

Cr0.68Se single crystals with two-dimensional (2D) character have been grown, and the detailed magnetization M(T), electrical transport properties (including longitudinal resistivity and Hall resistivity and thermal transport ones (including heat capacity Cp(T) and thermoelectric power (TEP) S(T)) have been measured. There are some interesting phenomena: (i) Cr0.68Se presents a non-collinear antiferromagnetic (AFM) semiconducting behavior with the Neel temperature TN = 42 K and the activated energy Eg=3.9 meV; (ii) It exhibits the anomalous Hall effect (AHE) below TN and large negative magnetoresistance (MR) about 83.7% (2 K, 8.5 T). The AHE coefficient RS is 0.385 cm-3/C at T=2 K and the AHE conductivity σH is about 1 ohm-1cm-1 at T=40 K, respectively; (iii) The scaling behavior between the anomalous Hall resistivity and the longitudinal resistivity is linear and further analysis implies that the origin of the AHE in Cr0.68Se is dominated by the skew-scattering mechanism. Our results may be helpful for exploring the potential application of these kind of 2D AFM semiconductors.

cond-mat.mtrl-sci

Manipulating charge-density-wave in monolayer $1T$-TiSe$_2$ by strain and charge doping: A first-principles investigation

We investigate the effects of the in-plane biaxial strain and charge doping on the charge density wave (CDW) order of monolayer $1T$-TiSe$_2$ by using the first-principles calculations. Our results show that the tensile strain can significantly enhance the CDW order, while both compressive strain and charge doping (electrons and holes) suppress the CDW instability. The tensile strain may provide an effective method for obtaining higher CDW transition temperature on the basis of monolayer $1T$-TiSe$_2$. We also discuss the potential superconductivity in charge-doped monolayer $1T$-TiSe$_2$. Controllable electronic phase transition from CDW state to metallic state or even superconducting state can be realized in monolayer $1T$-TiSe$_2$, which makes $1T$-TiSe$_2$ possess a promising application in controllable switching electronic devices based on CDW.

cond-mat.mtrl-sci

The extremely large magnetoresistance in the Candidate Type-II Weyl semimetal MoTe2

We performed the angle dependent magnetoresistance (MR), Hall effect measurements, the temperature dependent magneto-thermoelectric power (TEP) S(T) measurements, and the first-principles calculations to study the electronic properties of orthorhombic phase MoTe2 (Td-MoTe2), which was proposed to be electronically two-dimensional (2D). There are some interesting findings about Td-MoTe2: (1) A scaling approach εθ=(sin2θ+γ-2cos2θ)1/2 is applied, where θ is the magnetic field angle with respect to the c axis of the crystal and γ is the mass anisotropy. Unexpectedly, the electronically 3D character with γ as low as 1.9 is observed in Td-MoTe2; (2) The possible Lifshitz transition and the following electronic structure change can be verified around T~150 K and T~60 K, which is supported by the evidence of the slop changing of the temperature dependence of TEP, the carrier density extracted from Hall resistivity and the onset temperature of γ obtained from the MR measurements. The extremely large MR effect in Td-MoTe2 could originate from the combination of the electron-hole compensation and a particular orbital texture on the electron pocket, which is supported by the calculations of electronic structure. Our results may provide a general scaling relation for the anisotropic MR and help to recognize the origins of the MR effect in other systems, such as the Weyl semimetals and the Dirac ones.

cond-mat.str-el

Tricritical behavior of two-dimensional intrinsic ferromagnetic semiconducting CrGeTe3

CrGeTe3 recently emerges as a new two-dimensional (2D) ferromagnetic semiconductor that is promising for spintronic device applications. Unlike CrSiTe3 whose magnetism can be understood using the 2D-Ising model, CrGeTe3 exhibits a smaller van der Waals gap and larger cleavage energy, which could lead to a transition of magnetic mechanism from 2D to 3D. To confirm this speculation, we investigate the critical behavior CrGeTe3 around the second-order paramagnetic-ferromagnetic phase transition. We obtain the critical exponents estimated by several common experimental techniques including the modified Arrott plot, Kouvel-Fisher method and critical isotherm analysis, which show that the magnetism of CrGeTe3 follows the tricritical mean-field model with the critical exponents \b{eta}, γ, and δ of 0.240, 1.000, and 5.070, respectively, at the Curie temperature of 67.9 K. We therefore suggest that the magnetic phase transition from 2D to 3D for CrGeTe3 should locate near a tricritical point. Our experiment provides a direct demonstration of the applicability of the tricritical mean-field model to a 2D ferromagnetic semiconductor.

cond-mat.str-el

Pressure Induced Stripe-order Antiferromagnetism and First-order Phase Transition in FeSe

To elucidate the magnetic structure and the origin of the nematicity in FeSe, we perform a high-pressure $^{77}$Se NMR study on FeSe single crystals. We find a suppression of the structural transition temperature with pressure up to about 2 GPa from the anisotropy of the Knight shift. Above 2 GPa, a stripe-order antiferromagnetism that breaks the spatial four-fold rotational symmetry is determined by the NMR spectra under different field orientations and with temperatures down to 50 mK. The magnetic phase transition is revealed to be first-order type, implying the existence of a concomitant structural transition via a spin-lattice coupling. Stripe-type spin fluctuations are observed at high temperatures, and remain strong with pressure. These results provide clear evidences for strong coupling between nematicity and magnetism in FeSe, and therefore support a universal scenario of magnetic driven nematicity in iron-based superconductors.

cond-mat.supr-con

Magnetic evolution of Spinel Mn1-xZnxCr2O4 single crystals

Mn1-xZnxCr2O4 (0<x<1) single crystals have been grown by the chemical vapor transport (CVT) method. The crystallographic, magnetic, and thermal transport properties of the single crystals were investigated by the room-temperature X-ray diffraction, magnetization M(T) and specific heat CP(T) measurements. Mn1-xZnxCr2O4 crystals show a cubic structure, the lattice constant a decreases with the increasing content x of the doped Zn2+ ions and follows the Vegard law. Based on the magnetization and heat capacity measurements, the magnetic evolution of Mn1-xZnxCr2O4 crystals has been discussed. For 0<x<0.3, the magnetic ground state is the coexistence of the collinear ferrimagnetic order (CFIM) and spiral ferrimagnetic one (SFIM), which is similar to that of the parent MnCr2O4. When x changes from 0.3 to 0.8, the SFIM is progressively suppressed and spin glass-like behavior is observed. When x is above 0.8, an antiferromagnetic (AFM) order presents. At the same time, the magnetic specific heat (Cmag.) was also investigated and the results are coincident with the magnetic measurements. The possible reasons based on the disorder effect and the reduced molecular field effect induced by the substitution of Mn2+ ions by nonmagnetic Zn2+ ones in Mn1-xZnxCr2O4 crystals have been discussed.

cond-mat.str-el

Spin dynamics, electronic and thermal transport properties of two-dimensional CrPS4 single crystal

2-Dimensional (2D) CrPS4 single crystals have been grown by the chemical vapor transport method. The crystallographic, magnetic, electronic and thermal transport properties of the single crystals were investigated by the room-temperature X-ray diffraction, electrical resistivity \r{ho}(T), specific heat CP(T) and the electronic spin response (ESR) measurements. CrPS4 crystals crystallize into a monoclinic structure. The electrical resistivity \r{ho}(T) shows a semiconducting behavior with an energy gap Ea=0.166 eV. The antiferromagntic (AFM) transition temperature is about TN=36 K. The spin flipping induced by the applied magnetic field is observed along the c axis. The magnetic phase diagram of CrPS4 single crystal has been discussed. The extracted magnetic entropy at TN is about 10.8 J/mol K, which is consistent with the theoretical value R ln(2S + 1) for S = 3/2 of the Cr3+ ion. Based on the mean-field theory, the magnetic exchange constants J1 and Jc corresponding to the interactions of the intralayer and between layers are about 0.143 meV and -0.955 meV are obtained based on the fitting of the susceptibility above TN, which agree with the results obtained from the ESR measurements. With the help of the strain for tuning the magnetic properties, monolayer CrPS4 may be a promising candidate to explore 2D magnetic semiconductors.

cond-mat.str-el