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W. Jantsch

Publications and source records attributed to W. Jantsch.

11 recordsLinked to original sources

Valence state and lattice incorporation of Ni in Zn/Co-based magnetic oxides

Ni incorporation has been studied in a comprehensive range of Zn/Co-based magnetic oxides to elucidate it valence state and lattice incorporation. The resulting structural and magnetic properties are studied in detail. To the one end Ni in incorporated by in-diffusion as well as reactive magnetron co-sputtering in wurtzite ZnO where only the Ni-diffused ZnO exhibits significant conductivity. This is complemented by Ni and Co codoping of ZnO leading. To the other end, the ZnCo$_2$O$_4$ spinel is co-doped with varying amounts of Ni. In the wurtzite oxides Ni is exclusively found on tetrahedral lattice sites in its formal 2+ oxidation state as deep donor. It behaves as an anisotropic paramagnet and a limited solubility of Ni about 10\% is found. Due to its smaller magnetic moment it can induce partial uncompensation of the Co magnetic moments due to antiferromagnetic coupling. In the spinel Ni is found to be incorporated in its formal 3+ oxidation state on octahedral sites and couples antiferromagnetically to the Co moments leading again to magnetic uncompensation of the otherwise antiferromagnetic ZnCo$_2$O$_4$ spinel and to ferrimagnetism at higher Ni concentrations. Increasing Ni even further leads to phase separation of cubic NiO resulting in an exchange-biased composite magnetic oxide.

cond-mat.mtrl-sci

Efficient room-temperature light-emitters based on partly amorphised Ge quantum dots in crystalline Si

Semiconductor light emitters compatible with standard Si integration technology (SIT) are of particular interest for overcoming limitations in the operating speed of microelectronic devices 1-3. Light sources based on group-IV elements would be SIT compatible but suffer from the poor optoelectronic properties of bulk Si and Ge. Here, we demonstrate that epitaxially grown Ge quantum dots (QDs) in a fully coherent Si matrix show extraordinary optical properties if partially amorphised by Ge-ion bombardment (GIB). The GIB-QDs exhibit a quasi-direct-band gap and show, in contrast to conventional SiGe nanostructures, almost no thermal quenching of the photoluminescence (PL) up to room-temperature (RT). Microdisk resonators with embedded GIB-QDs exhibit threshold-behaviour and super-linear increase of the integrated PL-intensity (IPL) with increasing excitation power Pexc which indicates light amplification by stimulated emission in a fully SIT-compatible group-IV nano-system.

cond-mat.mes-hall

Indirect Exchange Interaction in Fully Metal-Semiconductor Separated SWCNTs Revealed by ESR

The ESR response from highly metal-semiconductor(M-SC) separated SWCNTs for temperatures T between 0.39 and 200 K is characteristically different for the two systems. The signal originates from defect spins but interaction with free electrons leads to a larger line width for M tubes. The latter decreases with increasing T whereas it increases with T for SC tubes. The spins undergo a ferromagnetic phase transition below around 10 K. Indirect exchange is suggested to be responsible for the spin-spin interaction, supported by RKKY interaction in the case of M tubes. For SC tubes spin-lattice relaxation via an Orbach process is suggested to determine the line width.

cond-mat.mtrl-sci

Experimental probing of exchange interactions between localized spins in the dilute magnetic insulator (Ga,Mn)N

The sign, magnitude, and range of the exchange couplings between pairs of Mn ions is determined for (Ga,Mn)N and (Ga,Mn)N:Si with x < 3%. The samples have been grown by metalorganic vapor phase epitaxy and characterized by secondary-ion mass spectroscopy; high-resolution transmission electron microscopy with capabilities allowing for chemical analysis, including the annular dark-field mode and electron energy loss spectroscopy; high-resolution and synchrotron x-ray diffraction; synchrotron extended x-ray absorption fine-structure; synchrotron x-ray absorption near-edge structure; infra-red optics and electron spin resonance. The results of high resolution magnetic measurements and their quantitative interpretation have allowed to verify a series of ab initio predictions on the possibility of ferromagnetism in dilute magnetic insulators and to demonstrate that the interaction changes from ferromagnetic to antiferromagnetic when the charge state of the Mn ions is reduced from 3+ to 2+.

cond-mat.mtrl-sci

Spin Dependent Joule Heating due to Rashba Coupling and Zitterbewegung

Investigating microwave absorption in asymmetric Si quantum wells in an external magnetic field, we discover a spin dependent component of Joule heating at spin resonance. We explain this effect in terms of Rashba spin-orbit coupling which results in a current induced spin precession and Zitterbewegung. Evidence is based on the observation of a specific dependence of the electron spin resonance line shape and its amplitude on the experimental geometry which in some range suggests a "negative" differential power absorption.

cond-mat.mtrl-sci

Paramagnetic GaN:Fe and ferromagnetic (Ga,Fe)N - relation between structural, electronic, and magnetic properties

We report on the metalorganic chemical vapor deposition (MOCVD) of GaN:Fe and (Ga,Fe)N layers on c-sapphire substrates and their thorough characterization via high-resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), spatially-resolved energy dispersive X-ray spectroscopy (EDS), secondary-ion mass spectroscopy (SIMS), photoluminescence (PL), Hall-effect, electron-paramagnetic resonance (EPR), and magnetometry employing a superconducting quantum interference device (SQUID). A combination of TEM and EDS reveals the presence of coherent nanocrystals presumably FexN with the composition and lattice parameter imposed by the host. From both TEM and SIMS studies, it is stated that the density of nanocrystals and, thus the Fe concentration increases towards the surface. In layers with iron content x<0.4% the presence of ferromagnetic signatures, such as magnetization hysteresis and spontaneous magnetization, have been detected. We link the presence of ferromagnetic signatures to the formation of Fe-rich nanocrystals, as evidenced by TEM and EDS studies. This interpretation is supported by magnetization measurements after cooling in- and without an external magnetic field, pointing to superparamagnetic properties of the system. It is argued that the high temperature ferromagnetic response due to spinodal decomposition into regions with small and large concentration of the magnetic component is a generic property of diluted magnetic semiconductors and diluted magnetic oxides showing high apparent Curie temperature.

cond-mat.mtrl-sci

Pure spin currents induced by spin-dependent scattering processes in SiGe quantum well structures

We show that spin-dependent electron-phonon interaction in the energy relaxation of a two-dimensional electron gas results in equal and oppositely directed currents in the spin-up and spin-down subbands yielding a pure spin current. In our experiments on SiGe heterostructures the pure spin current is converted into an electric current applying a magnetic field that lifts the cancellation of the two partial charge flows. A microscopic theory of this effect, taking account of the asymmetry of the relaxation process, is developed being in a good agreement with the experimental data.

cond-mat.mes-hall

Spin Manipulation of Free 2-Dimensional Electrons in Si/SiGe Quantum Wells

An important requirement for a physical embodiment of a quantum computer is that arbitrary single-qubit operations can be performed. In the case of spin-qubits, this means that arbitrary spin rotations must be possible. Here we demonstrate spin rotations of an ensemble of free 2-dimensional electrons confined to a silicon quantum well embedded in a silicon-germanium alloy host. The spins are manipulated by resonant microwave pulses and an applied magnetic field in a pulsed electron paramagnetic resonance spectrometer. From the pulsed measurements we deduce a spin coherence time in this system of about 3 microsec, allowing at least 100 elementary operations before decoherence destroys the spin state. These measurements represent an important step towards the realization of quantum computation using electron spins in semiconductors, but at the same time establish some constraints on the design of such a system.

cond-mat.mes-hall

The longitudinal spin relaxation of 2D electrons in Si/SiGe quantum wells in a magnetic field

The longitudinal spin relaxation time, T1, in a Si/SiGe quantum well is determined from the saturation of the ESR signal. We find values of a few microseconds. Investigations of T1 as a function of Fermi energy, concentration of scattering centers and of the momentum scattering time lead to the conclusion that for high electron mobility the spin relaxation is ruled by the Dyakonov-Perel (DP) mechanism while for low mobility the Elliott-Yaffet mechanism dominates. The DP relaxation is caused by Bychkov-Rashba coupling. Evaluation of the DP mechanism shows that 1/T1 for high electron mobility can be effectively reduced by an external magnetic field. The effect of the degenerate Fermi-Dirac statistics on the DP process is discussed.

cond-mat.soft

Evaluation of the Bychkov- Rashba Field from the Spin Resonance of Electrons in a Si Quantum Well

From spin resonance of two-dimensional (2D) conduction electrons in a modulation doped SiGe/Si/SiGe quantum well structure we find a 2D anisotropy of both the line broadening (dephasing time) and the g-factor. We show that these can be explained consistently in terms of the Bychkov-Rashba (BR) field which here is the dominant coupling between electron motion and spin. We obtain a BR parameter of alpha = 1.1 e-12 eV cm - three orders of magnitude smaller as compared to III-V wells. Extrapolating for low electron concentrations we obtain a g-factor of the Si conduction band of 2.00073+/-0.00010.

cond-mat.mes-hall

Screening Breakdown on the Route toward the Metal-Insulator Transition in Modulation Doped Si/SiGe Quantum Wells

Exploiting the spin resonance of two-dimensional (2D) electrons in SiGe/Si quantum wells we determine the carrier-density-dependence of the magnetic susceptibility. Assuming weak interaction we evaluate the density of states at the Fermi level D(E_F), and the screening wave vector, q_TF. Both are constant at higher carrier densities n, as for an ideal 2D carrier gas. For n < 3e11 cm-2, they decrease and extrapolate to zero at n = 7e10 cm-2. Calculating the mobility from q_TF yields good agreement with experimental values justifying the approach. The decrease in D(E_F) is explained by potential fluctuations which lead to tail states that make screening less efficient and - in a positive feedback - cause an increase of the potential fluctuations. Even in our high mobility samples the fluctuations exceed the electron-electron interaction leading to the formation of puddles of mobile carriers with at least 1 micrometer diameter.

cond-mat