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W. Knolle

Publications and source records attributed to W. Knolle.

2 recordsLinked to original sources

Laser intracavity absorption magnetometry for optical quantum sensing

Intracavity absorption spectroscopy (ICAS) is a well-established technique for detecting weak absorption signals with ultrahigh sensitivity. Here, we extend this concept to magnetometry using nitrogen-vacancy (NV) centers in diamond. We introduce laser intracavity absorption magnetometry (LICAM), a concept that is in principle applicable to a broader class of optical quantum sensors, including optically pumped magnetometers. Using an electrically driven, edge-emitting diode laser that operates self-sustainably, we show that LICAM enables highly sensitive magnetometers operating under ambient conditions. Near the lasing threshold, we achieve a 475-fold enhancement in optical contrast and a 180-fold improvement in magnetic sensitivity compared with a conventional single-pass geometry. The experimental results are accurately described by a rate-equation model for single-mode diode lasers. From our measurements, we determine a projected shot-noise-limited sensitivity in the $\mathrm{pT}\,\mathrm{Hz}^{-1/2}$ range and simulate that, with realistic device improvements, shot-noise limited sensitivities down to the $\mathrm{fT}\,\mathrm{Hz}^{-1/2}$ scale are attainable.

quant-ph

Quantum enhanced electric field mapping within semiconductor devices

Semiconductor components based on silicon carbide (SiC) are a key component for high-power electronics. Their behavior is determined by the interplay of charges and electric fields, which is typically described by modeling and simulations that are calibrated by nonlocal electric properties. So far, there are no experimental methods that allow for the 3D mapping of both the electric field and the concentrations of free charge carriers inside an electronic device. To fulfill this information gap, we propose an operando method that utilizes single silicon vacancy (VSi) centers in 4H-SiC. The VSi centers are at various positions in the intrinsic region of a pin-diode. To monitor the local static electric field, we perform Stark shift measurements based on photoluminescence excitation (PLE), which allows us to infer the expansion of the depletion zone and therefore to determine the local concentration of dopants. Besides this, we show that our measurements allow us to additionally obtain the local concentration of free charge carriers. The method presented here therefore paves the way for a new quantum-enhanced electronic device technology, capable of mapping the interplay of mobile charges and electric fields in a working semiconductor device with nanometer precision.

quant-ph