arXiv subjects

W. L. Tan

Publications and source records attributed to W. L. Tan.

6 recordsLinked to original sources

arXiv2020

Efficient ground-state cooling of large trapped-ion chains with an EIT tripod scheme

We report the electromagnetically-induced-transparency (EIT) cooling of a large trapped $^{171}$Yb$^+$ ion chain to the quantum ground state. Unlike conventional EIT cooling, we engage a four-level tripod structure and achieve fast sub-Doppler cooling over all motional modes. We observe simultaneous ground-state cooling across the complete transverse mode spectrum of up to $40$ ions, occupying a bandwidth of over $3$ MHz. The cooling time is observed to be less than $300\,μ$s, independent of the number of ions. Such efficient cooling across the entire spectrum is essential for high-fidelity quantum operations using trapped ion crystals for quantum simulators or quantum computers.

quant-ph↗

arXiv2020

Quantum Approximate Optimization of the Long-Range Ising Model with a Trapped-Ion Quantum Simulator

Quantum computers and simulators may offer significant advantages over their classical counterparts, providing insights into quantum many-body systems and possibly improving performance for solving exponentially hard problems, such as optimization and satisfiability. Here we report the implementation of a low-depth Quantum Approximate Optimization Algorithm (QAOA) using an analog quantum simulator. We estimate the ground state energy of the Transverse Field Ising Model with long-range interactions with tunable range and we optimize the corresponding combinatorial classical problem by sampling the QAOA output with high-fidelity, single-shot individual qubit measurements. We execute the algorithm with both an exhaustive search and closed-loop optimization of the variational parameters, approximating the ground state energy with up to 40 trapped-ion qubits. We benchmark the experiment with bootstrapping heuristic methods scaling polynomially with the system size. We observe, in agreement with numerics, that the QAOA performance does not degrade significantly as we scale up the system size, and that the runtime is approximately independent from the number of qubits. We finally give a comprehensive analysis of the errors occurring in our system, a crucial step in the path forward towards the application of the QAOA to more general problem instances.

quant-ph↗

arXiv2019

Observation of Domain Wall Confinement and Dynamics in a Quantum Simulator

Confinement is a ubiquitous mechanism in nature, whereby particles feel an attractive force that increases without bound as they separate. A prominent example is color confinement in particle physics, in which baryons and mesons are produced by quark confinement. Analogously, confinement can also occur in low-energy quantum many-body systems when elementary excitations are confined into bound quasiparticles. Here, we report the first observation of magnetic domain wall confinement in interacting spin chains with a trapped-ion quantum simulator. By measuring how correlations spread, we show that confinement can dramatically suppress information propagation and thermalization in such many-body systems. We are able to quantitatively determine the excitation energy of domain wall bound states from non-equilibrium quench dynamics. Furthermore, we study the number of domain wall excitations created for different quench parameters, in a regime that is difficult to model with classical computers. This work demonstrates the capability of quantum simulators for investigating exotic high-energy physics phenomena, such as quark collision and string breaking.

quant-ph↗

arXiv2018

Cryogenic Trapped-Ion System for Large Scale Quantum Simulation

We present a cryogenic ion trapping system designed for large scale quantum simulation of spin models. Our apparatus is based on a segmented-blade ion trap enclosed in a 4 K cryostat, which enables us to routinely trap over 100 $^{171}$Yb$^+$ ions in a linear configuration for hours due to a low background gas pressure from differential cryo-pumping. We characterize the cryogenic vacuum by using trapped ion crystals as a pressure gauge, measuring both inelastic and elastic collision rates with the molecular background gas. We demonstrate nearly equidistant ion spacing for chains of up to 44 ions using anharmonic axial potentials. This reliable production and lifetime enhancement of large linear ion chains will enable quantum simulation of spin models that are intractable with classical computer modelling.

quant-ph↗

arXiv2017

Non-thermalization in trapped atomic ion spin chains

Linear arrays of trapped and laser cooled atomic ions are a versatile platform for studying emergent phenomena in strongly-interacting many-body systems. Effective spins are encoded in long-lived electronic levels of each ion and made to interact through laser mediated optical dipole forces. The advantages of experiments with cold trapped ions, including high spatiotemporal resolution, decoupling from the external environment, and control over the system Hamiltonian, are used to measure quantum effects not always accessible in natural condensed matter samples. In this review we highlight recent work using trapped ions to explore a variety of non-ergodic phenomena in long-range interacting spin-models which are heralded by memory of out-of-equilibrium initial conditions. We observe long-lived memory in static magnetizations for quenched many-body localization and prethermalization, while memory is preserved in the periodic oscillations of a driven discrete time crystal state.

quant-ph↗

arXiv2013

The Conducting Channel at the LaAlO$_3$/SrTiO$_3$ Interface

Localization of electrons in the two-dimensional electron gas at the LaAlO$_3$/SrTiO$_3$ interface is investigated by varying the channel thickness in order to establish the nature of the conducting channel. Layers of SrTiO$_3$ were grown on NdGaO$_3$ (110) substrates and capped with LaAlO$_3$. When the SrTiO$_3$ thickness is $\leq 6$ unit cells, most electrons at the interface are localized, but when the number of SrTiO$_3$ layers is 8-16, the free carrier density approaches $3.3 \times 10^{14}$ cm$^{-2}$, the value corresponding to charge transfer of 0.5 electron per unit cell at the interface. The number of delocalized electrons decreases again when the SrTiO$_3$ thickness is $\geq 20$ unit cells. The $\sim{4}$ nm conducting channel is therefore located significantly below the interface. The results are explained in terms of Anderson localization and the position of the mobility edge with respect to the Fermi level.

cond-mat.str-el↗