arXiv subjects

W. N. Faugno

Publications and source records attributed to W. N. Faugno.

3 recordsLinked to original sources

arXiv2026

Characterizing the Many Body Localization Crossover as a Metal-Insulator Transition: Localization length from Polarization and Quantum Metric

Many body localization (MBL) represents a unique physical phenomenon, providing a testing ground for exploring thermalization, or more precisely its failure. Here we characterize the MBL regime geometrically by the many-body quantum metric (MBQM), defined in the parameter space of twist boundary, and the localization parameter as defined in the modern theory of polarization and insulators. First, we demonstrate that the quantum metric can be used to characterize disordered insulating states by applying this theoretical framework to excited states of the 1D Anderson insulator. There we observe that the MBQM and localization parameter are related in finite realizations despite the states being gapless in the thermodynamic limit. Then, we consider a disordered 1D Bose-Hubbard model and find that we can characterize the ergodic-MBL crossover by comparing the MBQM and localization parameter. We find that we can extract a natural localization length in the MBL regime that characterizes the real space spread of the wave function and can be measured by extracting the quantum metric. Our analysis provides complementary insight into the MBL regime focusing on its insulating properties and providing a localization length whose definition is consistent across a range of insulating phases.

cond-mat.dis-nn↗

arXiv2022

Revisiting excitation gaps in the fractional quantum Hall effect

Recent systematic measurements of the quantum well width dependence of the excitation gaps of fractional quantum Hall states in high mobility samples [Villegas Rosales {\it et al.}, Phys. Rev. Lett. {\bf 127}, 056801 (2021)] open the possibility of a better quantitative understanding of this important issue. We present what we believe to be accurate theoretical gaps including the effects of finite width and Landau level (LL) mixing. While theory captures the width dependence, there still remains a deviation between the calculated and the measured gaps, presumably caused by disorder. It is customary to model the experimental gaps of the $n/(2n\pm 1)$ states as $Δ_{n/(2n\pm 1)} = Ce^2/[(2n\pm 1)\varepsilon l]-Γ$, where $\varepsilon$ is the dielectric constant of the background semiconductor and $l$ is the magnetic length; the first term is interpreted as the cyclotron energy of composite fermions and $Γ$ as a disorder-induced broadening of composite-fermion LLs. Fitting the gaps for various fractional quantum Hall states, we find that $Γ$ can be nonzero even in the absence of disorder.

cond-mat.str-el↗

arXiv2020

A non-Abelian fractional quantum Hall state at $3/7$ filled Landau level

We consider a non-Abelian candidate state at filling factor $ν=3/7$ state belonging to the parton family. We find that, in the second Landau level of GaAs (i.e. at filling factor $ν=2+3/7$), this state is energetically superior to the standard Jain composite-fermion state and also provides a very good representation of the ground state found in exact diagonalization studies of finite systems. This leads us to predict that \emph{if} a fractional quantum Hall effect is observed at $ν=3/7$ in the second Landau level, it is likely to be described by this new non-Abelian state. We enumerate experimentally measurable properties that can verify the topological structure of this state.

cond-mat.str-el↗