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W. Page

Publications and source records attributed to W. Page.

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Scintillation yield from electronic and nuclear recoils in superfluid $^4$He

Superfluid $^4$He is a promising target material for direct detection of light ($<$ 1 GeV) dark matter. Possible signal channels available for readout in this medium include prompt photons, triplet excimers, and roton and phonon quasiparticles. The relative yield of these signals has implications for the sensitivity and discrimination power of a superfluid $^4$He dark matter detector. Using a 16~cm$^3$ volume of 1.75~K superfluid $^4$He read out by six immersed photomultiplier tubes, we measured the scintillation from electronic recoils ranging between 36.3 and 185 keV$_\mathrm{ee}$, yielding a mean signal size of $1.25^{+0.03}_{-0.03}$~phe/keV$_\mathrm{ee}$, and nuclear recoils from 53.2 to 1090 keV$_\mathrm{nr}$. We compare the results of our relative scintillation yield measurements to an existing semiempirical model based on helium-helium and electron-helium interaction cross sections. We also study the behavior of delayed scintillation components as a function of recoil type and energy, a further avenue for signal discrimination in superfluid $^4$He.

physics.ins-det

Modeling of Impact Ionization and Charge Trapping in SuperCDMS HVeV Detectors

A model for charge trapping and impact ionization, and an experiment to measure these parameters is presented for the SuperCDMS HVeV detector. A procedure to isolate and quantify the main sources of noise (bulk and surface charge leakage) in the measurements is also describe. This sets the stage to precisely measure the charge trapping and impact ionization probabilities in order to incorporate this model into future dark matter searches.

physics.ins-det

Measuring the Impact Ionization and Charge Trapping Probabilities in SuperCDMS HVeV Phonon Sensing Detectors

A 0.93 gram $1{\times}1{\times}0.4$ cm$^3$ SuperCDMS silicon HVeV detector operated at 30 mK was illuminated by 1.91 eV photons using a room temperature pulsed laser coupled to the cryostat via fiber optic. The detector's response under a variety of specific operating conditions was used to study the detector leakage current, charge trapping and impact ionization in the high-purity Si substrate. The measured probabilities for a charge carrier in the detector to undergo charge trapping (0.713 $\pm$ 0.093%) or cause impact ionization (1.576 $\pm$ 0.110%) were found to be nearly independent of bias polarity and charge-carrier type (electron or hole) for substrate biases of $\pm$ 140 V.

physics.ins-det