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W. Shan

Publications and source records attributed to W. Shan.

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Search for $C\!P$ violation and measurement of branching fractions and decay asymmetry parameters for $\Lambda_c^+\to\Lambda h^+$ and $\Lambda_c^+\to\Sigma^{0} h^+$ ($h\!=\!K,\,\pi$)

We report a study of $\Lambda_c^+\to\Lambda h^+$ and $\Lambda_c^+\to\Sigma^{0} h^+$ ($h\!=\!K,\,\pi$) decays based on a data sample of 980~${\rm fb}^{-1}$ collected with the Belle detector at the KEKB energy-asymmetric $e^+e^-$ collider. The first results of direct $C\!P$ asymmetry in two-body singly Cabibbo-suppressed (SCS) decays of charmed baryons are measured, $A_{C\!P}^{\rm{dir}}(\Lambda_c^+\to\Lambda K^+)\!=\!+0.021\pm0.026\pm0.001$ and $A_{C\!P}^{\rm{dir}}(\Lambda_c^+\to\Sigma^0K^+)\!=\!+0.025\pm0.054\pm0.004$. We also make the most precise measurement of the decay asymmetry parameters ($\alpha$) for the four modes of interest and search for $C\!P$ violation via the $\alpha$-induced $C\!P$ asymmetry ($A_{C\!P}^{\alpha}$). We measure $A_{C\!P}^{\alpha}(\Lambda_c^+\to\Lambda K^+)\!=\!{-0.023\pm0.086\pm0.071}$ and $A_{C\!P}^{\alpha}(\Lambda_c^+\to\Sigma^0K^+)\!=\!{+0.08\pm 0.35\pm 0.14}$, which are the first $A_{C\!P}^{\alpha}$ results for SCS decays of charmed baryons. We search for $\Lambda$-hyperon $C\!P$ violation in $\Lambda_c^+\to(\Lambda,\,\Sigma^0)\pi^+$ and find $A_{C\!P}^{\alpha}(\Lambda\to p\pi^{-})\!=\!{+0.013\pm0.007\pm0.011}$. This is the first time that hyperon $C\!P$ violation has been measured via Cabibbo-favored charm decays. No evidence of baryon $C\!P$ violation is found. We also obtain the most precise branching fractions for two SCS $\Lambda_c^+$ decays, $\mathcal{B}(\Lambda_c^+\to\Lambda K^+)\!=\!(6.57\pm0.17\pm0.11\pm0.35)\times10^{-4}$ and $\mathcal{B}(\Lambda_c^+\to\Sigma^0K^+)\!=\!(3.58\pm0.19\pm0.06\pm0.19)\times10^{-4}$. The first uncertainties are statistical and the second systematic, while the third uncertainties come from the uncertainties on the world average branching fractions of $\Lambda_c^+\to(\Lambda,\,\Sigma^0)\pi^+$.

hep-ex

Observation of $\Omega(2012)^- \to \Xi(1530)\bar{K}$ and measurement of the effective couplings of $\Omega(2012)^-$ to $\Xi(1530)\bar{K}$ and $\Xi\bar{K}$

Using $\Upsilon(1S)$, $\Upsilon(2S)$, and $\Upsilon(3S)$ data collected by the Belle detector, we discover a new three-body decay, $\Omega(2012)^-\to\Xi(1530)\bar K\to\Xi\pi\bar K$, with a significance of 5.2~$\sigma$. The mass of the $\Omega(2012)^-$ is $(2012.5\pm0.7\pm0.5)$ MeV and its effective couplings to $\Xi(1530)\bar{K}$ and $\Xi\bar{K}$ are $(39^{+31}_{-39}\pm9)\times10^{-2}$ and $(1.7\pm0.3\pm0.3)\times10^{-2}$, where the first uncertainties are statistical and the second are systematic. The ratio of the branching fraction for the three-body decay to that for the two-body decay to $\Xi\bar{K}$ is $0.99\pm0.26\pm0.06$, assuming isospin symmetry.

hep-ex

Effect of Native Defects on Optical Properties of InxGa1-xN Alloys

The energy position of the optical absorption edge and the free carrier populations in InxGa1-xN ternary alloys can be controlled using high energy 4He+ irradiation. The blue shift of the absorption edge after irradiation in In-rich material (x > 0.34) is attributed to the band-filling effect (Burstein-Moss shift) due to the native donors introduced by the irradiation. In Ga-rich material, optical absorption measurements show that the irradiation-introduced native defects are inside the bandgap, where they are incorporated as acceptors. The observed irradiation-produced changes in the optical absorption edge and the carrier populations in InxGa1-xN are in excellent agreement with the predictions of the amphoteric defect model.

cond-mat.mtrl-sci

Diluted II-VI Oxide Semiconductors with Multiple Band Gaps

We report the realization of a new multi-band-gap semiconductor. The highly mismatched alloy Zn1-yMnyOxTe1-x has been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn1-yMnyTe host. When only 1.3% of Te atoms is replaced with oxygen in a Zn0.88Mn0.12Te crystal (with band gap of 2.32 eV) the resulting band structure consists of two direct band gaps with interband transitions at ~1.77 eV and 2.7 eV. This remarkable modification of the band structure is well described by the band anticrossing model in which the interactions between the oxygen-derived band and the conduction band are considered. With multiple band gaps that fall within the solar energy spectrum, Zn1-yMnyOxTe1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.

cond-mat.mtrl-sci