arXiv subjects

W. Si

Publications and source records attributed to W. Si.

5 recordsLinked to original sources

arXiv2020

Fermionic Order by Disorder in a van der Waals Antiferromagnet

CeTe3 is a unique platform to investigate the itinerant magnetism in a van der Waals (vdW) coupled metal. Despite chemical pressure being a promising route to boost quantum fluctuation in this system, a systematic study on the chemical pressure effect on Ce3+(4f1) states is absent. Here, we report on the successful growth of a series of Se doped single crystals of CeTe3. We found a fluctuation driven exotic magnetic rotation from the usual easy-axis ordering to an unusual hard-axis ordering. Unlike in localized magnetic systems, near-critical magnetism can increase itinerancy hand-in-hand with enhancing fluctuation of magnetism. Thus, seemingly unstable hard-axis ordering emerges through kinetic energy gain, with the self-consistent observation of enhanced magnetic fluctuation (disorder). As far as we recognize, this order-by-disorder process in fermionic system is observed for the first time within vdW materials. Our finding opens a unique experimental platform for direct visualization of the rich quasiparticle Fermi surface deformation associated with the Fermionic order-by-disorder process. Also, the search for emergent exotic phases by further tuning of quantum fluctuation is suggested as a promising future challenge.

cond-mat.str-el↗

arXiv2005

Synthesis and characterization of Na03RhO206H2O - a semiconductor with a weak ferromagnetic component

We have prepared the oxyhydrate Na03RhO206H2O by extracting Na+ cations from NaRhO2 and intercalating water molecules using an aqueous solution of Na2S2O8. Synchrotron X-ray powder diffraction, thermogravimetric analysis (TGA), and energy-dispersive x-ray analysis (EDX) reveal that a non-stoichiometric Na03(H2O)06 network separates layers of edge-sharing RhO6 octahedra containing Rh3+(4d6, S=0) and Rh4+ (4d5, S=1/2). The resistivities of NaRhO2 and Na03RhO206H2O (T < 300) reveal insulating and semi-conducting behavior with activation gaps of 134 meV and 7.8 meV, respectively. Both Na03RhO206H2O and NaRhO2 show paramagnetism at room temperature, however, the sodium-deficient sample exhibits simultaneously a weak but experimentally reproducible ferromagnetic component. Both samples exhibit a temperature-independent Pauli paramagnetism, for NaRhO2 at T > 50 K and for Na03RhO206H2O at T > 25 K. The relative magnitudes of the temperature-independent magnetic susceptibilities, that of the oxide sample being half that of the oxyhydrate, is consistent with a higher density of thermally accessible electron states at the Fermi level in the hydrated sample. At low temperatures the magnetic moments rise sharply, providing evidence of localized and weakl -ordered electronic spins.

cond-mat.mtrl-sci↗

arXiv2005

Synthesis and Structure of the Monolayer Hydrate K03CoO2 x 04H2O

The monolayer hydrate (MLH) K03CoO2 x 04H2O was synthesized from K06CoO2 by extracting K+ cations using K2S2O8 as an oxidant and the subsequent intercalation of water between the layers of edge-sharing CoO6 octahedra. A hexagonal structure (space group P63/mmc) with lattice parameters a = 2.8262(1) Angstrom, c = 13.8269(6) Angstrom similar to the MLH Na036CoO2 x 07H2O was established using high-resolution synchrotron X-ray powder diffraction data. The K/H2O layer in the K-MLH is disordered, which is in contrast to the Na-MLH. At low temperatures metallic and paramagnetic behavior was found.

cond-mat.mtrl-sci↗

arXiv2002

Charge transfer in the high dielectric constant materials CaCu3Ti4O12 and CdCu3Ti4O12

The cubic perovskite-related ceramic CaCu3Ti4O12 has a very high static dielectric constant ~10000 at room temperature (RT), which drops to about 100 below about 100 K. Substituting Cd for Ca reduces the RT value of the dielectric constant by over an order of magnitude. The large the dielectric constant may be due to an internal barrier layer capacitance (IBLC) effect. Infrared optical properties show a low-frequency mode that increases dramatically in strength at low temperature, suggesting a change in the effective charges and a breakdown of the IBLC model due to a semiconductor-to-insulator transition.

cond-mat.str-el↗

arXiv2002

Epitaxial Thin Films of the Giant-Dielectric-Constant Material CaCu_3Ti_4O_{12} Grown by Pulsed-laser Deposition

Pulsed-laser deposition has been used to grow epitaxial thin films of the giant-dielectric-constant material CaCu_3Ti_4O_{12} on LaAlO_3 and SrTiO_3 substrates with or without various conducting buffer layers. The latter include YBa_2Cu_3O_7, La_{1.85}Sr_{0.15}CuO_{4+δ} and LaNiO_3. Above 100K - 150K the thin films have a temperature independent dielectric constant as do single crystals. The value of the dielectric constant is of the order of 1500 over a wide temperature region, potentially making it a good candidate for many applications. The frequency dependence of its dielectric properties below 100K - 150K indicates an activated relaxation process.

cond-mat.mtrl-sci↗