Searcharxiv⌕ Search

arXiv subjects

W. Tian

Publications and source records attributed to W. Tian.

65 records · Page 4Linked to original sources
arXiv2009

Broadband Dielectric Spectroscopy of Ruddlesden-Popper Sr$_{n+1}$Ti$_{n}$O$_{3n+1}$ ($n$ = 1, 2, 3) Thin Films

We explore the frequency-dependent relative permittivity of Ruddlesden-Popper series Sr(n+1)Ti(n)O(3n+1) (n =1,2,3) thin films as a function of temperature and dc electric field. Interdigitated capacitors and coplanar waveguides were used to extract the frequency response from 500 Hz to 40 GHz. At room temperature, the in-plane relative permittivities obtained for Sr(n+1)Ti(n)O(3n+1) (n =1,2,3) were 42+/-3, 54+/-3, and 77+/-2, respectively, and were independent of frequency. At low temperatures, permittivity increases and electric field tunability develops in Sr(4)Ti(3)O(10).

cond-mat.mtrl-sci↗
arXiv2008

Charge order in LuFe2O4: antiferroelectric ground state and coupling to magnetism

X-ray scattering by multiferroic LuFe2O4 is reported. Below 320 K, superstructure reflections indicate an incommensurate charge order with propagation close to (1/3,1/3,3/2). The corresponding charge configuration, also found by electronic structure calculations as most stable, contains polar Fe/O double-layers with antiferroelectric stacking. Diffuse scattering at 360 K, with (1/3,1/3,0) propagation, indicates ferroelectric short-range correlations between neighboring double-layers. The temperature dependence of the incommensuration indicates that charge order and magnetism are coupled.

cond-mat.str-el↗
arXiv2008

Three Dimensional Magnetic Correlations in Multiferroic LuFe2O4

We present single-crystal neutron diffraction measurements on multiferroic LuFe2O4 showing phase transitions at 240 and 175 K. Magnetic reflections are observed below each transition indicating that the magnetic interactions in LuFe2O4 are 3-dimensional (3D) in character. The magnetic structure is refined as a ferrimagnetic spin configuration below the 240 K transition. While 3D magnetic correlations persists below 175 K, a significant broadening of the magnetic peaks is observed along with the build up of a diffuse component to the magnetic scattering.

cond-mat.str-el↗
arXiv2007

Quantum spin correlations in an organometallic alternating sign chain

High resolution inelastic neutron scattering is used to study excitations in the organometallic magnet DMACuCl$_3$. The correct magnetic Hamiltonian describing this material has been debated for many years. Combined with high field bulk magnetization and susceptibility studies, the new results imply that DMACuCl$_3$ is a realization of the $S=1/2$ alternating antiferromagnetic-ferromagnetic (AFM-FM) chain. Coupled-cluster calculations are used to derive exchange parameters, showing that the AFM and FM interactions have nearly the same strength. Analysis of the scattering intensities shows clear evidence for inter-dimer spin correlations, in contrast to existing results for conventional alternating chains. The results are discussed in the context of recent ideas concerning quantum entanglement.

cond-mat.str-el↗
arXiv2005

Spin-dynamics of the low-dimensional magnet (CH3)2NH2CuCl3

Dimethylammonium copper (II) chloride (also known as DMACuCl3 or MCCL) is a low dimensional S=1/2 quantum spin system proposed to be an alternating ferro-antiferromagnetic chain with similar magnitude ferromagnetic (FM) and antiferromagnetic (AFM) exchange interactions. Subsequently, it was shown that the existing bulk measurements could be adequately modeled by considering DMACuCl3 as independent AFM and FM dimer spin pairs. We present here new inelastic neutron scattering measurements of the spin-excitations in single crystals of DMACuCl3. These results show significant quasi-one-dimensional coupling, however the magnetic excitations do not propagate along the expected direction. We observe a band of excitations with a gap of 0.95 meV and a bandwidth of 0.82 meV.

cond-mat.str-el↗
arXiv2005

Field Dependent Phase Diagram of the Quantum Spin Chain (CH3)2NH2CuCl3

Although (CH3)2NH2CuCl3 (MCCL) was first examined in the 1930's [1], there are open questions regarding the magnetic dimensionality and nature of the magnetic properties. MCCL is proposed to be a S=1/2 alternating ferromagnetic antiferromagnetic spin chain alternating along the crystalline a-axis [2,3]. Proposed ferromagnetic (JFM =1.3 meV) and antiferromagnetic (JAFM =1.1 meV) exchange constants make this system particularly interesting for experimental study. Because JFM and JAFM are nearly identical, the system should show competing behavior between S=1/2 (AFM) and S=1(FM) effects. We report low temperature magnetic field dependent susceptibility, chi(H), and specific heat, Cp, of MCCL. These provide an initial magnetic-field versus temperature phase diagram. A zero-field phase transition consistent with long range magnetic order is observed at T=0.9 K. The transition temperature can be reduced via application of a magnetic field. We also present comparisons to a FM/AFM dimer model that accounts for chi(T,H=0) and Cp(H,T).

cond-mat.str-el↗
arXiv2003

Very high upper critical fields in MgB2 produced by selective tuning of impurity scattering

We report a significant enhancement of the upper critical field $H_{c2}$ of different $MgB_2$ samples alloyed with nonmagnetic impurities. By studying films and bulk polycrystals with different resistivities $ρ$, we show a clear trend of $H_{c2}$ increase as $ρ$ increases. One particular high resistivity film had zero-temperature $H_{c2}(0)$ well above the $H_{c2}$ values of competing non-cuprate superconductors such as $Nb_3Sn$ and Nb-Ti. Our high-field transport measurements give record values $H_{c2}^\perp (0) \approx 34T$ and $H_{c2}\|(0) \approx 49 T$ for high resistivity films and $H_{c2}(0)\approx 29 T$ for untextured bulk polycrystals. The highest $H_{c2}$ film also exhibits a significant upward curvature of $H_{c2}(T)$, and temperature dependence of the anisotropy parameter $γ(T) = H_{c2}\|/ H_{c2}^\perp$ opposite to that of single crystals: $γ(T)$ decreases as the temperature decreases, from $γ(T_c) \approx 2$ to $γ(0) \approx 1.5$. This remarkable $H_{c2}$ enhancement and its anomalous temperature dependence are a consequence of the two-gap superconductivity in $MgB_2$, which offers special opportunities for further $H_{c2}$ increase by tuning of the impurity scattering by selective alloying on Mg and B sites. Our experimental results can be explained by a theory of two-gap superconductivity in the dirty limit. The very high values of $H_{c2}(T)$ observed suggest that $MgB_2$ can be made into a versatile, competitive high-field superconductor.

cond-mat.supr-con↗
arXiv2003

Critical Current Density and Resistivity of MgB2 Films

The high resistivity of many bulk and film samples of MgB2 is most readily explained by the suggestion that only a fraction of the cross-sectional area of the samples is effectively carrying current. Hence the supercurrent (Jc) in such samples will be limited by the same area factor, arising for example from porosity or from insulating oxides present at the grain boundaries. We suggest that a correlation should exist, Jc ~ 1/{Rho(300K) - Rho(50K)}, where Rho(300K) - Rho(50K) is the change in the apparent resistivity from 300 K to 50 K. We report measurements of Rho(T) and Jc for a number of films made by hybrid physical-chemical vapor deposition which demonstrate this correlation, although the "reduced effective area" argument alone is not sufficient. We suggest that this argument can also apply to many polycrystalline bulk and wire samples of MgB2.

cond-mat.supr-con↗
arXiv2002

In situ epitaxial MgB2 thin films for superconducting electronics

A thin film technology compatible with multilayer device fabrication is critical for exploring the potential of the 39-K superconductor magnesium diboride for superconducting electronics. Using a Hybrid Physical-Chemical Vapor Deposition (HPCVD) process, it is shown that the high Mg vapor pressure necessary to keep the MgB$_2$ phase thermodynamically stable can be achieved for the {\it in situ} growth of MgB$_2$ thin films. The films grow epitaxially on (0001) sapphire and (0001) 4H-SiC substrates and show a bulk-like $T_c$ of 39 K, a $J_c$(4.2K) of $1.2 \times 10^7$ A/cm$^2$ in zero field, and a $H_{c2}(0)$ of 29.2 T in parallel magnetic field. The surface is smooth with a root-mean-square roughness of 2.5 nm for MgB$_2$ films on SiC. This deposition method opens tremendous opportunities for superconducting electronics using MgB$_2$.

cond-mat.mtrl-sci↗
arXiv2001

Superconducting properties of nanocrystalline MgB$_2$ thin films made by an in situ annealing process

We have studied the structural and superconducting properties of MgB$_2$ thin films made by pulsed laser deposition followed by in situ annealing. The cross-sectional transmission electron microscopy reveals a nanocrystalline mixture of textured MgO and MgB$_2$ with very small grain sizes. A zero-resistance transition temperature ($T_{c0}$) of 34 K and a zero-field critical current density ($J_c$) of $1.3 \times 10^6$ A/cm$^2$ were obtained. The irreversibility field was $\sim$ 8 T at low temperatures, although severe pinning instability was observed. These bulk-like superconducting properties show that the in situ deposition process can be a viable candidate for MgB$_2$ Josephson junction technologies.

cond-mat.mtrl-sci↗