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W. Wegscheider

Publications and source records attributed to W. Wegscheider.

At least 91 records · Page 5Linked to original sources

Hybrid Quantum Dot-2D Electron Gas Devices for Coherent Optoelectronics

We present an inverted GaAs 2D electron gas with self-assembled InAs quantum dots in close proximity, with the goal of combining quantum transport with quantum optics experiments. We have grown and characterized several wafers -- using transport, AFM and optics -- finding narrow-linewidth optical dots and high-mobility, single subband 2D gases. Despite being buried 500 nm below the surface, the dots are clearly visible on AFM scans, allowing precise localization and paving the way towards a hybrid quantum system integrating optical dots with surface gate-defined nanostructures in the 2D gas.

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Towards combined transport and optical studies of the 0.7-anomaly in a quantum point contact

A Quantum Point Contact (QPC) causes a one-dimensional constriction on the spatial potential landscape of a two-dimensional electron system. By tuning the voltage applied on a QPC at low temperatures the resulting regular step-like electron conductance quantization can show an additional kink near pinch-off around 0.7(2$e^2$/h), called 0.7-anomaly. In a recent publication, we presented a combination of theoretical calculations and transport measurements that lead to a detailed understanding of the microscopic origin of the 0.7-anomaly. Functional Renormalization Group-based calculations were performed exhibiting the 0.7-anomaly even when no symmetry-breaking external magnetic fields are involved. According to the calculations the electron spin susceptibility is enhanced within a QPC that is tuned in the region of the 0.7-anomaly. Moderate externally applied magnetic fields impose a corresponding enhancement in the spin magnetization. In principle, it should be possible to map out this spin distribution optically by means of the Faraday rotation technique. Here we report the initial steps of an experimental project aimed at realizing such measurements. Simulations were performed on a particularly pre-designed semiconductor heterostructure. Based on the simulation results a sample was built and its basic transport and optical properties were investigated. Finally, we introduce a sample gate design, suitable for combined transport and optical studies.

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Interplay of fractional quantum Hall states and localization in quantum point contacts

We investigate integer and fractional quantum Hall states in quantum point contacts (QPCs) of different geometries, defined in AlGaAs/GaAs heterostructures employing different doping and screening techniques. We find that, even in the highest mobility samples, interference and localization strongly influence the transport properties. We propose microscopic models for these effects, based on single- and many-electron physics. For integer quantum Hall states, transport is modulated due to the self-consistent formation of compressible regions of enhanced or reduced density in the incompressible region of the constriction. In the fractional quantum Hall regime, we observe the localization of fractionally charged quasi-particles in the constriction and an interplay of single- and many-electron physics. At low electron densities and in comparatively weak magnetic fields, single-electron interference dominates transport. Utilizing optimized growth and gating techniques, the $ν$=5/2 state can be observed in a QPC, conserving the bulk properties in an unprecedented quality. Our results might improve the understanding of the influence of localization on the transmission properties of QPCs, which is necessary for the interpretation of interference experiments employing QPCs, especially at $ν$=5/2.

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Locally induced quantum interference in scanning gate experiments

We present conductance measurements of a ballistic circular stadium influenced by a scanning gate. When the tip depletes the electron gas below, we observe very pronounced and regular fringes covering the entire stadium. The fringes correspond to transmitted modes in constrictions formed between the tip-induced potential and the boundaries of the stadium. Moving the tip and counting the fringes gives us exquisite control over the transmission of these constrictions. We use this control to form a quantum ring with a specific number of modes in each arm showing the Aharonov-Bohm effect in low-field magnetoconductance measurements.

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Dynamics of spin-flip photon-assisted tunneling

We present time-resolved measurements of spin-flip photon-assisted tunneling and spin-flip relaxation in a doubly occupied double quantum dot. The photon-assisted excitation rate as a function of magnetic field indicates that spin-orbit coupling is the dominant mechanism behind the spin-flip under the present conditions. We are able to extract the resulting effective `spin-flip tunneling' energy, which is found to be three orders of magnitude smaller than the regular spin-conserving tunneling energy. We also measure the relaxation and dephasing times of a qubit formed out of two two-electron states with different spin and charge configurations.

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Dynamics of a localized spin excitation close to the spin-helix regime

The time evolution of a local spin excitation in a (001)-confined two-dimensional electron gas subjected to Rashba and Dresselhaus spin-orbit interactions of similar strength is investigated theoretically and compared with experimental data. Specifically, the consequences of the finite spatial extension of the initial spin polarization is studied for non-balanced Rashba and Dresselhaus terms and for finite cubic Dresselhaus spin-orbit interaction. We show that the initial out-of-plane spin polarization evolves into a helical spin pattern with a wave number that gradually approaches the value $q_0$ of the persistent spin helix mode. In addition to an exponential decay of the spin polarization that is proportional to both the spin-orbit imbalance and the cubic Dresselhaus term, the finite width $w$ of the spin excitation reduces the spin polarization by a factor that approaches $\exp(-q_0^2 w^2/2)$ at longer times.

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Spin polarization, dephasing and photoinduced spin diffusion in (110)-grown two-dimensional electron systems

We study the optically induced spin polarization, spin dephasing and diffusion in several high-mobility two-dimensional electron systems, which are embedded in GaAs quantum wells grown on (110)-oriented substrates. The experimental techniques comprise a two-beam magneto-optical spectroscopy system and polarization-resolved photoluminescence. Under weak excitation conditions at liquid-helium temperatures, we observe spin lifetimes above 100 ns in one of our samples, which are reduced with increasing excitation density due to additional, hole-mediated, spin dephasing. The spin dynamic is strongly influenced by the carrier density and the ionization of remote donors, which can be controlled by temperature and above-barrier illumination. The absolute value of the average electron spin polarization in the samples is directly observable in the circular polarization of photoluminescence collected under circularly polarized excitation and reaches values of about 5 percent. Spin diffusion is studied by varying the distance between pump and probe beams in micro-spectroscopy experiments. We observe diffusion lengths above 100 $μ$m and, at high excitation intensity, a nonmonotonic dependence of the spin polarization on the pump-probe distance.

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Characterization of Qubit Dephasing by Landau-Zener Interferometry

Controlling coherent interaction at avoided crossings is at the heart of quantum information processing. The regime between sudden switches and adiabatic transitions is characterized by quantum superpositions that enable interference experiments. Here, we implement periodic passages at intermediate speed in a GaAs-based two-electron charge qubit and observe Landau-Zener-Stückelberg-Majorana (LZSM) quantum interference of the resulting superposition state. We demonstrate that LZSM interferometry is a viable and very general tool to not only study qubit properties but beyond to decipher decoherence caused by complex environmental influences. Our scheme is based on straightforward steady state experiments. The coherence time of our two-electron charge qubit is limited by electron-phonon interaction. It is much longer than previously reported for similar structures.

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Spin dynamics in p-doped semiconductor nanostructures subject to a magnetic field tilted from the Voigt geometry

We develop a theoretical description of the spin dynamics of resident holes in a p-doped semiconductor quantum well (QW) subject to a magnetic field tilted from the Voigt geometry. We find the expressions for the signals measured in time-resolved Faraday rotation (TRFR) and resonant spin amplification (RSA) experiments and study their behavior for a range of system parameters. We find that an inversion of the RSA peaks can occur for long hole spin dephasing times and tilted magnetic fields. We verify the validity of our theoretical findings by performing a series of TRFR and RSA experiments on a p-modulation doped GaAs/Al_{0.3}Ga_{0.7}As single QW and showing that our model can reproduce experimentally observed signals.

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Resolving Spin-Orbit and Hyperfine Mediated Electric Dipole Spin Resonance in a Quantum Dot

We investigate the electric manipulation of a single electron spin in a single gate-defined quantum dot. We observe that so-far neglected differences between the hyperfine and spin-orbit mediated electric dipole spin resonance conditions have important consequences at high magnetic fields. In experiments using adiabatic rapid passage to invert the electron spin, we observe an unusually wide and asymmetric response as a function of magnetic field. Simulations support the interpretation of the lineshape in terms of four different resonance conditions. These findings may lead to isotope-selective control of dynamic nuclear polarization in quantum dots.

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Anomalous resistance overshoot in the integer quantum Hall effect

In this work we report experiments on defined by shallow etching narrow Hall bars. The magneto-transport properties of intermediate mobility two-dimensional electron systems are investigated and analyzed within the screening theory of the integer quantized Hall effect. We observe a non-monotonic increase of Hall resistance at the low magnetic field ends of the quantized plateaus, known as the overshoot effect. Unexpectedly, for Hall bars that are defined by shallow chemical etching the overshoot effect becomes more pronounced at elevated temperatures. We observe the overshoot effect at odd and even integer plateaus, which favor a spin independent explanation, in contrast to discussion in the literature. In a second set of the experiments, we investigate the overshoot effect in gate defined Hall bar and explicitly show that the amplitude of the overshoot effect can be directly controlled by gate voltages. We offer a comprehensive explanation based on scattering between evanescent incompressible channels.

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Imaging magnetoelectric subbands in ballistic constrictions

We perform scanning gate experiments on ballistic constrictions in the presence of small perpendicular magnetic fields. The constrictions form the entrance and exit of a circular gate-defined ballistic stadium. Close to constrictions we observe sets of regular fringes creating a checker board pattern. Inside the stadium conductance fluctuations governed by chaotic dynamics of electrons are visible. The checker board pattern allows us to determine the number of transmitted modes in the constrictions forming between the tip-induced potential and gate-defined geometry. Spatial investigation of the fringe pattern in a perpendicular magnetic field shows a transition from electrostatic to magnetic depopulation of magnetoelectric subbands. Classical and quantum simulations agree well with different aspects of our observations.

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Interference of electrons in backscattering through a quantum point contact

Scanning gate microscopy is used to locally investigate electron transport in a high-mobility two-dimensional electron gas formed in a GaAs/AlGaAs heterostructure. Using quantum point contacts (QPC) we observe branches caused by electron backscattering decorated with interference fringes similar to previous observations by Topinka et al. We investigate the branches at different points of a conductance plateau as well as between plateaus, and demonstrate that the most dramatic changes in branch pattern occur at the low-energy side of the conductance plateaus. The branches disappear at magnetic fields as low as 50 mT demonstrating the importance of backscattering for the observation of the branching effect. The spacing between the interference fringes varies by more than 50% for different branches across scales of microns. Several scenarios are discussed to explain this observation.

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Quantum interference and phonon-mediated back-action in lateral quantum dot circuits

Spin qubits have been successfully realized in electrostatically defined, lateral few-electron quantum dot circuits. Qubit readout typically involves spin to charge information conversion, followed by a charge measurement made using a nearby biased quantum point contact. It is critical to understand the back-action disturbances resulting from such a measurement approach. Previous studies have indicated that quantum point contact detectors emit phonons which are then absorbed by nearby qubits. We report here the observation of a pronounced back-action effect in multiple dot circuits where the absorption of detector-generated phonons is strongly modified by a quantum interference effect, and show that the phenomenon is well described by a theory incorporating both the quantum point contact and coherent phonon absorption. Our combined experimental and theoretical results suggest strategies to suppress back-action during the qubit readout procedure.

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Effect of rotation of the polarization of linearly polarized microwaves on the radiation-induced magnetoresistance oscillations

Light-matter coupling is investigated by rotating, by an angle θ, the polarization of linearly polarized microwaves with respect to the long-axis of GaAs/AlGaAs Hall-bar electron devices. At low microwave power, P, experiments show a strong sinusoidal variation in the diagonal resistance R_{xx} vs. θat the oscillatory extrema, indicating a linear polarization sensitivity in the microwave radiation-induced magnetoresistance oscillations. Surprisingly, the phase shift θ_{0} for maximal oscillatory R_{xx} response under photoexcitation appears dependent upon the radiation-frequency f, the extremum in question, and the magnetic field orientation or sgn(B).

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Observation of linear-polarization-sensitivity in the microwave-radiation-induced magnetoresistance oscillations

In the quasi two-dimensional GaAs/AlGaAs system, we investigate the effect of rotating \textit{in-situ} the electric field of linearly polarized microwaves relative to the current, on the microwave-radiation-induced magneto-resistance oscillations. We find that the frequency and the phase of the photo-excited magneto-resistance oscillations are insensitive to the polarization. On the other hand, the amplitudes of the magnetoresistance oscillations are remarkably responsive to the relative orientation between the microwave antenna and the current-axis in the specimen. The results suggest a striking linear-polarization-sensitivity in the radiation-induced magnetoresistance oscillations.

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Direct mapping of the formation of a persistent spin helix: Supplementary information

The spin-orbit interaction (SOI) in zincblende semiconductor quantum wells can be set to a symmetry point, in which spin decay is strongly suppressed for a helical spin mode. Signatures of such a persistent spin helix (PSH) have been probed using the transient spin grating technique, but it has not yet been possible to observe the formation and the helical nature of a PSH. Here we directly map the diffusive evolution of a local spin excitation into a helical spin mode by a time- and spatially resolved magneto-optical Kerr rotation technique. Depending on its in-plane direction, an external magnetic field interacts differently with the spin mode and either highlights its helical nature or destroys the SU(2) symmetry of the SOI and thus decreases the spin lifetime. All relevant SOI parameters are experimentally determined and confirmed with a numerical simulation of spin diffusion in the presence of SOI.

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Gate voltage control over spin relaxation length

Spin currents in channels of a high mobility GaAs/AlGaAs two-dimensional electron gas are generated and detected using spin-polarized quantum point contacts. We have recently shown that the relaxation length of spin currents is resonantly suppressed when the frequency at which electrons bounce between channel walls matches the Larmor frequency. Here we demonstrate that a gate on top of the channel tunes such ballistic spin resonance by tuning the velocity of electrons and hence the bouncing frequency. These findings demonstrate a new mechanism for electrical control of spin logic circuits.

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