arXiv subjects

W. Wegscheider

Publications and source records attributed to W. Wegscheider.

At least 163 records · Page 9Linked to original sources

arXiv2008

Edge Channel Interference Controlled by Landau Level Filling

We study the visibility of Aharonov-Bohm interference in an electronic Mach-Zehnder interferometer (MZI) in the integer quantum Hall regime. The visibility is controlled by the filling factor $ν$ and is observed only between $ν\approx 2.0$ and 1.0, with an unexpected maximum near $ν=1.5$. Three energy scales extracted from the temperature and voltage dependences of the visibility change in a very similar way with the filling factor, indicating that the different aspects of the interference depend sensitively on the local structure of the compressible and incompressible strips forming the quantum Hall edge channels.

cond-mat.mtrl-sci↗

arXiv2008

Morphology and flexibility of graphene and few-layer graphene on various substrates

We report on detailed microscopy studies of graphene and few-layer-graphene produced by mechanical exfoliation on various semi-conducting substrates. We demonstrate the possibility to prepare and analyze graphene on (001)-GaAs, manganese p-doped (001)-GaAs and InGaAs substrates. The morphology of graphene on these substrates was investigated by scanning electron and atomic force microscopy and compared to layers on silicon oxide. It was found that graphene sheets strongly follow the texture of the sustaining substrates independent on doping, polarity or roughness. Furthermore resist residues exist on top of graphene after a lithographic step. The obtained results provide the opportunity to research the graphene-substrate interactions.

cond-mat.mtrl-sci↗

arXiv2008

Metal-insulator transition and giant anisotropic magnetoresistance in ultra thin (Ga,Mn)As

MBE-grown, 5 nm-thick annealed Ga0.95Mn0.05As films with Tc~90K demonstrate transition from metallic to insulating state below To~10K, where sheet resistances Rsh~h/e2 and both longitudinal Rxx and transverse Rxy components become comparable. Below metal-insulator transition we found giant anisotropic magnetoresistance (GAMR), which depends on orientation of magnetization to crystallographic axes and manifests itself in positive magnetoresistance near 50% for Rxx at T=1.7K, H//[110] crystallographic direction and parallel to current in contrast to smaller and negative magnetoresistance for H// direction. We connect GAMR with anisotropic spin-orbit interaction resulting in formation of high- and low- resistance states with different localization along non-equivalent easy axes.

cond-mat.mtrl-sci↗

arXiv2008

Dynamic photoconductive gain effect in shallow-etched AlGaAs/GaAs quantum wires

We report on a dynamic photoconductive gain effect in quantum wires which are lithographically fabricated in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well which shift the chemical potential of the quantum wire. The non-linear current-voltage characteristics of the quantum wires also allow detecting the photoresponse effect of excess charge carriers in the conduction band of the quantum well. The dynamics of the photoconductive gain are limited by the recombination time of both electrons and holes.

cond-mat.mes-hall↗

arXiv2008

Broadband electrical detection of spin excitations in (Ga,Mn)As using a photovoltage technique

We report on microwave photovoltage and simultaneous magnetotransport measurements in a (Ga,Mn)As film oriented normal to the magnetic field. We detect the ferromagnetic resonance over a broad frequency range of 2 GHz to 18.5 GHz and determine the spectroscopic g-factor and separate the Gilbert from the inhomogeneous contribution to magnetization relaxation. Temperature dependent measurements below the saturation magnetization indicate that the photovoltage signal can serve as a sensitive tool to study the crystal anisotropy. We demonstrate that the combination of spin dynamics with charge transport is a promising tool to study microstructured ferromagnetic semiconductor samples.

cond-mat.mtrl-sci↗

arXiv2008

Optically induced transport properties of freely suspended semiconductor submicron channels

We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodoping effect. The hereby enhanced electronic conductance exhibits a time constant in the range of one to ten milliseconds.

cond-mat.mes-hall↗

arXiv2008

Nonequilibrium phenomena in adjacent electrically isolated nanostructures

We report on nonequilibrium interaction phenomena between adjacent but electrostatically separated nanostructures in GaAs. A current flowing in one externally biased nanostructure causes an excitation of electrons in a circuit of a second nanostructure. As a result we observe a dc current generated in the unbiased second nanostructure. The results can be qualitatively explained in terms of acoustic phonon based energy transfer between the two mutually isolated circuits.

cond-mat.mes-hall↗

arXiv2008

All-electric detectors of the polarization state of terahertz laser radiation (extended version)

Two types of room temperature detectors of terahertz laser radiation have been developed which allow in an all-electric manner to determine the plane of polarization of linearly polarized radiation and the ellipticity of elliptically polarized radiation, respectively. The operation of the detectors is based on photogalvanic effects in semiconductor quantum well structures of low symmetry. The photogalvanic effects have sub-nanosecond time constants at room temperature making a high time resolution of the polarization detectors possible.

cond-mat.mes-hall↗

arXiv2008

The Cyclotron Spin-Flip Mode as the Lowest-Energy Excitation of Unpolarized Integer Quantum Hall States

The cyclotron spin-flip modes of spin unpolarized integer quantum Hall states ($ν=2,4$) have been studied with inelastic light scattering. The energy of these modes is significantly smaller compared to the bare cyclotron gap. Second order exchange corrections are held responsible for a negative energy contribution and render these modes the lowest energy excitations of unpolarized integer quantum Hall states.

cond-mat.mes-hall↗

arXiv2008

Subnanosecond Ellipticity Detector for Laser Radiation (second version, extended)

Two types of room temperature detectors of terahertz laser radiation have been developed which allow in an all-electric manner to determine the plane of polarization of linearly polarized radiation and the Stokes parameters of elliptically polarized radiation, respectively. The operation of the detectors is based on photogalvanic effects in semiconductor quantum well structures of low symmetry. The photogalvanic effects have nanoseconds time constants at room temperature making a high time resolution of the polarization detectors possible.

cond-mat.mtrl-sci↗

arXiv2008

Phase coherent transport in (Ga,Mn)As

Quantum interference effects and resulting quantum corrections of the conductivity have been intensively studied in disordered conductors over the last decades. The knowledge of phase coherence lengths and underlying dephasing mechanisms are crucial to understand quantum corrections to the resistivity in the different material systems. Due to the internal magnetic field and the associated breaking of time-reversal symmetry quantum interference effects in ferromagnetic materials have been scarcely explored. Below we describe the investigation of phase coherent transport phenomena in the newly discovered ferromagnetic semiconductor (Ga,Mn)As. We explore universal conductance fluctuations in mesoscopic (Ga,Mn)As wires and rings, the Aharonov-Bohm effect in nanoscale rings and weak localization in arrays of wires, made of the ferromagnetic semiconductor material. The experiments allow to probe the phase coherence length L_phi and the spin flip length L_SO as well as the temperature dependence of dephasing.

cond-mat.mes-hall↗

arXiv2007

Symmetry and spin dephasing in (110)-grown quantum wells

Symmetry and spin dephasing of in (110)-grown GaAs quantum wells (QWs) are investigated applying magnetic field induced photogalvanic effect (MPGE) and time-resolved Kerr rotation. We show that MPGE provides a tool to probe the symmetry of (110)-grown quantum wells. The photocurrent is only observed for asymmetric structures but vanishes for symmetric QWs. Applying Kerr rotation we prove that in the latter case the spin relaxation time is maximal, therefore these structures set upper limit of spin dephasing in GaAs QWs. We also demonstrate that structure inversion asymmetry can be controllably tuned to zero by variation of delta-doping layer position.

cond-mat.mes-hall↗

arXiv2007

Exciton condensate at a total filling factor of 1 in Corbino 2D electron bilayers

Magneto-transport and drag measurements on a quasi-Corbino 2D electron bilayer at the systems total filling factor 1 (v_tot=1) reveal a drag voltage that is equal in magnitude to the drive voltage as soon as the two layers begin to form the expected v_tot=1 exciton condensate. The identity of both voltages remains present even at elevated temperatures of 0.25 K. The conductance in the current carrying layer vanishes only in the limit of strong coupling between the two layers and at T->0 K which suggests the presence of an excitonic circular current.

cond-mat.mes-hall↗

arXiv2007

Manifestation of a complex edge excitation structure in the fractional quantum Hall regime at high filling factors

We experimentally study equilibration across the sample edge at high fractional filling factors 4/3, 5/3 under experimental conditions, which allow us to obtain high imbalance conditions. We find a lack of the full equilibration across the edge even in the flat-band situation, where no potential barrier survives at the sample edge. We interpret this result as the manifestation of complicated edge excitation structure at high fractional filling factors 4/3, 5/3. Also, a mobility gap in the $ν_c=1$ incompressible strip is determined in normal and tilted magnetic fields.

cond-mat.mes-hall↗

arXiv2007

Dependence of spin dephasing on initial spin polarization in a high-mobility two-dimensional electron system

We have studied the spin dynamics of a high-mobility two-dimensional electron system in a GaAs/Al_{0.3}Ga_{0.7}As single quantum well by time-resolved Faraday rotation and time-resolved Kerr rotation in dependence on the initial degree of spin polarization, P, of the electrons. By increasing the initial spin polarization from the low-P regime to a significant P of several percent, we find that the spin dephasing time, $T_2^\ast$, increases from about 20 ps to 200 ps; Moreover, $T_2^\ast$ increases with temperature at small spin polarization but decreases with temperature at large spin polarization. All these features are in good agreement with theoretical predictions by Weng and Wu [Phys. Rev. B {\bf 68}, 075312 (2003)]. Measurements as a function of spin polarization at fixed electron density are performed to further confirm the theory. A fully microscopic calculation is performed by setting up and numerically solving the kinetic spin Bloch equations, including the D'yakonov-Perel' and the Bir-Aronov-Pikus mechanisms, with {\em all} the scattering explicitly included. We reproduce all principal features of the experiments, i.e., a dramatic decrease of spin dephasing with increasing $P$ and the temperature dependences at different spin polarizations.

cond-mat.mtrl-sci↗

arXiv2007

Investigations on unconventional aspects in the quantum Hall regime of narrow gate defined channels

We report on theoretical and experimental investigations of the integer quantized Hall effect in narrow channels at various mobilities. The Hall bars are defined electrostatically in two-dimensional electron systems by biasing metal gates on the surfaces of GaAs/AlGaAs heterostructures. In the low mobility regime the classical Hall resistance line is proportional to the magnetic field as measured in the high temperature limit and cuts through the center of each Hall plateau. For high mobility samples we observe in linear response measurements, that this symmetry is broken and the classical Hall line cuts the plateaus not at the center but at higher magnetic fields near the edges of the plateaus. These experimental results confirm the unconventional predictions of a model for the quantum Hall effect taking into account mutual screening of charge carriers within the Hall bar. The theory is based on solving the Poisson and Schrödinger equations in a self-consistent manner.

cond-mat.mes-hall↗

arXiv2007

Counterflow of electrons in two isolated quantum point contacts

We study the interaction between two adjacent but electrically isolated quantum point contacts (QPCs). At high enough source-drain bias on one QPC, the drive QPC, we detect a finite electric current in the second, unbiased, detector QPC. The current generated at the detector QPC always flows in the opposite direction than the current of the drive QPC. The generated current is maximal, if the detector QPC is tuned to a transition region between its quantized conductance plateaus and the drive QPC is almost pinched-off. We interpret this counterflow phenomenon in terms of an asymmetric phonon-induced excitation of electrons in the leads of the detector QPC.

cond-mat.mes-hall↗

arXiv2007

A cryogenic amplifier for fast real-time detection of single-electron tunneling

We employ a cryogenic High Electron Mobility Transistor (HEMT) amplifier to increase the bandwidth of a charge detection setup with a quantum point contact (QPC) charge sensor. The HEMT is operating at 1K and the circuit has a bandwidth of 1 MHz. The noise contribution of the HEMT at high frequencies is only a few times higher than that of the QPC shot noise. We use this setup to monitor single-electron tunneling to and from an adjacent quantum dot and we measure fluctuations in the dot occupation as short as 400 nanoseconds, 20 times faster than in previous work.

cond-mat.mes-hall↗