arXiv subjects

Wanghao Tian

Publications and source records attributed to Wanghao Tian.

6 recordsLinked to original sources

arXiv2026

Twist-angle evolution from valley-polarized fractional topological phases to valley-degenerate superconductivity in twisted bilayer MoTe2

Moiré superlattices formed by semiconducting transition metal dichalcogenides (TMDs) provide a highly tunable platform for investigating strongly correlated and topological quantum phases. As a prototypical example, twisted bilayer MoTe2 (tMoTe2) has been shown to host fractional topological phases, such as zero-field fractional Chern insulators (FCIs) exhibiting fractional quantum anomalous Hall (FQAH) effects. However, how these correlated topological phases evolve with twist angle and compete with other quantum phases in tMoTe2 remains largely unexplored. Here we report a systematic transport study of twist-angle-dependent phase diagrams in tMoTe2 across a range of 3.8°-5.78°, revealing an evolution from fractionalized states of matter with spontaneous valley polarization to valley-degenerate superconductivity. At relatively small twist angles, partially-filled Chern bands of tMoTe2 host FQAH states following the Jain sequence, together with signatures of an anomalous composite Fermi liquid at moiré hole filling factor νh = 1/2. Increasing twist angle progressively suppresses fractional topological phases and reconstructs the half-filled Chern band into symmetry-breaking integer Chern insulating states. At νh = 1, we observe a transition from robust integer quantum anomalous Hall (IQAH) insulators at small angles to displacement-field-tuned, topologically trivial correlated insulators at larger angles. Remarkably, at a twist angle of 5.78°, superconductivity emerges adjacent to the correlated insulating phase, with a phase diagram closely resembling that recently reported in twisted bilayer WSe2 (tWSe2). Our results uncover a unified twist-angle-driven phase evolution linking fractional topology, symmetry breaking, magnetic order, and superconductivity, providing new insight into the emergent quantum phenomena in moiré systems.

cond-mat.mes-hall↗

arXiv2026

Emergence of a symmetry-broken Chern insulator near a moiré Kondo breakdown

Moiré semiconductors built on angle-aligned transition metal dichalcogenide (TMD) heterobilayers provide a physical realization of the Kondo lattice model, in which one TMD layer is prepared in a Mott insulating state supporting a lattice of local magnetic moments and the other layer in a metallic state supporting itinerant carriers. The artificial Kondo lattice enables the exploration of exotic states of matter near a continuously tunable Kondo breakdown. Here we report the emergence of a symmetry-broken Chern insulator at a moiré hole filling factor 4/3 in angle-aligned MoTe2/WSe2 moiré bilayers, which realize a chiral Kondo lattice. The symmetry-broken Chern insulator, which exhibits integer quantized Hall conductance at a fractional moiré filling, breaks the translational symmetry of the lattice spontaneously; it also appears only near a magnetic field-induced Kondo breakdown in the mixed-valence regime of the material. We further demonstrate that the magnetic field required to induce the Kondo breakdown and to stabilize the symmetry-broken Chern insulator is twist angle dependent. The results present new opportunities for exploring the subtle interplay between topology and Kondo interactions in moiré semiconductors.

cond-mat.mes-hall↗

arXiv2026

Electric-field-tuned consecutive topological phase transitions between distinct correlated insulators in moire MoTe2/WSe2 heterobilayer

Consecutive topological phase transitions (TPTs) between strongly correlated electronic phases that differ simultaneously in symmetry breaking and topological order are of fundamental interest in condensed matter physics, yet are rarely realized experimentally. We report two consecutive electric-field-driven TPTs at half filling (nu = 1) in angle-aligned MoTe2/WSe2 moire heterobilayers. With increasing out-of-plane displacement field, a geometrically frustrated Mott insulator evolves into a ferromagnetic quantum anomalous Hall (QAH) Mott insulator, i.e., a spin-polarized topological Mott insulator without an observable charge-gap closure, and subsequently into an antiferromagnetic, valley-coherent Mott insulator (VC-AFM) accompanied by a continuous charge-gap collapse and the emergence of a critical metallic state. Layer-resolved magnetic circular dichroism (MCD), magneto-transport, and compressibility measurements jointly determine the phase diagram. The high-field evolution of the antiferromagnetic state reveals a metamagnetic-like transition at a critical field B*, above which a Chern insulating transport response reappears. Our results establish the MoTe2/WSe2 moire platform as a tunable realization of an extended Kane-Mele-Hubbard model hosting sequential correlation-topology-intertwined transitions.

cond-mat.str-el↗

arXiv2024

Electrical Control Grain Dimensionality with Multilevel Magnetic Anisotropy

In alignment with the increasing demand for larger storage capacity and longer data retention, electrical control of magnetic anisotropy has been a research focus in the realm of spintronics. Typically, magnetic anisotropy is determined by grain dimensionality, which is set during the fabrication of magnetic thin films. Despite the intrinsic correlation between magnetic anisotropy and grain dimensionality, there is a lack of experimental evidence for electrically controlling grain dimensionality, thereby impeding the efficiency of magnetic anisotropy modulation. Here, we demonstrate an electric field control of grain dimensionality and prove it as the active mechanism for tuning interfacial magnetism. The reduction in grain dimensionality is associated with a transition from ferromagnetic to superparamagnetic behavior. We achieve a non-volatile and reversible modulation of the coercivity in both the ferromagnetic and superparamagnetic regimes. Subsequent electrical and elemental analysis confirms the variation in grain dimensionality upon the application of gate voltages, revealing a transition from a multidomain to a single-domain state accompanied by a reduction in grain dimensionality. Furthermore, we exploit the influence of grain dimensionality on domain wall motion, extending its applicability to multilevel magnetic memory and synaptic devices. Our results provide a strategy for tuning interfacial magnetism through grain size engineering for advancements in high-performance spintronics.

cond-mat.mtrl-sci↗

arXiv2024

Field-free superconducting diode effect and magnetochiral anisotropy in FeTe0.7Se0.3 junctions with the inherent asymmetric barrier

Nonreciprocal electrical transport, characterized by an asymmetric relationship between current and voltage, plays a crucial role in modern electronic industries. Recent studies have extended this phenomenon to superconductors, introducing the concept of the superconducting diode effect (SDE). The SDE is characterized by unequal critical supercurrents along opposite directions. Due to the requirement on broken inversion symmetry, the SDE is commonly accompanied by electrical magnetochiral anisotropy (eMCA) in the resistive state. Achieving a magnetic field-free SDE with field tunability is pivotal for advancements in superconductor devices. Conventionally, the field-free SDE has been achieved in Josephson junctions by intentionally intercalating an asymmetric barrier layer. Alternatively, internal magnetism was employed. Both approaches pose challenges in the selection of superconductors and fabrication processes, thereby impeding the development of SDE. Here, we present a field-free SDE in FeTe0.7Se0.3 (FTS) junction with eMCA, a phenomenon absent in FTS single nanosheets. The field-free property is associated with the presence of a gradient oxide layer on the upper surface of each FTS nanosheet, while the eMCA is linked to spin-splitting arising from the absence of inversion symmetry. Both the SDE and eMCA respond to magnetic fields with distinct temperature dependencies. This work presents a versatile and straightforward strategy for advancing superconducting electronics.

cond-mat.supr-con↗

arXiv2024

Giant third-order nonlinear Hall effect in misfit layer compound (SnS)${1.17}$(NbS$_2$)$_3$

Nonlinear Hall effect (NLHE) holds immense significance in recognizing the band geometry and its potential applications in current rectification. Recent discoveries have expanded the study from second-order to third-order nonlinear Hall effect (THE), which is governed by an intrinsic band geometric quantity called the Berry Connection Polarizability (BCP) tensor. Here we demonstrate a giant THE in a misfit layer compound, (SnS)${1.17}$(NbS$_2$)$_3$. While the THE is prohibited in individual NbS$_2$ and SnS due to the constraints imposed by the crystal symmetry and their band structures, a remarkable THE emerges when a superlattice is formed by introducing a monolayer of SnS. The angular-dependent THE and its scaling relationship indicate that the phenomenon could be correlated to the band geometry modulation, concurrently with the symmetry breaking. The resulting strength of THE is orders of magnitude higher compared to recent studies. Our work illuminates the modulation of structural and electronic geometries for novel quantum phenomena through interface engineering.

cond-mat.mes-hall↗