arXiv subjects

Wanjun Wang

Publications and source records attributed to Wanjun Wang.

3 recordsLinked to original sources

arXiv2023

Crown ether decorated silicon photonics for safeguarding against lead poisoning

Lead (Pb2+) toxification in society is one of the most concerning public health crisis that remains unaddressed. The exposure to Pb2+ poisoning leads to a multitude of enduring health issues, even at the part-per-billion scale (ppb). Yet, public action dwarfs its impact. Pb2+ poisoning is estimated to account for 1 million deaths per year globally, which is in addition to its chronic impact on children. With their ring-shaped cavities, crown ethers are uniquely capable of selectively binding to specific ions. In this work, for the first time, the synergistic integration of highly-scalable silicon photonics, with crown ether amine conjugation via Fischer esterification in an environmentally-friendly fashion is demonstrated. This realises a photonic platform that enables the in-situ, highly-selective and quantitative detection of various ions. The development dispels the existing notion that Fischer esterification is restricted to organic compounds, laying the ground for subsequent amine conjugation for various crown ethers. In this work, the platform is engineered for Pb2+ detection, demonstrating a large dynamic detection range of 1 - 262000 ppb with high selectivity against a wide range of relevant ions. These results indicate the potential for the pervasive implementation of the technology to safeguard against ubiquitous lead poisoning in our society.

physics.optics↗

arXiv2023

High-speed 4 ${\times}$ 4 silicon photonic electro-optic switch, operating at the 2 {\mu}m waveband

The escalating need for expansive data bandwidth, and the resulting capacity constraints of the single mode fiber (SMF) have positioned the 2-${\mu}$m waveband as a prospective window for emerging applications in optical communication. This has initiated an ecosystem of silicon photonic components in the region driven by CMOS compatibility, low cost, high efficiency and potential for large-scale integration. In this study, we demonstrate a plasma dispersive, 4 ${\times}$ 4 electro-optic switch operating at the 2-${\mu}$m waveband with the shortest switching times. The demonstrated switch operates across a 45-nm bandwidth, with 10-90% rise and 90-10% fall time of 1.78 ns and 3.02 ns respectively. In a 4 ${\times}$ 4 implementation, crosstalk below -15 dB and power consumption below 19.15 mW across all 16 ports are indicated. The result brings high-speed optical switching to the portfolio of devices at the promising waveband.

physics.optics↗

arXiv2022

Linear Optical Modulators for Prospective Communications at the 2 {\mu}m Waveband

The 2 {\mu}m waveband is an area that could have significant technological consequences, with applications ranging from spectroscopy, LIDAR and free-space communications. The development of the thulium-doped fiber amplifier, hollow-core photonic bandgap fiber and 2 {\mu}m GaSb-based diode lasers has highlighted the ability of the waveband in alleviating the fiber capacity crisis in the incumbent communication infrastructure. The above has initiated vibrant development in the silicon photonic-space at 2 {\mu}m, where the area is capable of enabling highly-integrated photonic circuits, and potentially at low-cost and high-volumes. However, as of now, modulator linearity at 2 {\mu}m has not been addressed. The metric, as characterized by spurious free dynamic range is imperative for numerous applications such as RF photonic links for 5G and digital analog transmission in coherent communications. The development of linear optical modulators will be crucial in bringing these applications to the 2 {\mu}m. In view of that, this work is the first to address modulator linearity at the 2 {\mu}m, where the ring-assisted Mach-Zehnder modulator is developed, indicating spurious free dynamic range as high as 95 dB.Hz^2/3. It is found that that modulator spurious free dynamic range has a strong dependence on modulator bias voltage where it impacts the linearity of the transfer function in which the input RF signal is applied upon. The demonstrated modulator indicates favorable performance within silicon photonic modulators developed at 2 {\mu}m with bandwidth exceeding 17.5 GHz and modulation efficiency ranging from 0.70 to 1.25 V.cm.

physics.app-ph↗