arXiv subjects

Wei Kong

Publications and source records attributed to Wei Kong.

11 recordsLinked to original sources

arXiv2026

Cross-Source Supervision for Bone Infection Segmentation in Dual-Modality PET-CT

Early and accurate diagnosis and lesion localization of bone infections are crucial for clinical treatment. PET-CT integrates anatomical information from CT with metabolic information from PET, making it an important imaging modality for diagnosing bone infections. However, accurate lesion segmentation remains challenging due to indistinct lesion boundaries and inconsistencies in annotations generated by different experts or automated systems. In this work, we investigate multimodal segmentation of bone infections under annotation discrepancy. We develop a bimodal end-to-end segmentation framework that integrates PET metabolic signals and CT bone-window anatomy through an early-fusion multimodal representation.To mitigate performance inflation caused by inter-slice correlation in small datasets, this study discards traditional two-dimensional evaluation methods and implements a rigorous patient-level 3D volumetric evaluation and cross-validation. Furthermore, instead of forcing a singular consensus, we propose a decoupled dual-source learning framework where parallel models are trained on independent expert annotations driven by high-sensitivity and high-specificity clinical intents. Experimental results objectively report performance variations at the patient level (Mean + SD and Mean - SD), demonstrating the effectiveness of multimodal PET-CT fusion. The cross-evaluation matrix quantitatively reveals how models successfully internalize distinct expert diagnostic philosophies, providing a robust, diversity-preserving paradigm for clinical AI deployment in bone infection segmentation.

cs.CV↗

arXiv2026

Strain-released epitaxy of GaN enabled by compliant single-crystalline metal foils

Heteroepitaxy conventionally relies on rigid crystalline substrates, implicitly assuming that lattice and thermal mismatch must be accommodated within the epitaxial layer, leading to residual strain and defects that worsen with increasing substrate size. Here we demonstrate a substrate-mediated strain-partitioning regime in which lattice and thermal mismatch are preferentially partitioned into the substrate rather than stored in the epitaxial layer. We report the epitaxial growth of single-crystalline GaN on mechanically compliant yet crystallographically ordered single-crystalline copper foils. Atomic-resolution microscopy, geometric phase analysis and density functional theory reveal that mismatch-induced stress is primarily screened by elastic deformation of the Cu lattice, accompanied by localized interfacial slip confined to a few atomic layers, leaving the AlN and GaN epilayers nearly strain-free despite large nominal mismatch. Leveraging this strain-released epitaxial platform, we further demonstrate dense GaN micro-light-emitting diode arrays that benefit from efficient vertical electrical conduction and thermal dissipation enabled by the metallic substrate. By establishing compliant single-crystal metal foils as a new substrate class, this work identifies mechanical contrast as an underexplored governing parameter in heteroepitaxial design, with implications extending beyond GaN.

cond-mat.mtrl-sci↗

arXiv2026

Scalable Solar-Blind Imaging Enabled by Single-Crystalline Beta-Ga2O3 Membranes on Silicon Backplanes

Ultrawide-bandgap semiconductors are attractive for solar-blind ultraviolet (UV) detection owing to their intrinsically low noise and high spectral selectivity, yet their deployment in large-area, high-density electronic imaging systems remains limited by a fundamental trade-off between material quality, device speed, and compatibility with high-density planar silicon readout circuits. Here, we report a membrane-enabled integration platform based on transferable single-crystalline beta-Ga2O3 that overcomes these constraints at the system level. By exploiting the weak interplanar bonding of beta-Ga2O3 (100) plane, we obtain wafer-scale freestanding single-crystalline membranes that enable vertically integrated photodiodes with sub-microsecond, non-persistent photoresponse and high UV-visible rejection. Crucially, we introduce a stitching-based membrane assembly strategy that decouples array resolution from the size of the source single-crystalline substrate, allowing high-resolution photodetector arrays to be integrated onto silicon thin-film-transistor backplanes. The modular assembled active-matrix UV imaging arrays exhibit uniform solar-blind response without image lag, in stark contrast to arrays based on amorphous or polycrystalline films. Beyond beta-Ga2O3, this membrane-enabled and stitching-based modular integration strategy provides a general route toward high-speed, high-resolution electronic imaging systems using transferable single-crystalline semiconductors.

cond-mat.mtrl-sci↗

arXiv2025

Ice-assisted soft-landing deposition for van der Waals integration

Van der Waals integration enables the creation of electronic and optoelectronic devices with unprecedented performance and novel functionalities beyond the existing material limitations. However, it is typically realized using a physical pick-up-and-place process to minimize interfacial damages and is hardly integrated into conventional lithography and metallization procedures. Here we demonstrate a simple in situ transfer strategy for van der Waals integration, in which a thin film of amorphous water ice acts as a buffer layer to shield against the bombardment of energetic clusters during metallization. After ice sublimation, the deposited metal film can be gently and in situ placed onto underlying substrates, to form an atomically clean and damage-free metal-semiconductor interface. This strategy allows ultra-clean and non-destructive fabrication of high-quality contacts on monolayer MoS2, which is extremely beneficial to produce a high-performance 2D field-effect transistor with an ultra-high on/off ratio of 1010, mobility of 80 (cm2 V-1s-1), and also with reduced Fermi level pinning effect. We also demonstrate the batch production of CVD-grown MoS2 transistor arrays with uniform electrical characteristics. Such a gentle and ultra-clean fabrication approach has been further extended to materials with high reactivity, such as halide perovskites. Our method can be easily integrated with mature semiconductor manufacturing technology and may become a generic strategy for fabricating van der Waals contacted devices.

cond-mat.mtrl-sci↗

arXiv2025

Ferroelectricity in 6 Angstrom-Thick Two-dimensional Ga$_2$O$_3$

Atomic-scale ferroelectric thin films hold great promise for high-density, low-power applications but face stability and voltage scaling challenges at extreme thinness. Here, we demonstrate ferroelectricity in single-crystalline two-dimensional (2D) Ga$_2$O$_3$, an ultra-wide-bandgap semiconductor, at just 6 angstrom thickness, exhibiting exceptional retention and thermal stability. We show that epitaxial beta-Ga$_2$O$_3$ can be exfoliated down to a half-unit cell thickness via a self-limiting mechanism, enabling a biaxial strain-induced phase transition into a novel ferroelectric layered structure. Strain modulation enables the reduction of polarization switching voltage to 0.8 V, meeting CMOS voltage scaling requirements. Theoretical calculations reveal that switching is driven by covalent bond reconstruction, effectively countering depolarization and enhancing stability. Additionally, we integrate ferroelectric 2D Ga$_2$O$_3$ onto silicon using a low-temperature, back-end-of-line-compatible process. This work advances the exploration of sub-nanometer ferroelectrics, paving the way for high-density, low-power, non-volatile applications seamlessly integrated with advanced silicon technology.

cond-mat.mtrl-sci↗

arXiv2025

Air-stable lithiation engineering of $\mathrm{MoS}_{2}$ for direct-bandgap multilayers

Due to its sizable direct bandgap and strong light-matter interactions, the preparation of monolayer $\mathrm{MoS}_{2}$ has attracted significant attention and intensive research efforts. However, multilayer $\mathrm{MoS}_{2}$ is largely overlooked because of its optically inactive indirect bandgap caused by interlayer coupling. It is highly desirable to modulate and decrease the interlayer coupling so that each layer in multilayer $\mathrm{MoS}_{2}$ can exhibit a monolayer-like direct-gap behavior. Here, we demonstrate the nanoprobe fabrication of $\mathrm{Li}_{x}\mathrm{MoS}_{2}$-based multilayers exhibiting a direct bandgap and strong photoluminescence emission from tightly bound excitons and trions. The fabrication is facilitated by our newly developed Li-ion platform, featuring tip-induced Li intercalation, air stability and rewritability. Raman characterizations reveal that controlled Li intercalation effectively transforms multilayer $\mathrm{MoS}_{2}$ into the stack of multiple monolayers, leading to a 26-fold enhancement of photoluminescence, compared to a monolayer. This intercalation result is different from existing observations of transforming $\mathrm{MoS}_{2}$ multilayers into metallic phases.

cond-mat.mes-hall↗

arXiv2025

Wafer-scale Integration of Single-Crystalline MoS$_2$ for Flexible Electronics Enabled by Oxide Dry-transfer

Atomically thin, single-crystalline transition metal dichalcogenides (TMDCs) grown via chemical vapor deposition (CVD) on sapphire substrates exhibit exceptional mechanical and electrical properties, positioning them as excellent channel materials for flexible electronics. However, conventional wet-transfer processes for integrating these materials onto flexible substrates often introduce surface contamination, significantly degrading device performance. Here, we present a wafer-scale dry-transfer technique using a high-dielectric oxide as the transfer medium, enabling the integration of 4-inch single-crystalline MoS$_2$ onto flexible substrates. This method eliminates contact with polymers or solvents, thus preserving the intrinsic electronic properties of MoS$_2$. As a result, the fabricated flexible field-effect transistor (FET) arrays exhibit remarkable performance, with a mobility of 117 cm$^2$/Vs, a subthreshold swing of 68.8 mV dec$^{-1}$, and an ultra-high current on/off ratio of $10^{12}$-values comparable to those achieved on rigid substrates. Leveraging the outstanding electrical characteristics, we demonstrated MoS$_2$-based flexible inverters operating in the subthreshold regime, achieving both a high gain of 218 and ultra-low power consumption of 1.4 pW/$μ$m. Additionally, we integrated a flexible tactile sensing system driven by active-matrix MoS$_2$ FET arrays onto a robotic gripper, enabling real-time object identification. These findings demonstrate the simultaneous achievement of high electrical performance and flexibility, highlighting the immense potential of single-crystalline TMDC-based flexible electronics for real-world applications.

physics.app-ph↗

arXiv2024

Phase engineering of giant second harmonic generation in Bi$_2$O$_2$Se

Two-dimensional (2D) materials with remarkable second-harmonic generation (SHG) hold promise for future on-chip nonlinear optics. Relevant materials with both giant SHG response and environmental stability are long-sought targets. Here, we demonstrate the enormous SHG from the phase engineering of a high-performance semiconductor, Bi$_2$O$_2$Se (BOS), under uniaxial strain. SHG signals captured in strained 20 nm-BOS films exceed those of NbOI$_2$ and NbOCl$_2$ of similar thickness by a factor of 10, and are four orders of magnitude higher than monolayer-MoS$_2$, resulting in a significant second-order nonlinear susceptibility on the order of 1 nm V$^{-1}$. Intriguingly, the strain enables continuous adjustment of the ferroelectric phase transition across room temperature. Consequently, an exceptionally large tunability of SHG, approximately six orders of magnitude, is achieved through strain or thermal modulation. This colossal SHG, originating from the geometric phase of Bloch wave functions and coupled with sensitive tunability through multiple approaches in this air-stable 2D semiconductor, opens new possibilities for designing chip-scale, switchable nonlinear optical devices.

cond-mat.mtrl-sci↗

arXiv2022

Impact of impurities on drift wave instabilities in reversed-field pinch plasmas

The drift wave in the presence of impurity ions was investigated numerically in reversed field pinch (RFP) plasmas, using the gyrokinetic integral eigenmode equation. It was found that in RFP plasmas with hollow density profiles, an increase in $k_θρ_s$ increases the growth rate of the ion temperature gradient (ITG). Comparing the results of regular and hollow plasma density profile shows that the ITG mode under the hollow density profile is much harder to be excited. For the impurities' effects, when the impurities' density gradient is opposite to the primary ions, namely when $L_{ez}$ is negative, impurities could enhance the instability. On the contrary, when $L_{ez}$ is positive, the instability is stabilized. Regarding the trapped electron mode (TEMs), the growth rate under the plasma with hollow density profile remained minor than that for the standard density gradient. There exists a threshold of $L_{ez}$. When $L_{ez}$ is less than this value, impurity destabilizes TEMs, while as $L_{ez}$ is greater than this, impurity stabilizes TEMs. The effects of $L_{ez}$ on TEM also depend on both the plasma density gradient and the impurity species. In addition, the influence of collisionality on TEMs was also studied.

physics.plasm-ph↗

arXiv2022

Multiplication of freestanding semiconductor membranes from a single wafer by advanced remote epitaxy

Freestanding single-crystalline membranes are an important building block for functional electronics. Especially, compounds semiconductor membranes such as III-N and III-V offer great opportunities for optoelectronics, high-power electronics, and high-speed computing. Despite huge efforts to produce such membranes by detaching epitaxial layers from donor wafers, however, it is still challenging to harvest epitaxial layers using practical processes. Here, we demonstrate a method to grow and harvest multiple epitaxial membranes with extremely high throughput at the wafer scale. For this, 2D materials are directly formed on III-N and III-V substrates in epitaxy systems, which enables an advanced remote epitaxy scheme comprised of multiple alternating layers of 2D materials and epitaxial layers that can be formed by a single epitaxy run. Each epilayer in the multi-stack structure is then harvested by layer-by-layer peeling, producing multiple freestanding membranes with unprecedented throughput from a single wafer. Because 2D materials allow peeling at the interface without damaging the epilayer or the substrate, wafers can be reused for subsequent membrane production. Therefore, this work represents a meaningful step toward high-throughput and low-cost production of single-crystal membranes that can be heterointegrated.

physics.app-ph↗

arXiv2020

A Survey of State-of-the-Art on Blockchains: Theories, Modelings, and Tools

To draw a roadmap of current research activities of the blockchain community, we first conduct a brief overview of state-of-the-art blockchain surveys published in the recent 5 years. We found that those surveys are basically studying the blockchain-based applications, such as blockchain-assisted Internet of Things (IoT), business applications, security-enabled solutions, and many other applications in diverse fields. However, we think that a comprehensive survey towards the essentials of blockchains by exploiting the state-of-the-art theoretical modelings, analytic models, and useful experiment tools is still missing. To fill this gap, we perform a thorough survey by identifying and classifying the most recent high-quality research outputs that are closely related to the theoretical findings and essential mechanisms of blockchain systems and networks. Several promising open issues are also summarized finally for future research directions. We wish this survey can serve as a useful guideline for researchers, engineers, and educators about the cutting-edge development of blockchains in the perspectives of theories, modelings, and tools.

cs.DC↗