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Wei Yi

Publications and source records attributed to Wei Yi.

At least 217 records · Page 12Linked to original sources
arXiv2010

Evidence for Competition between Superconductivity and Kondo Effect in CeFeAsO0.7F0.3 under High Pressure

We discover a pressure induced quantum phase transition from the superconducting state to the non-superconducting Kondo screened phase associated with a 2% volume collapse in CeFeAsO0.7F0.3 through measurements of high-pressure resistance, synchrotron x-ray diffraction, and x-ray absorption spectroscopy (XAS) in a diamond anvil cell. Our XAS data of Ce-L3 in CeFeAsO0.7F0.3 clearly show a spectral weight transfer from the main line to the satellite line after the transition, demonstrating the formation of the Kondo singlets under pressure in CeFeAsO1-xFx. Our results have revealed a physical picture of a pressure-induce competition between Kondo singlets and BCS singlets in the Ce-pnictide superconductors.

cond-mat.supr-con↗
arXiv2009

Pressure-induced lattice collapse in tetragonal phase and structural phase transition in single crystalline Fe1.05Te

We report studies of in-situ x-ray diffraction (XRD) and electronic properties on the single crystalline of Fe1.05Te compound under high pressure. The results demonstrated that the sample undergoes a pressure-induced lattice collapse in tetragonal phase (cT) at 4 GPa at room temperature. The cT phase in turn transfers to monoclinic (M) phase with increasing pressure to 14 GPa. The resistance measurements under pressures show that the onset temperature of structural phase transition (TSTR) decreases upon transformation from the tetragonal (T) to the cT phase and turns up at the 4 GPa where is the boundary pressure of T-cT phase. The onset of antiferromagnetic transition (TAF) shows little change up to 0.8 GPa by magnetization measurements. In the domain of M phase, the sample behaves like semiconductor at low temperature. No superconductivity is observed under the pressure investigated.

cond-mat.supr-con↗
arXiv2009

Bandgap and Band Offsets Determination of Semiconductor Heterostructures using Three-terminal Ballistic Carrier Spectroscopy

Utilizing three-terminal tunnel emission of ballistic electrons and holes, we have developed a method to self-consistently measure the bandgap of semiconductors and band discontinuities at semiconductor heterojunctions without any prerequisite material parameter. Measurements are performed on lattice-matched GaAs/AlxGa1-xAs and GaAs/(AlxGa1-x)0.51In0.49P single-barrier heterostructures. The bandgaps of AlGaAs and AlGaInP are measured with a resolution of several meV at 4.2 K. For the GaAs/AlGaAs interface, the measured Gamma band offset ratio is 60.4:39.6 (+/-2%). For the GaAs/AlGaInP interface, this ratio varies with the Al mole fraction and is distributed more in the valence band. A non-monotonic Al composition dependence of the conduction band offset at the GaAs/AlGaInP interface is observed in the indirect-gap regime.

cond-mat.mes-hall↗
arXiv2009

Pressure-induced Superconductivity in Crystalline Boron Nanowires

We report high-pressure induced superconductivity in boron nanowires (BNWs) with rhombohedral crystal structure. Obviously different from bulk rhombohedral boron, these BNWs show a semiconductor-metal transition at much lower pressure than bulk boron. Also, we found these BNWs become superconductors with Tc=1.5 K at 84 GPa, at the pressure of which bulk boron is still a semiconductor, via in-situ resistance measurements in a diamond anvil cell. With increasing pressure, Tc of the BNWs increases. The occurrence of superconductivity in the BNWs at a pressure as low as 84 GPa probably arises from the size effect.

cond-mat.supr-con↗
arXiv2008

High pressure study on LaFeAsO with different Tc

We report studies on pressure dependence of superconducting transition temperature (Tc) of LaFeAsO, LaFeAs(O0.5F0.5) and LaFeAs(O0.89F0.11) samples. In-situ resistance measurements under high pressure showed that the Tc of these three compounds increases with pressure initially, reaches a maximum value and then decreases with further increasing pressure, although the Tc at ambient pressure are different. The onset Tc of LaFeAsO is ~50 K at 1.5 GPa, which is the highest record in La-based oxypnicited system. The significant change in Tc induced by pressure is attributed to the orbital degeneracy and the electron density of state at the Fermi level.

cond-mat.supr-con↗
arXiv2008

Unconventional superconductivity of NdFeAsO0.82F0.18 indicated by the low temperature dependence of the lower critical field Hc1

We measured the initial M-H curves for a sample of the newly discovered superconductor NdFeAsO0.82Fe0.18, which had a critical temperature, Tc, of 51 K, and was fabricated at the high pressure of 6 GPa. The lower critical field, Hc1, was extracted from the deviation point of the Meissner linearity in the M-H curves, which show linear temperature dependence in the low temperature region down to 5 K. The Hc1(T) indicates no s-wave superconductivity, but rather an unconventional superconductivity with a nodal gap structure. Furthermore, the linearity of Hc1 at low temperature does not hold at high temperature, but shows other characteristics, indicating that this superconductor might have multi-gap features. Based on the low temperature nodal gap structure, we estimate that the maximum gap magnitude delta 0 = (1.6+- 0.2) kBTc.

cond-mat.supr-con↗
arXiv2008

Flux pinning mechanism in NdFeAsO0.82F0.18 superconductor: Thermally activated flux flow and charge carrier mean free path fluctuation pinning

The flux pinning mechanism of NdO0.82F0.18FeAs superconductor made under high pressure, with a critical temperature, Tc, of 51 K, has been investigated in detail in this work. The field dependence of the magnetization and the temperature dependence of the magnetoresistivity were measured in fields up to 13 T. The field dependence of the critical current density, Jc(B), was analyzed within the collective pinning model. A crossover field, Bsb, from the single vortex to the small vortex bundle pinning regime was observed. The temperature dependence of Bsb(T) is in good agreement with the delta-l pinning mechanism, i.e., pinning associated with fluctuations in the charge-carrier mean free path, l. Analysis of resistive transition broadening revealed that thermally activated flux flow is found to be responsible for the resistivity contribution in the vicinity of Tc. The activation energy U0/kB is 2000 K in low fields and scales as B (-1/3) over a wide field range. Our results indicate that the NdO0.82F0.18FeAs has stronger intrinsic pinning than Bi-2212 and also stronger than MgB2 for H > 8 T.

cond-mat.supr-con↗
arXiv2008

Common Features in Electronic Structure of the Fe-Based Layered Superconductors from Photoemission Spectroscopy

High resolution photoemission measurements have been carried out on non-superconducting LaOFeAs parent compound and various superconducting R(O1-xFx)FeAs (R=La, Ce and Pr) compounds. We found that the parent LaOFeAs compound shows a metallic character. Through extensive measurements, we have identified several common features in the electronic structure of these Fe-based compounds: (1). 0.2 eV feature in the valence band; (2). A universal 13~16 meV feature; (3). A clear Fermi cutoff showing zero leading-edge shift in the superconducting state;(4). Lack of superconducting coherence peak(s); (5). Near EF spectral weight suppression with decreasing temperature. These universal features can provide important information about band structure, superconducting gap and pseudogap in these Fe-based materials.

cond-mat.supr-con↗
arXiv2008

Superconducting Gap and Pseudogap in Sm(O$_{1-x}$F$_x$)FeAs Layered Superconductor from Photoemission Spectroscopy

High resolution photoemission measurements have been carried out on non-superconducting SmOFeAs parent compound and superconducting Sm(O$_{1-x}$F$_x$)FeAs (x=0.12, and 0.15) compounds. The momentum-integrated spectra exhibit a clear Fermi cutoff that shows little leading-edge shift in the superconducting state which suggests the Fermi surface sheet(s) around the $Γ$ point may not be gapped in this multiband superconductors. A robust feature at 13 meV is identified in all these samples. Spectral weight suppression near E$_F$ with decreasing temperature is observed in both undoped and doped samples that points to a possible existence of a pseudogap in these Fe-based compounds.

cond-mat.supr-con↗
arXiv2008

Superconductivity at 53.5 K in GdFeAsO1-delta

Here we report the fabrication and superconductivity of the iron-based arsenic-oxide GdFeAsO1-delta compound with oxygen-deficiency, which has an onset resistivity transition temperature at 53.5 K. This material has a same crystal structure as the newly discovered high-Tc ReFeAsO1-delta family (Re = rare earth metal) and a further reduced crystal lattice, while the Tc starts to decrease compared with the SmFeAsO1-delta system.

cond-mat.supr-con↗
arXiv2008

Superconductivity in iron-based F-doped layered quaternary compound Nd[O1-xFx]FeAs

The recently discovered quaternary arsenide oxide superconductor La[O1-xFx]FeAs with the superconducting critical transition temperature (Tc) of 26 K [1], has been quickly expanded to another high-Tc superconducting system beyond copper oxides by the replacement of La with other rare earth elements, such as Sm, Ce, and Pr etc. [2-4], and the Pr[O1-xFx]FeAs has become to be the first non-cuprate superconductor that holding a Tc above 50 K. All these arsenide (including phosphide) superconductors formed in a same tetragonal layered structure with the space group P4/nmm which has an alternant stacked Fe-As layer and RO (R = rare earth metals) layer. Here we report the discovery of another superconductor in this system, the neodymium-arsenide Nd[O1-xFx]FeAs with an resistivity onset Tc of 51.9 K, which is the second non-cuprate compound that superconducts above 50 K.

cond-mat.supr-con↗
arXiv2008

Superconductivity at 55 K in iron-based F-doped layered quaternary compound Sm[O1-xFx]FeAs

Here we report the superconductivity in the iron-based oxyarsenide Sm[O1-xFx]FeAs, with the onset resistivity transition temperature at 55.0 K and Meissner transition at 54.6 K. This compound has the same crystal structure as LaOFeAs with shrunk crystal lattices, and becomes the superconductor with the highest critical temperature among all materials besides copper oxides.

cond-mat.supr-con↗
arXiv2008

Superconductivity and Phase Diagram in the Iron-based Arsenic-oxides ReFeAsO1-delta (Re = rare earth metal) without F-Doping

Here we report a new class of superconductors prepared by high pressure synthesis in the quaternary family ReFeAsO1-delta (Re = Sm, Nd, Pr, Ce, La) without fluorine doping. The onset superconducting critical temperature (Tc) in these compounds increases with the reduction of Re atom size, and the highest Tc obtained so far is 55 K in SmFeAsO1-delta. For the NdFeAsO1-delta system with different oxygen concentration a dome-shaped phase diagram was found.

cond-mat.supr-con↗
arXiv2008

Superconductivity at 41.0 K in the F-doped LaFeAsO1-xFx

Here we report the superconductivity in the LaFeAsO1-xFx system prepared by high pressure synthesis. The highest onset superconducting transition temperature (Tc) in this La-based system is 41.0 K with the nominal composition of LaFeAsO1-xFx (x = 0.6), which is higher than that reported previously by ambient pressure synthesis. The increase of Tc can be attributed to the further shrinkage of crystal lattice that causes the stronger chemical pressure on the Fe-As plane, which is induced by the increased F-doping level under high pressure synthesis.

cond-mat.supr-con↗
arXiv2008

Superconductivity at 52 K in iron-based F-doped layered quaternary compound Pr[O1-xFx]FeAs

Since the discovery of copper oxide superconductor in 1986 [1], extensive efforts have been devoted to the search of new high-Tc superconducting materials, especially high-Tc systems other than cuprates. The recently discovered quaternary superconductor La[O1-xFx]FeAs with the superconducting critical transition Tc of 26 K [2], which has a much simple layered structure compared with cuprates, has attracted quick enthusiasm and is going to become a new high-Tc system [3-6]. Here we report the discovery of bulk superconductivity in the praseodymium-arsenide oxides Pr[O1-xFx]FeAs with an onset drop of resistivity as high as 52 K, and the unambiguous zero-resistivity and Meissner transition at low temperature, which will place these quaternary compounds to another high-Tc superconducting system explicitly.

cond-mat.supr-con↗
arXiv2007

A two-colour heterojunction unipolar nanowire light-emitting diode by tunnel injection

We present a systematic study of the current-voltage characteristics and electroluminescence of gallium nitride (GaN) nanowire on silicon (Si) substrate heterostructures where both semiconductors are n-type. A novel feature of this device is that by reversing the polarity of the applied voltage the luminescence can be selectively obtained from either the nanowire or the substrate. For one polarity of the applied voltage, ultraviolet (and visible) light is generated in the GaN nanowire, while for the opposite polarity infrared light is emitted from the Si substrate. We propose a model, which explains the key features of the data, based on electron tunnelling from the valence band of one semiconductor into the conduction band of the other semiconductor. For example, for one polarity of the applied voltage, given a sufficient potential energy difference between the two semiconductors, electrons can tunnel from the valence band of GaN into the Si conduction band. This process results in the creation of holes in GaN, which can recombine with conduction band electrons generating GaN band-to-band luminescence. A similar process applies under the opposite polarity for Si light emission. This device structure affords an additional experimental handle to the study of electroluminescence in single nanowires and, furthermore, could be used as a novel approach to two-colour light-emitting devices.

cond-mat.other↗
arXiv2007

Electroluminescence from single nanowires by tunnel injection: an experimental study

We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel-injection of holes from the p-type substrate (under forward bias) and from the metal (under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the standard p-n junction model is generally not applicable to this kind of device structure.

cond-mat.other↗