arXiv subjects

Weida Wu

Publications and source records attributed to Weida Wu.

At least 37 records · Page 2Linked to original sources

arXiv2020

Native Defects in Antiferromagnetic Topological Insulator MnBi$_2$Te$_4$

Using scanning tunneling microscopy and spectroscopy, we visualized the native defects in antiferromagnetic topological insulator $\mathrm{MnBi_2Te_4}$. Two native defects $\mathrm{Mn_{Bi}}$ and $\mathrm{Bi_{Te}}$ antisites can be well resolved in the topographic images. $\mathrm{Mn_{Bi}}$ tend to suppress the density of states at conduction band edge. Spectroscopy imaging reveals a localized peak-like local density of state at $\sim80$~meV below the Fermi energy. A careful inspection of topographic and spectroscopic images, combined with density functional theory calculation, suggests this results from $\mathrm{Bi_{Mn}}$ antisites at Mn sites. The random distribution of $\mathrm{Mn_{Bi}}$ and $\mathrm{Bi_{Mn}}$ antisites results in spatial fluctuation of local density of states near the Fermi level in $\mathrm{MnBi_2Te_4}$.

cond-mat.mtrl-sci↗

arXiv2020

Robust A-type order and spin-flop transition on the surface of the antiferromagnetic topological insulator MnBi$_2$Te$_4$

Here we present microscopic evidence of the persistence of uniaxial A-type antiferromagnetic order to the surface layers of MnBi$_2$Te$_4$ single crystals using magnetic force microscopy. Our results reveal termination-dependent magnetic contrast across both surface step edges and domain walls, which can be screened by thin layers of soft magnetism. The robust surface A-type order is further corroborated by the observation of termination-dependent surface spin-flop transitions, which have been theoretically proposed decades ago. Our results not only provide key ingredients for understanding the electronic properties of the antiferromagnetic topological insulator MnBi$_2$Te$_4$, but also open a new paradigm for exploring intrinsic surface metamagnetic transitions in natural antiferromagnets.

cond-mat.mtrl-sci↗

arXiv2020

Two-channel anomalous Hall effect in SrRuO3

The Hall effect in SrRuO$_3$ thin-films near the thickness limit for ferromagnetism shows an extra peak in addition to the ordinary and anomalous Hall effects. This extra peak has been attributed to a topological Hall effect due to two-dimensional skyrmions in the film around the coercive field; however, the sign of the anomalous Hall effect in SrRuO$_3$ can change as a function of saturation magnetization. Here we report Hall peaks in SrRuO$_3$ in which volumetric magnetometry measurements and magnetic force microscopy indicate that the peaks result from the superposition of two anomalous Hall channels with opposite sign. These channels likely form due to thickness variations in SrRuO$_3$, creating two spatially separated magnetic regions with different saturation magnetizations and coercive fields. The results are central to the development of strongly correlated materials for spintronics.

cond-mat.str-el↗

arXiv2019

Spectromicroscopic measurement of surface and bulk band structure interplay in a disordered topological insulator

Topological insulators are bulk semiconductors that manifest in-gap massless Dirac surface states due to the topological bulk-boundary correspondence principle [1-3]. These surface states have been a subject of tremendous ongoing interest, due both to their intrinsic properties and to higher order emergence phenomena that can be achieved by manipulating the interface environment [4-11]. Here, angle resolved photoemission (ARPES) spectromicroscopy and supplementary scanning tunneling microscopy (STM) are performed on the model topological insulator Bi2Se3 to investigate the interplay of crystallographic inhomogeneity with the topologically ordered bulk and surface band structure. Quantitative analysis methods are developed to obtain key spectroscopic information in spite of a limited dwell time on each measured point. Band energies are found to vary on the scale of 50 meV across the sample surface, enabling single-sample measurements that are analogous to a multi-sample doping series (termed a "binning series"). Focusing separately on the surface and bulk electrons reveals a nontrivial hybridization-like interplay between fluctuations in the surface and bulk state energetics.

cond-mat.mtrl-sci↗

arXiv2019

Magnetic imaging of antiferromagnetic domain walls

The control of domain walls or spin textures is crucial for spintronic applications of antiferromagnets. Despite many efforts, it has been challenging to directly visualize antiferromagnetic domains or domain walls with nanoscale resolution, especially in magnetic field. Here, we report magnetic imaging of domain walls in several uniaxial antiferromagnets, the topological insulator MnBi$_2$Te$_4$ family and the Dirac semimetal EuMnBi$_2$, using cryogenic magnetic force microscopy (MFM). Our MFM results reveal higher magnetic susceptibility or net moments inside the domain walls than in domains. Domain walls in these antiferromagnets form randomly with strong thermal and magnetic field dependences. The direct visualization of domain walls and domain structure in magnetic field will not only facilitate the exploration of intrinsic phenomena in topological antiferromagnets, but also open a new path toward control and manipulation of domain walls or spin textures in functional antiferromagnets.

cond-mat.mtrl-sci↗

arXiv2019

Giant topological Hall effect in correlated oxide thin films

Strong electronic correlations can produce remarkable phenomena such as metal-insulator transitions and greatly enhance superconductivity, thermoelectricity, or optical non-linearity. In correlated systems, spatially varying charge textures also amplify magnetoelectric effects or electroresistance in mesostructures. However, how spatially varying spin textures may influence electron transport in the presence of correlations remains unclear. Here we demonstrate a very large topological Hall effect (THE) in thin films of a lightly electron-doped charge-transfer insulator, (Ca, Ce)MnO3. Magnetic force microscopy reveals the presence of magnetic bubbles, whose density vs. magnetic field peaks near the THE maximum, as is expected to occur in skyrmion systems. The THE critically depends on carrier concentration and diverges at low doping, near the metal-insulator transition. We discuss the strong amplification of the THE by correlation effects and give perspectives for its non-volatile control by electric fields.

cond-mat.mtrl-sci↗

arXiv2019

Pb-doped p-type Bi$_2$Se$_3$ thin films via interfacial engineering

Due to high density of native defects, the prototypical topological insulator (TI), Bi$_2$Se$_3$, is naturally n-type. Although Bi$_2$Se$_3$ can be converted into p-type by substituting 2+ ions for Bi, only light elements such as Ca have been so far effective as the compensation dopant. Considering that strong spin-orbit coupling (SOC) is essential for the topological surface states, a light element is undesirable as a dopant, because it weakens the strength of SOC. In this sense, Pb, which is the heaviest 2+ ion, located right next to Bi in the periodic table, is the most ideal p-type dopant for Bi$_2$Se$_3$. However, Pb-doping has so far failed to achieve p-type Bi$_2$Se$_3$ not only in thin films but also in bulk crystals. Here, by utilizing an interface engineering scheme, we have achieved the first Pb-doped p-type Bi$_2$Se$_3$ thin films. Furthermore, at heavy Pb-doping, the mobility turns out to be substantially higher than that of Ca-doped samples, indicating that Pb is a less disruptive dopant than Ca. With this SOC-preserving counter-doping scheme, it is now possible to fabricate Bi$_2$Se$_3$ samples with tunable Fermi levels without compromising their topological properties.

cond-mat.mtrl-sci↗

arXiv2019

Spin chirality fluctuation in two-dimensional ferromagnets with perpendicular anisotropy

Non-coplanar spin textures with scalar spin chirality can generate effective magnetic field that deflects the motion of charge carriers, resulting in topological Hall effect (THE), a powerful probe of the ground state and low-energy excitations of correlated systems. However, spin chirality fluctuation in two-dimensional ferromagnets with perpendicular anisotropy has not been considered in prior studies. Herein, we report direct evidence of universal spin chirality fluctuation by probing the THE above the transition temperatures in two different ferromagnetic ultra-thin films, SrRuO$_3$ and V doped Sb$_2$Te$_3$. The temperature, magnetic field, thickness, and carrier type dependences of the THE signal, along with our Monte-Carlo simulations, unambiguously demonstrate that the spin chirality fluctuation is a universal phenomenon in two-dimensional Ising ferromagnets. Our discovery opens a new paradigm of exploring the spin chirality with topological Hall transport in two-dimensional magnets and beyond

cond-mat.mtrl-sci↗

arXiv2019

Intrinsic superstructure near atomically clean armchair-type step edge of graphite

We investigated the electronic superstructure of graphite surface in the vicinity to monoatomic armchair step edges with scanning tunneling microscopy and spectroscopy. Only the ($\sqrt{3}\times\sqrt{3}$)$\textit{R}$30$^{\circ}$ superstructure is visualized near atomically clean armchair edges, while the honeycomb superstructure is absent. The spectroscopic mapping near the clean armchair edge clearly reveals the ($\sqrt{3}\times\sqrt{3}$)$\textit{R}$30$^{\circ}$ superstructure on both sides of the step edge. We have also visualized a mixture of ($\sqrt{3}\times\sqrt{3}$)$\textit{R}$30$^{\circ}$ and honeycomb superstructures near structurally defective armchair edges. Our results suggest that the honeycomb superstructure pattern results from superposition of two sets of ($\sqrt{3}\times\sqrt{3}$)$\textit{R}$30$^{\circ}$ superstructure with different phases. Our observation solves the mystery of the coexistence of two types of superstructures reported by prior studies.

cond-mat.str-el↗

arXiv2018

Trimer Bonding States on the Surface of Transition-metal Dichalcogenide TaTe2

We report a comprehensive study on the surface structural and electronic properties of TaTe2 at room temperature. The surface structure was investigated using both low energy electron diffraction intensity versus voltage and density functional theory calculations. The relaxed structures obtained from the two methods are in good agreement, which is very similar to the bulk, maintaining double zigzag trimer chains. The calculated density of states indicates that such structure originates from the trimer bonding states of the Ta dxz and dxy orbitals. This work will further provide new insights towards the understanding of the charge density wave phase transition in TaTe2 at low temperature.

cond-mat.mtrl-sci↗

arXiv2018

Electronic Fingerprints of Cr and V Dopants in Topological Insulator Sb2Te3

By combining scanning tunneling microscopy/spectroscopy and first-principles calculations, we systematically study the local electronic states of magnetic dopants V and Cr in the topological insulator (TI) Sb2Te3. Spectroscopic imaging shows diverse local defect states between Cr and V, which agree with our first-principle calculations. The unique spectroscopic features of V and Cr dopants provide electronic fingerprints for the co-doped magnetic TI samples with the enhanced quantum anomalous Hall effect. Our results also facilitate the exploration of the underlying mechanism of the enhanced quantum anomalous Hall temperature in Cr/V co-doped TIs.

cond-mat.str-el↗

arXiv2018

Scanning tunneling spectroscopy investigations of superconducting-doped topological insulators: Experimental pitfalls and results

Recently the doping of topological insulators has attracted significant interest as a potential route towards topological superconductivity. Because many experimental techniques lack sufficient surface sensitivity, however, a definite proof of the coexistence of topological surface states and surface superconductivity is still outstanding. Here we report on highly surface sensitive scanning tunneling microscopy (STM) and spectroscopy (STS) experiments performed on Tl-doped Bi$_2$Te$_3$, a three-dimensional topological insulator which becomes superconducting in the bulk at $T_{\rm C} = 2.3$\,K. Landau level spectroscopy as well as quasiparticle interference mapping clearly demonstrated the presence of a topological surface state with a Dirac point energy $E_{\textrm{D}} = -(118 \pm 1)$\,meV and a Dirac velocity $v_{\textrm{D}} = (4.7 \pm 0.1)\cdot 10^{5}$\,m/s. Tunneling spectra often show a superconducting gap, but temperature- and field-dependent measurements show that both $T_{\rm C}$ and $μ_0 H_{\rm C}$ strongly deviate from the corresponding bulk values. Furthermore, in spite of acritical field value which clearly points to type-II superconductivity, no Abrikosov lattice could be observed. Experiments performed on normal-metallic Ag(111) prove that the gapped spectrum is only caused by superconducting tips, probably caused by a gentle crash with the sample surface during approach. Nearly identical results were found for the intrinsically n-type compound Nb-doped Bi$_2$Se$_3$. Our results suggest that the superconductivity in superconducting-doped V-VI topological insulators does not extend to the surface where the topological surface state is located.

cond-mat.supr-con↗

arXiv2018

Interferometric Imaging of Nonlocal Electromechanical Power Transduction in Ferroelectric Domains

The electrical generation and detection of elastic waves are the foundation for acousto-electronic and acousto-optic systems. For surface-acoustic-wave devices, micro-/nano-electromechanical systems, and phononic crystals, tailoring the spatial variation of material properties such as piezoelectric and elastic tensors may bring significant improvements to the system performance. Due to the much smaller speed of sound than speed of light in solids, it is desirable to study various electroacoustic behaviors at the mesoscopic length scale. In this work, we demonstrate the interferometric imaging of electromechanical power transduction in ferroelectric lithium niobate domain structures by microwave impedance microscopy. In sharp contrast to the traditional standing-wave patterns caused by the superposition of counter-propagating waves, the constructive and destructive fringes in microwave dissipation images exhibit an intriguing one-wavelength periodicity. We show that such unusual interference patterns, which are fundamentally different from the acoustic displacement fields, stem from the nonlocal interaction between electric fields and elastic waves. The results are corroborated by numerical simulations taking into account the sign reversal of piezoelectric tensor in oppositely polarized domains. Our work paves new ways to probe nanoscale electroacoustic phenomena in complex structures by near-field electromagnetic imaging.

cond-mat.mes-hall↗

arXiv2018

Observation of a Topological Insulator Dirac Cone Reshaped by Non-magnetic Impurity Resonance

The massless Dirac electrons found at topological insulator surfaces are thought to be influenced very little by weak, non-magnetic disorder. However, a resonance effect of strongly perturbing non-magnetic impurities has been theoretically predicted to change the dispersion and physical nature of low-energy quasiparticles, resulting in unique particle-like states that lack microscopic translational symmetry. Here we report the direct observation of impurities reshaping the surface Dirac cone of the model 3D topological insulator Bi2Se3. For the first time, a pronounced kink-like dispersion feature is observed in disorder-enriched samples, and found to be closely associated with the anomaly caused by impurity resonance in the surface state density of states, as observed by dichroic angle resolved photoemission spectroscopy (ARPES). The experimental observation of these features, which closely resemble theoretical predictions, has significant implications for the properties of topological Dirac cones in applied scenarios that commonly feature point defect disorder at surfaces or interfaces.

cond-mat.mtrl-sci↗

arXiv2018

Direct evidence of ferromagnetism in a quantum anomalous Hall system

Quantum anomalous Hall (QAH) systems are of great fundamental interest and potential application because of their dissipationless conduction without the need for external magnetic field. The QAH effect has been realized in magnetically doped topological insulator thin films. However, full quantization requires extremely low temperature ($T< 50\,$mK) in the initial works, though it has been significantly improved with modulation doping or co-doping of magnetic elements. Improved ferromagnetism has been shown in these thin films, yet direct evidence of long-range ferromagnetic order is lacking. Herein, we present direct visualization of long-range ferromagnetic order in thin films of Cr and V co-doped (Bi,Sb)$_2$Te$_3$ using low-temperature magnetic force microscopy with $\textit{in-situ}$ transport. The magnetization reversal process reveals typical ferromagnetic domain behavior, i.e., domain nucleation and possibly domain wall propagation, in contrast to much weaker magnetic signals observed in the end members, possibly due to superparamagnetic behavior. The observed long-range ferromagnetic order resolves one of the major challenges in QAH systems, and paves the way to high-temperature dissipationless conduction by exploring magnetic topological insulators.

cond-mat.mtrl-sci↗

arXiv2018

Topological phase transition with nanoscale inhomogeneity in (Bi$_{1-x}$In$_{x}$)$_{2}$Se$_{3}$

Topological insulators are a class of band insulators with non-trivial topology, a result of band inversion due to the strong spin-orbit coupling. The transition between topological and normal insulator can be realized by tuning the spin-orbit coupling strength, and has been observed experimentally. However, the impact of chemical disorders on the topological phase transition was not addressed in previous studies. Herein, we report a systematic scanning tunneling microscopy/spectroscopy and first-principles study of the topological phase transition in single crystals of In doped Bi$_2$Se$_3$. Surprisingly, no band gap closure was observed across the transition. Furthermore, our spectroscopic-imaging results reveal that In defects are extremely effective "suppressors" of the band inversion, which leads to microscopic phase separation of topological-insulator-like and normal-insulator-like nano regions across the "transition". The observed topological electronic inhomogeneity demonstrates the significant impact of chemical disorders in topological materials, shedding new light on the fundamental understanding of topological phase transition.

cond-mat.str-el↗

arXiv2018

Two-Dimensional Itinerant Ising Ferromagnetism in Atomically thin Fe3GeTe2

Recent discoveries of intrinsic two-dimensional (2D) ferromagnetism in insulating/semiconducting van der Waals (vdW) crystals open up new possibilities for studying fundamental 2D magnetism and devices employing localized spins. However, a vdW material that exhibits 2D itinerant magnetism remains elusive. In fact, the synthesis of such single-crystal ferromagnetic metals with strong perpendicular anisotropy at the atomically thin limit has been a long-standing challenge. Here, we demonstrate that monolayer Fe3GeTe2 is a robust 2D itinerant ferromagnet with strong out-of-plane anisotropy. Layer-dependent studies reveal a crossover from 3D to 2D Ising ferromagnetism for thicknesses less than 4 nm (five layers), accompanying a fast drop of the Curie temperature from 207 K down to 130 K in the monolayer. For Fe3GeTe2 flakes thicker than ~15 nm, a peculiar magnetic behavior emerges within an intermediate temperature range, which we show is due to the formation of labyrinthine domain patterns. Our work introduces a novel atomically thin ferromagnetic metal that could be useful for the study of controllable 2D itinerant Ising ferromagnetism and for engineering spintronic vdW heterostructures.

cond-mat.mes-hall↗

arXiv2018

Solution to the hole-doping problem and tunable quantum Hall effect in Bi$_{2}$Se$_{3}$ thin films

Bi$_{2}$Se$_{3}$, one of the most widely studied topological insulators (TIs), is naturally electron-doped due to n-type native defects. However, many years of efforts to achieve p-type Bi$_{2}$Se$_{3}$ thin films have failed so far. Here, we provide a solution to this long-standing problem, showing that the main culprit has been the high density of interfacial defects. By suppressing these defects through an interfacial engineering scheme, we have successfully implemented p-type Bi$_{2}$Se$_{3}$ thin films down to the thinnest topological regime. On this platform, we present the first tunable quantum Hall effect (QHE) study in Bi$_{2}$Se$_{3}$ thin films, and reveal not only significantly asymmetric QHE signatures across the Dirac point but also the presence of competing anomalous states near the zeroth Landau level. The availability of doping tunable Bi$_{2}$Se$_{3}$ thin films will now make it possible to implement various topological quantum devices, previously inaccessible.

cond-mat.mtrl-sci↗