arXiv subjects

Weifeng Zhi

Publications and source records attributed to Weifeng Zhi.

3 recordsLinked to original sources

arXiv2026

Electrically controllable valence-conduction band reversals in helical trilayer graphene

In moiré graphene systems, electronic interactions lift spin and valley degeneracies, leading to symmetry-broken ground states. In helical trilayer graphene (HTG), we uncover a distinct interaction-driven mechanism in which the roles of sublattice-polarized valence and conduction bands are cyclically reversed. Using scanning nano-SQUID magnetometry, we detect a series of sharp magnetic signatures consistent with seesaw-like transitions, where occupied and unoccupied valence and conduction bands interchange repeatedly with doping, accompanied by a novel form of magnetic hysteresis. These transitions occur entirely within metallic regimes and leave only weak fingerprints in transport measurements. Self-consistent Hartree-Fock calculations reveal that interactions reorganize all eight low-energy flat bands, driving abrupt changes in orbital magnetization. Our results establish HTG as the first system where electronic interactions provide doping-controlled access to all three internal degrees of freedom - spin, valley, and sublattice - introducing a new class of correlated phase transitions.

cond-mat.mes-hall↗

arXiv2025

hBN alignment orientation controls moiré strength in rhombohedral graphene

Rhombohedral multilayer graphene hosts a rich landscape of correlated symmetry-broken phases, driven by strong interactions from its flat band edges. Aligning to hexagonal boron nitride (hBN) creates a moiré pattern, leading to recent observations of exotic ground states such as integer and fractional quantum anomalous Hall effects. Here, we show that the moiré effects and resulting correlated phase diagrams are critically influenced by a previously underestimated structural choice: the hBN alignment orientation. This binary parameter distinguishes between configurations where the rhombohedral graphene and hBN lattices are aligned near 0° or 180°, a distinction that arises only because both materials break inversion symmetry. Although the two orientations produce the same moiré wavelength, we find their distinct local stacking configurations result in markedly different moiré potential strengths. Using low-temperature transport and scanning SQUID-on-tip magnetometry, we compare nearly identical devices that differ only in alignment orientation and observe sharply contrasting sequences of symmetry-broken states. Theoretical analysis reveals a simple mechanism based on lattice relaxation and the atomic-scale electronic structure of rhombohedral graphene, supported by detailed modeling. These findings establish hBN alignment orientation as a key control parameter in moiré-engineered graphene systems and provide a framework for interpreting both prior and future experiments.

cond-mat.mes-hall↗

arXiv2023

Imaging de Haas-van Alphen quantum oscillations and milli-Tesla pseudomagnetic fields

A unique attribute of atomically thin quantum materials is the in-situ tunability of their electronic band structure by externally controllable parameters like electrostatic doping, electric field, strain, electron interactions, and displacement or twisting of atomic layers. This unparalleled control of the electronic bands has led to the discovery of a plethora of exotic emergent phenomena. But despite its key role, there is currently no versatile method for mapping the local band structure in advanced 2D materials devices in which the active layer is commonly embedded in various insulating layers and metallic gates. Utilizing a scanning superconducting quantum interference device, we image the de Haas-van Alphen quantum oscillations in a model system, the Bernal-stacked trilayer graphene with dual gates, which displays multiple highly-tunable bands. By resolving thermodynamic quantum oscillations spanning over 100 Landau levels in low magnetic fields, we reconstruct the band structure and its controllable evolution with the displacement field with unprecedented precision and spatial resolution of 150 nm. Moreover, by developing Landau level interferometry, we reveal shear-strain-induced pseudomagnetic fields and map their spatial dependence. In contrast to artificially-induced large strain, which leads to pseudomagnetic fields of hundreds of Tesla, we detect naturally occurring pseudomagnetic fields as low as 1 mT corresponding to graphene twisting by just 1 millidegree over one μm distance, two orders of magnitude lower than the typical angle disorder in high-quality twisted bilayer graphene devices. This ability to resolve the local band structure and strain on the nanoscale opens the door to the characterization and utilization of tunable band engineering in practical van der Waals devices.

cond-mat.mes-hall↗