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Weihanzhang Guo

Publications and source records attributed to Weihanzhang Guo.

2 recordsLinked to original sources

Observation of metastable chiral domain walls in a topological magnet

The interplay between topology and correlation can give rise to exotic collective excitations. The integer and fractional quantum anomalous Hall (QAH) magnets recently discovered in two-dimensional (2D) flatband systems are predicted to host spin excitations distinct from those in conventional magnets. Experimentally, nevertheless, these new excitations remain largely unexplored. Here we investigate spin-valley excitations in a twisted MoTe2 moiré superlattice using resonant ultrafast pump-probe spectroscopy. We observe a metastable spin-valley excitation in the QAH magnet below T ~ 3.7 K that survives reverse magnetic field several times larger than the saturation field. The behavior of this excitation is sharply distinct from ordinary domain walls and magnons, indicating a new type of spin-valley textures unique to topological magnets. We propose that these textures are chiral domain walls with an in-plane winding of the pseudospin order parameter along the domain wall. Their metastability arises from the interplay between the topological winding in real space and the quantum geometry of the parent bands in momentum space through a universal mechanism. These chiral domain walls govern the nonequilibrium dynamics of QAH magnets and may play a central role in their stability. Our study highlights intrinsic quantum geometry effects on spin excitations in topological magnets; and provides key insights into the fundamental mechanism limiting stability of topological protection.

cond-mat.mes-hall↗

Layer-parity-dependent interfacial coupling in Nb$_3$Cl$_8$/graphene van der Waals heterostructures

Strongly correlated two-dimensional systems provide compelling platforms for investigating exotic quantum phenomena. Niobium chloride (Nb$_3$Cl$_8$), a single-band Mott insulator, exhibits a remarkable out-of-plane polarization in its topmost layer that oscillates with layer parity, manifesting as an odd-even effect. Using atomic force microscopy (AFM) and Kelvin probe force microscopy (KPFM), this layer-parity-dependent polarization can be effectively characterized through surface morphology and potential mapping, enabling the unambiguous identification of different surface phases. We then fabricated dual-gate Hall devices by coupling different surface phases of Nb$_3$Cl$_8$ with monolayer graphene to investigate how the topmost-layer out-of-plane polarization influences interfacial coupling and the resulting transport behavior. Our results reveal significant phase-dependent variations in charge transfer, carrier densities, and hybridization gaps (25.2 meV for Phase 1 and 30.0 meV for Phase 2). Density functional theory calculations corroborate these experimental findings, showing that distinct out-of-plane polarizations in the topmost layer lead to different orbital overlaps and interfacial coupling strengths. These findings highlight the critical importance of surface polarization and orbital orientation in engineering the properties of strongly correlated van der Waals heterostructures.

cond-mat.mtrl-sci↗