arXiv subjects

Weijun Luo

Publications and source records attributed to Weijun Luo.

8 recordsLinked to original sources

arXiv2025

Simulation-Free PSRO: Removing Game Simulation from Policy Space Response Oracles

Policy Space Response Oracles (PSRO) combines game-theoretic equilibrium computation with learning and is effective in approximating Nash Equilibrium in zero-sum games. However, the computational cost of PSRO has become a significant limitation to its practical application. Our analysis shows that game simulation is the primary bottleneck in PSRO's runtime. To address this issue, we conclude the concept of Simulation-Free PSRO and summarize existing methods that instantiate this concept. Additionally, we propose a novel Dynamic Window-based Simulation-Free PSRO, which introduces the concept of a strategy window to replace the original strategy set maintained in PSRO. The number of strategies in the strategy window is limited, thereby simplifying opponent strategy selection and improving the robustness of the best response. Moreover, we use Nash Clustering to select the strategy to be eliminated, ensuring that the number of strategies within the strategy window is effectively limited. Our experiments across various environments demonstrate that the Dynamic Window mechanism significantly reduces exploitability compared to existing methods, while also exhibiting excellent compatibility. Our code is available at https://github.com/enochliu98/SF-PSRO.

cs.MA↗

arXiv2023

Recent Advances in Hierarchical Multi-label Text Classification: A Survey

Hierarchical multi-label text classification aims to classify the input text into multiple labels, among which the labels are structured and hierarchical. It is a vital task in many real world applications, e.g. scientific literature archiving. In this paper, we survey the recent progress of hierarchical multi-label text classification, including the open sourced data sets, the main methods, evaluation metrics, learning strategies and the current challenges. A few future research directions are also listed for community to further improve this field.

cs.CL↗

arXiv2023

Imaging Strain-Localized Single-Photon Emitters in Layered GaSe below the Diffraction Limit

Nanoscale strain control of exciton funneling is an increasingly critical tool for the scalable production of single photon emitters (SPEs) in two-dimensional materials. However, conventional far-field optical microscopies remain constrained in spatial resolution by the diffraction limit and thus can only provide a limited description of nanoscale strain localization of SPEs. Here, we quantify the effects of nanoscale heterogeneous strain on the energy and brightness of GaSe SPEs on nanopillars with correlative cathodoluminescence, photoluminescence, and atomic force microscopies supported by density functional theory simulations. We report the strain-localized SPEs have a broad range of emission wavelengths from 620 nm to 900 nm. We reveal substantial strain-controlled SPE wavelength tunability over a ~ 100 nm spectral range and two-orders of magnitude enhancement in the SPE brightness at the pillar center due to Type-I exciton funneling. In addition, we show that radiative biexciton cascade processes contribute to the observed CL photon superbunching. Also, the measured GaSe SPE photophysics after electron beam exposure shows the excellent stability of these SPEs. We anticipate this insight into nanoscale strain control of two-dimensional SPEs will guide the development of truly deterministic quantum photonics.

physics.optics↗

arXiv2022

Deterministic Localization of Strain-induced Single-photon Emitters in Multilayer GaSe

Nanoscale strain has emerged as a powerful tool for controlling single-photon emitters (SPEs) in atomically thin transition metal dichalcogenides (TMDCs)(1, 2). However, quantum emitters in monolayer TMDCs are typically unstable in ambient conditions. Multilayer two-dimensional (2D) TMDCs could be a solution, but they suffer from low quantum efficiency, resulting in low brightness of the SPEs. Here, we report the deterministic spatial localization of strain-induced single-photon emitters in multilayer GaSe by nanopillar arrays. The strain-controlled quantum confinement effect introduces well-isolated sub-bandgap photoluminescence and corresponding suppression of the broad band edge photoluminescence. Clear photon-antibunching behavior is observed from the quantum dot-like GaSe sub-bandgap exciton emission at 3.5 Kelvin. The strain-dependent confinement potential and the brightness are found to be strongly correlated, suggesting a promising route for tuning and controlling SPEs. The comprehensive investigations of strain-engineered GaSe SPEs provide a solid foundation for the development of 2D devices for quantum photonic technologies.

cond-mat.mtrl-sci↗

arXiv2020

Improving Neural Network with Uniform Sparse Connectivity

Neural network forms the foundation of deep learning and numerous AI applications. Classical neural networks are fully connected, expensive to train and prone to overfitting. Sparse networks tend to have convoluted structure search, suboptimal performance and limited usage. We proposed the novel uniform sparse network (USN) with even and sparse connectivity within each layer. USN has one striking property that its performance is independent of the substantial topology variation and enormous model space, thus offers a search-free solution to all above mentioned issues of neural networks. USN consistently and substantially outperforms the state-of-the-art sparse network models in prediction accuracy, speed and robustness. It even achieves higher prediction accuracy than the fully connected network with only 0.55% parameters and 1/4 computing time and resources. Importantly, USN is conceptually simple as a natural generalization of fully connected network with multiple improvements in accuracy, robustness and scalability. USN can replace the latter in a range of applications, data types and deep learning architectures. We have made USN open source at https://github.com/datapplab/sparsenet.

cs.LG↗

arXiv2018

The stability of exfoliated FeSe nanosheets during in-air device fabrication process

We studied the stability and superconductivity of FeSe nanosheets during an in-air device fabrication process. Methods were developed to improve the exfoliation yield and to maintain the superconductivity of FeSe. Raman spectroscopy, atomic force microscopy, optical microscopy and time-of-flight-secondary-ion-mass-spectroscopy measurements show that FeSe nanosheets decayed in air. Precipitation of Se particles and iron oxidation likely occurred during the decay process. Transport measurements revealed that the superconductivity of FeSe disappeared during a conventional electron beam lithography process. Shadow mask evaporation and transfer onto pre-defined electrodes methods were shown to be effective in maintaining the superconductivity after the in-air device fabrication process. These methods developed provide a way of making high quality FeSe nano-devices.

cond-mat.mtrl-sci↗

arXiv2017

Thermal Sublimation: a Scalable and Controllable Thinning Method for the Fabrication of Few-Layer Black Phosphorus

In this work, we reported uniform layer-by-layer sublimation of black phosphorus under heating below 600 K. The uniformity and crystallinity of BP samples after thermal thinning were confirmed by Raman spectra and 2D Raman imaging. A uniform and crystalline bilayer black phosphorus flake with an area of 180 um^2 was prepared with this method. No micron scale defects were observed. The sublimation rate of BP was around 0.18 nm / min at 500 K and 1.5 nm / min at 550 K. Both room and high temperature Raman peak intensity ratio Si/A2g vs. BP thickness relations were established for in-situ thickness determination. The sublimation thinning method was shown to be a controllable and scalable approach to prepare few-layer black phosphorus.

cond-mat.mtrl-sci↗

arXiv2016

Study of Black Phosphorus Using Angle-Resolved Polarized Raman Spectroscopy with 442 nm Excitation

We investigated 10 to 200 nm thick black phosphorus flakes on SiO2/Si and polyimide substrates by Angle-resolved Polarized Raman spectra (ARPRS) using 442 nm excitation wavelength. The results revealed that ARPRS with 442 nm excitation can provide unambiguous, convenient, non-destructive and fast determination of BP's crystallographic orientation. The substrate and thickness dependencies of Raman spectra and Raman tensor elements were studied. These dependencies were shown to be influenced by Raman excitation laser heating effect. By comparing with in-situ Raman measurements at elevated temperatures, we were able to quantify the laser-heating effect, which is significant and hard to avoid for Raman measurements of BP on polyimide substrates due to the poor thermal conductivity of the substrate. Thermal processing by substrate heating was shown to have a significant impact on BP on SiO2/Si substrate, but not for BP on polyimide due to smaller thermal expansion mismatch. Our results give important insights on Raman Spectroscopy characterizations of BP on different substrates.

cond-mat.mtrl-sci↗