arXiv subjects

Weiqiang Xie

Publications and source records attributed to Weiqiang Xie.

At least 19 recordsLinked to original sources

arXiv2026

Photonic-chip-based generation of sub-100-femtosecond optical frequency combs

Sub-100-fs optical pulses and frequency comb sources have been revolutionizing a wide range of applications, from ultrafast optical science to optical frequency standard and measurement. To date, the leading techniques for generating such pulses in practical systems rely on tabletop mode-locked lasers, which inherently suffer from high system complexity, limited long-term reliability, and pronounced environmental sensitivity. Meanwhile, driven by advances in photonic integration, chip-scale approaches have sought to realize miniaturized pulse sources. However, simultaneously achieving sub-100-fs duration, ideal pulse shape, and a broadband flat-topped spectrum remains a significant challenge. Here, we address these challenges by combining two key photonic chip technologies: TFLN EO modulators for picosecond seed pulse generation, and highly nonlinear optical loop mirrors (NOLM) based on AlGaAsOI nanowaveguides for efficient temporal pulse cleaning and spectral broadening. In theoretical simulation and experiment, we show that for an input seed pulse centred at ~1550nm, a single-stage AlGaAs NOLM with a loop length of 1cm can produce flat-topped, nearly tenfold spectral broadening and over tenfold compression of pulse width, and more than 10dB suppression of pulse pedestals. Using initial EO comb pulses with ps-level durations at repetition rates of 10-20GHz, we demonstrate photonic-chip-enabled pulses with an unprecedented duration of 55fs and a flat-topped comb spectrum whose 10dB optical bandwidth exceeds 90nm. Our results highlight the remarkable potential of photonic chip technologies to realize high-repetition-rate, miniaturized sub-100-fs optical pulse generators with the prospect of superior stability and operability. The demonstrated photonic-chip-based sub-100-fs optical frequency comb sources may establish a new paradigm for both scientific research and practical applications.

physics.optics↗

arXiv2025

Three-dimensional hyperspectral imaging with optical microcombs

Optical frequency combs have revolutionised time and frequency metrology [1, 2]. The advent of microresonator-based frequency combs ('microcombs' [3-5]) is set to lead to the miniaturisation of devices that are ideally suited to a wide range of applications, including microwave generation [6, 7], ranging [8-10], the precise calibration of astronomical spectrographs [11], neuromorphic computing [12, 13], high-bandwidth data communications[14], and quantum-optics [15, 16] platforms. Here, we introduce a new microcomb application for three-dimensional imaging. Our method can simultaneously determine the chemical identity and full three-dimensional geometry, including size, shape, depth, and spatial coordinates, of particulate matter ranging from micrometres to millimetres in size across nearly $10^5$ distinct image pixels. We demonstrate our technique using millimetre-sized plastic specimens (i.e. microplastics measuring less than 5 mm). We combine amplitude and phase analysis and achieve a throughput exceeding $1.2~10^6$ pixels per second with micrometre-scale precision. Our method leverages the defining feature of microcombs - their large line spacing - to enable precise spectral diagnostics using microcombs with a repetition frequency of 1 THz. Our results suggest scalable operation over several million pixels and nanometre-scale axial resolution. Coupled with its high-speed, label-free and multiplexed capabilities, our approach provides a promising basis for environmental sensing, particularly for the real-time detection and characterisation of microplastic pollutants in aquatic ecosystems [17].

physics.optics↗

arXiv2022

Soliton generation in AlGaAs microresonators at room temperature

Chip-integrated optical frequency combs are attractive optical sources in comb applications requiring high-repetition-rate, low power consumption, or compact size. Spontaneous soliton formation via Kerr parametric oscillation is a promising generation principle in these frequency combs, and has been demonstrated in several material platforms over the past decade. Of these materials, AlGaAs has one of the largest Kerr nonlinearity coefficients allowing low pump threshold comb generation. However, bright soliton generation using this material has only been possible at cryogenic temperature because of the large thermo-optic effect at room temperature, which hinders stable access to the soliton regime. Here, we report self-stabilized single soliton generation in AlGaAs microresonators at room temperature by utilizing a rising soliton step in large free-spectral-range resonators. With sub-milliWatt optical pump power, 1 THz repetition-rate soliton generation is demonstrated. Perfect soliton crystal formation and soliton breather states are also observed. Besides the advantages of large optical nonlinearity, the devices are natural candidates for integration with III-V pump lasers.

physics.optics↗

arXiv2022

Ultralow voltage, High-speed, and Energy-efficient Cryogenic Electro-Optic Modulator

Photonic integrated circuits (PICs) at cryogenic temperatures enable a wide range of applications in scalable classical and quantum systems for computing and sensing. A promising application of cryogenic PICs is to provide optical interconnects by up-converting signals from electrical to optical domain, allowing massive data-transfer from 4 K superconducting (SC) electronics to room temperature environment. Such a solution is central to overcome the major bottleneck in the scalability of cryogenic systems, which currently rely on bulky copper cables that suffer from limited bandwidth, large heat load, and do not show any scalability path. A key element for realizing a cryogenic-to-room temperature optical interconnect is a high-speed electro-optic (EO) modulator operating at 4 K with operation voltage at mV scale, compatible with SC electronics. Although several cryogenic EO modulators have been demonstrated, their driving voltages are significantly large compared to the mV scale voltage required for SC circuits. Here, we demonstrate a cryogenic modulator with ~10 mV peak-to-peak driving voltage and gigabits/sec data rate, with ultra-low electric and optical energy consumptions of ~10.4 atto-joules/bit and ~213 femto-joules/bit, respectively. We achieve this record performance by designing a compact optical ring resonator modulator in a heterogeneous InP-on-Silicon platform, where we optimize a multi-quantum well layer of InAIGaAs to achieve a strong EO effect at 4 K. Unlike other semiconductors such as silicon, our platform benefits from the high-carrier mobility and minimal free carrier freezing of III-V compounds at low temperatures, with moderate doping level and low loss (intrinsic resonator Q~272,000). These modulators can pave the path for complex cryogenic photonic functionalities and massive data transmission between cryogenic and room-temperature electronics.

physics.optics↗

arXiv2021

Sub-milliwatt, widely-tunable coherent microcomb generation with feedback-free operation

Microcombs are revolutionizing optoelectronics by providing parallelized, mutually coherent wavelength channels for time-frequency metrology and information processing. To implement this essential function in integrated photonic systems, it is desirable to drive microcombs directly with an on-chip laser in a simple and flexible way. However, two major difficulties are preventing this goal: 1) generating mode-locked comb states usually requires a significant amount of pump power and 2) the requirement to align laser and resonator frequency significantly complicates operation and limits the tunability of the comb lines. Here, we address these problems by using microresonators on an AlGaAs on-insulator platform to generate dark-pulse microcombs. This highly nonlinear platform dramatically relaxes fabrication requirements and leads to a record-low pump power of less than 1 mW for coherent comb generation. Dark-pulse microcombs facilitated by thermally-controlled avoided mode-crossings are accessed by direct DFB laser pumping. Without any feedback or control circuitries, the comb shows good coherence and stability. This approach also leads to an unprecedented wide chirping range of all the comb lines. Our work provides a route to realize power-efficient, simple and reconfigurable microcombs that can be seamlessly integrated with a wide range of photonic systems.

physics.optics↗

arXiv2021

Probing material absorption and optical nonlinearity of integrated photonic materials

Optical microresonators with high quality ($Q$) factors are essential to a wide range of integrated photonic devices. Steady efforts have been directed towards increasing microresonator $Q$ factors across a variety of platforms. With success in reducing microfabrication process-related optical loss as a limitation of $Q$, the ultimate attainable $Q$, as determined solely by the constituent microresonator material absorption, has come into focus. Here, we report measurements of the material-limited $Q$ factors in several photonic material platforms. High-$Q$ microresonators are fabricated from thin films of SiO$_2$, Si$_3$N$_4$, Al$_{0.2}$Ga$_{0.8}$As and Ta$_2$O$_5$. By using cavity-enhanced photothermal spectroscopy, the material-limited $Q$ is determined. The method simultaneously measures the Kerr nonlinearity in each material and reveals how material nonlinearity and ultimate $Q$ vary in a complementary fashion across photonic materials. Besides guiding microresonator design and material development in four material platforms, the results help establish performance limits in future photonic integrated systems.

physics.optics↗

arXiv2021

Bridging microcombs and silicon photonic engines for optoelectronics systems

Microcombs have sparked a surge of applications over the last decade, ranging from optical communications to metrology. Despite their diverse deployment, most microcomb-based systems rely on a tremendous amount of bulk equipment to fulfill their desired functions, which is rather complicated, expensive and power-consuming. On the other hand, foundry-based silicon photonics (SiPh) has had remarkable success in providing versatile functionality in a scalable and low-cost manner, but its available chip-based light sources lack the capacity for parallelization, which limits the scope of SiPh applications. Here, we bridge these two technologies by using a power-efficient and operationally-simple AlGaAs on insulator microcomb source to drive CMOS SiPh engines. We present two important chip-scale photonic systems for optical data transmissions and microwave photonics respectively: The first microcomb-based integrated photonic data link is demonstrated, based on a pulse-amplitude 4-level modulation scheme with 2 Tbps aggregate rate, and a highly reconfigurable microwave photonic filter with unprecedented integration level is constructed, using a time stretch scheme. Such synergy of microcomb and SiPh integrated components is an essential step towards the next generation of fully integrated photonic systems.

physics.app-ph↗

arXiv2021

High-performance lasers for fully integrated silicon nitride photonics

Silicon nitride (SiN) waveguides with ultra-low optical loss enable integrated photonic applications including low noise, narrow linewidth lasers, chip-scale nonlinear photonics, and microwave photonics. Lasers are key components to SiN photonic integrated circuits (PICs), but are difficult to fully integrate with low-index SiN waveguides due to their large mismatch with the high-index III-V gain materials. The recent demonstration of multilayer heterogeneous integration provides a practical solution and enabled the first-generation of lasers fully integrated with SiN waveguides. However a laser with high device yield and high output power at telecommunication wavelengths, where photonics applications are clustered, is still missing, hindered by large mode transition loss, nonoptimized cavity design, and a complicated fabrication process. Here, we report high-performance lasers on SiN with tens of milliwatts output through the SiN waveguide and sub-kHz fundamental linewidth, addressing all of the aforementioned issues. We also show Hertz-level linewidth lasers are achievable with the developed integration techniques. These lasers, together with high-$Q$ SiN resonators, mark a milestone towards a fully-integrated low-noise silicon nitride photonics platform. This laser should find potential applications in LIDAR, microwave photonics and coherent optical communications.

physics.optics↗

arXiv2021

Laser soliton microcombs on silicon

Silicon photonics enables wafer-scale integration of optical functionalities on chip. A silicon-based laser frequency combs could significantly expand the applications of silicon photonics, by providing integrated sources of mutually coherent laser lines for terabit-per-second transceivers, parallel coherent LiDAR, or photonics-assisted signal processing. Here, we report on heterogeneously integrated laser soliton microcombs combining both InP/Si semiconductor lasers and ultralow-loss silicon nitride microresonators on monolithic silicon substrate. Thousands of devices are produced from a single wafer using standard CMOS techniques. Using on-chip electrical control of the microcomb-laser relative optical phase, these devices can output single-soliton microcombs with 100 GHz repetition rate. Our approach paves the way for large-volume, low-cost manufacturing of chip-based frequency combs for next-generation high-capacity transceivers, datacenters, space and mobile platforms.

physics.optics↗

arXiv2020

Ultra-bright entangled-photon pair generation from an AlGaAs-on-insulator microring resonator

Entangled-photon pairs are an essential resource for quantum information technologies. Chip-scale sources of entangled pairs have been integrated with various photonic platforms, including silicon, nitrides, indium phosphide, and lithium niobate, but each has fundamental limitations that restrict the photon-pair brightness and quality, including weak optical nonlinearity or high waveguide loss. Here, we demonstrate a novel, ultra-low-loss AlGaAs-on-insulator platform capable of generating time-energy entangled photons in a $Q$ $>1$ million microring resonator with nearly 1,000-fold improvement in brightness compared to existing sources. The waveguide-integrated source exhibits an internal generation rate greater than $20\times 10^9$ pairs sec$^{-1}$ mW$^{-2}$, emits near 1550 nm, produces heralded single photons with $>99\%$ purity, and violates Bell's inequality by more than 40 standard deviations with visibility $>97\%$. Combined with the high optical nonlinearity and optical gain of AlGaAs for active component integration, these are all essential features for a scalable quantum photonic platform.

quant-ph↗

arXiv2020

Efficient resonance management in ultrahigh-Q one-dimensional photonic crystal nanocavities fabricated on 300 mm SOI CMOS platform

Photonic crystal (PhC) nanocavities have demonstrated unique capabilities in terms of light confinement and manipulation. As such, they are becoming attractive for the design of novel resonance-based photonic integrated circuits (PICs). Here two essential challenges arise however - how to realize ultrahigh-Q PhC cavities using standard fabrication processes compatible with large volume fabrication, and how to efficiently integrate them with other standard building blocks, available in exiting PIC platforms. In this work, we demonstrate ultrahigh-Q 1D PhC nanocavities fabricated on a 300 mm SOI wafer by optical lithography, with a record Q factor of up to 0.84 million. Moreover, we show efficient mode management in those oxide embedded cavities by coupling them with an access waveguide and realize two critical components: notch filters and narrow-band reflectors. In particular, they allow both single-wavelength and multi-wavelength operation, at the desired resonant wavelengths, while suppressing all other wavelengths over a broad wavelength range (>100 nm). Compared to traditional cavities, this offers a fantastic strategy for implementing resonances precisely in PIC designs with more freedom in terms of wavelength selectivity and the control of mode number. Given their compatibility with optical lithography and compact footprint, the realized 1D PhC nanocavities will be of profound significance for designing compact and novel resonance-based photonic components on large scale.

physics.optics↗

arXiv2020

Dissipative Kerr Solitons in a III-V Microresonator

We demonstrate stable microresonator Kerr soliton frequency combs in a III-V platform (AlGaAs on SiO$_2$) through quenching of thermorefractive effects by cryogenic cooling to temperatures between 4~K and 20~K. This cooling reduces the resonator's thermorefractive coefficient, whose room-temperature value is an order of magnitude larger than that of other microcomb platforms like Si$_3$N$_4$, SiO$_2$, and AlN, by more than two orders of magnitude, and makes soliton states adiabatically accessible. Realizing such phase-stable soliton operation is critical for applications that fully exploit the ultra-high effective nonlinearity and high optical quality factors exhibited by this platform.

physics.optics↗

arXiv2020

Ultrahigh-Q AlGaAs-on-insulator microresonators for integrated nonlinear photonics

Aluminum gallium arsenide (AlGaAs) and related III-V semiconductors have excellent optoelectronic properties. They also possess strong material nonlinearity as well as high refractive indices. In view of these properties, AlGaAs is a promising candidate for integrated photonics, including both linear and nonlinear devices, passive and active devices, and associated applications. For integrated photonics low propagation loss is essential, particularly in nonlinear applications. However, achieving low-loss and high-confinement AlGaAs photonic integrated circuits poses a challenge. Here we show an effective reduction of surface-roughness-induced scattering loss in fully etched high-confinement AlGaAs-on-insulator nanowaveguides, by using a heterogeneous wafer-bonding approach and optimizing fabrication techniques. We demonstrate ultrahigh-quality AlGaAs microring resonators and realize quality factors up to 3.52E6 and finesses as high as 1.4E4. We also show ultra-efficient frequency comb generations in those resonators and achieve record-low threshold powers on the order of ~20 uW and ~120 uW for the resonators with 1 THz and 90 GHz free-spectral ranges, respectively. Our result paves the way for the implementation of AlGaAs as a novel integrated material platform specifically for nonlinear photonics, and opens a new window for chip-based efficiency-demanding practical applications.

physics.optics↗

arXiv2019

Integrated turnkey soliton microcombs operated at CMOS frequencies

While soliton microcombs offer the potential for integration of powerful frequency metrology and precision spectroscopy systems, their operation requires complex startup and feedback protocols that necessitate difficult-to-integrate optical and electrical components. Moreover, CMOS-rate microcombs, required in nearly all comb systems, have resisted integration because of their power requirements. Here, a regime for turnkey operation of soliton microcombs co-integrated with a pump laser is demonstrated and theoretically explained. Significantly, a new operating point is shown to appear from which solitons are generated through binary turn-on and turn-off of the pump laser, thereby eliminating all photonic/electronic control circuitry. These features are combined with high-Q $Si_3N_4$ resonators to fully integrate into a butterfly package microcombs with CMOS frequencies as low as 15 GHz, offering compelling advantages for high-volume production.

physics.optics↗

arXiv2019

Ultra-efficient frequency comb generation in AlGaAs-on-insulator microresonators

Recent advances in nonlinear optics have revolutionized the area of integrated photonics, providing on-chip solutions to a wide range of new applications. Currently, the state of the art integrated nonlinear photonic devices are mainly based on dielectric material platforms, such as Si3N4 and SiO2. While semiconductor materials hold much higher nonlinear coefficients and convenience in active integration, they suffered in the past from high waveguide losses that prevented the realization of highly efficient nonlinear processes on-chip. Here we challenge this status quo and demonstrate an ultra-low loss AlGaAs-on-insulator (AlGaAsOI) platform with anomalous dispersion and quality (Q) factors beyond 1.5*10^6. Such a high quality factor, combined with the high nonlinear coefficient and the small mode volume, enabled us to demonstrate a record low Kerr frequency comb generation threshold of ~36 uW for a resonator with a 1 THz free spectral range (FSR), ~100 times lower compared to that in previous semiconductor platform. Combs with >250 nm broad span have been generated under a pump power lower than the threshold power of state of the art dielectric micro combs. A soliton-step transition has also been observed for the first time from an AlGaAs resonator. This work is an important step towards ultra-efficient semiconductor-based nonlinear photonics and will lead to fully integrated nonlinear photonic integrated circuits (PICs) in near future.

physics.optics↗

arXiv2019

On-chip polarization rotator for type I second harmonic generation

We demonstrate a polarization rotator integrated at the output of a GaAs waveguide producing type I second harmonic generation (SHG). Form-birefringent phase matching between the pump fundamental transverse electric (TE) mode near 2.0 $μ$m wavelength and the signal fundamental transverse magnetic (TM) mode efficiently generates light at 1.0 $μ$m wavelength. A SiN waveguide layer is integrated with the SHG device to form a multi-functional photonic integrated circuit. The polarization rotator couples light between the two layers and rotates the polarization from TM to TE or from TE to TM. With a TE-polarized 2.0 $μ$m pump, type I SHG is demonstrated with the signal rotated to TE polarization. Passive transmission near 1.0 $μ$m wavelength shows ~80 % polarization rotation across a broad bandwidth of ~100 nm. By rotating the signal polarization to match that of the pump, this SHG device demonstrates a critical component of an integrated self-referenced octave-spanning frequency comb. This device is expected to provide crucial functionality as part of a fully integrated optical frequency synthesizer with resolution of less than one part in 10$^{14}$.

physics.optics↗

arXiv2019

On-Chip Integrated Quantum-Dot Silicon-Nitride Microdisk Lasers

Hybrid SiN-QD microlasers coupled to a passive SiN output waveguide with 7μm diameter and record low threshold density of 27 μJ cm-2 are demonstrated. A new design and unique processing scheme starting from SiN/QD/SiN stacks offer long term stability and facilitate in depth laser characterization. This approach opens up new paths for optical communication, lab-on-a-chip, gas sensing and, potentially, on-chip cavity quantum electrodynamics and quantum optics.

physics.optics↗

arXiv2019

Dense III-V/Si Phase-Shifter Based Optical Phased Array

High-performance integrated optical phased arrays (OPAs) are crucial for building up energy-efficient solid-state beam steering systems on a chip. This work demonstrates a first heterogeneous III-V/Si phase-shifter based OPA that utilizes III-V multiple quantum well (MQW) structures to provide superior performance. Demonstrated phase shifters have Vpi of only 0.45 V and residual amplitude modulation (RAM) of only 0.15 dB at 1550 nm for 2pi phase shift with low power consumption of less than 3 nW, which are, to the best our knowledge, the state-of-the-art performance with a record low operating voltage, low power consumption, and low RAM in on-chip OPAs. Their bandwidth is >1 GHz across 200 nm wavelength range. Wavelength tuning is used to demonstrate two-dimensional beam steering with a field of view of 28x51 degree in the 32-channel OPA with an emitter-array pitch of 2 um. Side-mode suppression ratio of 16 dB is also achieved. The high-performance heterogeneous OPA paves the way for scalable and efficient on-chip beam steerers with large steering range and high beam quality.

physics.app-ph↗